JP2001271200A - Plating apparatus - Google Patents
Plating apparatusInfo
- Publication number
- JP2001271200A JP2001271200A JP2000085536A JP2000085536A JP2001271200A JP 2001271200 A JP2001271200 A JP 2001271200A JP 2000085536 A JP2000085536 A JP 2000085536A JP 2000085536 A JP2000085536 A JP 2000085536A JP 2001271200 A JP2001271200 A JP 2001271200A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- bath
- conductive member
- film
- moving means
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000007747 plating Methods 0.000 title claims abstract description 232
- 239000000203 mixture Substances 0.000 claims abstract description 12
- 238000005406 washing Methods 0.000 claims abstract description 10
- 239000007788 liquid Substances 0.000 claims description 3
- 238000009751 slip forming Methods 0.000 abstract description 10
- 238000005476 soldering Methods 0.000 abstract 1
- 229910000679 solder Inorganic materials 0.000 description 17
- 239000010410 layer Substances 0.000 description 10
- 239000002356 single layer Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 238000003486 chemical etching Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 229910001128 Sn alloy Inorganic materials 0.000 description 4
- 229910020836 Sn-Ag Inorganic materials 0.000 description 4
- 229910020830 Sn-Bi Inorganic materials 0.000 description 4
- 229910020988 Sn—Ag Inorganic materials 0.000 description 4
- 229910018728 Sn—Bi Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 101100165186 Caenorhabditis elegans bath-34 gene Proteins 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 101100493705 Caenorhabditis elegans bath-36 gene Proteins 0.000 description 1
- 101100493706 Caenorhabditis elegans bath-38 gene Proteins 0.000 description 1
- 101100493710 Caenorhabditis elegans bath-40 gene Proteins 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910000978 Pb alloy Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 101150062523 bath-39 gene Proteins 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 235000014593 oils and fats Nutrition 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroplating Methods And Accessories (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明はメッキ装置に関し、
メッキ浴槽を移動自在にして複数の組み合わせの金属材
料のメッキ膜を単層または少なくとも２層以上形成する
メッキ装置に関する。The present invention relates to a plating apparatus,
The present invention relates to a plating apparatus which forms a single layer or at least two or more layers of a plurality of combinations of metal materials by making a plating bath movable.
【０００２】[0002]
【従来の技術】Ｃｕ単体、Ｃｕ合金またはＦｅ―Ｎｉ合
金のような導電部材の表面を、Ｓｎ単体またはＳｎ合金
のメッキ層で被覆したリード材は、Ｃｕ単体またはＣｕ
合金が備えている優れた導電性と機械的強度を有する。
なおかつ、そのリード材は、Ｓｎ単体またはＳｎ合金が
備えている耐食性と良好な半田付け性をも併有する高性
能導体である。そのため、それらは、各種の端子、コネ
クタ、リードのような電気・電子機器分野や電力ケーブ
ルの分野などで多用されている。2. Description of the Related Art A lead material in which the surface of a conductive member such as simple Cu, a Cu alloy or an Fe--Ni alloy is coated with a single Sn or Sn alloy plating layer is a simple Cu or Cu alloy.
It has the excellent conductivity and mechanical strength of the alloy.
In addition, the lead material is a high-performance conductor having both corrosion resistance and good solderability provided by Sn alone or Sn alloy. Therefore, they are frequently used in the field of electric and electronic devices such as various terminals, connectors, and leads, and in the field of power cables.
【０００３】また、半導体チップを回路基板に搭載する
場合には、半導体チップのアウターリード部にＳｎ合金
を用いた溶融メッキや電気メッキを行うことにより、当
該アウターリード部の半田付け性を向上せしめることが
行われている。このようなＳｎ合金の代表例は半田（Ｓ
ｎ―Ｐｂ合金）であり半田付け性、耐食性などが良好な
ために、コネクタやリードフレームなどの電気・電子工
業用部品の工業用メッキとして広く利用されている。When a semiconductor chip is mounted on a circuit board, the outer lead portion of the semiconductor chip is subjected to hot-dip plating or electroplating using an Sn alloy to improve the solderability of the outer lead portion. That is being done. A typical example of such a Sn alloy is solder (S
(n-Pb alloy) and has good solderability, corrosion resistance, etc., and thus is widely used as industrial plating for electrical and electronic parts such as connectors and lead frames.
【０００４】図３は、図２に示した半導体リードフレー
ムのＡ−Ａ断面のリード材の基本構成を示す断面図であ
る。例えば、導電部材２１はＣｕ、Ｃｕを主成分とした
Ｃｕ系合金またはＦｅ―Ｎｉを主成分としたＦｅ―Ｎｉ
系合金で構成されている。そして、それらの導電部材２
１の表面には、異なる金属材料の２層のメッキ膜が施さ
れている。例えば、Ｓｎの第１メッキ膜２２とＳｎ―Ｂ
ｉの第２メッキ膜２３がこの順序で形成されている。こ
こで、第１メッキ膜２２の厚さをｔ1、第２メッキ膜２
３の厚さをｔ2としたとき、ｔ1は約３〜１５μｍ、ｔ2
は約１〜５μｍ、ｔ2／ｔ1は約０．１〜０．５に設定す
ると、コストの面でも、半田付け性、耐熱性の点でも、
また半田の接合強度やアルミ線などとの溶接部の溶接強
度の点でも良好な特性があり、リード材としての性能向
上が得られるので好適であることが知られている。FIG. 3 is a cross-sectional view showing a basic structure of a lead material taken along the line AA of the semiconductor lead frame shown in FIG. For example, the conductive member 21 is made of Cu, a Cu-based alloy containing Cu as a main component, or Fe—Ni containing Fe—Ni as a main component.
It is composed of a system alloy. And those conductive members 2
On one surface, two layers of plating films of different metal materials are applied. For example, the first plating film 22 of Sn and Sn-B
The i second plating film 23 is formed in this order. Here, the thickness of the first plating film 22 is t 1 , and the thickness of the second plating film 2 is
When 3 of a thickness was set to t 2, t 1 is about 3 to 15 [mu] m, t 2
Is set to about 1 to 5 μm, and t 2 / t 1 is set to about 0.1 to 0.5. In terms of cost, solderability and heat resistance,
It is also known that it has good characteristics in terms of solder bonding strength and welding strength of a welded portion with an aluminum wire or the like, and is preferable because it improves performance as a lead material.
【０００５】図４は、自動メッキ装置全体のレイアウト
である。まず、アルカリ電解洗浄浴槽３１において、導
電部材２１の表面における半田メッキ皮膜の密着性や半
田付け性を阻害する油脂等の有機性の汚染物質を除去す
る。次に、水洗用浴槽３２において洗浄された後、化学
エッチング浴槽３３において、化学エッチング処理（基
本的には酸化―還元反応を利用した処理）を行い、粒界
や介在物などの存在により不均一な表面になっている導
電部材２１の表面を均一化する。FIG. 4 shows the layout of the entire automatic plating apparatus. First, in the alkaline electrolytic cleaning bath 31, organic contaminants, such as oils and fats, which inhibit the adhesion and solderability of the solder plating film on the surface of the conductive member 21 are removed. Next, after being washed in the rinsing bath 32, a chemical etching process (basically, a process using an oxidation-reduction reaction) is performed in the chemical etching bath 33, and unevenness is caused by the presence of grain boundaries and inclusions. The surface of the conductive member 21 having a proper surface is made uniform.
【０００６】次に、水洗用浴槽３４において洗浄された
後、酸活性化浴槽３５において、水洗用浴槽３４で付着
した酸化膜を除去する。次に、水洗用浴槽３６において
洗浄された後、半田メッキ装置３７においてメッキが施
される。半田メッキ液は強酸性のため、メッキ後の表面
は酸性になっている。そのような表面では時間の経過と
ともに皮膜が変色し、半田付け性が劣化する。そのため
に、水洗用浴槽３８、中和処理浴槽３９において、メッ
キ表面に残留する酸を中和し、吸着している有機物を除
去する。その後、水洗用浴槽４０、湯洗用浴槽４１で洗
浄され、乾燥装置４２において、メッキされた導電部材
２１を乾燥させる。Next, after being washed in the washing bath 34, the oxide film adhered in the washing bath 34 is removed in the acid activation bath 35. Next, after being washed in the rinsing bath 36, plating is performed in the solder plating device 37. Since the solder plating solution is strongly acidic, the surface after plating is acidic. On such a surface, the film discolors over time, and the solderability deteriorates. For this purpose, in the washing bath 38 and the neutralization bath 39, the acid remaining on the plating surface is neutralized, and the adsorbed organic substances are removed. Thereafter, the conductive member 21 which has been washed in the rinsing bath 40 and the hot tub 41 and dried in the drying device 42 is dried.
【０００７】図５は、図４に示した全体のメッキ装置に
おける化学エッチング浴槽３３のＢ―Ｂ方向における断
面図である。FIG. 5 is a sectional view of the chemical etching bath 33 in the BB direction in the entire plating apparatus shown in FIG.
【０００８】この化学エッチング浴槽３３における働き
は上記した通りである。ここでは、このメッキ装置にお
ける仕組みについて説明する。このメッキ装置では、横
送り式プッシャー３３１と搬送レール３３２は、共に上
下方向に可動できるようになっている。そして、それら
の可動範囲の上限位置および下限位置が決められてお
り、その間を繰り返し動いている。吊り下げ用フック３
３３は、作業目的に応じて適した間隔に搬送レール３３
２に掛けられる。通常は、隣り合った浴槽のセンター間
の距離である。そして、メッキされる導電部材２１を吊
っているメッキ補助ラック３３４は、この吊り下げ用フ
ック３３３に掛けられ、このメッキ装置にセットされ
る。次に、横送り式プッシャー３３１について述べる。
横送り式プッシャー３３１間の距離は、基本的には、隣
り合った浴槽のセンター間の距離とほぼ等しい。そし
て、この横送り式プッシャー３３１は、１本もののアー
ムに設置されており、作業方向へ吊り下げ用フック３３
３を１スパン送ると、その分戻るようになっている。そ
して、この横送り式プッシャー３３１は、上限位置で１
スパン送り、下限位置でその分戻るようになっている。
また、搬送レール３３２は、上下方向には動くが進行方
向には動かない。この作業の繰り返しにより、このメッ
キ装置は機能している。The function of the chemical etching bath 33 is as described above. Here, the mechanism of the plating apparatus will be described. In this plating apparatus, both the lateral feed type pusher 331 and the transport rail 332 can move up and down. Then, the upper limit position and the lower limit position of the movable range are determined, and the moving range is repeated. Hanging hook 3
33 are transport rails 33 at appropriate intervals according to the work purpose.
Multiplied by two. It is usually the distance between the centers of adjacent bathtubs. Then, the auxiliary plating rack 334 hanging the conductive member 21 to be plated is hung on the hanging hook 333 and set in the plating apparatus. Next, the lateral feed type pusher 331 will be described.
The distance between the transverse feed type pushers 331 is basically equal to the distance between the centers of the adjacent bathtubs. The lateral feed type pusher 331 is mounted on one arm, and the hook 33 for hanging in the working direction.
When 3 is advanced by 1 span, it returns by that amount. And, this lateral feed type pusher 331 is 1 at the upper limit position.
Span feed and return at the lower limit position.
The transport rail 332 moves in the up-down direction but does not move in the traveling direction. By repeating this operation, the plating apparatus functions.
【０００９】上記したこのメッキ装置では、メッキ前処
理ラインを１本および半田メッキラインを１本有してい
た。例えば、導電部材２１に第１メッキ膜２２であるＳ
ｎのメッキ膜、第２メッキ膜２３であるＳｎ―Ｂｉのメ
ッキ膜を形成する場合と導電部材２１に第１メッキ膜２
２であるＳｎのメッキ膜、第２メッキ膜２３であるＳｎ
―Ａｇのメッキ膜を形成する場合とがある。この場合、
第１メッキ膜２２は両方とも同じＳｎメッキ液を使用す
ることができるが、第２メッキ膜２３は使用するメッキ
液が異なる。そのため、導電部材２１に前者のメッキ膜
を形成することを終えた後、１度メッキ装置を停止させ
後者用のメッキ液へと浴槽内のメッキ液を入れ替えてか
ら次の導電部材２１にメッキ膜を形成していた。The above-described plating apparatus has one plating pretreatment line and one solder plating line. For example, the conductive member 21 may be formed of a first plating film 22 such as S
n plating film and a second plating film 23 of Sn—Bi plating film, and the first plating film 2
2 and a second plating film 23, Sn plating film.
-An Ag plating film may be formed. in this case,
The same Sn plating solution can be used for both the first plating film 22, but the plating solution used for the second plating film 23 is different. Therefore, after the former plating film is formed on the conductive member 21, the plating apparatus is stopped once, the plating solution in the bath is replaced with a plating solution for the latter, and then the plating film is formed on the next conductive member 21. Had formed.
【００１０】[0010]
【発明が解決しようとする課題】上記したように、この
半田メッキ装置では、メッキ前処理ラインを１本および
半田メッキラインを１本有していた。そのため、導電部
材２１に複数の組み合わせのメッキ膜を形成する場合、
メッキ膜の組み合わせが換わるときに連続して作業を行
うことができないという課題が生じた。言い換えると、
このメッキ装置では、準備されたメッキ液にメッキ可能
な導電部材２１を順次浸漬して、同じメッキ膜の組み合
わせのメッキ膜を連続して形成することはできた。しか
し、メッキされる導電部材２１の使用用途に応じて、導
電部材２１に複数の組み合わせのメッキ膜を連続して形
成することができなかった。つまり、半田メッキライン
について、メッキ液の入れ替えに余分な時間と手間を費
やすという問題があった。As described above, this solder plating apparatus has one plating pretreatment line and one solder plating line. Therefore, when forming a plurality of combinations of plating films on the conductive member 21,
There has been a problem that the work cannot be performed continuously when the combination of the plating films is changed. In other words,
In this plating apparatus, the conductive members 21 capable of being plated were sequentially immersed in the prepared plating solution, so that a plating film having the same combination of plating films could be formed continuously. However, a plurality of combinations of plating films could not be continuously formed on the conductive member 21 depending on the intended use of the conductive member 21 to be plated. In other words, there is a problem that extra time and labor are required for replacing the plating solution in the solder plating line.
【００１１】更に上記したことに加えて、半田メッキラ
インを管理することに関しても、多大な労力を費やして
いた。例えば、１つのメッキ浴槽内であるメッキ液を使
用した後に、メッキ液構成の異なる他のメッキ液を使用
する場合がある。このとき、確実に前者のメッキ液を除
去しないと後者のメッキ液の液構成が変わってしまう。
また、使用するメッキ液構成が異なれば、そのメッキ浴
槽で使用されるアノードも異なり交換しなければならな
い。つまり、メッキ液管理またはメッキ浴槽管理などメ
ンテナンス面に関しても多大な労力を費やすという問題
があった。Further, in addition to the above, a great deal of labor has been spent on managing the solder plating line. For example, after using a plating solution in one plating bath, another plating solution having a different plating solution composition may be used. At this time, unless the former plating solution is reliably removed, the composition of the latter plating solution will change.
In addition, if the composition of the plating solution used is different, the anode used in the plating bath must be changed and replaced. In other words, there is a problem that a great deal of labor is spent on maintenance such as plating solution management or plating bathtub management.
【００１２】[0012]
【課題を解決するための手段】上記した目的を達成する
ために、本発明においては、メッキラインにスライド機
構を設けて、そのことにより、１本の搬送レールで導電
部材２１に連続して複数の組み合わせの単層あるいは２
層以上のメッキ膜を形成することができることに特徴を
有する。In order to achieve the above-mentioned object, in the present invention, a plating mechanism is provided with a slide mechanism so that a plurality of conductive members 21 can be continuously connected to the conductive member 21 by one transfer rail. Single layer or combination of 2
It is characterized in that a plating film having more than two layers can be formed.
【００１３】[0013]
【発明の実施の形態】図１は、本発明であるメッキ装置
を実施するためのスライド機能を有し、第１列に２つの
第１メッキ浴槽を、そして第２列には３つの第２メッキ
浴槽を有する半田メッキラインのレイアウトである。ま
た、図４に示した全体のメッキ装置の半田メッキ装置３
７に該当する。DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 has a sliding function for carrying out a plating apparatus according to the present invention, two first plating baths in a first row, and three second plating baths in a second row. It is a layout of a solder plating line having a plating bath. Further, the solder plating apparatus 3 of the entire plating apparatus shown in FIG.
It corresponds to 7.
【００１４】図１において、このメッキ装置はプレディ
ップ浴槽３７１、第１メッキ浴槽３７２、３７３第２メ
ッキ浴槽３７４、３７５、３７６、水洗用浴槽３７７が
ある。また、それぞれのメッキ浴槽には、オーバーフロ
ー浴槽３７８、３７９、３８０、３８１、３８２が設置
されている。これらの浴槽の機能は、不溶性不純物等を
メッキ浴槽内の水流を用いて浴槽内へと取り込む。そし
て、これらの浴槽内へと取り込んだメッキ液をろ過し、
そのろ過されたメッキ液をメッキ浴槽３７２、３７３、
３７４、３７５、３７６内へと送り込むことである。In FIG. 1, this plating apparatus includes a pre-dip bath 371, a first plating bath 372, 373, a second plating bath 374, 375, 376, and a washing bath 377. In addition, overflow baths 378, 379, 380, 381, and 382 are provided in each plating bath. The function of these bathtubs is to take insoluble impurities and the like into the bathtub using the water flow in the plating bathtub. Then, the plating solution taken into these bathtubs is filtered,
The filtered plating solution is applied to plating baths 372, 373,
374, 375, 376.
【００１５】本発明では、半田メッキラインにおいて、
１本の搬送レールでメッキ可能な導電部材２１に、連続
して複数の組み合わせのメッキ膜を使用用途に応じて形
成することができることに特徴を有する。In the present invention, in the solder plating line,
It is characterized in that a plurality of combinations of plating films can be continuously formed on the conductive member 21 that can be plated with one transfer rail according to the intended use.
【００１６】具体的に言うと、この半田メッキラインの
仕組みも上記した図５と同様である。例えば、この図１
の半田メッキラインでは、メッキ浴槽３７３にはＳｎの
メッキ液が入れられ、メッキ浴槽３７５にはＳｎ―Ａｇ
のメッキ液が入れられ、メッキ浴槽３７６にはＳｎ―Ｂ
ｉのメッキ液が入れられ、メッキ浴槽３７２、３７４は
空である。そして、これらのメッキ浴槽は、メッキされ
た導電部材２１の使用用途に応じて必要なメッキ浴槽が
選択され搬送レールの下へと移動し、導電部材２１にメ
ッキ膜を形成する。この結果、導電部材２１にＳｎの単
層のメッキ膜が形成されたり、１層目がＳｎで２層目が
Ｓｎ―ＡｇまたはＳｎ―Ｂｉのメッキ膜などが形成され
る。なおリード材の構造は図３と同じであるので符号を
共通とした。Specifically, the structure of the solder plating line is the same as that shown in FIG. For example, in FIG.
, A plating bath of 373 is filled with a Sn plating solution, and a plating bath 375 is filled with Sn—Ag.
Of plating solution, and the plating bath 376 contains Sn-B
The plating solution i is filled, and the plating baths 372 and 374 are empty. In these plating baths, a necessary plating bath is selected depending on the use of the plated conductive member 21 and moves below the transport rail to form a plating film on the conductive member 21. As a result, a single-layer Sn plating film is formed on the conductive member 21, or a Sn-Ag or Sn-Bi plating film is formed on the first layer of Sn and the second layer. The structure of the lead material is the same as that of FIG.
【００１７】第１に、導電部材２１にＳｎ単層の第１メ
ッキ膜２２のみを形成するケースについて述べる。ここ
では、上記したように、Ｓｎのメッキ液が入れられた第
１メッキ浴槽３７３と空のメッキ浴槽３７４が選択され
る。上記したメッキ前処理ラインで処理された導電部材
２１は、プレディップ浴槽３７１で表面の水酸膜の除去
を行いながら、その間に第１メッキ浴槽３７３は搬送レ
ールの下へ移動する。そして、ここでＳｎのメッキ膜が
形成されている間に第２メッキ浴槽３７４は搬送レール
の下へ移動する。Ｓｎのメッキ膜が形成された導電部材
２１は第２メッキ浴槽３７４に移動するが、このメッキ
浴槽にはメッキ液が入っていないためメッキ膜は形成さ
れない。次に、水洗用浴槽３７７でメッキされた導電部
材２１を洗浄する。この結果、導電部材２１にＳｎの単
層メッキ膜のみが形成される。First, a case where only the first plating film 22 of a single Sn layer is formed on the conductive member 21 will be described. Here, as described above, the first plating bath 373 containing the Sn plating solution and the empty plating bath 374 are selected. The conductive member 21 processed in the above-mentioned plating pretreatment line removes the surface hydroxyl film in the pre-dip bath 371 while the first plating bath 373 moves below the transport rail. Then, while the Sn plating film is being formed, the second plating bath 374 moves below the transport rail. The conductive member 21 on which the Sn plating film is formed moves to the second plating bath 374. However, since the plating bath does not contain a plating solution, no plating film is formed. Next, the plated conductive member 21 is washed in the washing bath 377. As a result, only the Sn single-layer plating film is formed on the conductive member 21.
【００１８】ここで、図１のメッキ装置では、２列目の
メッキ浴槽移動手段に空のメッキ浴槽を有していたた
め、上記したように、導電部材２１にＳｎ単層のメッキ
膜が形成された。しかし、次のような場合もある。それ
は、２列目のメッキ浴槽移動手段が搬送レールの下にメ
ッキ浴槽を配置しない場合であり、また、搬送レールの
下に水洗用浴槽を選択する場合である。前者の場合は、
搬送レールの下にメッキ液が存在せず導電部材２１にメ
ッキ膜が形成されない。後者の場合は、メッキされた導
電部材２１の表面を純水により洗浄するのみでメッキ膜
は形成されない。Here, in the plating apparatus of FIG. 1, since the plating bath moving means in the second row has an empty plating bath, the Sn single-layer plating film is formed on the conductive member 21 as described above. Was. However, there are some cases as follows. That is, the case where the plating bath moving means in the second row does not arrange the plating bath under the transport rail, and the case where the washing bath is selected under the transport rail. In the former case,
There is no plating solution below the transport rail, and no plating film is formed on the conductive member 21. In the latter case, only the surface of the plated conductive member 21 is washed with pure water, and no plating film is formed.
【００１９】第２に、導電部材２１に２層の第１メッキ
膜２２および第２メッキ膜２３を形成するケースについ
て述べる。導電部材２１にメッキ膜を形成する工程は上
記した内容と同様である。しかし、今度は第２メッキ浴
槽３７５または３７６が選択され、導電部材２１にＳｎ
―ＡｇまたはＳｎ―Ｂｉの第２メッキ膜２３が形成され
る。この結果、導電部材２１は、ＳｎとＳｎ―Ａｇまた
はＳｎとＳｎ―Ｂｉの２層のメッキ膜が形成される。Second, a case in which two layers of the first plating film 22 and the second plating film 23 are formed on the conductive member 21 will be described. The step of forming a plating film on the conductive member 21 is the same as the above-described content. However, this time, the second plating bath 375 or 376 is selected, and Sn is added to the conductive member 21.
The second plating film 23 of -Ag or Sn-Bi is formed. As a result, as the conductive member 21, a two-layer plating film of Sn and Sn—Ag or Sn and Sn—Bi is formed.
【００２０】ここで、図１のメッキ装置では、第１メッ
キ浴槽のメッキ液の金属材料はＳｎであり、第２メッキ
浴槽のメッキ液の金属材料はＳｎ―ＡｇまたはＳｎ―Ｂ
ｉである。そして、それらの金属とそれを溶かす溶剤を
除いた溶液が同一の液構成であるため、導電部材２１に
連続してメッキ膜を形成することができる。しかし、液
構成の異なるメッキ液で導電部材２１にメッキ膜を形成
する場合もある。このとき、２列目のメッキ浴槽移動手
段に洗浄用の水洗用浴槽を有することにより、その浴槽
で導電部材２１の表面を洗浄できるため、メッキ液の液
構成に関係なく１本の搬送レールで連続して複数の組み
合わせのメッキ膜を形成することができる。In the plating apparatus of FIG. 1, the metal material of the plating solution in the first plating bath is Sn, and the metal material of the plating solution in the second plating bath is Sn-Ag or Sn-B.
i. Since the solution except for the metal and the solvent for dissolving the metal has the same composition, a plating film can be continuously formed on the conductive member 21. However, a plating film may be formed on the conductive member 21 using plating solutions having different liquid compositions. At this time, since the surface of the conductive member 21 can be washed in the bath by providing the washing bath for washing in the plating bath moving means in the second row, the single transfer rail can be used regardless of the composition of the plating solution. A plurality of combinations of plating films can be continuously formed.
【００２１】よって、本発明では、メッキ液構成の異な
る複数のメッキ液が入れられたメッキ浴槽をあらかじめ
用意する。そして、それらのメッキ浴槽を使用用途に応
じて選択して用いることができる。その結果、１本の搬
送レールで連続して、複数の組み合わせのメッキ膜を形
成することができる。Therefore, in the present invention, a plating bath containing a plurality of plating solutions having different plating solution configurations is prepared in advance. These plating baths can be selected and used according to the intended use. As a result, a plurality of combinations of plating films can be continuously formed on one transfer rail.
【００２２】つまり、上記したメッキ前処理ラインと同
様に、連続して１本の搬送レールで複数の組み合わせの
メッキ膜を導電部材２１に形成することができる。この
ことにより、メッキ膜の組み合わせに応じてメッキ装置
を一時停止させ浴槽内のメッキ液を入れ換える必要がな
くなる。この結果、作業時間を大幅に短縮させることが
でき、かつ、メッキ液を入れ換える手間を省くことがで
きる。また、同一の浴槽でのメッキ液の入れ換えのと
き、それぞれのメッキ液同志が混入することがなくなり
メッキ液の管理およびメッキ浴槽、メッキ用設備などの
メンテナンスにおける労力も大幅に減らすことができ
る。That is, similarly to the above-described plating pretreatment line, a plurality of combinations of plating films can be continuously formed on the conductive member 21 by one transport rail. This eliminates the need to temporarily stop the plating apparatus according to the combination of plating films and replace the plating solution in the bathtub. As a result, the working time can be significantly reduced, and the labor for replacing the plating solution can be omitted. Further, when the plating baths are exchanged in the same bath, the plating baths do not mix with each other, and the labor for the management of the plating baths and the maintenance of the plating bath, plating equipment and the like can be greatly reduced.
【００２３】他にも、１本の搬送レールで連続して複数
の組み合わせのメッキ膜を形成できる。例えば、第１メ
ッキ浴槽では空のメッキ浴槽を選択し、第２および第３
メッキ浴槽でメッキ膜を形成する方法や第１および第２
メッキ浴槽では空のメッキ浴槽を選択し第３メッキ浴槽
のみで単層のメッキ膜を形成する方法などがある。ま
た、隣り合ったメッキラインに同一組成のメッキ液が入
れられたメッキ浴槽を有し、それらの浴槽を連続して選
択することにより導電部材２１に厚いメッキ膜を形成す
ることができる。In addition, a plurality of combinations of plating films can be continuously formed on one transfer rail. For example, in the first plating bath, an empty plating bath is selected, and the second and third plating baths are selected.
A method for forming a plating film in a plating bath, a first method and a second method
As a plating bath, there is a method of selecting an empty plating bath and forming a single-layer plating film only with the third plating bath. Further, adjacent plating lines have plating baths in which plating solutions of the same composition are put, and a thick plating film can be formed on the conductive member 21 by continuously selecting the baths.
【００２４】いずれの場合にしても、上記したように、
本発明であるスライド機能を用いることにより、１本の
搬送レールで連続して複数の組み合わせのメッキ膜を形
成することが可能である。In any case, as described above,
By using the slide function of the present invention, it is possible to form a plurality of combinations of plating films continuously with one transport rail.
【００２５】上記したように、半田メッキの場合を例と
して説明してきたが、このメッキ装置は半田メッキに限
らず利用することができる。例えば、Ｓｎメッキ、Ｃｕ
メッキ、Ｎｉメッキなどがある。これらの場合にも、こ
のメッキ装置を用いて１本の搬送レールで連続して導電
部材２１に複数の組み合わせのメッキ膜を形成すること
ができる。As described above, the case of solder plating has been described as an example, but this plating apparatus can be used not only for solder plating. For example, Sn plating, Cu
There are plating, Ni plating and the like. Also in these cases, a plurality of combinations of plating films can be formed on the conductive member 21 continuously using one plating rail by using this plating apparatus.
【００２６】[0026]
【発明の効果】以上の説明で明らかなように、本発明の
メッキ装置には次のような効果が得られる。As is apparent from the above description, the plating apparatus of the present invention has the following effects.
【００２７】それは、このメッキ装置は半田メッキライ
ンにてスライド機能を有することにより、１本の搬送レ
ールで連続して単層のまたは複数の組み合わせのメッキ
膜を形成することができる。そのため、導電部材に形成
するメッキ膜が換わるごとにメッキ液を交換することが
なくなり、メッキ装置を一時停止することがない。この
ことにより、１本の搬送レールで連続して導電部材に複
数の組み合わせのメッキ膜を形成することができ、か
つ、メッキ液を入れ換える手間を省くことができる。ま
た、同一の浴槽でのメッキ液の入れ換えのとき、それぞ
れのメッキ液どうしが混入することがなくなりメッキ液
の管理およびメッキ浴槽、メッキ用設備などのメンテナ
ンスにおける労力も大幅に減らすことができる。Since the plating apparatus has a sliding function in a solder plating line, a single-layer or a combination of a plurality of plating films can be continuously formed on one transfer rail. Therefore, the plating solution is not changed every time the plating film formed on the conductive member is changed, and the plating apparatus is not temporarily stopped. This makes it possible to form a plurality of combinations of plating films on the conductive member continuously with one transfer rail, and to save the trouble of replacing the plating solution. Further, when the plating solutions are exchanged in the same bath tub, the respective plating solutions are not mixed with each other, so that the labor for the management of the plating solution and the maintenance of the plating bath tub and the plating equipment can be greatly reduced.
【図１】本発明のメッキ装置に用いるメッキラインを説
明する図である。FIG. 1 is a diagram illustrating a plating line used in a plating apparatus of the present invention.
【図２】本発明および従来のメッキを施す半導体チップ
を説明する図である。FIG. 2 is a diagram illustrating a semiconductor chip to be plated according to the present invention and a conventional method.
【図３】本発明および従来の２層メッキ膜から成る図２
に示した半導体リードフレームのＡ−Ａ方向からみた断
面を説明する図である。FIG. 3 shows the present invention and the conventional two-layer plating film shown in FIG.
FIG. 4 is a diagram illustrating a cross section of the semiconductor lead frame shown in FIG.
【図４】本発明および従来の自動メッキ装置全体のレイ
アウトを説明する図である。FIG. 4 is a diagram illustrating the layout of the present invention and the entirety of a conventional automatic plating apparatus.
【図５】本発明および従来の化学エッチング浴槽のＢ−
Ｂ方向からみた断面を説明する図である。FIG. 5 shows B- of the present invention and a conventional chemical etching bath.
It is a figure explaining the section seen from the B direction.
Claims (5)
有するメッキ装置において、 前記メッキ前処理ラインで処理された導電部材に、メッ
キ液構成の異なる複数のメッキ浴槽を有するメッキ浴槽
移動手段をスライドさせて１以上のメッキ膜を形成する
前記メッキラインを構成することを特徴とするメッキ装
置。1. A plating apparatus having a plating pretreatment line and a plating line, wherein a plating bath moving means having a plurality of plating baths having different plating liquid compositions is slid on the conductive member treated in the plating pretreatment line. Wherein the plating line forms one or more plating films.
し、前記メッキ浴槽移動手段をそれぞれスライドさせ前
記導電部材に連続して複数の組み合わせのメッキ膜を形
成することを特徴とする請求項１に記載したメッキ装
置。2. The apparatus according to claim 1, further comprising a plurality of rows of said plating bath moving means, wherein said plating bath moving means are respectively slid to form a plurality of combinations of plating films continuously on said conductive member. The plating apparatus described in 1.
浴槽の中に空のメッキ浴槽または水洗用浴槽を有するこ
とを特徴とする請求項１または請求項２に記載したメッ
キ装置。3. The plating apparatus according to claim 1, wherein an empty plating bath or a washing bath is provided among the plurality of plating baths of the plating bath moving means.
の下にメッキ浴槽を配置しないことができることを特徴
とする請求項２または請求項３に記載したメッキ装置。4. The plating apparatus according to claim 2, wherein the plating bath moving means does not need to arrange a plating bath below the transport rail.
前記メッキ浴槽移動手段に同一の液組成のメッキ液を入
れて、同一メッキ膜組成のメッキ膜を厚く形成すること
を特徴とする請求項２から請求項４のいずれかに記載し
たメッキ装置。5. The plating bath moving means, wherein a plating solution of the same liquid composition is poured into adjacent plating bath moving means to form a thick plating film of the same plating film composition. The plating apparatus according to claim 2.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000085536A JP3588304B2 (en) | 2000-03-27 | 2000-03-27 | Plating equipment |
| TW090105095A TW511291B (en) | 2000-03-27 | 2001-03-06 | Plating apparatus |
| KR1020010015541A KR100574304B1 (en) | 2000-03-27 | 2001-03-26 | Plating Apparatus |
| CNB011120681A CN1234919C (en) | 2000-03-27 | 2001-03-27 | Electroplating apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000085536A JP3588304B2 (en) | 2000-03-27 | 2000-03-27 | Plating equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001271200A true JP2001271200A (en) | 2001-10-02 |
| JP3588304B2 JP3588304B2 (en) | 2004-11-10 |
Family
ID=18601862
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000085536A Expired - Fee Related JP3588304B2 (en) | 2000-03-27 | 2000-03-27 | Plating equipment |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP3588304B2 (en) |
| KR (1) | KR100574304B1 (en) |
| CN (1) | CN1234919C (en) |
| TW (1) | TW511291B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003050328A1 (en) * | 2000-03-29 | 2003-06-19 | Sanyo Electric Co., Ltd. | Plating apparatus, plating method, and method for manufacturing semiconductor device |
| US7772043B2 (en) | 2001-12-12 | 2010-08-10 | Sanyo Electric Co., Ltd. | Plating apparatus, plating method and manufacturing method for semiconductor device |
| JP2016102223A (en) * | 2014-11-27 | 2016-06-02 | Ykk株式会社 | Plating apparatus, plating unit, and plating line |
| KR101729769B1 (en) * | 2016-09-29 | 2017-04-24 | 주식회사 지씨이 | Apparatus For Plating PCB Can Plate More Than Two Kinds Of Plating in One System |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4813935B2 (en) * | 2006-03-20 | 2011-11-09 | 上村工業株式会社 | Transport hanger |
| CN103305896B (en) * | 2012-03-07 | 2015-09-09 | 昆山东威电镀设备技术有限公司 | Continuous electroplating liquid conduction device and continuous liq electro-plating method |
| CN106319606B (en) * | 2016-07-18 | 2018-08-14 | 北京纽堡科技有限公司 | Matrix form electroplating assembly line |
| CN115573019B (en) * | 2022-12-09 | 2023-02-17 | 宁波德洲精密电子有限公司 | Electroplating cabinet for lead frame |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05255899A (en) * | 1992-03-12 | 1993-10-05 | Electroplating Eng Of Japan Co | Automatic plating device |
| JP2825732B2 (en) * | 1993-05-31 | 1998-11-18 | 大日本印刷株式会社 | Partial plating equipment for IC lead frames |
-
2000
- 2000-03-27 JP JP2000085536A patent/JP3588304B2/en not_active Expired - Fee Related
-
2001
- 2001-03-06 TW TW090105095A patent/TW511291B/en active
- 2001-03-26 KR KR1020010015541A patent/KR100574304B1/en not_active IP Right Cessation
- 2001-03-27 CN CNB011120681A patent/CN1234919C/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003050328A1 (en) * | 2000-03-29 | 2003-06-19 | Sanyo Electric Co., Ltd. | Plating apparatus, plating method, and method for manufacturing semiconductor device |
| US7772043B2 (en) | 2001-12-12 | 2010-08-10 | Sanyo Electric Co., Ltd. | Plating apparatus, plating method and manufacturing method for semiconductor device |
| JP2016102223A (en) * | 2014-11-27 | 2016-06-02 | Ykk株式会社 | Plating apparatus, plating unit, and plating line |
| KR101729769B1 (en) * | 2016-09-29 | 2017-04-24 | 주식회사 지씨이 | Apparatus For Plating PCB Can Plate More Than Two Kinds Of Plating in One System |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100574304B1 (en) | 2006-04-27 |
| CN1234919C (en) | 2006-01-04 |
| TW511291B (en) | 2002-11-21 |
| KR20010091034A (en) | 2001-10-22 |
| CN1322863A (en) | 2001-11-21 |
| JP3588304B2 (en) | 2004-11-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3588304B2 (en) | Plating equipment | |
| US20040235219A1 (en) | Plating apparatus, plating method, and method for manufacturing semiconductor device | |
| EP1521862B1 (en) | Immersion plating of silver | |
| US7772043B2 (en) | Plating apparatus, plating method and manufacturing method for semiconductor device | |
| KR100695373B1 (en) | Plating apparatus | |
| JP3557150B2 (en) | Plating equipment | |
| JP4029936B2 (en) | Manufacturing method of semiconductor device | |
| KR100695372B1 (en) | Plating method | |
| KR100582129B1 (en) | Plating device | |
| CN100457979C (en) | Electroplating device | |
| JP3568486B2 (en) | Method for manufacturing semiconductor device | |
| CA2467037A1 (en) | Manufacturing method for semiconductor device | |
| JP3548081B2 (en) | Plating method and plating apparatus used therefor | |
| EP1464731A1 (en) | Plating apparatus, plating method, and method for manufacturing semiconductor device | |
| JP3995564B2 (en) | Semiconductor device and manufacturing method thereof | |
| JP4027324B2 (en) | Semiconductor device | |
| KR20070005027A (en) | Method for manufacturing semiconductor device | |
| CN113897657A (en) | Automatic intelligent tinning production line |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20040330 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20040520 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20040727 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20040812 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20070820 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080820 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090820 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100820 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100820 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110820 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110820 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120820 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120820 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130820 Year of fee payment: 9 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |