JP2001234390A - Plating method - Google Patents

Plating method

Info

Publication number
JP2001234390A
JP2001234390A JP2000052533A JP2000052533A JP2001234390A JP 2001234390 A JP2001234390 A JP 2001234390A JP 2000052533 A JP2000052533 A JP 2000052533A JP 2000052533 A JP2000052533 A JP 2000052533A JP 2001234390 A JP2001234390 A JP 2001234390A
Authority
JP
Japan
Prior art keywords
plating
plating solution
solution
conductive member
bath
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000052533A
Other languages
Japanese (ja)
Other versions
JP3523556B2 (en
Inventor
Kojiro Kameyama
工次郎 亀山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Sanyo Electric Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Electric Co Ltd, Sanyo Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Priority to JP2000052533A priority Critical patent/JP3523556B2/en
Priority to TW090104478A priority patent/TW506100B/en
Priority to KR1020010009848A priority patent/KR100695372B1/en
Priority to CNB011123761A priority patent/CN1307327C/en
Publication of JP2001234390A publication Critical patent/JP2001234390A/en
Application granted granted Critical
Publication of JP3523556B2 publication Critical patent/JP3523556B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/56—Electroplating: Baths therefor from solutions of alloys
    • C25D3/60—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of tin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a convenient lead-free soldering method to meet the demand of environmental protection. SOLUTION: A conductive member 21 is dipped in a first plating solution and then in a second plating solution to deposit two plating films 22 and 23 each of a different metallic material by this plating method. The first plating solution and the second plating solution have the same composition except a metallic material and an acidic solvent to dissolve the metallic material, hence a water washing bath is not needed, and a plating method is realized wherein the concentration control of the plating solution is facilitated.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明はメッキ方法に関し、
特に鉛フリーのメッキでかつ半田付け特性の良好な金属
材料のメッキ膜を連続して形成するメッキ方法に関す
る。TECHNICAL FIELD The present invention relates to a plating method.
In particular, the present invention relates to a plating method for continuously forming a plating film of a metal material which is lead-free plating and has good soldering characteristics.

【０００２】[0002]

【従来の技術】Ｃｕ単体、Ｃｕ合金またはＦｅ―Ｎｉ合
金のような導電部材の表面を、Ｓｎ単体またはＳｎ合金
のメッキ層で被覆したリード材は、Ｃｕ単体またはＣｕ
合金が備えている優れた導電性と機械的強度を有し、か
つ、Ｓｎ単体またはＳｎ合金が備えている耐食性と良好
な半田付け性をも併有する高性能導体であって、各種の
端子、コネクタ、リードのような電気・電子機器分野や
電力ケーブルの分野などで多用されている。2. Description of the Related Art A lead material in which the surface of a conductive member such as simple Cu, a Cu alloy or an Fe--Ni alloy is coated with a single Sn or Sn alloy plating layer is a simple Cu or Cu alloy.
It is a high-performance conductor having excellent conductivity and mechanical strength provided by the alloy, and also having corrosion resistance and good solderability provided by Sn alone or Sn alloy. It is widely used in the field of electric and electronic devices such as connectors and leads, and in the field of power cables.

【０００３】また、半導体チップを回路基板に搭載する
場合には、半導体チップのアウターリード部にＳｎ合金
を用いた溶融メッキや電気メッキを行うことにより、当
該アウターリード部の半田付け性を向上せしめることが
行われている。このようなＳｎ合金の代表例は半田（Ｓ
ｎ―Ｐｂ合金）であり半田付け性、耐食性などが良好な
ために、コネクタやリードフレームなどの電気・電子工
業用部品の工業用メッキとして広く利用されている。When a semiconductor chip is mounted on a circuit board, the outer lead portion of the semiconductor chip is subjected to hot-dip plating or electroplating using an Sn alloy to improve the solderability of the outer lead portion. That is being done. A typical example of such a Sn alloy is solder (S
(n-Pb alloy) and has good solderability, corrosion resistance, etc., and thus is widely used as industrial plating for electrical and electronic parts such as connectors and lead frames.

【０００４】しかしながら、半田に使用されているＰｂ
は人体に悪影響を与える虞があるとのことから有害性が
指摘されるようになり、Ｐｂの使用を規制しようとする
動きが世界的に生じている。例えば、屋外に廃棄された
電子機械類などが酸性雨にさらされると、機械内部に使
用されている半田（Ｓｎ―Ｐｂ合金）や、電子部品の表
面に施されている半田メッキからＰｂが溶けだし、これ
が原因で地下水や河川が汚染される。環境汚染を防止す
るには、Ｐｂを含有しないＳｎ合金を使用することが最
善である。このため、従来のＳｎ―Ｐｂメッキ液に代わ
るＰｂを含有しない新しいメッキ液が開発されつつあ
る。そして、Ｐｂを含有しないＳｎを主成分とするメッ
キ液、例えば、Ｓｎ―Ｂｉ系、Ｓｎ―Ａｇ系、Ｓｎ―Ｃ
ｕ系のメッキ液が開発されており、代替されつつある。However, Pb used for soldering
It has been pointed out that harmful effects may have on the human body, and movements to regulate the use of Pb are occurring worldwide. For example, when electronic machinery discarded outdoors is exposed to acid rain, Pb begins to melt from the solder (Sn-Pb alloy) used inside the machine and the solder plating applied to the surface of the electronic component. This causes pollution of groundwater and rivers. In order to prevent environmental pollution, it is best to use a Pb-free Sn alloy. For this reason, a new plating solution containing no Pb has been developed in place of the conventional Sn-Pb plating solution. Then, a plating solution containing Sn as a main component and containing no Pb, for example, Sn-Bi, Sn-Ag, Sn-C
u-based plating solutions have been developed and are being replaced.

【０００５】図３はリード材の基本構成を示す断面図で
ある。例えば、導電部材２１はＣｕ、Ｃｕを主成分とし
たＣｕ系合金またはＦｅ―Ｎｉを主成分としたＦｅ―Ｎ
ｉ系合金で構成されている。そして、それらの導電部材
２１の表面には、異なる金属材料の２層のメッキ膜が施
されている。例えば、Ｓｎの第１メッキ膜２２とＳｎ―
Ｂｉの第２メッキ膜２３がこの順序で形成されている。
ここで、第１メッキ膜２２の厚さをｔ1、第２メッキ膜
３の厚さをｔ2としたとき、ｔ1は約３〜１５μｍ、ｔ2
は約１〜５μｍ、ｔ2／ｔ1は約０．１〜０．５に設定す
ると、コストの面でも、半田付け性、耐熱性の点でも、
また半田の接合強度やアルミ線などとの溶接部の溶接強
度の点でも良好な特性があり、リード材としての性能向
上が得られるので好適であることが知られている。FIG. 3 is a sectional view showing a basic structure of a lead material. For example, the conductive member 21 is made of Cu, a Cu-based alloy containing Cu as a main component, or Fe—N containing Fe—Ni as a main component.
It is composed of an i-based alloy. The surfaces of the conductive members 21 are plated with two layers of different metal materials. For example, the first plating film 22 of Sn and Sn-
The Bi second plating film 23 is formed in this order.
Here, assuming that the thickness of the first plating film 22 is t 1 and the thickness of the second plating film 3 is t 2 , t 1 is about 3 to 15 μm and t 2
Is set to about 1 to 5 μm, and t 2 / t 1 is set to about 0.1 to 0.5. In terms of cost, solderability and heat resistance,
It is also known that it has good characteristics in terms of solder bonding strength and welding strength of a welded portion with an aluminum wire or the like, and is preferable because it improves performance as a lead material.

【０００６】図４は、自動メッキ装置全体のレイアウト
である。まず、アルカリ電解洗浄浴槽３１において、導
電部材２１の表面における半田メッキ皮膜の密着性や半
田付け性を阻害する油脂等の有機性の汚染物質の除去を
行う。次に、水洗用浴槽３２において洗浄された後、化
学エッチング浴槽３３において、化学エッチング処理
（基本的には酸化―還元反応を利用した処理）を行い、
粒界や介在物などの存在により不均一な表面になってい
る導電部材２１の表面を均一化する。FIG. 4 shows the layout of the entire automatic plating apparatus. First, in the alkaline electrolytic cleaning bath 31, organic contaminants such as oils and fats which inhibit the adhesion and solderability of the solder plating film on the surface of the conductive member 21 are removed. Next, after being washed in the rinsing bath 32, a chemical etching process (basically a process utilizing an oxidation-reduction reaction) is performed in the chemical etching bath 33,
The surface of the conductive member 21 having an uneven surface due to the presence of grain boundaries and inclusions is made uniform.

【０００７】次に、水洗用浴槽３４において洗浄された
後、酸活性化浴槽３５において、水洗用浴槽３４で付着
した酸化膜を除去する。次に、水洗用浴槽３６において
洗浄された後、半田メッキ装置３７においてメッキが施
される。半田メッキ液は強酸性のため、メッキ後の表面
は酸性になっている。そのような表面では時間の経過と
ともに皮膜が変色し、半田付け性が劣化する。そのため
に、水洗用浴槽３８、中和処理浴槽３９において、メッ
キ表面に残留する酸を中和し、吸着している有機物を除
去する。その後、水洗用浴槽４０、湯洗用浴槽４１で洗
浄され、乾燥装置４２において、メッキされた導電部材
を乾燥させる。Next, after being washed in the washing bath 34, the oxide film adhered in the washing bath 34 is removed in the acid activating bath 35. Next, after being washed in the rinsing bath 36, plating is performed in the solder plating device 37. Since the solder plating solution is strongly acidic, the surface after plating is acidic. On such a surface, the film discolors over time, and the solderability deteriorates. For this purpose, in the washing bath 38 and the neutralization bath 39, the acid remaining on the plating surface is neutralized, and the adsorbed organic substances are removed. After that, the conductive member that has been washed in the water-washing bath 40 and the hot-water bath 41 and dried in the drying device 42 is dried.

【０００８】図５は、従来のメッキ装置３７におけるメ
ッキを施す部分の詳細なレイアウトである。このメッキ
方法においては、プレデイップ浴槽３７１に導電部材２
１を浸漬して表面の水酸膜を除去し、第１メッキ浴槽３
７２のメッキ液に浸漬し第１メッキ膜２２を施した後、
導電部材２１を第１メッキ浴槽３７２のメッキ液と第２
メッキ浴槽３７４のメッキ液との間に設けられていた水
洗用浴槽３７３の純水に浸漬して第１のメッキ液を取り
除き、続いて導電部材２１を第２メッキ浴槽３７４のメ
ッキ液に浸漬し第２メッキ膜２３を施す。そして、最後
に水洗用浴槽３７５でメッキ面の洗浄を行う。FIG. 5 is a detailed layout of a portion to be plated in a conventional plating apparatus 37. In this plating process, conducted to Purede Lee-up tub 371 member 2
The first plating bath 3 is immersed to remove the hydroxyl film on the surface.
After immersing in the plating solution of No. 72 and applying the first plating film 22,
The conductive member 21 is combined with the plating solution in the first plating bath 372 and the second plating bath 372.
The first plating solution is removed by immersion in pure water in a washing bath 373 provided between the plating solution in the plating bath 374 and the conductive member 21 is then immersed in the plating solution in the second plating bath 374. A second plating film 23 is applied. Then, finally, the plating surface is washed in the washing bath 375.

【０００９】上記したメッキ方法では、第１メッキ膜２
２を施す第１メッキ浴槽３７２のメッキ液と第２メッキ
膜２３を施す第２メッキ浴槽３７４のメッキ液は、それ
ぞれのメッキ液を構成する金属材料およびそれを溶かす
酸性溶剤を除くと同一の液構成ではなかった。例えば、
第１メッキ膜２２がＳｎ単体から成り第２メッキ膜２３
がＳｎ―Ｂｉ合金からなる場合、第１メッキ浴槽３７２
および第２メッキ浴槽３７４のメッキ液の構成において
は、有機酸、溶剤、および純水に関しては同一の液構成
である材料を使用している。しかし、添加剤に関して
は、前者は、一般に半田メッキ液用の添加剤を使用し、
後者は、一般にＳｎ―Ｂｉメッキ液用の添加剤を使用し
ている。In the above plating method, the first plating film 2
The plating solution of the first plating bath 372 for applying the second plating solution and the plating solution of the second plating bath 374 for applying the second plating film 23 are the same solution except for the metal material constituting each plating solution and the acidic solvent for dissolving the same. It was not a configuration. For example,
The first plating film 22 is made of Sn alone and the second plating film 23
Is made of Sn—Bi alloy, the first plating bath 372
In the composition of the plating solution in the second plating bath 374, the same liquid composition is used for the organic acid, the solvent, and the pure water. However, with regard to additives, the former generally uses additives for solder plating solutions,
The latter generally uses an additive for a Sn-Bi plating solution.

【００１０】また、第１メッキ浴槽３７２と第２メッキ
浴槽３７４は同じ形状のものを使用される場合が多い。The first plating bath 372 and the second plating bath 374 often have the same shape.

【００１１】この様なメッキ方法は、特開平１０−２２
９１５２号公報に説明されている。[0011] Such a plating method is disclosed in Japanese Patent Laid-Open No. Hei 10-22.
No. 9152.

【００１２】[0012]

【発明が解決しようとする課題】まず、上記したように
第１メッキ膜２２を施す第１メッキ浴槽３７２のメッキ
液と第２メッキ膜２３を施す第２メッキ浴槽３７４のメ
ッキ液は、それぞれのメッキ液を構成する金属材料およ
びそれを溶かす酸性溶剤を除くと同一の液構成ではな
い。そのため、第１メッキ浴槽３７２のメッキ液が導電
部材２１に付着して第２メッキ浴槽３７４のメッキ液内
に直接持ち込まれることがないように、第１メッキ浴槽
３７２のメッキ液と第２メッキ浴槽３７４のメッキ液と
の間に水洗用浴槽３７３が設けられている。そして、こ
の水洗用浴槽３７３の純水を使用して第１メッキ浴槽３
７２のメッキ液を除去しなければならなかった。従っ
て、従来のメッキ方法では水洗用浴槽３７３が不可欠で
あり、余分な工程を必要とする問題があった。First, as described above, the plating solution of the first plating bath 372 for applying the first plating film 22 and the plating solution of the second plating bath 374 for applying the second plating film 23 are respectively. Except for the metal material constituting the plating solution and the acidic solvent for dissolving it, the composition is not the same. Therefore, the plating solution of the first plating bath 372 and the plating bath of the second plating bath 372 are prevented so that the plating solution of the first plating bath 372 does not adhere to the conductive member 21 and is directly carried into the plating solution of the second plating bath 374. A washing bath 373 is provided between the plating bath 374 and the plating solution 374. Then, using the pure water in the washing bath 373, the first plating bath 3
72 plating solutions had to be removed. Therefore, in the conventional plating method, the washing bath 373 is indispensable, and there is a problem that an extra step is required.

【００１３】また、第２メッキ膜２３を施す第２メッキ
浴槽３７４のメッキ液において、第１メッキ膜２２が施
された導電部材２１が、水洗用浴槽３７３で洗浄された
後第２メッキ浴槽３７４のメッキ液に浸漬される。その
際、水洗用浴槽３７３の純水が第２メッキ浴槽３７４の
メッキ液内へ混入するため、第２メッキ浴槽３７４のメ
ッキ液が希釈される。よって、第２メッキ浴槽３７４の
メッキ液の構成管理および濃度管理が必ず必要であり、
工程管理が複雑であるという問題もあった。In the plating solution in the second plating bath 374 for applying the second plating film 23, the conductive member 21 on which the first plating film 22 has been applied is washed in the washing bath 373 and then the second plating bath 374. Dipped in a plating solution. At that time, since the pure water in the washing bath 373 is mixed into the plating solution in the second plating bath 374, the plating solution in the second plating bath 374 is diluted. Therefore, it is necessary to control the composition and concentration of the plating solution in the second plating bath 374.
There was also a problem that the process management was complicated.

【００１４】更に、第１メッキ浴槽３７２のメッキ液お
よび第２メッキ浴槽３７４のメッキ液内に含まれる金属
材料は、導電部材２１にメッキされるほかに、アノード
にも置換析出される。しかし、第２メッキ液を構成する
Ｂｉ、ＡｇおよびＣｕは、アノードに顕著に置換析出さ
れるため、それらを補充する量も大幅に多くなる。一
方、金属材料（特にＢｉ、ＡｇおよびＣｕ）は高価であ
るため、コスト高の原因となる問題もあった。Further, the metal material contained in the plating solution of the first plating bath 372 and the plating solution of the second plating bath 374 is not only plated on the conductive member 21 but also deposited on the anode. However, Bi, Ag, and Cu constituting the second plating solution are remarkably substituted and deposited on the anode, so that the amount of replenishment thereof is greatly increased. On the other hand, metal materials (especially Bi, Ag, and Cu) are expensive, and there is a problem that causes an increase in cost.

【００１５】[0015]

【課題を解決するための手段】本発明は、上記した従来
の問題点に鑑みてなされたもので、導電部材の表面に、
異なる金属材料のまたは同一金属材料であるが金属材料
の組成比率が異なる２層のメッキ膜である第１メッキ膜
と第２メッキ膜を施すメッキ方法において、作業工程の
短縮、濃度管理の簡易化できるメッキ方法を提供するこ
とを目的とする。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned conventional problems, and has the following problems.
In a plating method for applying a first plating film and a second plating film, which are two-layer plating films of different metal materials or the same metal material but different composition ratios of the metal materials, shortening of work steps and simplification of concentration management. An object of the present invention is to provide a plating method that can be performed.

【００１６】上記した目的を達成するために、本発明に
おいては、第１メッキ液および第２メッキ液に含まれる
構成を金属材料およびそれを溶かす酸性溶剤を除くと実
質的に同一の液構成とすることに特徴を有する。具体的
には第１メッキ液と第２メッキ液に含まれる金属材料お
よびそれを溶かす酸性溶剤を除いた有機酸、溶剤、添加
剤および純水を実質的に同一の液構成とすることに特徴
がある。In order to achieve the above-mentioned object, in the present invention, the constitution contained in the first plating solution and the second plating solution is substantially the same as the constitution except for the metallic material and the acidic solvent for dissolving the metallic material. It is characterized by Specifically, the present invention is characterized in that organic materials, solvents, additives, and pure water except for the metal material contained in the first plating solution and the second plating solution and the acidic solvent for dissolving the same have substantially the same composition. There is.

【００１７】[0017]

【発明の実施の形態】図１は、本発明であるメッキ方法
を実施するための自動メッキ装置におけるメッキを施す
部分のレイアウトを示したものであり、図４に示した全
体のメッキ装置の半田メッキ装置３７に該当する。FIG. 1 shows a layout of a portion to be plated in an automatic plating apparatus for carrying out a plating method according to the present invention, and shows a soldering of the entire plating apparatus shown in FIG. This corresponds to the plating device 37.

【００１８】図１において、自動メッキ装置はプレデイ
ップ浴槽１、第１メッキ浴槽２、第２メッキ浴槽３、水
洗用浴槽４とで構成されている。プレデイップ浴槽１で
は、導電部材２１（図３参照）に前の水洗用浴槽３６
（図４参照）で洗浄される際に付着した酸化膜を除去
し、導電部材２１の表面を活性状態にする。第１メッキ
浴槽２では、導電部材２１に第１メッキ膜２２を施し、
そして、第２メッキ浴槽３では、導電部材２１に第２メ
ッキ膜２３を施す。ここで、メッキ膜厚については、従
来どおり第１メッキ膜２２の厚さをｔ1、前記第２メッ
キ膜２３の厚さをｔ2としたとき、ｔ1は約３〜１５μ
ｍ、ｔ2は約１〜５μｍ、ｔ2／ｔ1は約０．１〜０．５
となるようにメッキされる。なおリード材の構造は図３
と同じであるので符号を共通とした。[0018] In FIG. 1, the automatic plating device Purede Lee
It comprises a bathtub 1, a first plating bath 2, a second plating bath 3, and a washing bath 4. Purede Lee-up in the bathtub 1, tub washing before the conductive member 21 (see FIG. 3) 36
The oxide film adhered during the cleaning in (see FIG. 4) is removed, and the surface of the conductive member 21 is activated. In the first plating bath 2, a first plating film 22 is applied to the conductive member 21,
Then, in the second plating bath 3, the second plating film 23 is applied to the conductive member 21. Here, as for the plating film thickness, assuming that the thickness of the first plating film 22 is t 1 and the thickness of the second plating film 23 is t 2 as in the conventional case, t 1 is about 3 to 15 μm.
m and t 2 are about 1 to 5 μm, and t 2 / t 1 is about 0.1 to 0.5
It is plated so that The structure of the lead material is shown in FIG.
Since it is the same as that of FIG.

【００１９】本発明では、第１メッキ浴槽２のメッキ液
および第２メッキ浴槽３のメッキ液に含まれる第１およ
び第２金属材料およびそれらを溶かす酸性溶剤を除いた
溶液を同一の液構成にした。このことにより、導電部材
２１を第１メッキ浴槽２のメッキ液に浸漬して第１メッ
キ膜２２を施した後、連続して第２メッキ浴槽３のメッ
キ液に浸漬して第２メッキ膜２３とを施すことができる
ことに特徴を有する。In the present invention, the first and second metal materials contained in the plating solution of the first plating bath 2 and the plating solution of the second plating bath 3 and the solution excluding the acidic solvent for dissolving them are formed into the same solution. did. Thus, the conductive member 21 is immersed in the plating solution of the first plating bath 2 to form the first plating film 22, and then continuously immersed in the plating solution of the second plating bath 3 to form the second plating film 23. The feature is that it can be performed.

【００２０】すなわち、第１メッキ浴槽２のメッキ液の
構成としては、すべてあるいはほとんどすべての第１金
属材料をＳｎとし、これらの金属材料およびこれらを溶
かす酸性溶剤を除いた溶液は有機酸、溶剤、添加剤およ
び純水で構成されている。例えば、有機酸にはメタンス
ルホン酸またはプロパノールスルホン酸が含まれ、溶剤
にはイソプロピルアルコールが含まれている。そして、
第２メッキ浴槽３のメッキ液の構成としては、Ｂｉ、Ａ
ｇ、およびＣｕの中から選ばれる少なくとも１種類の第
２金属材料と第１金属材料であるＳｎとが含まれるもの
を金属材料とし、これらの金属材料およびこれらを溶か
す酸性溶剤を除いた溶液は有機酸、溶剤、添加剤および
純水で構成されている。例えば、第１メッキ浴槽２と同
様に、有機酸にはメタンスルホン酸またはプロパノール
スルホン酸が含まれ、溶剤にはイソプロピルアルコール
が含まれている。That is, the composition of the plating solution in the first plating bath 2 is such that all or almost all of the first metal material is Sn, and a solution excluding these metal materials and an acidic solvent for dissolving them is an organic acid or a solvent. , Additives and pure water. For example, organic acids include methanesulfonic acid or propanolsulfonic acid, and solvents include isopropyl alcohol. And
The composition of the plating solution in the second plating bath 3 is Bi, A
g, and a solution containing at least one kind of second metal material selected from Cu and Sn as the first metal material as a metal material, and excluding these metal materials and an acidic solvent for dissolving them, It consists of organic acids, solvents, additives and pure water. For example, similar to the first plating bath 2, the organic acid contains methanesulfonic acid or propanolsulfonic acid, and the solvent contains isopropyl alcohol.

【００２１】このため、このメッキ方法において、導電
部材２１に第１メッキ浴槽２のメッキ液が付着して、第
２メッキ浴槽３のメッキ液内に持ち込まれて２つのメッ
キ液が混入したとしても第１および第２金属材料および
それらを溶かす酸性溶剤を除いて同一の液構成としたた
め、第２メッキ浴槽３のメッキ液の構成が乱されること
はない。For this reason, in this plating method, even if the plating solution of the first plating bath 2 adheres to the conductive member 21 and is brought into the plating solution of the second plating bath 3 and the two plating solutions are mixed. Since the same liquid composition is used except for the first and second metal materials and the acidic solvent that dissolves them, the composition of the plating solution in the second plating bath 3 is not disturbed.

【００２２】一般的にメッキ液を構成するにあたって、
金属材料は酸性溶剤に溶かして用いられる。しかし、そ
の酸性溶剤はメッキ液の量に比べて極めて少量であるた
め、多少含まれてもそのメッキ液の構成になんら影響を
与えることはない。Generally, in forming a plating solution,
The metal material is used after being dissolved in an acidic solvent. However, since the amount of the acidic solvent is extremely small compared to the amount of the plating solution, even if it is contained to some extent, it does not affect the composition of the plating solution.

【００２３】従って、導電部材２１を第１メッキ浴槽２
のメッキ液に浸漬し第１メッキ膜２２を施した後、連続
して導電部材２１を第２メッキ浴槽３のメッキ液に浸漬
し第２メッキ膜２３を施すことができるようになる。そ
のため、従来における第１メッキ膜２２を施した後の水
洗用浴槽による洗浄を省略することができ、作業工程お
よび作業時間の短縮が図れる。Therefore, the conductive member 21 is connected to the first plating bath 2.
After the first plating film 22 is applied by immersion in the plating solution, the conductive member 21 can be continuously immersed in the plating solution of the second plating bath 3 to apply the second plating film 23. Therefore, it is possible to omit the conventional cleaning using the rinsing bath after the first plating film 22 is applied, and the working process and the working time can be shortened.

【００２４】次に、第２メッキ浴槽３のメッキ液に関し
ては、上記したようにこのメッキ作業工程上において、
第１メッキ浴槽２のメッキ液が導電部材２１に付着して
第２メッキ浴槽３のメッキ液に混入する。この時、第２
メッキ浴槽３のメッキ液では、導電部材２１に付着して
第１金属材料であるＳｎは持ち込まれる。しかし、Ｂ
ｉ、Ａｇ、およびＣｕの中で使用される第２金属材料は
持ち込まれない。更に、Ｂｉ、Ａｇ、およびＣｕの中で
使用される第２金属材料は導電部材２１にＳｎとの合金
として析出される他、アノードに置換析出される。ま
た、それに加えてそれらＢｉ、Ａｇ、およびＣｕの中で
使用される第２金属材料は導電部材２１に付着し持ち出
されるので、第１金属材料であるＳｎと比べて特に減少
が著しい。Next, with respect to the plating solution in the second plating bath 3, as described above,
The plating solution in the first plating bath 2 adheres to the conductive member 21 and mixes with the plating solution in the second plating bath 3. At this time, the second
In the plating solution in the plating bath 3, Sn as the first metal material adheres to the conductive member 21 and is brought in. But B
The second metal material used in i, Ag, and Cu is not brought. Further, the second metal material used in Bi, Ag, and Cu is deposited on the conductive member 21 as an alloy with Sn, and is also substituted and deposited on the anode. In addition, since the second metal material used in Bi, Ag, and Cu adheres to the conductive member 21 and is taken out, the decrease is particularly remarkable as compared with Sn as the first metal material.

【００２５】一方、一般的にメッキにおいては、電流密
度、メッキ時間およびメッキ液濃度によりメッキ膜の厚
さおよびメッキ膜組成は制御されるため、電流密度、メ
ッキ時間およびメッキ濃度を一定に保つことにより、メ
ッキ膜厚およびメッキ膜組成の管理を行える。このこと
により、メッキ膜に析出される金属材料の量あるいはメ
ッキ液濃度が管理され、析出による金属材料の減少がみ
られる場合は補充を行えば良い。第１メッキ浴槽２およ
び第２メッキ浴槽３のメッキ液の金属材料は、上記した
様に、アノードに置換析出および導電部材２１による持
ち出しによる減少もある。しかし、第１メッキ浴槽２お
よび第２メッキ浴槽３のアノードが純度、例えば９９．
９％以上のＳｎで形成されているので、メッキ液の第１
金属材料であるＳｎは、主にアノードの溶解により補わ
れる他、定期的な分析により必要に応じて溶液補充され
る。On the other hand, in plating, in general, the current density, the plating time and the plating solution control the thickness of the plating film and the plating film composition, so that the current density, the plating time and the plating concentration must be kept constant. Thereby, the plating film thickness and the plating film composition can be managed. Thus, the amount of the metal material deposited on the plating film or the concentration of the plating solution is controlled, and if the metal material is reduced by the deposition, replenishment may be performed. As described above, the metal material of the plating solution in the first plating bath 2 and the second plating bath 3 may be reduced due to substitution precipitation on the anode and removal by the conductive member 21. However, the anode of the first plating bath 2 and the second plating bath 3 has a purity, for example, 99.
Since it is formed of 9% or more of Sn, the first plating solution
Sn, which is a metal material, is mainly supplemented by dissolving the anode, and is replenished as necessary by periodic analysis.

【００２６】例えば、Ｓｎが１００（重量％）のメッキ
液の濃度管理を行う場合、各々の液濃度としては、Ｓｎ
2+濃度が３０〜６０（ｇ／Ｌ）、遊離酸濃度が１２０〜
１６０（ｇ／Ｌ）、添加剤濃度が２０〜５０（ｍｌ／
Ｌ）の間にメッキ液の濃度が保たれるようにＳｎの管理
をする。しかし、上記したように、第１メッキ浴槽２の
管理では、Ｓｎはアノード溶解があるため、第２メッキ
浴槽３の管理ほど頻度を必要としない。For example, when controlling the concentration of a plating solution having a Sn content of 100 (% by weight), the concentration of each
2+ concentration of 30-60 (g / L), free acid concentration of 120-
160 (g / L), additive concentration 20-50 (ml / L
Sn is controlled so that the concentration of the plating solution is maintained during L). However, as described above, in the management of the first plating bath 2, since Sn dissolves in the anode, the frequency is not required as much as the management of the second plating bath 3.

【００２７】第２メッキ浴槽３のメッキ液では、第１金
属材料であるＳｎは前述された様にアノードの溶解で補
充されるので、Ｓｎより減少の著しいＢｉ、Ａｇ、およ
びＣｕの中から選ばれる第２金属材料の濃度を主に管理
しておけば良い。In the plating solution of the second plating bath 3, Sn as the first metal material is replenished by dissolving the anode as described above, so that it is selected from Bi, Ag, and Cu, which are much smaller than Sn. The concentration of the second metal material may be mainly controlled.

【００２８】例えば、Ｓｎ：Ｂｉ＝９７（重量％）：３
（重量％）のメッキ液の濃度管理を行う場合、各々の液
濃度としては、Ｓｎ2+濃度が５０〜６０（ｇ／Ｌ）、Ｂ
ｉ3+濃度が３．０〜４．２（ｇ／Ｌ）、遊離酸濃度が１
２０〜１６０（ｇ／Ｌ）、添加剤濃度が２０〜４０（ｍ
ｌ／Ｌ）の間にメッキ液の濃度が保たれるようにＢｉの
管理をする。For example, Sn: Bi = 97 (% by weight): 3
(% By weight), when the concentration of the plating solution is controlled, the Sn 2+ concentration is 50 to 60 (g / L),
i 3+ concentration of 3.0 to 4.2 (g / L), free acid concentration of 1
20 to 160 (g / L), and the additive concentration is 20 to 40 (m
1 / L) is controlled so that the concentration of the plating solution is maintained.

【００２９】上記した様に、ライン作業による作業速度
の一定化、かつ、第１メッキ浴槽２および第２メッキ浴
槽３における電流密度を一定に保つことができるため、
第２メッキ浴槽３の第２金属材料であるＢｉ、Ａｇ、お
よびＣｕの濃度管理も容易になる。つまり、第２メッキ
浴槽３では、Ｂｉ、Ａｇ、およびＣｕの第２金属材料を
定期的に補充することで簡単に濃度管理が行えるように
なる。この結果、第２メッキ浴槽３のメッキ液の金属材
料の濃度を一定に保つことができ、第２メッキ膜２３の
膜厚およびメッキ膜組成を均一にすることができる。As described above, the working speed can be made constant by the line work, and the current density in the first plating bath 2 and the second plating bath 3 can be kept constant.
Concentration control of Bi, Ag, and Cu, which are the second metal materials of the second plating bath 3, is also facilitated. That is, in the second plating bath 3, the concentration can be easily controlled by periodically replenishing the second metal material of Bi, Ag, and Cu. As a result, the concentration of the metal material of the plating solution in the second plating bath 3 can be kept constant, and the thickness and the composition of the plating film of the second plating film 23 can be made uniform.

【００３０】つまり、このメッキ方法において、第１メ
ッキ浴槽２および第２メッキ浴槽３における電流密度を
最適電流密度に設定することによって、金属析出粒径の
均一化および２層における膜厚比率のばらつきを抑える
ことが出来る。このことにより、ライン作業による作業
速度の一定化かつ一定電流密度下におけるメッキ方法に
おいては、メッキ膜厚ｔ1、ｔ2が、ｔ1＞ｔ2の関係を満
足するとき、導電部材２１が第１メッキ液内を移動する
距離をＤ1、導電部材２１が第２メッキ液内を移動する
距離をＤ2としたとき、Ｄ1、Ｄ2は、Ｄ1＞Ｄ2の関係が
成り立つことが明らかである。That is, in this plating method, the current density in the first plating bath 2 and the second plating bath 3 is set to the optimum current density, so that the metal deposition particle size is made uniform and the film thickness ratio in the two layers is varied. Can be suppressed. Accordingly, in the plating method in which the work speed is constant and the current density is constant under the line current, when the plating film thicknesses t 1 and t 2 satisfy the relationship of t 1 > t 2 , the conductive member 21 is moved to the second position. Assuming that D 1 is the distance traveled in the plating solution and D 2 is the distance that the conductive member 21 travels in the second plating solution, D 1 and D 2 may satisfy the relationship of D 1 > D 2. it is obvious.

【００３１】更に、図２は第１メッキ浴槽２と第２メッ
キ浴槽３の関係を示している。上記した様に、メッキ膜
厚ｔ1、ｔ2が、ｔ1＞ｔ2の関係を満足するとき、第１メ
ッキ浴槽の作業方向の長さＺ1、第２メッキ浴槽の作業
方向の長さＺ2としたとき、同じ断面積（Ｘ1×Ｙ1＝Ｘ2
×Ｙ2）であれば、Ｚ1、Ｚ2は、Ｚ1＞Ｚ2の関係が成立
する。よって、図２からも明らかのように、第１メッキ
液の液量をＶ1（＝Ｘ1×Ｙ1×Ｚ1）、第２メッキ液の液
量をＶ2（＝Ｘ2×Ｙ2×Ｚ2）としたとき、Ｖ1、Ｖ2は、
Ｖ1＞Ｖ2の関係が成り立つことが明らかになる。FIG. 2 shows the relationship between the first plating bath 2 and the second plating bath 3. As described above, when the plating film thicknesses t 1 and t 2 satisfy the relationship of t 1 > t 2 , the length Z 1 of the first plating bath in the working direction and the length of the second plating bath in the working direction. When Z 2 , the same cross-sectional area (X 1 × Y 1 = X 2
× Y 2 ), Z 1 and Z 2 satisfy the relationship of Z 1 > Z 2 . Therefore, as is clear from FIG. 2, the amount of the first plating solution is V 1 (= X 1 × Y 1 × Z 1 ), and the amount of the second plating solution is V 2 (= X 2 × Y 2). × Z 2 ), V 1 and V 2 are:
It becomes clear that the relationship of V 1 > V 2 holds.

【００３２】つまり、第２メッキ浴槽３のメッキ液の液
量において、第２メッキ浴槽３のメッキ液の液量を大幅
に減少させることできる。つまり、第２メッキ浴槽３の
メッキ液内では、第１金属材料であるＳｎより高価なＢ
ｉ、Ａｇ、およびＣｕの中で使用されている第２金属材
料の使用量も大幅に減少することができ、コスト低減を
実現することができる。That is, the amount of the plating solution in the second plating bath 3 can be greatly reduced in the amount of the plating solution in the second plating bath 3. That is, in the plating solution of the second plating bath 3, B, which is more expensive than Sn as the first metal material, is used.
The amount of the second metal material used in i, Ag, and Cu can also be significantly reduced, and cost reduction can be realized.

【００３３】また、本発明の他の実施形態について以下
に述べる。Further, another embodiment of the present invention will be described below.

【００３４】本発明では、第１メッキ浴槽２のメッキ液
および第２メッキ浴槽３のメッキ液では、それぞれの金
属材料の組成比率は異なるが、液構成は同一である。そ
のため、導電部材２１を第１メッキ浴槽２のメッキ液に
浸漬して第１メッキ膜２２を施した後、連続して第２メ
ッキ浴槽３のメッキ液に浸漬して第２メッキ膜２３とを
施すことができることに特徴を有する。そして、実施形
態に関しては、上記した方法と同様である。In the present invention, the plating solution in the first plating bath 2 and the plating solution in the second plating bath 3 have different composition ratios of the respective metal materials, but have the same liquid composition. Therefore, after the conductive member 21 is immersed in the plating solution of the first plating bath 2 to form the first plating film 22, the conductive member 21 is continuously immersed in the plating solution of the second plating bath 3 to form the second plating film 23. The feature is that it can be applied. The embodiment is the same as the method described above.

【００３５】例えば、本発明ではＳｎ―Ｂｉ液がある。
ここでは、第１メッキ浴槽２のメッキ液内には、数％程
度のＢｉが含まれている。このことにより、第１メッキ
膜２２の表面では、ウイスカー（針状結晶）が顕著に抑
制される。また、このメッキ液の濃度管理方法として
は、前述した方法と同様に、Ｂｉの管理をする。For example, in the present invention, there is a Sn-Bi liquid.
Here, the plating solution in the first plating bath 2 contains about several% of Bi. Thus, whiskers (needle-shaped crystals) are significantly suppressed on the surface of the first plating film 22. As a method for controlling the concentration of the plating solution, Bi is controlled in the same manner as the method described above.

【００３６】つまり、第１メッキ浴槽２のメッキ液で
は、第２メッキ浴槽３のメッキ液で使用されるＳｎ以外
の金属材料、Ｂｉ、Ａｇ、およびＣｕの中から選ばれる
少なくとも１種類の金属材料を数％程度含む。このこと
により、第１メッキ膜２２の表面のウイスカー（針状結
晶）を顕著に抑制することができる。That is, in the plating solution of the first plating bath 2, at least one metal material selected from Bi, Ag and Cu other than Sn used in the plating solution of the second plating bath 3. About several percent. Thus, whiskers (needle-shaped crystals) on the surface of the first plating film 22 can be significantly suppressed.

【００３７】[0037]

【発明の効果】以上の説明で明らかなように、本発明の
メッキ方法には以下のような効果がみられる。As is clear from the above description, the plating method of the present invention has the following effects.

【００３８】第１に、第１メッキ液および第２メッキ液
の構成は、それぞれのメッキ液を構成する第１および第
２金属材料およびそれらを溶かす酸性溶剤を除いて同一
の液構成である。そのため、第１のメッキ液が第２のメ
ッキ液内に混入しても液構成が乱されず、導電部材に異
なる金属材料のまたは同一金属材料であるが金属材料の
組成比率が異なる２層のメッキ膜を連続して施すことが
できる。この結果、第１メッキ膜と第２メッキ膜との間
の作業である水洗用浴槽による洗浄を省略することがで
き、作業工程および作業時間の短縮が図れる。First, the constitutions of the first plating solution and the second plating solution are the same except for the first and second metal materials constituting the respective plating solutions and the acidic solvent for dissolving them. Therefore, even if the first plating solution is mixed into the second plating solution, the composition of the solution is not disturbed, and the conductive member is made of two layers of different metal materials or the same metal material but different composition ratios of the metal materials. The plating film can be continuously applied. As a result, the washing between the first plating film and the second plating film, which is a washing bath, can be omitted, and the working process and the working time can be shortened.

【００３９】第２に、第１メッキ液および第２メッキ液
内に含まれる第１および第２金属材料の管理において、
まず第１メッキ液および第２メッキ液の構成は、それぞ
れのメッキ液を構成する第１および第２金属材料および
それらを溶かす酸性溶剤を除いて同一の液構成である。
それぞれのメッキ液の第１金属材料であるＳｎは、主に
アノードの溶解により濃度調整することができる。その
ため、第２メッキ液では、Ｂｉ、Ａｇ、およびＣｕの中
で使用される第２金属材料の濃度管理を定期的に行えば
良く、メッキ液の濃度管理が容易になる。Second, in managing the first and second metal materials contained in the first plating solution and the second plating solution,
First, the first plating solution and the second plating solution have the same composition except for the first and second metal materials constituting the respective plating solutions and the acidic solvent for dissolving them.
The concentration of Sn, which is the first metal material of each plating solution, can be adjusted mainly by dissolving the anode. Therefore, in the second plating solution, the concentration of the second metal material used in Bi, Ag, and Cu may be periodically controlled, and the concentration of the plating solution may be easily controlled.

【００４０】第３に、自動メッキ装置を用いることによ
る作業速度の一定化、電流密度の一定化および第１メッ
キ液と第２メッキ液との第１および第２金属材料および
それらを溶かす酸性溶剤を除いた溶液を同一の液構成に
した。そのことにより、第２メッキ膜が第１メッキ膜よ
りも大幅に薄いので導電部材が第２メッキ液に浸漬する
時間を短くできる。この結果、第２メッキ浴槽の液量を
大幅に減少することができる。このことにより、第２メ
ッキ液に用いられる第２金属材料であるＢｉ、Ａｇ、お
よびＣｕの使用量も大幅に減少させることができ、その
結果、コスト低減を実現することができる。Third, by using an automatic plating apparatus, the working speed is made constant, the current density is made constant, the first and second metal materials of the first plating solution and the second plating solution, and the acidic solvent for dissolving them. The solutions except for were made to have the same composition. Thereby, since the second plating film is much thinner than the first plating film, the time during which the conductive member is immersed in the second plating solution can be shortened. As a result, the amount of liquid in the second plating bath can be significantly reduced. As a result, the amount of Bi, Ag, and Cu used as the second metal material used in the second plating solution can be significantly reduced, and as a result, cost reduction can be realized.

【００４１】第４に、第１メッキ浴槽のメッキ液では、
第２メッキ浴槽のメッキ液で使用される第１金属材料の
Ｓｎ以外、Ｂｉ、Ａｇ、およびＣｕの中から選ばれる少
なくとも１種類の第２金属材料を数％程度含む。このこ
とにより、第１メッキ膜の表面のウイスカー（針状結
晶）を顕著に抑制することができる。Fourth, in the plating solution of the first plating bath,
In addition to Sn as the first metal material used in the plating solution of the second plating bath, it contains at least one kind of second metal material selected from Bi, Ag, and Cu by about several percent. Thus, whiskers (needle-shaped crystals) on the surface of the first plating film can be significantly suppressed.

【００４２】第５に、以上のメッキ方法を用いたリード
および半導体装置において、使用するメッキ液が鉛を含
んでいないため、人体や環境に悪影響を与えることはな
い。その上で、第１メッキ液と第２メッキ液との金属材
料およびそれらを溶かす酸性溶剤を除いた溶液を同一の
液構成にしたことまたは第１メッキ液と第２メッキ液と
の金属材料の組成比率は異なるが金属材料を同一にした
ことによりメッキ品質の向上へとつながる。Fifth, in a lead and a semiconductor device using the above plating method, since the plating solution used does not contain lead, there is no adverse effect on the human body and the environment. In addition, the first plating solution and the second plating solution were made to have the same composition as the solution except for the metal material of the first plating solution and the acidic solvent for dissolving them, or the metal material of the first plating solution and the second plating solution was not mixed. Although the composition ratio is different, the same metal material leads to an improvement in plating quality.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明のメッキ方法に用いる半田メッキ装置を
説明する図である。FIG. 1 is a diagram illustrating a solder plating apparatus used for a plating method according to the present invention.

【図２】本発明のメッキ方法に用いる第１メッキ浴槽と
第２メッキ浴槽を説明する図である。FIG. 2 is a diagram illustrating a first plating bath and a second plating bath used in the plating method of the present invention.

【図３】本発明および従来の２層メッキを施した導電部
材を説明する図である。FIG. 3 is a diagram illustrating a conductive member according to the present invention and a conventional two-layer plating.

【図４】本発明および従来の自動メッキ装置全体のレイ
アウトを説明する図である。FIG. 4 is a diagram illustrating the layout of the present invention and the entirety of a conventional automatic plating apparatus.

【図５】従来の半田メッキ装置部分のレイアウトを説明
する図である。FIG. 5 is a diagram for explaining a layout of a conventional solder plating apparatus.

───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 4K023 AA17 AB34 CB05 CB08 DA06 4K024 AA07 AA21 AB02 BA02 BA09 BB09 BB10 BB13 CA02 CB01 DA06 GA16 5F067 DC06 DC11 DC18 DC20  ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4K023 AA17 AB34 CB05 CB08 DA06 4K024 AA07 AA21 AB02 BA02 BA09 BB09 BB10 BB13 CA02 CB01 DA06 GA16 5F067 DC06 DC11 DC18 DC20

Claims (7)

【特許請求の範囲】[Claims] 【請求項１】 導電部材を第１メッキ液、第２メッキ液
に順次浸漬して前記導電部材の表面にすべてあるいはほ
とんどすべてを第１金属材料より成る第１メッキ膜と前
記第１金属材料と第２金属材料の合金より成る第２メッ
キ膜とを重ねて形成するメッキ方法において、 前記第１メッキ液および前記第２メッキ液は、前記第１
および第２金属材料およびそれらを溶かす溶剤を除いて
実質的に同一の液構成であることを特徴とするメッキ方
法。1. A first plating film made of a first metal material and a first plating film composed entirely or almost entirely of a first metal material on a surface of the conductive member by sequentially immersing a conductive member in a first plating solution and a second plating solution. In a plating method in which a second plating film made of an alloy of a second metal material is formed so as to overlap with the second plating film, the first plating solution and the second plating solution include
A plating method having substantially the same liquid composition except for a second metal material and a solvent for dissolving them. 【請求項２】 前記第１メッキ液を構成する前記第１金
属材料は、Ｓｎであり、前記第２メッキ液を構成する前
記第１金属材料はＳｎであり、前記第２金属材料はＢ
ｉ、Ａｇ、およびＣｕの中から選ばれる少なくとも１種
類であることを特徴とする請求項１に記載したメッキ方
法。2. The first metal material forming the first plating solution is Sn, the first metal material forming the second plating solution is Sn, and the second metal material is B
The plating method according to claim 1, wherein the plating method is at least one selected from i, Ag, and Cu. 【請求項３】 前記第１メッキ液および前記第２メッキ
液は前記第１および第２金属材料およびそれらを溶かす
溶剤を除き、有機酸、溶剤、添加剤および純水で構成さ
れることを特徴とする請求項１または請求項２に記載し
たメッキ方法。3. The first plating solution and the second plating solution are composed of an organic acid, a solvent, an additive, and pure water, except for the first and second metal materials and a solvent for dissolving them. The plating method according to claim 1 or 2, wherein 【請求項４】 前記第１メッキ液および前記第２メッキ
液を構成する前記有機酸にはメタンスルホン酸またはプ
ロパノールスルホン酸が含まれ、前記溶剤にはイソプロ
ピルアルコールが含まれることを特徴とする請求項３に
記載したメッキ方法。4. The method according to claim 1, wherein the organic acids constituting the first plating solution and the second plating solution include methanesulfonic acid or propanolsulfonic acid, and the solvent includes isopropyl alcohol. Item 3. The plating method according to Item 3. 【請求項５】 前記第２メッキ液ではＢｉ、Ａｇ、およ
びＣｕの中で使用した前記第２金属材料を濃度管理する
ことを特徴とする請求項１から請求項４のいずれかに記
載したメッキ方法。5. The plating method according to claim 1, wherein the concentration of the second metal material used in Bi, Ag, and Cu is controlled in the second plating solution. Method. 【請求項６】 前記導電部材を前記第１メッキ液に浸漬
して前記第１メッキ膜を形成した後、他の水溶液に前記
導電部材を浸すことなく、前記導電部材を前記第２メッ
キ液に浸漬して前記第２メッキ膜を施すことを特徴とす
る請求項１から請求項５のいずれかに記載したメッキ方
法。6. After immersing the conductive member in the first plating solution to form the first plating film, the conductive member is immersed in the second plating solution without immersing the conductive member in another aqueous solution. The plating method according to any one of claims 1 to 5, wherein the second plating film is applied by immersion. 【請求項７】 前記第１メッキ液による前記導電部材に
施されるメッキ膜厚ｔ1、前記第２メッキ液による前記
導電部材に施されるメッキ膜厚ｔ2とした時、ｔ1、ｔ2
は、ｔ1＞ｔ2の関係を満足し、かつ前記導電部材が前記
第１メッキ液内を移動する距離をＤ1、前記導電部材が
前記第２メッキ液内を移動する距離をＤ2としたとき、
Ｄ1、Ｄ2は、Ｄ1＞Ｄ2の関係を満足することを特徴とす
る請求項１から請求項６のいずれかに記載したメッキ方
法。7. A film thickness t 1 applied to the conductive member by the first plating solution and a film thickness t 2 applied to the conductive member by the second plating solution, t 1 , t Two
Satisfies the relationship of t 1 > t 2 , and the distance that the conductive member moves in the first plating solution is D 1 , and the distance that the conductive member moves in the second plating solution is D 2 . When
7. The plating method according to claim 1 , wherein D 1 and D 2 satisfy a relationship of D 1 > D 2 .
JP2000052533A 2000-02-28 2000-02-28 Plating method Expired - Fee Related JP3523556B2 (en)

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KR1020010009848A KR100695372B1 (en) 2000-02-28 2001-02-27 Plating method
CNB011123761A CN1307327C (en) 2000-02-28 2001-02-28 Electroplating method

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003050328A1 (en) * 2000-03-29 2003-06-19 Sanyo Electric Co., Ltd. Plating apparatus, plating method, and method for manufacturing semiconductor device
US7772043B2 (en) 2001-12-12 2010-08-10 Sanyo Electric Co., Ltd. Plating apparatus, plating method and manufacturing method for semiconductor device
KR102170830B1 (en) * 2020-07-01 2020-10-27 팽명호 Surface treatment method using lead-free or lead solder

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101978562B (en) * 2008-03-19 2013-04-03 古河电气工业株式会社 Metallic material for connector and process for producing the metallic material for connector
CN105525332B (en) * 2014-10-24 2018-11-09 中国科学院苏州纳米技术与纳米仿生研究所 A kind of method and encapsulation chip reducing solder bonding thermal stress

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JPS58181894A (en) * 1982-04-14 1983-10-24 Nippon Kokan Kk <Nkk> Preparation of steel plate electroplated with composite fe-zn alloy layers with different kind of compositions
JPS62202094A (en) * 1986-02-28 1987-09-05 Sumitomo Metal Ind Ltd Production of gradient plating
JP3330729B2 (en) * 1994-05-06 2002-09-30 新日本製鐵株式会社 Method for producing multilayer plated steel sheet and method for producing heat diffusion type alloy plated steel sheet using multilayer plated steel sheet
JPH10229152A (en) * 1996-12-10 1998-08-25 Furukawa Electric Co Ltd:The Lead material for electronic component, lead using the same and semiconductor device
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CN1064722C (en) * 1998-12-25 2001-04-18 清华大学 Brightening and leveling agent for lead and tin methylsulfonate electroplating bath
JP3523555B2 (en) * 2000-02-28 2004-04-26 古河電気工業株式会社 Plating equipment

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003050328A1 (en) * 2000-03-29 2003-06-19 Sanyo Electric Co., Ltd. Plating apparatus, plating method, and method for manufacturing semiconductor device
US7772043B2 (en) 2001-12-12 2010-08-10 Sanyo Electric Co., Ltd. Plating apparatus, plating method and manufacturing method for semiconductor device
KR102170830B1 (en) * 2020-07-01 2020-10-27 팽명호 Surface treatment method using lead-free or lead solder

Also Published As

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KR20010085639A (en) 2001-09-07
CN1307327C (en) 2007-03-28
JP3523556B2 (en) 2004-04-26
TW506100B (en) 2002-10-11
KR100695372B1 (en) 2007-03-15

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