JP2001229674A5 - - Google Patents

Download PDF

Info

Publication number
JP2001229674A5
JP2001229674A5 JP2000337241A JP2000337241A JP2001229674A5 JP 2001229674 A5 JP2001229674 A5 JP 2001229674A5 JP 2000337241 A JP2000337241 A JP 2000337241A JP 2000337241 A JP2000337241 A JP 2000337241A JP 2001229674 A5 JP2001229674 A5 JP 2001229674A5
Authority
JP
Japan
Prior art keywords
clock
circuit
misfet
semiconductor device
memory cells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000337241A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001229674A (ja
JP4111304B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2000337241A priority Critical patent/JP4111304B2/ja
Priority claimed from JP2000337241A external-priority patent/JP4111304B2/ja
Publication of JP2001229674A publication Critical patent/JP2001229674A/ja
Publication of JP2001229674A5 publication Critical patent/JP2001229674A5/ja
Application granted granted Critical
Publication of JP4111304B2 publication Critical patent/JP4111304B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2000337241A 1999-12-08 2000-10-31 半導体装置 Expired - Fee Related JP4111304B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000337241A JP4111304B2 (ja) 1999-12-08 2000-10-31 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP34840599 1999-12-08
JP11-348405 1999-12-08
JP2000337241A JP4111304B2 (ja) 1999-12-08 2000-10-31 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006304652A Division JP4650900B2 (ja) 1999-12-08 2006-11-10 半導体装置

Publications (3)

Publication Number Publication Date
JP2001229674A JP2001229674A (ja) 2001-08-24
JP2001229674A5 true JP2001229674A5 (enrdf_load_stackoverflow) 2005-07-21
JP4111304B2 JP4111304B2 (ja) 2008-07-02

Family

ID=26578737

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000337241A Expired - Fee Related JP4111304B2 (ja) 1999-12-08 2000-10-31 半導体装置

Country Status (1)

Country Link
JP (1) JP4111304B2 (enrdf_load_stackoverflow)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004171678A (ja) * 2002-11-20 2004-06-17 Sony Corp 情報記憶装置、情報記憶方法、及び情報記憶プログラム
JP2006092640A (ja) 2004-09-24 2006-04-06 Sanyo Electric Co Ltd メモリ
JP4672341B2 (ja) * 2004-11-22 2011-04-20 株式会社東芝 半導体記憶装置
JP4753637B2 (ja) 2005-06-23 2011-08-24 パトレネラ キャピタル リミテッド， エルエルシー メモリ
JP4362573B2 (ja) 2005-07-28 2009-11-11 パトレネラ キャピタル リミテッド， エルエルシー メモリ
US7733681B2 (en) 2006-04-26 2010-06-08 Hideaki Miyamoto Ferroelectric memory with amplification between sub bit-line and main bit-line
CN101089992B (zh) * 2006-06-16 2012-09-05 帕特兰尼拉财富有限公司 存储器
JP4272227B2 (ja) 2006-06-16 2009-06-03 三洋電機株式会社 メモリおよび制御装置
JP4195899B2 (ja) * 2006-06-16 2008-12-17 三洋電機株式会社 強誘電体メモリ

Similar Documents

Publication Publication Date Title
TWI514416B (zh) 記憶胞以及動態記憶體陣列
JP3140461B2 (ja) ランダム・アクセス・メモリ
US9281047B2 (en) Dynamic random access memory with fully independent partial array refresh function
US6381188B1 (en) DRAM capable of selectively performing self-refresh operation for memory bank
US8295101B2 (en) Semiconductor device
JP4632114B2 (ja) 半導体集積回路装置
US6728157B2 (en) Semiconductor memory
JP2012022751A (ja) 半導体装置
US6879540B2 (en) Synchronous semiconductor memory device having dynamic memory cells and operating method thereof
JP2003257178A (ja) 半導体メモリ装置
US4873672A (en) Dynamic random access memory capable of fast erasing of storage data
JP2000156079A (ja) マルチバンク構造を有する半導体メモリ装置
CN101809668A (zh) 用于在高速动态随机存取存储器中处理信号的系统及方法
US6657920B2 (en) Circuit for generating internal address in semiconductor memory device
JP2001229674A5 (enrdf_load_stackoverflow)
US7548485B2 (en) Semiconductor memory device capable of synchronous/asynchronous operation and data input/output method thereof
US6339560B1 (en) Semiconductor memory based on address transitions
JPH10222977A (ja) 半導体メモリ装置の隔離ゲート制御方法及び回路
US7835180B2 (en) Semiconductor memory device
US6570799B1 (en) Precharge and reference voltage technique for dynamic random access memories
US6693838B2 (en) Semiconductor memory device equipped with refresh timing signal generator
US20100110747A1 (en) Semiconductor memory device
US7283421B2 (en) Semiconductor memory device
JPH07192461A (ja) 半導体記憶装置
JP4060527B2 (ja) クロック同期型ダイナミックメモリ