JP3523555B2 - Plating equipment - Google Patents

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a plating apparatus,
In particular, the present invention relates to a plating apparatus that continuously forms a plating film of a metal material that is lead-free and has good soldering characteristics.

[0002]

2. Description of the Related Art Lead material obtained by coating the surface of a conductive member such as Cu simple substance, Cu alloy or Fe-Ni alloy with a plating layer of Sn simple substance or Sn alloy is Cu simple substance or Cu.
It has excellent electrical conductivity and mechanical strength that alloys possess.
In addition, the lead material is a high-performance conductor having both the corrosion resistance and the good solderability that are contained in Sn simple substance or Sn alloy. Therefore, they are widely used in the fields of electric / electronic devices such as various terminals, connectors, and leads, and in the field of power cables.

Further, when a semiconductor chip is mounted on a circuit board, the outer lead portion of the semiconductor chip is subjected to hot dipping or electroplating using an Sn alloy to improve the solderability of the outer lead portion. Is being done. A typical example of such Sn alloy is solder (S
Since it is an n-Pb alloy) and has good solderability and corrosion resistance, it is widely used as an industrial plating solution for electrical and electronic industrial parts such as connectors and lead frames.

However, Pb used for soldering
Hazardous substances have been pointed out to be harmful because they may adversely affect the human body, and there is a worldwide movement to regulate the use of Pb. For example, when electronic machinery discarded outdoors is exposed to acid rain, Pb begins to melt from the solder (Sn-Pb alloy) used inside the machine and the solder plating applied to the surface of electronic components. , This will pollute groundwater and rivers. In order to prevent environmental pollution, it is best to use Sn alloy containing no Pb. Therefore, a new plating solution containing no Pb, which replaces the conventional Sn-Pb plating solution, is being developed. Then, a plating solution containing Sn as a main component which does not contain Pb, for example, Sn—Bi system, Sn—Ag system, Sn—C
u-based plating solutions have been developed and are being replaced.

FIG. 3 is a sectional view showing the basic structure of the lead material. For example, the conductive member 21 is made of Cu, a Cu-based alloy containing Cu as a main component, or Fe-N containing Fe-Ni as a main component.
It is composed of an i-based alloy. The surfaces of these conductive members 21 are coated with two layers of plating films of different metal materials. For example, Sn first plating film 22 and Sn-
The second Bi plating film 23 is formed in this order.
Here, when the thickness of the first plating film 22 is t ₁ and the thickness of the second plating film 3 is t ₂ , t ₁ is about 3 to 15 μm, t ₂
Is about 1 to 5 μm, and t ₂ / t ₁ is set to about 0.1 to 0.5, in terms of cost, solderability and heat resistance,
Further, it is known that it has favorable characteristics in terms of solder joint strength and welding strength of a welded portion with an aluminum wire and the like, and can improve performance as a lead material, which is known to be suitable.

FIG. 4 is an apparatus for installing a conductive member to be plated on a work line, and FIG. 6 is a layout of the automatic plating apparatus as a whole. First, the semiconductor chip (conductive member) 32 is set on the auxiliary plating rack 31 and set on the work line. In the alkaline electrolytic cleaning bath 51, organic contaminants such as fats and oils that hinder the adhesion and solderability of the solder plating film on the surface of the conductive member 21 are removed. Next, after being washed in the washing bath 52, a chemical etching process (basically a process utilizing an oxidation-reduction reaction) is performed in the chemical etching bath 53,
The surface of the conductive member 21 which has an uneven surface due to the presence of grain boundaries and inclusions is made uniform.

Next, after being washed in the washing bath 54, the oxide film adhered in the washing bath 54 is removed in the acid activation bath 55. Next, after being washed in the washing bath 56, plating is performed in the solder plating device 57. Since the solder plating solution is strongly acidic, the surface after plating is acidic. On such a surface, the film discolors over time and the solderability deteriorates. Therefore, in the washing bath 58 and the neutralization treatment bath 59, the acid remaining on the plating surface is neutralized and the adsorbed organic substances are removed. After that, the conductive member that has been washed in the water washing bath 60 and the hot water bath 61 and dried in the drying device 62 is dried.

FIG. 7 is a detailed layout of a portion to be plated in the conventional plating apparatus 57. In this plating process, conducted to Purede _Lee-up tub 571 member 2
1 is immersed to remove the hydroxide film on the surface, and the first plating bath 5
After immersing in the plating solution 72 and applying the first plating film 22,
The conductive member 21 is mixed with the plating solution in the first plating bath 572 and the second plating solution.
The first plating solution is removed by immersing it in pure water in a washing tub 573 provided between the plating solution in the plating tub 574 and the plating solution in the second plating tub 574. The second plating film 23 is applied. Finally, the plating surface is washed in the washing bath 575.

In the above plating method, the first plating film 2
The plating liquid in the first plating bath 572 for applying 2 and the plating liquid in the second plating bath 574 for applying the second plating film 23 are the same liquids except for the metal materials constituting the respective plating liquids and the acidic solvent that dissolves them. It was not a composition. For example, when the first plating film 22 is made of Sn alone and the second plating film 23 is made of Sn—Bi alloy, the first plating bath 5
In the configuration of the plating liquid of 72 and the second plating bath 574, the same material is used for the organic acid, the solvent, and the pure water. However, regarding the additives, the former generally uses the additive for the solder plating liquid, and the latter generally uses the additive.
Generally, an additive for Sn-Bi plating solution is used.

Such a plating apparatus is disclosed in Japanese Unexamined Patent Publication No. 10-22.
No. 9152.

[0011]

First, as described above, the plating solution in the first plating bath 572 for applying the first plating film 22 and the plating solution in the second plating bath 574 for applying the second plating film 23 are different from each other. The liquid composition is not the same except for the metal materials that make up the plating solution and the solvent that dissolves them.
Therefore, the first plating bath 57 is prevented from being directly brought into the plating liquid of the second plating bath 574 by adhering the plating liquid of the first plating bath 572 to the conductive member 21.
A water washing bath 573 is provided between the second plating bath and the second plating bath 574. Then, using the pure water of the washing bath 573, the first plating bath 572
Had to remove the plating solution. Therefore,
In the conventional plating method, the washing bath 573 is indispensable, and there is a problem that an extra step is required.

In addition, in the plating solution of the second plating bath 574 for applying the second plating film 23, the conductive member 21 on which the first plating film 22 is applied is washed in the washing bath 573 and then the second plating bath 574. When it is dipped in the plating solution, the pure water in the washing bath 573 is mixed. Therefore, since the plating solution in the second plating bath 574 is diluted, it is necessary to manage the composition and concentration of the plating solution in the second plating bath 574, and the process management is complicated.

Further, the metal material contained in the plating solution in the first plating bath 572 and the plating solution in the second plating bath 574 is plated on the conductive member 21 and also deposited on the anode by substitution. However, regarding Bi, Ag, and Cu, which are the second metal materials constituting the second plating solution,
The amount of replenishment is significantly increased because the substitution and deposition are significantly deposited on the anode. On the other hand, since metal materials (especially Bi, Ag and Cu) are expensive, there is also a problem that causes a high cost.

Further, regarding the plating solution in the second plating bath 574, when the used plating solution is stopped for a short time, the second metal materials Bi, Ag and Cu are replaced and deposited on the anode and reduced. Therefore, the second plating bath 5
When the plating solution of 74 was not used, it was stored in another bath. At that time, there was a problem that the amount of the plating solution in the second plating bath 574 was large and it took a long time to store the plating solution, resulting in poor work efficiency.

[0015]

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems of the prior art.
In a plating apparatus for applying a first plating film 22 and a second plating film 23, which are two layers of different metal materials or the same metal material but different composition ratios of metal materials,
An object of the present invention is to provide a plating apparatus that enables a plating method that can shorten the work process and simplify the concentration control.

In order to achieve the above-mentioned object, in the present invention, the composition contained in the plating solution of the first plating bath and the plating solution of the second plating bath is the first and second metal materials and the acidic solvent that dissolves them. It is characterized in that the liquid composition is substantially the same except for. Specifically, the first and second metal materials contained in the plating solution in the first plating bath and the plating solution in the second plating bath and organic acids excluding the acidic solvent that dissolves them, the solvent, the additive, and the pure water are substantially included. The characteristic is that they have the same liquid composition.

[0017]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows a layout of a portion to be plated for carrying out the plating apparatus according to the present invention, and a solder plating apparatus 57 of the whole plating apparatus shown in FIG. Applicable

In FIG. 1, the automatic plating apparatus is a
Bath tub 1, first plating bath 2, second plating bath 3, water
It is composed of a washing bath 4. In predip bathtub 1
Is a bath for washing water in front of the conductive member 21 (see FIG. 3).56
(Figure6Remove the oxide film that was attached when cleaning with
Then, the surface of the conductive member 21 is activated. 1st plating
In the bath 2, the conductive member 21 is provided with the first plating film 22,
Then, in the second plating bath 3, the second member is attached to the conductive member 21.
The cleaning film 23 is applied. Here, regarding the plating film thickness,
As usual, the thickness of the first plating film 22 is t₁, Second plating film
23 thickness t_TwoAnd then t₁Is about 3 to 15 μm,
t_TwoIs about 1 to 5 μm, t_Two/ T₁Is about 0.1 to 0.5
To be plated. The structure of the lead material is as shown in Fig. 3.
Since they are the same, the symbols are common.

In the present invention, the first and second metal materials contained in the plating solution of the first plating bath 2 and the plating solution of the second plating bath 3 and the solution excluding the acidic solvent for dissolving them are made into the same solution composition. did. As a result, the conductive member 21 is immersed in the plating solution in the first plating bath 2 to form the first plating film 22, and then continuously immersed in the plating solution in the second plating bath 3 to form the second plating film 23. It is characterized in that it can be applied.

That is, as the composition of the plating solution in the first plating bath 2, the first metal material is Sn, and the solution excluding this metal material and the acidic solvent that dissolves it is an organic acid, a solvent, an additive and pure water. It is composed of. For example, the organic acid includes methane sulfonic acid or propanol sulfonic acid, and the solvent includes isopropyl alcohol. The composition of the plating solution in the second plating bath 3 is at least one kind of second metal material selected from Bi, Ag, and Cu and the first metal material which is the first metal material.
A metal material containing Sn solution of the same kind as the cleaning liquid ,
The solution obtained by removing these metallic materials and the acidic solvent that dissolves them is the same organic acid as the first plating solution , the first plating solution.
The same kind of solvent, the same kind of additive as the first plating solution, and pure water. For example, similar to the first plating bath 2, the organic acid contains methanesulfonic acid or propanolsulfonic acid, and the solvent contains isopropyl alcohol.

Therefore, in this plating apparatus, the plating solution in the first plating bath 2 is attached to the conductive member 21 and brought into the plating solution in the second plating bath 3. As a result, even if two plating solutions are mixed, the first and second plating solutions
The composition of the plating solution in the second plating bath 3 is not disturbed because the composition is the same except for the metallic materials and the acidic solvent that dissolves them.

Generally, when forming a plating solution,
The metal material is used by dissolving it in an acidic solvent. However, since the amount of the acidic solvent is extremely small compared to the amount of the plating solution, even if it is contained in a small amount, it does not affect the composition of the plating solution.

Therefore, the conductive member 21 is connected to the first plating bath 2
After the first plating film 22 is applied by immersing it in the plating solution, the conductive member 21 can be continuously immersed in the plating solution in the second plating bath 3 to apply the second plating film 23. Therefore, it is possible to omit the conventional washing bath 573 provided between the first plating bath 572 (see FIG. 7) and the second plating bath 574. This makes it possible to omit the washing in the washing bath after applying the first plating film 22, and the working process and working time can be shortened.

Next, regarding the plating solution in the second plating bath 3, as described above, in the plating operation step,
The plating liquid in the first plating bath 2 adheres to the conductive member 21 and mixes with the plating liquid in the second plating bath 3. At this time, the second
In the plating solution in the plating bath 3, Sn, which is the first metal material, is brought in by adhering to the conductive member 21. But B
The second metallic material used in i, Ag, and Cu is not brought in. Further, the second metal material used in Bi, Ag, and Cu is deposited on the conductive member 21 as an alloy with Sn, and is also deposited by substitution on the anode. Further, in addition to that, the second metal material used in Bi, Ag, and Cu adheres to the conductive member 21 and is taken out, so that the decrease is particularly remarkable as compared with Sn which is the first metal material.

On the other hand, generally, in plating, since the thickness of the plating film and the composition of the plating film are controlled by the current density, the plating time and the concentration of the plating solution, the current density, the plating time and the plating concentration should be kept constant. This makes it possible to control the plating film thickness and the plating film composition. As a result, the amount of the metal material deposited on the plating film or the concentration of the plating solution is controlled, and if the metal material is reduced due to the deposition, supplementation may be performed. As described above, the metal material of the plating solution in the first plating bath 2 and the second plating bath 3 may be reduced by displacement deposition on the anode and removal by the conductive member 21. However, the anodes of the first plating bath 2 and the second plating bath 3 have a purity of, for example, 99.
Since it is made of Sn of 9% or more,
Sn, which is a metal material, is mainly supplemented by the dissolution of the anode, and is supplemented with a solution as needed by periodic analysis.

For example, in the case of controlling the concentration of a plating liquid having Sn of 100 (wt%), the concentration of each liquid is Sn.
²⁺ concentration is 30-60 (g / L), free acid concentration is 120-
160 (g / L), additive concentration 20 to 50 (ml /
Sn is controlled so that the concentration of the plating solution is maintained during L). However, as described above, in the management of the first plating bath 2, Sn does not dissolve in the anode, so that the management of the first plating bath 3 does not require as much frequency.

In the plating solution in the second plating bath 3, Sn, which is the first metal material, is replenished by the dissolution of the anode as described above. Therefore, it is selected from Bi, Ag, and Cu, which decrease significantly from Sn. It suffices to mainly control the concentration of the second metal material used.

For example, Sn: Bi = 97 (wt%): 3
When controlling the concentration of the plating liquid (wt%), the Sn ²⁺ concentration is 50 to 60 (g / L), B
i ³⁺ concentration is 3.0 to 4.2 (g / L), free acid concentration is 1
20 to 160 (g / L), the additive concentration is 20 to 40 (m
Bi is controlled so that the concentration of the plating solution is maintained during 1 / L).

That is, as described above, the work speed is kept constant by the line work, and the first plating bath 2 and the second plating bath 2 are used.
Since the current density in the plating bath 3 can be kept constant, Bi, which is the second metal material of the second plating bath 3,
Management of Ag and Cu also becomes easy. That is, in the second plating bath 3, the concentration management can be easily performed by periodically supplementing the second metal material of Bi, Ag, and Cu. As a result, the concentration of the metal material of the plating solution in the second plating bath 3 can be kept constant, and the second plating film 2
The film thickness and the plating film composition of No. 3 can be made uniform.

Further, FIG. 2 shows the relationship between the first plating bath 2 and the second plating bath 3. Here, when the plating film thicknesses t ₁ and t ₂ satisfy the relationship of t ₁ > t ₂ , the length Z ₁ of the first plating bath in the working direction and the length Z _{2 of} the second plating bath in the working direction are set. And the same cross-sectional area (X ₁ × Y ₁ = X ₂ ×
If Y ₂ ), then Z ₁ and Z ₂ satisfy the relationship of Z ₁ > Z ₂ . Therefore, as is clear from FIG. 3, the volume of the first plating bath 2 is L ₁ (= X ₁ × Y ₁ × Z ₁ ), and the volume of the second plating bath 3 is L ₂ (= X ₂ × Y _2). X Z ₂ ), L ₁ ,
L ₂ is, L _1> relationship of L ₂ is true it becomes apparent.

FIG. 5 is a detailed layout of the first plating bath 2 and the second plating bath 3. The first plating bath 2 and the second plating bath 3 are designed so that two anodes can be installed at one location. And
In the first plating bath 2, the installation location on the first starting point side can be adapted to various conditions such as plating film thickness, plating solution concentration or current density. In addition, in each of the plating baths, a precipitate generated during plating and an insoluble impurity generated in the anode 41 are mixed.
Overflow bath 4 attached to each plating bath
In Nos. 2 and 43, those insoluble impurities are taken into the bath using the water flow in the plating bath. Then, the plating liquid taken into the overflow baths 42, 43 is filtered and sent into the plating baths. The bath 44 for storing the plating liquid is a bath for storing and storing the plating liquid when the plating liquid in the second plating bath 3 is not used.

As described above, in this plating apparatus,
By setting the current densities in the first plating bath 2 and the second plating bath 3 to the optimum current densities, it is possible to make the metal deposition grain size uniform and suppress the variation in the film thickness ratio between the two layers. From this, it is preferable to keep the current density constant at the optimum current density. As a plating apparatus under a constant current density, the plating film thicknesses t ₁ and t ₂ are t ₁ >.
When the relationship of t ₂ is satisfied, the plating bath volumes L ₁ , L
_{For 2} , the relationship of L ₁ > L ₂ is established. That is, by significantly reducing the amount of the plating liquid in the second plating bath 3 with respect to the amount of the plating liquid in the second plating bath 3, the first metal material is used in the plating liquid in the second plating bath 3. Some Sn
The amount of the second metal material used in the more expensive Bi, Ag, and Cu can be greatly reduced. Further, the number of anodes used can be reduced with the minimization of the plating bath, and thus the substitutional precipitation in the entire second plating bath 3 can be significantly reduced.
Because of this, expensive Bi, Ag, and Cu
It is possible to reduce the amount of the second metal material used, and to realize cost reduction.

Further, as described above, with respect to the amount of the plating liquid in the second plating bath 3, the amount of the plating liquid in the second plating bath 3 can be greatly reduced. As a result, it is possible to greatly reduce the working time when the plating solution in the second plating bath 3 is taken in and out of the bath 44 that stores the plating solution, and it is possible to greatly improve the working efficiency.

Further, as described above, the number of the anodes used in the plating bath can be reduced by greatly reducing the plating liquid in the second plating bath 3.
This greatly reduces the time and effort required to keep the anode clean. For example, it is possible to suppress the trouble of removing the metal that is deposited by substitution around the anode, and also the trouble of cleaning the anode bag with an acid. By such maintenance work, the amount of dissolution of the anode, that is, Sn is stabilized, and the Sn concentration control in the plating solution is facilitated. Along with this, the liquid composition of the plating liquid or the liquid management can be performed more accurately, and the quality, such as appearance, discoloration, and solderability, can be improved.

Further, in the second plating bath 3, as shown in FIG.
In 5, the length Z of the plating bath in the working direction can be shortened, so that the overflow bath attached to the second plating bath 3 can be installed with the same width as the plating bath. As a result, when plating the conductive member, the water flow for driving the insoluble impurities in the plating bath to the overflow bath and the conductive member are orthogonal to each other.
Therefore, it is possible to suppress the occurrence of uneven thickness of the plating film applied to the conductive member.

Another embodiment of the present invention will be described below.

In the present invention, the plating solution in the first plating bath 2 and the plating solution in the second plating bath 3 have the same composition although the composition ratios of the respective metal materials are different. Therefore, after the conductive member 21 is immersed in the plating solution in the first plating bath 2 to apply the first plating film 22, the conductive member 21 is continuously immersed in the plating solution in the second plating bath 3 to form the second plating film 23. It is characterized in that it can be applied. The embodiment is the same as the method described above.

For example, in the present invention, there is Sn-Bi liquid.
Here, the plating solution in the first plating bath 2 contains about several percent of Bi. As a result, whiskers (needle-shaped crystals) are significantly suppressed on the surface of the first plated film 22. Further, as a method of controlling the concentration of the plating solution, Bi is controlled in the same manner as the method described above.

That is, in the plating liquid of the first plating bath 2, at least one metal material selected from the metal materials other than Sn used in the plating liquid of the second plating bath 3, Bi, Ag, and Cu. About several percent. As a result, whiskers (acicular crystals) on the surface of the first plated film 22 can be significantly suppressed.

[0040]

As is apparent from the above description, the plating apparatus of the present invention has the following effects.

First, the composition of the plating solution in the first plating bath and that in the second plating bath are substantially the same except for the first and second metal materials constituting the respective plating solutions and the acidic solvent that dissolves them. It is a liquid composition of. Therefore, even if the first plating solution is mixed in the second plating solution, the composition of the solution is not disturbed, and two-layer plating of different metal materials or the same metal material but different metal material composition ratios is used for the conductive member. The membrane can be applied continuously. As a result, it is possible to omit the work between the first plating film and the second plating film in the washing bath, and it is possible to shorten the working process and the working time.

Secondly, in the management of the metal material contained in the plating solution of the first plating bath and the plating solution of the second plating bath, first, the composition of the plating solution of the first plating bath and the plating solution of the second plating bath are respectively First component of the plating solution
The liquid composition is the same except for the second metal material and the acidic solvent that dissolves them. Since Sn, which is the first metal material of each plating solution, can be adjusted mainly by dissolving the anode, Bi in the second plating solution,
The concentration control of the second metal material used in Ag and Cu may be performed periodically, which facilitates the concentration control of the plating solution.

Thirdly, the work speed is made constant by using an automatic plating apparatus, the current density is made constant, the first and second metal materials of the first plating solution and the second plating solution, and an acidic solvent for dissolving them. The solution except the above had the same liquid composition. As a result, the second plating film is much thinner than the first plating film, so that the time required for the conductive member to be immersed in the second plating solution can be shortened. As a result, the amount of liquid in the second plating bath can be significantly reduced. As a result, the amounts of the second metal materials Bi, Ag, and Cu used in the second plating solution can be significantly reduced, and as a result, cost reduction can be realized.

Fourthly, since the length of the side of the second plating bath in the working direction can be shortened, the overflow bath can be installed with the same width as the second plating bath. As a result, when plating the conductive member, the water flow for driving the insoluble impurities in the plating bath to the overflow bath and the conductive member are orthogonal to each other. Therefore, it is possible to suppress the occurrence of uneven thickness of the plating film applied to the conductive member.

Fifth, in the plating solution in the first plating bath,
In addition to Sn, which is the first metal material used in the plating solution in the second plating bath, at least one second metal material selected from Bi, Ag, and Cu is contained in an amount of about several percent. As a result, whiskers (acicular crystals) on the surface of the first plated film can be significantly suppressed.

Sixth, in the lead and the semiconductor device using the above plating apparatus, since the plating solution used does not contain lead, there is no adverse effect on the human body or the environment. Then, the first plating liquid and the second plating liquid are made to have the same liquid composition except for the metal material and the acidic solvent that dissolves them, or the metal material of the first plating liquid and the second plating liquid is changed. Although the composition ratios are different, the use of the same metal material leads to improvement in plating quality.

[Brief description of drawings]

FIG. 1 is a diagram illustrating a solder plating apparatus used in the plating apparatus of the present invention.

FIG. 2 is a diagram illustrating a first plating bath and a second plating bath used in the plating apparatus of the present invention.

FIG. 3 is a diagram illustrating a conductive member that is plated with two layers according to the present invention and the related art.

FIG. 4 is a diagram illustrating an apparatus for installing a conductive member for plating according to the present invention and a conventional method on a work line.

FIG. 5 is a diagram illustrating details of a first plating bath and a second plating bath used in the plating apparatus of the present invention.

FIG. 6 is a diagram illustrating the layout of the entire automatic plating apparatus of the present invention and the related art.

FIG. 7 is a diagram illustrating a layout of a conventional solder plating device portion.

Continuation of the front page (56) Reference JP-A-10-229152 (JP, A) JP-A-7-305193 (JP, A) JP-A-9-111491 (JP, A) JP-A-58-181894 (JP , A) JP 62-202094 (JP, A) JP 57-54294 (JP, A) JP 2001-234390 (JP, A) JP 11-229178 (JP, A) (58) Survey Fields (Int.Cl. ⁷ , DB name) C25D 5/10 C25D 7/00 C25D 7/12 H01L 23/50

Claims (5)

(57) [Claims] 1. A first member made of Sn metal on the surface of a conductive member.
Plating film, alloy of Sn metal and Bi metal, S
In a plating apparatus for forming a second plating film made of an alloy of n metal and Ag metal or an alloy of Sn metal and Cu metal in an overlapping manner, a Sn material, a solvent for dissolving the Sn material, and an organic acid A first plating bath containing a first plating solution consisting of an additive and pure water; an Sn material of the same kind as the first plating solution; and a solvent of the same kind as the first plating solution dissolving the Sn material. , Bi material, Ag material or Cu material 1
A second plating solution containing a metal material of a kind, a solvent for dissolving the metal material, an organic acid of the same kind as the first plating solution, an additive of the same kind as the first plating solution, and pure water is stored. After immersing the second plating bath and the conductive member in the first plating liquid in the first plating bath, the first plating liquid is transferred to the conductive member without washing with water. And a transport means for immersing the conductive member in the second plating solution in the second plating bath. 2. The transport means is one transport rail, and the first plating bath and the second plating bath are continuously arranged below the transport rail. The plating apparatus according to Item 1. 3. The plating apparatus according to claim 1, wherein a Sn-soluble electrode is installed as an anode electrode in each of the first plating bath and the second plating bath. 4. The Sn-soluble electrode has a purity of 99.9%.
The plating apparatus according to claim 3, wherein the plating apparatus is made of the above Sn. 5. The plating apparatus according to any one of claims 1 to 4, wherein a plating solution storage bath is arranged in the second plating bath.