JP2001223410A - 音響共振デバイス用の分離方法 - Google Patents

音響共振デバイス用の分離方法

Info

Publication number
JP2001223410A
JP2001223410A JP2001026212A JP2001026212A JP2001223410A JP 2001223410 A JP2001223410 A JP 2001223410A JP 2001026212 A JP2001026212 A JP 2001026212A JP 2001026212 A JP2001026212 A JP 2001026212A JP 2001223410 A JP2001223410 A JP 2001223410A
Authority
JP
Japan
Prior art keywords
piezoelectric material
substrate
piezoelectric
acoustic
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001026212A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001223410A5 (enExample
Inventor
Bradley Paul Barber
ポール バーバー ブラッドレー
Linus Albert Fetter
アルバート フェッター リナス
Michael George Zierdt
ジョージ ジアート ミッチェル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nokia of America Corp
Original Assignee
Lucent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lucent Technologies Inc filed Critical Lucent Technologies Inc
Publication of JP2001223410A publication Critical patent/JP2001223410A/ja
Publication of JP2001223410A5 publication Critical patent/JP2001223410A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02118—Means for compensation or elimination of undesirable effects of lateral leakage between adjacent resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49005—Acoustic transducer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
JP2001026212A 2000-02-04 2001-02-02 音響共振デバイス用の分離方法 Pending JP2001223410A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/497993 2000-02-04
US09/497,993 US7296329B1 (en) 2000-02-04 2000-02-04 Method of isolation for acoustic resonator device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013217576A Division JP5559411B2 (ja) 2000-02-04 2013-10-18 音響共振デバイス用の分離方法

Publications (2)

Publication Number Publication Date
JP2001223410A true JP2001223410A (ja) 2001-08-17
JP2001223410A5 JP2001223410A5 (enExample) 2008-03-21

Family

ID=23979175

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2001026212A Pending JP2001223410A (ja) 2000-02-04 2001-02-02 音響共振デバイス用の分離方法
JP2013217576A Expired - Fee Related JP5559411B2 (ja) 2000-02-04 2013-10-18 音響共振デバイス用の分離方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2013217576A Expired - Fee Related JP5559411B2 (ja) 2000-02-04 2013-10-18 音響共振デバイス用の分離方法

Country Status (8)

Country Link
US (2) US7296329B1 (enExample)
EP (1) EP1126601A3 (enExample)
JP (2) JP2001223410A (enExample)
KR (1) KR100745428B1 (enExample)
CN (1) CN1203464C (enExample)
AU (1) AU1673901A (enExample)
BR (1) BR0100192A (enExample)
CA (2) CA2642731C (enExample)

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US7038559B2 (en) * 2004-02-23 2006-05-02 Ruby Richard C Vertically separated acoustic filters and resonators
JP4535841B2 (ja) 2004-10-28 2010-09-01 富士通メディアデバイス株式会社 圧電薄膜共振子及びこれを用いたフィルタ
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US8513863B2 (en) 2009-06-11 2013-08-20 Qualcomm Mems Technologies, Inc. Piezoelectric resonator with two layers
JP6851368B2 (ja) * 2015-08-18 2021-03-31 フジフィルム ソノサイト インコーポレイテッド 高周波数超音波に対する膜ハイドロホンおよび製造方法
US10135415B2 (en) * 2015-12-18 2018-11-20 Texas Instruments Incorporated Method to reduce frequency distribution of bulk acoustic wave resonators during manufacturing
US11579011B2 (en) 2016-02-19 2023-02-14 Fujifilm Sonosite, Inc. Membrane hydrophone for high frequency ultrasound and method of manufacture
US10178459B2 (en) 2016-03-09 2019-01-08 Mrspeakers, Llc Loudspeaker with acoustic impedance system
KR102722507B1 (ko) 2017-12-07 2024-10-29 인피니언 테크놀로지스 아게 음향적으로 결합된 공진기 노치 및 대역 통과 필터
CN108231995B (zh) * 2018-02-05 2024-04-19 武汉衍熙微器件有限公司 一种压电器件及其制备方法
CN110120793B (zh) * 2018-02-05 2024-11-12 武汉衍熙微器件有限公司 具有非c轴优选压电层的薄膜体声波谐振器
US11594668B2 (en) * 2018-12-28 2023-02-28 Tdk Corporation Thin film laminate, thin film device and multilayer substrate
US11563418B2 (en) 2019-03-25 2023-01-24 Skyworks Solutions, Inc. Methods of manufacturing acoustic wave resonators with isolation
US12501642B2 (en) 2020-10-07 2025-12-16 Hrl Laboratories, Llc Semiconductor materials and devices including iii-nitride layers integrated with scandium aluminum nitride
CN113054941B (zh) * 2021-02-09 2023-11-24 偲百创(深圳)科技有限公司 声波谐振器制作方法及声波谐振器
US20230246630A1 (en) * 2022-01-31 2023-08-03 Texas Instruments Incorporated Substrate top side roughening

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Also Published As

Publication number Publication date
US8631547B2 (en) 2014-01-21
CA2330019A1 (en) 2001-08-04
CN1319835A (zh) 2001-10-31
CA2642731A1 (en) 2001-08-04
JP2014017881A (ja) 2014-01-30
AU1673901A (en) 2001-08-09
US20080028585A1 (en) 2008-02-07
CA2330019C (en) 2008-12-30
EP1126601A3 (en) 2006-03-22
CA2642731C (en) 2013-10-15
KR100745428B1 (ko) 2007-08-02
KR20010078314A (ko) 2001-08-20
EP1126601A2 (en) 2001-08-22
BR0100192A (pt) 2001-10-09
CN1203464C (zh) 2005-05-25
JP5559411B2 (ja) 2014-07-23
US7296329B1 (en) 2007-11-20

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