CN1319835A - 声共振器装置的隔离方法 - Google Patents
声共振器装置的隔离方法 Download PDFInfo
- Publication number
- CN1319835A CN1319835A CN01101666A CN01101666A CN1319835A CN 1319835 A CN1319835 A CN 1319835A CN 01101666 A CN01101666 A CN 01101666A CN 01101666 A CN01101666 A CN 01101666A CN 1319835 A CN1319835 A CN 1319835A
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- CN
- China
- Prior art keywords
- piezoelectric
- substrate
- sound resonator
- zone
- resonator
- Prior art date
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- 238000002955 isolation Methods 0.000 title claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 59
- 239000000463 material Substances 0.000 claims abstract description 39
- 239000013078 crystal Substances 0.000 claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 claims abstract description 13
- 230000008054 signal transmission Effects 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims description 53
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 25
- 230000008569 process Effects 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 17
- 230000008021 deposition Effects 0.000 claims description 12
- 239000004020 conductor Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 238000001459 lithography Methods 0.000 claims description 5
- 230000005571 horizontal transmission Effects 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 2
- 230000002238 attenuated effect Effects 0.000 claims 2
- 230000002708 enhancing effect Effects 0.000 claims 2
- 239000011521 glass Substances 0.000 claims 1
- 239000010409 thin film Substances 0.000 abstract description 6
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- 230000026683 transduction Effects 0.000 abstract 1
- 238000010361 transduction Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 22
- 230000000694 effects Effects 0.000 description 16
- 238000000151 deposition Methods 0.000 description 11
- 230000008859 change Effects 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 230000033001 locomotion Effects 0.000 description 5
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 4
- 238000005192 partition Methods 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 229910017083 AlN Inorganic materials 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 238000007645 offset printing Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 238000003631 wet chemical etching Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000012940 design transfer Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000006355 external stress Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000010358 mechanical oscillation Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000011002 quantification Methods 0.000 description 1
- 238000007634 remodeling Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000527 sonication Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- GOLXNESZZPUPJE-UHFFFAOYSA-N spiromesifen Chemical compound CC1=CC(C)=CC(C)=C1C(C(O1)=O)=C(OC(=O)CC(C)(C)C)C11CCCC1 GOLXNESZZPUPJE-UHFFFAOYSA-N 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02118—Means for compensation or elimination of undesirable effects of lateral leakage between adjacent resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49005—Acoustic transducer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
Claims (27)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/497,993 | 2000-02-04 | ||
US09/497,993 US7296329B1 (en) | 2000-02-04 | 2000-02-04 | Method of isolation for acoustic resonator device |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1319835A true CN1319835A (zh) | 2001-10-31 |
CN1203464C CN1203464C (zh) | 2005-05-25 |
Family
ID=23979175
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB011016663A Expired - Fee Related CN1203464C (zh) | 2000-02-04 | 2001-01-19 | 声共振器装置的隔离方法 |
Country Status (8)
Country | Link |
---|---|
US (2) | US7296329B1 (zh) |
EP (1) | EP1126601A3 (zh) |
JP (2) | JP2001223410A (zh) |
KR (1) | KR100745428B1 (zh) |
CN (1) | CN1203464C (zh) |
AU (1) | AU1673901A (zh) |
BR (1) | BR0100192A (zh) |
CA (2) | CA2330019C (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108231995A (zh) * | 2018-02-05 | 2018-06-29 | 武汉衍熙微器件有限公司 | 一种压电器件及其制备方法 |
CN110120793A (zh) * | 2018-02-05 | 2019-08-13 | 武汉衍熙微器件有限公司 | 具有非c轴优选压电层的薄膜体声波谐振器 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20030032401A (ko) * | 2001-10-18 | 2003-04-26 | 한국쌍신전기주식회사 | 압전박막형 공진기 및 그 제조방법 |
US7038559B2 (en) * | 2004-02-23 | 2006-05-02 | Ruby Richard C | Vertically separated acoustic filters and resonators |
JP4535841B2 (ja) * | 2004-10-28 | 2010-09-01 | 富士通メディアデバイス株式会社 | 圧電薄膜共振子及びこれを用いたフィルタ |
FI118829B (fi) * | 2005-07-08 | 2008-03-31 | Valtion Teknillinen | Mikromekaaninen sensori, sensoriryhmä ja menetelmä sekä pitkittäisten akustisten aaltojen uusi käyttö |
US8291559B2 (en) * | 2009-02-24 | 2012-10-23 | Epcos Ag | Process for adapting resonance frequency of a BAW resonator |
US8513863B2 (en) | 2009-06-11 | 2013-08-20 | Qualcomm Mems Technologies, Inc. | Piezoelectric resonator with two layers |
TWI709730B (zh) * | 2015-08-18 | 2020-11-11 | 美商富士膠片索諾聲公司 | 用於高頻超音波的膜水下聽音器及其製造方法 |
US10135415B2 (en) * | 2015-12-18 | 2018-11-20 | Texas Instruments Incorporated | Method to reduce frequency distribution of bulk acoustic wave resonators during manufacturing |
US11579011B2 (en) | 2016-02-19 | 2023-02-14 | Fujifilm Sonosite, Inc. | Membrane hydrophone for high frequency ultrasound and method of manufacture |
US10178459B2 (en) | 2016-03-09 | 2019-01-08 | Mrspeakers, Llc | Loudspeaker with acoustic impedance system |
KR20190067715A (ko) | 2017-12-07 | 2019-06-17 | 인피니언 테크놀로지스 아게 | 음향적으로 결합된 공진기 노치 및 대역 통과 필터 |
US11594668B2 (en) * | 2018-12-28 | 2023-02-28 | Tdk Corporation | Thin film laminate, thin film device and multilayer substrate |
US11463069B2 (en) | 2019-03-25 | 2022-10-04 | Skyworks Solutions, Inc. | Acoustic wave filters with isolation |
CN113054941B (zh) * | 2021-02-09 | 2023-11-24 | 偲百创(深圳)科技有限公司 | 声波谐振器制作方法及声波谐振器 |
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JP4327942B2 (ja) | 1999-05-20 | 2009-09-09 | Tdk株式会社 | 薄膜圧電素子 |
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2000
- 2000-02-04 US US09/497,993 patent/US7296329B1/en not_active Expired - Lifetime
-
2001
- 2001-01-02 CA CA002330019A patent/CA2330019C/en not_active Expired - Fee Related
- 2001-01-02 CA CA2642731A patent/CA2642731C/en not_active Expired - Fee Related
- 2001-01-19 CN CNB011016663A patent/CN1203464C/zh not_active Expired - Fee Related
- 2001-01-22 EP EP01300530A patent/EP1126601A3/en not_active Withdrawn
- 2001-01-29 BR BR0100192-2A patent/BR0100192A/pt not_active Application Discontinuation
- 2001-01-31 AU AU16739/01A patent/AU1673901A/en not_active Abandoned
- 2001-02-02 JP JP2001026212A patent/JP2001223410A/ja active Pending
- 2001-02-03 KR KR1020010005225A patent/KR100745428B1/ko not_active IP Right Cessation
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2007
- 2007-10-01 US US11/906,196 patent/US8631547B2/en not_active Expired - Lifetime
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108231995A (zh) * | 2018-02-05 | 2018-06-29 | 武汉衍熙微器件有限公司 | 一种压电器件及其制备方法 |
CN110120793A (zh) * | 2018-02-05 | 2019-08-13 | 武汉衍熙微器件有限公司 | 具有非c轴优选压电层的薄膜体声波谐振器 |
CN108231995B (zh) * | 2018-02-05 | 2024-04-19 | 武汉衍熙微器件有限公司 | 一种压电器件及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
EP1126601A2 (en) | 2001-08-22 |
US8631547B2 (en) | 2014-01-21 |
JP2014017881A (ja) | 2014-01-30 |
KR100745428B1 (ko) | 2007-08-02 |
AU1673901A (en) | 2001-08-09 |
CA2642731C (en) | 2013-10-15 |
CA2642731A1 (en) | 2001-08-04 |
EP1126601A3 (en) | 2006-03-22 |
CA2330019A1 (en) | 2001-08-04 |
US20080028585A1 (en) | 2008-02-07 |
JP5559411B2 (ja) | 2014-07-23 |
US7296329B1 (en) | 2007-11-20 |
CN1203464C (zh) | 2005-05-25 |
KR20010078314A (ko) | 2001-08-20 |
BR0100192A (pt) | 2001-10-09 |
JP2001223410A (ja) | 2001-08-17 |
CA2330019C (en) | 2008-12-30 |
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