JP2001298100A5 - - Google Patents
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- JP2001298100A5 JP2001298100A5 JP2001022703A JP2001022703A JP2001298100A5 JP 2001298100 A5 JP2001298100 A5 JP 2001298100A5 JP 2001022703 A JP2001022703 A JP 2001022703A JP 2001022703 A JP2001022703 A JP 2001022703A JP 2001298100 A5 JP2001298100 A5 JP 2001298100A5
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001022703A JP4666783B2 (ja) | 2000-02-01 | 2001-01-31 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000-23656 | 2000-02-01 | ||
| JP2000023656 | 2000-02-01 | ||
| JP2001022703A JP4666783B2 (ja) | 2000-02-01 | 2001-01-31 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001298100A JP2001298100A (ja) | 2001-10-26 |
| JP2001298100A5 true JP2001298100A5 (ja) | 2008-03-13 |
| JP4666783B2 JP4666783B2 (ja) | 2011-04-06 |
Family
ID=26584612
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001022703A Expired - Fee Related JP4666783B2 (ja) | 2000-02-01 | 2001-01-31 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4666783B2 (ja) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4498685B2 (ja) * | 2002-03-22 | 2010-07-07 | 株式会社半導体エネルギー研究所 | 半導体記憶素子の作製方法 |
| EP1522078B1 (en) * | 2002-07-08 | 2007-08-29 | Nxp B.V. | Erasable and programmable non-volatile cell |
| WO2007138754A1 (ja) * | 2006-05-31 | 2007-12-06 | Sharp Kabushiki Kaisha | 半導体装置、その製造方法、及び、表示装置 |
| US7791172B2 (en) * | 2007-03-19 | 2010-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile semiconductor memory device |
| KR100873705B1 (ko) | 2007-06-22 | 2008-12-12 | 삼성모바일디스플레이주식회사 | 유기전계발광표시장치 및 그의 제조방법 |
| CN101689532B (zh) * | 2007-06-29 | 2013-06-12 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
| JP5297610B2 (ja) * | 2007-08-10 | 2013-09-25 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4592739B2 (ja) * | 2007-11-15 | 2010-12-08 | シャープ株式会社 | 表示装置、携帯機器 |
| WO2011118076A1 (ja) * | 2010-03-23 | 2011-09-29 | シャープ株式会社 | 半導体装置、アクティブマトリクス基板、及び表示装置 |
| KR102021808B1 (ko) * | 2012-12-04 | 2019-09-17 | 삼성전자주식회사 | 3차원 구조의 메모리 셀 어레이를 포함하는 불휘발성 메모리 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2887506B2 (ja) * | 1990-07-13 | 1999-04-26 | カシオ計算機株式会社 | 薄膜トランジスタメモリ |
| US5471422A (en) * | 1994-04-11 | 1995-11-28 | Motorola, Inc. | EEPROM cell with isolation transistor and methods for making and operating the same |
| JPH09135030A (ja) * | 1995-11-08 | 1997-05-20 | Hitachi Ltd | 半導体集積回路装置およびそれを用いたコンピュータシステム、ならびに半導体集積回路装置の製造方法 |
| JP3943245B2 (ja) * | 1997-09-20 | 2007-07-11 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2000252373A (ja) * | 1999-03-04 | 2000-09-14 | Toshiba Corp | 不揮発性半導体メモリ、不揮発性半導体メモリを備えた表示装置及びその製造方法 |
| JP2000294658A (ja) * | 1999-04-02 | 2000-10-20 | Matsushita Electronics Industry Corp | 不揮発性半導体記憶装置及びその駆動方法 |
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2001
- 2001-01-31 JP JP2001022703A patent/JP4666783B2/ja not_active Expired - Fee Related