JP2001307899A - プラズマ発生装置 - Google Patents
プラズマ発生装置Info
- Publication number
- JP2001307899A JP2001307899A JP2000116642A JP2000116642A JP2001307899A JP 2001307899 A JP2001307899 A JP 2001307899A JP 2000116642 A JP2000116642 A JP 2000116642A JP 2000116642 A JP2000116642 A JP 2000116642A JP 2001307899 A JP2001307899 A JP 2001307899A
- Authority
- JP
- Japan
- Prior art keywords
- inner conductor
- rectangular waveguide
- conductor
- plasma
- insulator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004020 conductor Substances 0.000 claims abstract description 102
- 239000012212 insulator Substances 0.000 claims abstract description 53
- 238000007789 sealing Methods 0.000 claims abstract description 22
- 239000002826 coolant Substances 0.000 claims description 31
- 238000001816 cooling Methods 0.000 claims description 9
- 230000000149 penetrating effect Effects 0.000 claims 1
- 230000005684 electric field Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000000356 contaminant Substances 0.000 description 5
- 230000006378 damage Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000002923 metal particle Substances 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005338 heat storage Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 102100024522 Bladder cancer-associated protein Human genes 0.000 description 1
- 101150110835 Blcap gene Proteins 0.000 description 1
- 101100493740 Oryza sativa subsp. japonica BC10 gene Proteins 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000013386 optimize process Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
Landscapes
- Plasma Technology (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000116642A JP2001307899A (ja) | 2000-04-18 | 2000-04-18 | プラズマ発生装置 |
| US09/829,191 US6401653B1 (en) | 2000-04-18 | 2001-04-09 | Microwave plasma generator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000116642A JP2001307899A (ja) | 2000-04-18 | 2000-04-18 | プラズマ発生装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001307899A true JP2001307899A (ja) | 2001-11-02 |
| JP2001307899A5 JP2001307899A5 (enExample) | 2007-06-07 |
Family
ID=18628080
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000116642A Pending JP2001307899A (ja) | 2000-04-18 | 2000-04-18 | プラズマ発生装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001307899A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007220639A (ja) * | 2006-02-20 | 2007-08-30 | Univ Nagoya | マイクロ波導入器、プラズマ発生装置及びプラズマ処理装置 |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6232703A (ja) * | 1985-08-06 | 1987-02-12 | Rikagaku Kenkyusho | マイクロ波電力導入装置 |
| JPS6362199A (ja) * | 1986-09-02 | 1988-03-18 | 理化学研究所 | マイクロ波導入装置 |
| JPH0963793A (ja) * | 1995-08-25 | 1997-03-07 | Tokyo Electron Ltd | プラズマ処理装置 |
| JPH09148097A (ja) * | 1995-11-22 | 1997-06-06 | Hitachi Ltd | プラズマ生成装置及びそれを用いた半導体素子の製造方法、半導体素子 |
| JPH09181052A (ja) * | 1995-05-26 | 1997-07-11 | Tokyo Electron Ltd | プラズマ処理装置 |
| JPH10144497A (ja) * | 1996-11-15 | 1998-05-29 | Nichimen Denshi Koken Kk | プラズマ発生装置 |
| JPH10229000A (ja) * | 1997-02-14 | 1998-08-25 | Nissin Electric Co Ltd | プラズマ発生装置およびそれを用いたイオン源 |
| JP2000040475A (ja) * | 1998-07-22 | 2000-02-08 | Nissin Electric Co Ltd | 自己電子放射型ｅｃｒイオンプラズマ源 |
| JP2000064040A (ja) * | 1998-08-17 | 2000-02-29 | Nagasaki Pref Gov | 管内面の表面処理方法及び装置 |
-
2000
- 2000-04-18 JP JP2000116642A patent/JP2001307899A/ja active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6232703A (ja) * | 1985-08-06 | 1987-02-12 | Rikagaku Kenkyusho | マイクロ波電力導入装置 |
| JPS6362199A (ja) * | 1986-09-02 | 1988-03-18 | 理化学研究所 | マイクロ波導入装置 |
| JPH09181052A (ja) * | 1995-05-26 | 1997-07-11 | Tokyo Electron Ltd | プラズマ処理装置 |
| JPH0963793A (ja) * | 1995-08-25 | 1997-03-07 | Tokyo Electron Ltd | プラズマ処理装置 |
| JPH09148097A (ja) * | 1995-11-22 | 1997-06-06 | Hitachi Ltd | プラズマ生成装置及びそれを用いた半導体素子の製造方法、半導体素子 |
| JPH10144497A (ja) * | 1996-11-15 | 1998-05-29 | Nichimen Denshi Koken Kk | プラズマ発生装置 |
| JPH10229000A (ja) * | 1997-02-14 | 1998-08-25 | Nissin Electric Co Ltd | プラズマ発生装置およびそれを用いたイオン源 |
| JP2000040475A (ja) * | 1998-07-22 | 2000-02-08 | Nissin Electric Co Ltd | 自己電子放射型ｅｃｒイオンプラズマ源 |
| JP2000064040A (ja) * | 1998-08-17 | 2000-02-29 | Nagasaki Pref Gov | 管内面の表面処理方法及び装置 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007220639A (ja) * | 2006-02-20 | 2007-08-30 | Univ Nagoya | マイクロ波導入器、プラズマ発生装置及びプラズマ処理装置 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070322 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070322 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090203 |
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| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090406 |
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| A02 | Decision of refusal |
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