JP2001284241A - Photoresist coater, developer and stripper and method for processing semiconductor substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve the problem on a photoresist coater and a method for processing a semiconductor substrate employing it that the surface of the semiconductor substrate is exposed by stripping liquid and roughened when photoresist is stripped because the semiconductor substrate is coated directly with photoresist. SOLUTION: A photoresist coater comprising means for supporting substrates rotatably sheet by sheet, a drive means for turning the supporting means, and means for supplying photoresist onto the substrate is further provided with means for supplying ozone water onto the substrate.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photoresist coating apparatus, a developing apparatus, a peeling apparatus, and a semiconductor substrate processing method used in a manufacturing process of a semiconductor device or the like.

[0002]

2. Description of the Related Art In general, in a semiconductor device manufacturing process, a predetermined device pattern is formed on a semiconductor substrate or a glass substrate for LCD using a photolithography technique.

In a device pattern forming process using such a photolithography technique, first, a semiconductor substrate is dried after removing particles and metal contamination adhering to the semiconductor substrate by a brush cleaning device. Thereafter, the semiconductor substrate is subjected to a hydrophobic treatment by an adhesion device, and cooled by a cooling device. Next, the photoresist liquid is discharged from the liquid supply nozzle onto the semiconductor substrate by using a photoresist coating apparatus, and then the semiconductor substrate is rotated at a high speed by a spin chuck to apply the photoresist liquid to the entire surface of the semiconductor substrate. To form a uniform resist film.

[0004] After the photoresist is heated by a heating device and subjected to a baking process, a predetermined device pattern is exposed by an exposure device. Then, after the exposed semiconductor substrate is developed with a developing solution in a photoresist developing device, the developing solution is washed away with a rinse solution, and the developing process is completed. Next, after being heated and baked by a heating device, descum is performed by an O2 asher, and then the photoresist is removed and cleaned with a remover by a photoresist remover to form a device pattern.

The general configuration of such a photoresist coating apparatus, developing apparatus and stripping apparatus will be described below as an example.

FIG. 9 shows a schematic configuration diagram of a photoresist coating apparatus. In FIG. 9, reference numeral 90 denotes a spin chuck for attracting and holding a substrate by a vacuum chuck, 91 a drive motor for rotating the spin chuck 90, 92 a cup for receiving the resist liquid scattered during application of the resist liquid, and 93 a cup for receiving the resist liquid. A drain pipe connected to the bottom of the drain 92 for discharging the drain liquid. Reference numeral 94 denotes a resist liquid supply nozzle, 95 denotes a nozzle standby unit that waits for the resist liquid supply nozzle 94, and 96 denotes a dummy discharge unit that performs dummy discharge of the resist liquid.

Next, the structure of the photoresist developing device will be described with reference to FIG. Numeral 100 denotes a spin chuck for holding the substrate by vacuum chuck, 101 a drive motor for rotating the spin chuck 100, 1
Reference numeral 02 denotes a cup for receiving the developer scattered when the developer is applied, and reference numeral 103 denotes a drain pipe connected to the bottom of the cup 102 for discharging the drain. Reference numeral 104 denotes a developer supply nozzle, 105 denotes a nozzle standby unit that waits for the developer supply nozzle 104, and 106 denotes a dummy discharge unit that performs dummy discharge of the developer. Reference numeral 107 denotes a rinsing liquid supply nozzle, and reference numeral 108 denotes a nozzle standby unit that causes the rinsing liquid supply nozzle 107 to wait.

Next, the structure of the photoresist stripping apparatus will be described with reference to FIG. A is a stripping solution treatment zone, B1 is a drying one zone, C is a rinsing solution treatment zone, B
2 is a drying 2 zone. On the substrate coated with the photoresist, first, the photoresist is removed by a stripping solution shower in a stripping solution treatment zone A, and then the drying 1 zone B
Dry in 1 with an air knife. Next, after being rinsed by a pure water rinse shower in the rinsing liquid treatment zone C, it is dried by an air knife in the drying 2 zone B2.

[0009]

In the above-described photoresist coating apparatus and the method of processing a semiconductor substrate using the same, the photoresist is directly applied onto the semiconductor substrate. There is a problem that the surface of the semiconductor substrate is exposed and stripped by the stripping solution.

In a photoresist developing apparatus and a method of processing a semiconductor substrate using the same, since descum is performed by O2 asher processing or the like after development, the processing is troublesome.

Further, in the photoresist stripping apparatus and the method of processing a semiconductor substrate using the same, there is a problem that the photoresist cannot be sufficiently removed by only the stripping solution treatment, and a residue is observed.

The present invention has been made in view of the above circumstances, and has excellent performance in reducing the damage to a semiconductor substrate and shortening a processing time, a developing device, a peeling device, and a semiconductor substrate. The purpose of the present invention is to provide a processing method.

[0013]

In order to achieve the above object, a photoresist coating apparatus, a developing apparatus, a peeling apparatus, and a method for processing a semiconductor substrate using the same according to the present invention are described below. It is on the street.

According to a first aspect of the present invention, there is provided a photoresist coating apparatus comprising means for supplying ozone water onto a substrate. According to the present invention, by supplying ozone water to the semiconductor substrate, an oxide layer is formed on the surface of the semiconductor substrate, and a photoresist solution is discharged onto the semiconductor substrate, and the semiconductor substrate is rotated at a high speed, so that photolithography is performed. The resist solution is diffused over the entire surface of the semiconductor substrate, and a uniform photoresist layer can be easily formed in the same apparatus.

According to a second aspect of the present invention, there is provided a method of processing a semiconductor substrate, comprising the steps of supplying ozone water to the semiconductor substrate to oxidize the surface of the semiconductor substrate, and forming a photoresist on the surface-oxidized semiconductor substrate. Coating step. According to the present invention, after the surface of the semiconductor substrate is oxidized by supplying ozone water to the semiconductor substrate, a photoresist is applied on the surface-oxidized semiconductor substrate to perform a final photoresist stripping process. At this time, the presence of the surface oxide film can reduce damage to the semiconductor substrate due to the stripping solution.

According to a third aspect of the present invention, there is provided a photoresist developing apparatus comprising means for supplying ozone water onto a substrate. According to the present invention, development of a photoresist and descumming with ozone water can be performed in the same apparatus.

According to a fourth aspect of the present invention, there is provided a method for processing a semiconductor substrate, comprising the steps of: developing a photoresist after exposure; supplying ozone water to the semiconductor substrate on which the developed photoresist has been formed to form a descum; And performing the steps. According to the present invention, by performing descum with ozone water, there is an effect that the development of the photoresist and the descum can be performed in a continuous process.

According to a fifth aspect of the present invention, there is provided a photoresist stripping apparatus, comprising: means for stripping a photoresist formed on a substrate; and means for supplying ozone water to the substrate. Things. According to the present invention, the removal of the photoresist by the stripper and the removal of the resist residue by the stripper treatment can be performed in the same apparatus.

According to a sixth aspect of the present invention, there is provided a method of processing a semiconductor substrate, comprising the steps of: removing a photoresist applied on a semiconductor substrate having a surface oxide layer; and supplying ozone water to the substrate. Removing the resist residue above. According to the present invention, the removal of the photoresist by the stripper and the removal of the resist residue by the stripper treatment can be performed in a continuous process.

According to a seventh aspect of the present invention, there is provided a photoresist stripping apparatus, comprising: means for stripping a photoresist formed on a substrate; and means for supplying dilute hydrofluoric acid onto the substrate. Is what you do. According to the present invention, the removal of the photoresist by the stripper and the removal of the surface oxide layer by the diluted hydrofluoric acid can be performed in the same apparatus.

The method of processing a semiconductor substrate according to claim 8 of the present invention comprises the steps of: stripping a photoresist applied on the semiconductor substrate having a surface oxide layer; and supplying dilute hydrofluoric acid to the substrate. Removing the surface oxide layer. According to the present invention, the removal of the photoresist by the stripper and the removal of the surface oxide layer by the dilute hydrofluoric acid can be performed in a continuous process.

[0022]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A photoresist coating apparatus, a developing apparatus, a peeling apparatus, and a method for processing a semiconductor substrate according to embodiments of the present invention will be described below with reference to the drawings.

(Embodiment 1) FIG. 1 is a schematic configuration diagram of a photoresist coating apparatus according to Embodiment 1 of the present invention. In FIG. 1, reference numeral 10 denotes a spin chuck for sucking and holding a substrate by a vacuum chuck;
A drive motor for rotating the resist, 12 is a cup for receiving the resist liquid scattered at the time of resist liquid application,
Reference numeral 13 denotes a drainage pipe connected to the bottom of the cup 12 for discharging the drainage. Reference numeral 14 denotes a resist liquid supply nozzle, 15 denotes a nozzle standby unit that waits for the resist liquid supply nozzle 14, 16 denotes a dummy discharge unit that performs dummy discharge of the resist liquid, 17 denotes an ozone water supply nozzle, and 18 denotes a ozone water supply nozzle 17. This is a nozzle standby unit to be operated.

The feature of this embodiment is that an ozone water supply nozzle 17 is provided. According to this structure, formation of an oxide layer and formation of a photoresist layer on the surface of a semiconductor substrate can be easily performed in the same apparatus. Can be.

(Embodiment 2) FIG. 2 is a flowchart of a semiconductor substrate processing method according to Embodiment 2 of the present invention. First, using the photoresist coating apparatus according to Embodiment 1 of the present invention, a semiconductor substrate is first rotated at a high speed by a spin chuck, ozone water is supplied onto the semiconductor substrate, and an oxide layer is formed on the surface of the semiconductor substrate. Next, after supplying a predetermined photoresist solution onto the semiconductor substrate having the surface oxide layer, the semiconductor substrate is rotated at a high speed by a spin chuck to diffuse the photoresist solution over the entire surface of the semiconductor substrate, thereby forming a uniform resist film. Form.

The features of this embodiment include a step of oxidizing the surface of the semiconductor substrate by supplying ozone water to the semiconductor substrate, and a step of applying a photoresist on the surface-oxidized semiconductor substrate. According to this processing method, after supplying ozone water to the semiconductor substrate to oxidize the surface of the semiconductor substrate, and applying a photoresist on the surface-oxidized semiconductor substrate, the final photoresist When the stripping treatment is performed, damage to the semiconductor substrate due to the stripping solution can be reduced due to the presence of the surface oxide film.

(Embodiment 3) FIG. 3 is a schematic structural view of a photoresist developing apparatus according to Embodiment 3 of the present invention. In FIG. 3, reference numeral 30 denotes a spin chuck for sucking and holding a substrate by a vacuum chuck;
A drive motor for rotating the resist, 32 is a cup for receiving the resist liquid scattered at the time of applying the resist liquid,
Reference numeral 33 denotes a drainage pipe connected to the bottom of the cup 32 for discharging the drainage. 34 is a developer supply nozzle, 3
5 is a nozzle standby unit for waiting the developer supply nozzle 34,
36 is a dummy discharge section for performing a dummy discharge of the developer,
Is an ozone water supply nozzle, 38 is an ozone water supply nozzle
Reference numeral 39 denotes a nozzle standby unit for standby the rinsing liquid supply nozzle, and reference numeral 40 denotes a nozzle standby unit for standby the rinsing liquid supply nozzle 39. Annealing furnaces are provided in parallel with these photoresist developing units.

The feature of this embodiment is that an ozone water supply nozzle 38 is provided. According to this configuration, development of a photoresist and descum by ozone water can be performed in the same apparatus.

(Embodiment 4) FIG. 4 is a flowchart of a semiconductor substrate processing method according to Embodiment 4 of the present invention. Using the photoresist developing apparatus according to the third embodiment of the present invention, the exposed semiconductor substrate is rotated at a high speed by a spin chuck, a developing solution is supplied onto the semiconductor substrate, and the semiconductor substrate is developed. The developing solution is supplied and washed away, and the developing process is completed. Next, after being subjected to baking by being heated by a heating device in an annealing treatment furnace arranged in parallel with the photoresist developing unit, the semiconductor substrate is again rotated at a high speed by a spin chuck in the photoresist developing unit, Ozone water is supplied onto the semiconductor substrate to perform descum.

The features of the present embodiment include a step of developing a photoresist after exposure and a step of supplying ozone water to a semiconductor substrate on which the developed photoresist has been formed to perform descum. According to the present invention, by performing descum with ozone water, there is an effect that photoresist development and descum can be performed in a continuous process.

(Embodiment 5) FIG. 5 is a schematic configuration diagram of a photoresist stripping apparatus according to Embodiment 5 of the present invention. In FIG. 5, A is a stripping solution treatment zone, B1 is a drying one zone, C is a rinsing solution treatment zone, and B2 is a drying two zone. Drying 1 zone B1 is drying by an air knife, and drying 2 zone B2 is spin drying. Also,
The drying 2 zone B2 is provided with an ozone water supply nozzle.

The feature of this embodiment is that drying 2 zone B2
In this configuration, the development of the photoresist and the descum by the ozone water can be performed in the same apparatus.

(Embodiment 6) FIG. 6 is a flowchart of a method for processing a semiconductor substrate according to Embodiment 6 of the present invention. Using the photoresist stripping apparatus according to Embodiment 5 of the present invention, the photoresist-coated substrate is first removed in a stripping solution treatment zone A by a stripping solution shower, and then in a drying one zone B1. Dry with an air knife. Next, after being rinsed by a pure water rinse shower in a rinse liquid treatment zone C, a drying 2 zone B2
The semiconductor substrate is rotated at a high speed by a spin chuck, and ozone water is supplied onto the semiconductor substrate to remove the resist residue, followed by spin drying.

This embodiment is characterized in that a photoresist applied to a semiconductor substrate having a surface oxide layer is removed, and ozone water is supplied to the substrate to remove a resist residue on the semiconductor substrate. And a process
According to the present invention, the removal of the photoresist by the stripper and the removal of the resist residue by the stripper treatment can be performed in a continuous process.

(Embodiment 7) FIG. 7 is a schematic configuration diagram of a photoresist stripping apparatus according to Embodiment 5 of the present invention. In FIG. 7, A is a stripping solution treatment zone, B1 is a drying one zone, C is a rinsing solution treatment zone, and B2 is a drying two zone. Drying 1 zone B1 is drying by an air knife, and drying 2 zone B2 is spin drying. Also,
The drying 2 zone B2 is provided with a diluted hydrofluoric acid supply nozzle and a pure water rinse liquid supply nozzle.

The feature of this embodiment is that drying 2 zone B2
According to this configuration, the removal of the photoresist with the stripping solution and the removal of the surface oxide layer with the diluted hydrofluoric acid can be performed in the same apparatus.

(Eighth Embodiment) FIG. 8 is a flowchart of a method for processing a semiconductor substrate according to an eighth embodiment of the present invention. Using the photoresist stripping apparatus of the seventh embodiment of the present invention, the photoresist-coated substrate is first removed in a stripping solution treatment zone A by a stripping solution shower, and then in a drying one zone B1. Dry with an air knife.

Next, the semiconductor substrate is washed by a pure water rinsing shower in a rinsing liquid treatment zone C, and then the semiconductor substrate is rotated at a high speed by a spin chuck in a drying two zone B2 to supply dilute hydrofluoric acid onto the semiconductor substrate. After removing the oxide layer, a rinse liquid is subsequently supplied to wash and spin dry.

This embodiment is characterized in that a photoresist applied on a semiconductor substrate having a surface oxide layer is removed, and dilute hydrofluoric acid is supplied to the substrate to remove the semiconductor surface oxide layer. According to the present invention, the removal of the photoresist by the stripping solution and the removal of the surface oxide layer by the dilute hydrofluoric acid can be performed in a continuous process.

[0040]

As described above, according to the present invention, the photoresist coating device, the developing device, and the peeling device are provided with a means for supplying ozone water, thereby reducing damage to the semiconductor substrate and shortening the processing time. It is possible to obtain a photoresist coating apparatus, a developing apparatus and a peeling apparatus, and a method of processing a semiconductor substrate, which can perform excellent processes.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram of a photoresist coating apparatus according to a first embodiment of the present invention.

FIG. 2 is a flowchart of a method for processing a semiconductor substrate according to a second embodiment of the present invention;

FIG. 3 is a schematic configuration diagram of a photoresist developing device according to a third embodiment of the present invention.

FIG. 4 is a flowchart of a method for processing a semiconductor substrate according to a fourth embodiment of the present invention.

FIG. 5 is a schematic configuration diagram of a photoresist stripping apparatus according to a fifth embodiment of the present invention.

FIG. 6 is a flowchart of a method for processing a semiconductor substrate according to a sixth embodiment of the present invention.

FIG. 7 is a schematic configuration diagram of a photoresist stripping apparatus according to a seventh embodiment of the present invention.

FIG. 8 is a flowchart of a method for processing a semiconductor substrate according to the eighth embodiment of the present invention.

FIG. 9 is a schematic configuration diagram of a general photoresist coating apparatus.

FIG. 10 is a schematic configuration diagram of a general photoresist developing device.

FIG. 11 is a schematic configuration diagram of a general photoresist stripping apparatus.

[Explanation of symbols]

 Reference Signs List 10 spin chuck 11 drive motor 12 cup 13 drainage pipe 14 resist liquid supply nozzle 15 resist liquid supply nozzle standby section 16 dummy discharge section 17 ozone water supply nozzle 18 ozone water supply nozzle standby section

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) G03F 7/16 502 G03F 7/30 502 5F046 7/30 502 7/42 7/42 H01L 21/30 563 564C 569C 572B F-term (reference) 2H025 AA00 AB16 EA05 FA14 FA15 FA47 FA48 2H096 AA25 CA01 CA14 CA20 GA02 GA29 LA01 LA03 4D075 AC64 AC79 BB20Z DA08 DC21 4F041 AA06 AB02 BA38 CA02 CA18 CA28 4F042 AA07 LAB 4A0818A1807 LA18

Claims (8)

[Claims] 1. A photoresist coating apparatus comprising: means for rotatably supporting substrates one by one; driving means for rotating said supporting means; and means for supplying photoresist onto said substrate. A photoresist coating device, comprising: means for supplying ozone water thereon. 2. A step of supplying ozone water to a semiconductor substrate to oxidize the surface of the semiconductor substrate using the photoresist coating apparatus according to claim 1, and forming a photoresist on the surface-oxidized semiconductor substrate. Applying a semiconductor substrate. 3. A photoresist developing apparatus comprising: means for rotatably supporting a substrate one by one; driving means for rotating the supporting means; and means for supplying a photoresist developing solution onto the substrate. A photoresist developing apparatus, comprising: means for supplying ozone water onto the substrate. 4. A step of developing the photoresist after exposure using the photoresist developing apparatus according to claim 3.
A method of processing a semiconductor substrate, comprising: supplying ozone water to the semiconductor substrate on which the developed photoresist is formed to perform descum. 5. A photoresist stripping apparatus comprising: means for stripping a photoresist formed on a substrate; and means for supplying ozone water to the substrate. 6. A step of stripping a photoresist applied on a semiconductor substrate having a surface oxide layer using the photoresist stripping apparatus according to claim 5, and supplying the ozone water onto the substrate to form the semiconductor. Removing a resist residue on the substrate. 7. A photoresist stripping apparatus comprising: means for stripping a photoresist formed on a substrate; and means for supplying dilute hydrofluoric acid on the substrate. 8. A step of stripping a photoresist applied on a semiconductor substrate having a surface oxide layer using the photoresist stripping apparatus according to claim 7, and supplying dilute hydrofluoric acid to the substrate to remove the semiconductor. Removing the surface oxide layer of the substrate.