JP2001316895A - 電解メッキ装置及び電解メッキ方法 - Google Patents
電解メッキ装置及び電解メッキ方法Info
- Publication number
- JP2001316895A JP2001316895A JP2000135246A JP2000135246A JP2001316895A JP 2001316895 A JP2001316895 A JP 2001316895A JP 2000135246 A JP2000135246 A JP 2000135246A JP 2000135246 A JP2000135246 A JP 2000135246A JP 2001316895 A JP2001316895 A JP 2001316895A
- Authority
- JP
- Japan
- Prior art keywords
- anode
- plating
- electrolytic plating
- region
- cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009713 electroplating Methods 0.000 title claims abstract description 87
- 238000000034 method Methods 0.000 title claims description 30
- 238000007747 plating Methods 0.000 claims abstract description 95
- 230000008569 process Effects 0.000 claims description 16
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 11
- 229910021645 metal ion Inorganic materials 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 abstract description 28
- 229910001431 copper ion Inorganic materials 0.000 abstract description 28
- 239000007788 liquid Substances 0.000 abstract description 11
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 abstract description 6
- 239000002253 acid Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 40
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 28
- 229910052802 copper Inorganic materials 0.000 description 28
- 239000010949 copper Substances 0.000 description 28
- 230000007246 mechanism Effects 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 6
- 239000002699 waste material Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 238000007789 sealing Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910000365 copper sulfate Inorganic materials 0.000 description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000033116 oxidation-reduction process Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 102100024522 Bladder cancer-associated protein Human genes 0.000 description 1
- 101150110835 Blcap gene Proteins 0.000 description 1
- 101100493740 Oryza sativa subsp. japonica BC10 gene Proteins 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- -1 platinum group metals Chemical class 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
- Manufacturing Of Printed Wiring (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000135246A JP2001316895A (ja) | 2000-05-08 | 2000-05-08 | 電解メッキ装置及び電解メッキ方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000135246A JP2001316895A (ja) | 2000-05-08 | 2000-05-08 | 電解メッキ装置及び電解メッキ方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001316895A true JP2001316895A (ja) | 2001-11-16 |
| JP2001316895A5 JP2001316895A5 (enExample) | 2007-04-26 |
Family
ID=18643360
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000135246A Pending JP2001316895A (ja) | 2000-05-08 | 2000-05-08 | 電解メッキ装置及び電解メッキ方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001316895A (enExample) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100827481B1 (ko) * | 2006-08-24 | 2008-05-06 | 동부일렉트로닉스 주식회사 | 웨이퍼의 도금장치 |
| KR101191543B1 (ko) | 2010-08-09 | 2012-10-15 | 주식회사 케이씨텍 | 기판 도금 장치 |
| KR101217460B1 (ko) * | 2010-11-11 | 2013-01-02 | 주식회사 케이씨텍 | 기판 도금 장치 |
| JP2016117918A (ja) * | 2014-12-18 | 2016-06-30 | 三菱マテリアル株式会社 | 電解めっき方法及び電解めっき装置 |
| CN117721511A (zh) * | 2024-02-07 | 2024-03-19 | 苏州智程半导体科技股份有限公司 | 一种快速补充金属离子的半导体晶圆电化学沉积设备 |
-
2000
- 2000-05-08 JP JP2000135246A patent/JP2001316895A/ja active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100827481B1 (ko) * | 2006-08-24 | 2008-05-06 | 동부일렉트로닉스 주식회사 | 웨이퍼의 도금장치 |
| KR101191543B1 (ko) | 2010-08-09 | 2012-10-15 | 주식회사 케이씨텍 | 기판 도금 장치 |
| KR101217460B1 (ko) * | 2010-11-11 | 2013-01-02 | 주식회사 케이씨텍 | 기판 도금 장치 |
| JP2016117918A (ja) * | 2014-12-18 | 2016-06-30 | 三菱マテリアル株式会社 | 電解めっき方法及び電解めっき装置 |
| CN117721511A (zh) * | 2024-02-07 | 2024-03-19 | 苏州智程半导体科技股份有限公司 | 一种快速补充金属离子的半导体晶圆电化学沉积设备 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070215 |
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| A621 | Written request for application examination |
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| A977 | Report on retrieval |
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