JP2001196504A - Packaged semiconductor element, three-dimensional semiconductor device and method of manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To realize high density mounting by reducing the package size and to reduce the manufacturing cost by eliminating the need for a molding die. SOLUTION: The semiconductor package comprises a semiconductor device 10, a lead frame 12 connected with the semiconductor device 10, and a resin for sealing the semiconductor device 10, wherein the lead frame 12 comprises a metal foil on which a circuit pattern is formed, the sealing resin comprises thermoplastic resin 11, 13 bonded to the opposite sides of the lead frame 12 and the semiconductor device 10, the lead frame 12 and the thermoplastic resin 11, 13 on the opposite sides thereof are bend along the opposite sides of the semiconductor device 10, and the end of the lead frame 12 is exposed on the rear side of the semiconductor device 10.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor package element, a three-dimensional semiconductor device and a method of manufacturing the same, and more particularly, to a semiconductor package element having a lead frame structure, a method of manufacturing the same, and a stack of the semiconductor package elements. The present invention relates to a three-dimensional semiconductor device and a method for manufacturing the same.

[0002]

2. Description of the Related Art Conventionally, a three-dimensional semiconductor device formed by laminating a plurality of semiconductor package elements having a lead frame structure is disclosed in, for example, Japanese Patent No. 2765823, and FIGS. Is shown. FIG.
The semiconductor package element shown in FIG. 1 is schematically composed of a semiconductor chip 1, a lead frame 3 connected to the semiconductor chip 1, and a package body 4 which is a sealing resin. In this semiconductor package device, internal leads 3a of a lead frame 3 are bonded to the upper surface of a semiconductor chip 1 via an adhesive 5, and pads 6 and wires 7 on the semiconductor chip 1 are formed.
LOC (Lead On)
(Chip) structure.

[0003] The lead frame 3 is provided with the internal leads 3a.
, A coupling lead 3b, and an external lead 3c for mounting the semiconductor package element on an external circuit board. The connecting lead 3d is bent, and the vertical connecting means 8 is attached to the connecting lead 3b. The coupling leads 3b serve to electrically and mechanically couple the upper and lower semiconductor package elements together with the vertical connection means 8 when a plurality of semiconductor package elements are stacked three-dimensionally. The entire semiconductor package element is resin-sealed with a package body 4. When performing resin sealing, a special molding die having a structure in which the resin in the lower part of the vertical connection means 8 is removed is used. In the structure shown in FIG. 9, the external leads 3c are cut and removed by the cutting step so as not to protrude from the semiconductor package element. However, depending on the mounting method, structure and means, the molded ends having various shapes as shown by chain lines are used. It may be 3d. When the semiconductor package elements are connected in multiple stages to form a three-dimensional semiconductor device, a conductive material such as solder or conductive paste is embedded in the vertical connection means 8 and, as shown in FIG. The material and the connection lead 3b are joined to make electrical and mechanical connection.

[0004]

However, in the conventional semiconductor package device as described above, since the vertical connection means 8 which is a multi-stage connection means is located on the outer peripheral portion of the semiconductor chip 1, the outer shape of the semiconductor package device is reduced. Is larger than the semiconductor chip 1 only in the vertical connection means 8 and the portion of the body 4 around the vertical connection means 8, and further larger than the semiconductor standard mold package. In addition, a special molding die is required to secure the structure of the vertical connection means 8, and it takes time and money to change the design of the die.

[0005] Further, for molding by a molding die,
The processing accuracy of the vertical connection means 8 is limited, and cannot be adapted to a narrow pitch (150 μm or less). Therefore, the package size inevitably increases, and as a result, high-density mounting becomes impossible. Further, the lead frame 3 also requires special processing such as the coupling lead 3b and is expensive.
Further, in the lead frame 3 having this structure, the dimension in the thickness direction is as thick as about 0.12 mm, so that the entire package is also thick. As described above, the conventional semiconductor package element necessarily increases the package size and has a problem that it is not suitable for high-density mounting. SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and has a reduced package size, enables high-density mounting, does not require a molding die, and can be manufactured at low cost. It is an object to provide an apparatus, a semiconductor package element, and a method for manufacturing the same.

[0006]

According to a first aspect of the present invention, there is provided a semiconductor device, a lead frame connected to the semiconductor device, and a sealing resin for sealing the semiconductor device. Wherein the sealing resin is made of a thermoplastic resin adhered to both surfaces of the lead frame and the semiconductor device.

According to a second aspect of the present invention, there is provided the semiconductor package device according to the first aspect, wherein the lead frame is made of a metal foil on which a circuit pattern is formed.

According to a third aspect of the present invention, there is provided the semiconductor package device according to the first or second aspect, wherein the lead frame has an inner lead at a tip end of a lead frame main body formed of a frame-shaped metal sheet. The inner lead portion is characterized in that the thermoplastic resin is bonded to both surfaces of the inner lead portion.

[0009] The invention described in claim 4 is based on claim 1,
4. The semiconductor package element according to 2 or 3, wherein the lead frame and the thermoplastic resin on both surfaces thereof are bent along both ends of the semiconductor device, and the inner thermoplastic resin is adhered to the semiconductor device, and the lead is formed. An end surface of the frame is exposed on a back surface side of the semiconductor device.

According to a fifth aspect of the present invention, there is provided the semiconductor package device according to any one of the first to fourth aspects, wherein the lead frame is bent along the back surface of the semiconductor device. A bent portion is formed on the back surface of the semiconductor device.

According to a sixth aspect of the present invention, there is provided the semiconductor package device according to any one of the first to fifth aspects, wherein the lead frame and the semiconductor device are connected via conductive bumps and pads. It is characterized by having.

According to a seventh aspect of the present invention, there is provided the semiconductor package device according to any one of the first to sixth aspects, wherein an opening is formed by partially exposing the lead frame on an upper surface of the thermoplastic resin. Is formed.

[0013] The invention according to claim 8 is a semiconductor device, a lead frame connected to the semiconductor device,
The present invention relates to a method for manufacturing a semiconductor package element comprising a sealing resin for sealing the semiconductor device, wherein an inner thermoplastic resin is adhered to a lead frame made of a metal foil having a circuit pattern formed thereon, and the inner side is attached to the lead frame. Forming a bump protruding from the thermoplastic resin, bonding the inner thermoplastic resin to the semiconductor device and connecting the bump of the lead frame to the semiconductor device, and bonding the lead frame and the inner thermoplastic resin to the semiconductor device. The method is characterized by including a step of bending and bonding along both end surfaces of the semiconductor device, and a step of bonding an outer thermoplastic resin to the lead frame.

According to a ninth aspect of the present invention, there is provided a semiconductor device, a lead frame connected to the semiconductor device,
The present invention relates to a method of manufacturing a semiconductor package element comprising a sealing resin for sealing the semiconductor device, wherein inner and outer thermoplastic resins are bonded to both surfaces of a lead frame made of a metal foil having a circuit pattern formed thereon, and the lead is Forming a flexible lead frame member by forming a bump protruding from the inner thermoplastic resin on a frame; and bonding the inner thermoplastic resin to a semiconductor device and connecting the bump of the lead frame to the semiconductor device. And bending and bonding the flexible lead frame member along both end surfaces of the semiconductor device.

According to a tenth aspect of the present invention, there is provided a semiconductor device, a lead frame connected to the semiconductor device,
The present invention relates to a method of manufacturing a semiconductor package element comprising a sealing resin for sealing the semiconductor device, a step of bonding a thermoplastic resin to a metal foil, a step of applying a resist to the metal foil, and a circuit pattern. A step of performing exposure and development using a mask, a step of forming a circuit pattern by etching and patterning a metal foil to form a lead frame, and a step of forming a bump on the lead frame; and Forming a plating layer on the bump side, bonding an inner thermoplastic resin on the plating layer and exposing the bump, and bonding an outer thermoplastic resin on the lead frame opposite to the bump. Forming a flexible lead frame member, and bonding the inner thermoplastic resin to the semiconductor device, Connect the amplifier to the semiconductor device, the flexible lead frame member is characterized by adhering folded along the end faces of the semiconductor device.

According to the eleventh aspect of the present invention, there is provided a semiconductor device, a lead frame connected to the semiconductor device,
A method of manufacturing a semiconductor package element comprising a sealing resin for sealing the semiconductor device, wherein a step of forming a thin inner lead portion in a portion of the lead frame body portion made of a metal sheet located near the semiconductor device; and Forming a lead frame structure by bonding a thermoplastic resin to both surfaces of the lead frame main body portion and the inner lead portion, and forming a bump on the inner surface of the inner lead portion. The semiconductor device is carried on a semiconductor device, the bump is connected to a pad of the semiconductor device, the inner lead portion and the lead frame main body are cut and separated, and the inner lead portion is bonded to the semiconductor device.

The invention according to claim 12 is the invention according to claim 7.
A three-dimensional semiconductor device in which a plurality of the semiconductor package elements described above are stacked, wherein the lead frame exposed at an opening of the lower semiconductor package element and a back side exposed at an upper layer of the semiconductor package element. Is electrically connected to the lead frame.

According to a thirteenth aspect of the present invention, in the three-dimensional semiconductor device according to the twelfth aspect, the portion of the upper layer exposed on the back side of the semiconductor package element is a bent lead portion of the lead frame. It is characterized by.

According to a fourteenth aspect of the present invention, there is provided a method of manufacturing a three-dimensional semiconductor device in which a plurality of semiconductor package elements are stacked. Thus, the semiconductor package elements are mechanically joined to each other, and an electrical connection is made by melting a conductive connecting material applied to the opening.

[0020]

Embodiments of the present invention will be described below with reference to the drawings. The description will be specifically made using an embodiment. FIG. 1 is a sectional view showing a configuration of a semiconductor package device according to a first embodiment of the present invention. The semiconductor package element A1 of this example includes a semiconductor device 10
A lead frame 12 made of a metal foil bent at right angles to the sides from above the semiconductor device 10, pads 14 and bumps 15 connecting the semiconductor device 10 and the lead frame 12, and an inside of the metal foil 3. And a semiconductor device 10, and an outer thermoplastic resin 4 provided outside the metal foil 3.

The lead frame 12 has a structure in which a circuit pattern corresponding to the semiconductor device 10 is formed on a metal foil, and a thin (preferably 50 μm or less) conductive metal material, for example, a copper foil is used. You. The semiconductor device 10 and the lead frame 12 are composed of a pad 14 provided on the semiconductor device 10 and a bump 1 provided on the lead frame 12.
5 electrically and mechanically. The bumps 15 may be provided on the lead frame 12 side. The thickness of each of the thermoplastic resins 11 and 13 is the same as that of the lead frame 1.
Similar to 2, the thickness is preferably 50 μm or less. Thereby, a small-sized semiconductor package element A1 whose outer shape is close to the outer shape of the semiconductor device 1 is obtained. The bonding between the inner and outer thermoplastic resins 11 and 13 and the lead frame 12 and the bonding between the inner thermoplastic resin 11 and the semiconductor device 10 are about 150 to
This is performed by a reflow or thermocompression bonding method at a temperature of 350 ° C. The pads 14 and the bumps 15 are also joined by reflow or thermocompression bonding at a temperature of about 150 to 350 ° C., depending on the material of the bumps.

FIG. 2 is a sectional view showing the structure of a semiconductor package device according to a second embodiment of the present invention. The semiconductor package element A2 of this example has substantially the same structure as that of the semiconductor package element A1 of the first embodiment (FIG. 1), that is, the semiconductor device 10 and the semiconductor device 10 are bent at right angles to the sides from above. A lead frame 12 made of a metal foil, pads 14 and bumps 15 connecting the semiconductor device 10 and the metal foil 3, and an inner thermoplastic resin 11 provided between the inside of the metal foil 3 and the semiconductor device 10
And an outer thermoplastic resin 1 provided outside the metal foil 3
And 3 schematically. The difference between the semiconductor package element A2 of the second embodiment and the semiconductor package element A1 of the first embodiment is that the bent portion 1 is formed at the outer end of the inner thermoplastic resin 11.
1a is processed and bonded to the back surface 10a of the semiconductor device 10, and furthermore, a bent lead portion 12a is formed at the outer end of the lead frame 12 and bonded to the back surface of the bent formed portion 11a. With this configuration, the semiconductor package element A
In the case where a three-dimensional semiconductor device to be described later is formed by laminating the two, a large connection area of the multistage connection portion can be obtained by the bent lead portion 12a.

FIG. 3 is a sectional view showing a configuration of a three-dimensional semiconductor device according to a third embodiment of the present invention. As shown in FIG. 3A, in this example, the same structure as that of the semiconductor package element A1 of the first embodiment is used for the multistage connection, and the multistage connection is performed at both ends of the upper surface of the outer thermoplastic resin 13. Package element A3 having a structure in which the lead frame 12 is exposed by forming an opening 16 for the semiconductor device.
The opening 16 can be formed by etching a resin using a lithography technique or laser processing. As shown in FIG. 3B, the semiconductor package element A3 shown in FIG. 3A is used for the lowermost layer, two layers, and three layers, and the semiconductor layer having the same structure as the first embodiment of FIG. It has a laminated structure using the package element A1. The electrical connection between the upper and lower semiconductor package elements is made by using a connecting material 17 such as solder or conductive paste applied to the opening 16 and using the lead frame 12 of the upper semiconductor package element.
Is connected to the exposed portion of the lead frame 12 of the lower semiconductor package element.

In the manufacture of the three-dimensional semiconductor device of this example, semiconductor package elements are stacked in four stages (the number is arbitrary) and reflowed or thermocompressed (at a temperature of about 150 to 350 °).
Multi-stage connection by C) or the like. Thereby, about 150 to 3
Due to the thermoplastic resin property that exhibits adhesiveness at 50 ° C., the semiconductor package elements are mechanically joined, and at the same time, the connecting material 17 is melted to perform the above-described electrical connection. The optimum temperature for the reflow or thermocompression bonding is determined by the material of the connection member 17.

FIG. 4 is a sectional view showing a configuration of a three-dimensional semiconductor device according to a fourth embodiment of the present invention. As shown in FIG. 4 (a), in this example, the multi-stage connection uses the same structure as the semiconductor package element A2 of the second embodiment, and is connected to both ends of the upper surface of the outer thermoplastic resin 13 in a multi-stage connection. The semiconductor package element A4 has a structure in which an opening 16 is formed and the lead frame 12 is exposed.
The opening 16 can be formed by etching a resin using a lithography technique or laser processing. As shown in FIG. 4B, the semiconductor package element A4 shown in FIG. 4A is used for the lowermost layer, two layers, and three layers, and the semiconductor layer having the same structure as the second embodiment of FIG. It has a laminated structure using the package element A2. The electrical connection between the upper and lower semiconductor package elements is made by using a connecting material 17 such as solder or conductive paste applied to the opening 16 and using the lead frame 12 of the upper semiconductor package element.
By connecting the bent lead portion 12a of FIG. 5 with the exposed portion of the lead frame 12 of the lower semiconductor package element.

In the manufacture of the three-dimensional semiconductor device of this example, semiconductor package elements are stacked in four stages (the number is arbitrary) and reflowed or thermocompressed (at a temperature of about 150 to 350 °).
Multi-stage connection by C) or the like. Thereby, about 150 to 3
Due to the thermoplastic resin property that exhibits adhesiveness at 50 ° C., the semiconductor package elements are mechanically joined, and at the same time, the connecting material 17 is melted to perform the above-described electrical connection. The optimum temperature for the reflow or thermocompression bonding is determined by the material of the connection member 17. The bent lead portion 12a allows a large connection area of the multi-stage connection portion to be obtained, and a stable and highly reliable three-dimensional semiconductor device having a multi-stage connection structure can be obtained.

FIG. 5 is a manufacturing process diagram showing a method of manufacturing a semiconductor package device according to a fifth embodiment of the present invention.
In the step shown in FIG. 5 (a), an inner thermoplastic resin 11 which exhibits adhesiveness at a temperature of about 150 ° C. is reflowed or thermocompression-bonded to the inside of a lead frame 12 made of a metal foil. Hole 1 for forming bump 15 in
9 is formed by etching, a laser method or the like. This hole 19 may be exposed even if the metal foil 3 is exposed, but if necessary, Ni or Ni may be formed by electrolytic or electroless plating.
-Au, Pd plating may be applied. Thereafter, bumps 15 are formed by a stud bump forming method, a solder ball method, a solder printing reflow method, and a conductive paste. The thermoplastic resin may have either non-photosensitive or photosensitive characteristics, but is preferably a photosensitive material because the number of processes during photoetching is reduced.

In the step shown in FIG. 5B, the bumps 15 of the lead frame 12 and the pads 14 of the semiconductor device 10 are formed.
Is aligned using a flip chip bonder and reflow or thermocompression bonding is performed. At this time, the semiconductor device 10
The inner thermoplastic resin 11 can be entirely adhered to the inner thermoplastic resin 11 except for the pads 14 and the bumps 15 by utilizing the thermoplastic resin properties that exhibit adhesiveness at a temperature of about 150 ° C. Next, as shown in FIG. 5 (c), the lead frame 12 and the inner thermoplastic resin 11 are bent along both end surfaces of the semiconductor device 10 and are simultaneously subjected to reflow or thermocompression by applying a heat of about 150 ° C. . When the end portions of the inner thermoplastic resin 11 and the lead frame 12 protrude from the back surface of the semiconductor device 10, they are cut so as to be flush with each other, and the polishing 12 is preferably performed. By this step, a structure is obtained in which the device surface (upper surface) and the end surface 10b of the semiconductor device 10 are sealed with the thermoplastic resin 11.

Finally, as shown in FIG. 5D, the outer thermoplastic resin 13 is bonded to the lead frame 12. That is, the outer thermoplastic resin 13 is bonded to the upper surface and the side surfaces of the lead frame 12 by utilizing the property that the adhesive property is obtained at a temperature of about 150 ° C. Thus, the outside of the lead frame 12 is also sealed with the outside thermoplastic resin 13. Through this step, the semiconductor package element A1 of the first embodiment is manufactured. In the manufacturing method of this example, a small and small semiconductor package element close to the chip size can be manufactured at low cost by using a method such as reflow or thermocompression bonding without using a mold for resin sealing. .

In the manufacturing method of the fifth embodiment shown in FIG. 5, the outer thermoplastic resin 13 is finally pressure-bonded.
First, a thermoplastic resin may be pressed on both sides of the lead frame to form a flexible lead frame member. That is, as shown in the manufacturing method according to the sixth embodiment shown in FIG. 6, an inner thermoplastic resin (a thermoplastic resin having an adhesive property at a temperature of about 150 ° C.) 11 is reflowed or heated on a lead frame 12 made of a metal foil. By pressing, a hole 19 is formed in the thermoplastic resin 11, and a bump 15 is formed in the hole 19. The steps so far are the same as those in FIG. Next, the outer thermoplastic resin 13 is reflowed or thermocompression-bonded to the lead frame 12. Thereby, the thermoplastic resin 11,
13, a flexible lead frame member F having both surfaces bonded and sealed is produced. The bump 15 of the flexible lead frame member F and the pad 1 of the semiconductor device 10
4 is aligned, adhered to the semiconductor device 10 by reflow or thermocompression of the flexible lead frame member F, and the end of the flexible lead frame member F is cut so as to be flush with the back surface of the semiconductor device 10. A semiconductor package device as shown in FIG.

FIG. 7 is a manufacturing process diagram showing a method of manufacturing a semiconductor package device according to a seventh embodiment of the present invention, showing a process of manufacturing a semiconductor package device using a flexible lead frame member. The resist coating, exposure and development are performed from above, but are illustrated upside down for the sake of explanation. As shown in FIG.
As a metal foil for the lead frame 12, a thickness of 15 to 18
A 12 μm thin copper foil 12A is prepared. Next, as shown in FIG. 7 (b), the outer thermoplastic resin 13 is thermocompression-bonded to the copper foil 12A by utilizing the property of the thermoplastic resin that exhibits adhesiveness at about 150 ° C. Next, as shown in FIG.
A resist 24A for forming A into a circuit pattern is applied by spin coating or the like.

Next, as shown in FIG. 7D, exposure and development are performed using a mask corresponding to the circuit pattern to form a post-development resist 24 corresponding to the circuit pattern.
A is prepared for etching. Next, as shown in FIG. 7E, a circuit pattern 26 is formed by etching the copper foil 12A to a required pattern and patterning the copper foil. Thus, the copper foil 12A is configured as the lead frame 12 on which the circuit pattern 26 corresponding to the semiconductor device 10 is formed. Next, as shown in FIG. 7F, a plating layer 18 is formed on the lead frame 12 by electrolytic or electroless plating as needed. The plating layer 18 is made of, for example, Ni-Au, Pd, Sn / Pb, Sn, Zn, or the like. At the same time, the conductive bumps 15 are formed by a stud bump forming method, a solder ball method, a solder printing reflow method, a bump forming method using a conductive paste, or the like. The bump 15 may be formed after the formation of the plating layer 18.

Next, as shown in FIG. 7G, the inner thermoplastic resin 11 is reflowed or thermocompression-bonded on the plating layer 18 on the patterned surface of the lead frame 12. This reflow or thermocompression bonding is carried out by utilizing the property of a thermoplastic resin that exhibits adhesiveness at about 150 ° C. Next, the thermoplastic resin 11 at the portion where the bump 15 is to be formed is processed by etching or a laser method to expose the bump 15. In addition,
The thermoplastic resin 11 having a hole formed at a position corresponding to the electrode pad 14 of the semiconductor device 10 may be bonded in advance. Next, as shown in FIG. 7 (h), the hole 1 exposing the lead frame 12 to the outer thermoplastic resin 13 is formed.
9 is formed by etching, a laser method or the like, and a stack pad 20 for multi-stage connection is formed thereon. Note that, without forming the stack pad 20, the lead frame 12
9 may be exposed, but if necessary, Ni-Au, Pd plating or the like is applied to the lead frame 12 in the hole portion by electrolytic or electroless plating.
Through this step, the flexible lead frame member F is configured.

Next, as shown in FIG. 7 (i), the bumps 15 of the flexible lead frame member F and the pads 14 of the semiconductor device 10 are aligned using a chip bonder, and thermocompression bonding is performed. At this time, the inside thermoplastic resin 11 can be completely adhered to the semiconductor device 10 except for the bumps 15 by utilizing the property that the adhesiveness is obtained at a temperature of about 150 ° C. Next, as shown in FIG. 7 (j), the flexible lead frame member F is bent along both end surfaces of the semiconductor device 10 and simultaneously reflowed or thermocompressed. As a result, the device surface and the end surface of the semiconductor device 10 have a structure sealed with resin, and a highly reliable semiconductor package element can be obtained. FIG.
The two steps shown in (i) and (j) can be performed simultaneously.

FIG. 8 is a manufacturing process diagram showing a manufacturing method of a semiconductor package element according to an eighth embodiment of the present invention, showing a manufacturing method when a general lead frame made of a metal sheet is used. I have. As shown in the cross-sectional view of FIG. 8A and the plan view of FIG. 8B, the lead frame main body 30 is formed from a frame-shaped metal sheet, and the tip of the lead frame main body 30 is formed by a half-etching method or the like. The thin inner lead portion 31 is formed by performing etching. The thickness t of the inner lead 31 is much smaller than that of the lead frame body 30. For example, when the thickness of the lead frame main body 30 is about 12
For the 0 μm level, the thickness (dimension t) of the portion of the inner lead 31 is formed as thin as about 15 to 18 μm.

Next, as shown in FIG. 8C, thermoplastic resins 11 and 13 (both having a thickness of 50 μm or less) are provided on both surfaces of the lead frame body 30 and the inner lead 31.
Glue. After that, a bump forming hole 33 is formed in a region of the thermoplastic resin 11 corresponding to the bump forming portion by etching, laser or the like. Although the hole 33 may have the inner lead portion 31 exposed,
If necessary, Ni-A by electrolytic or electroless plating
u, Pd plating. Thereafter, bumps 15 such as stud bumps, solder bumps, and conductive bumps are formed by a stud bump forming method, a solder ball method, a solder printing reflow method,
The conductive paste is formed by a bump forming method or the like.
The lead frame structure 34 thus configured is conveyed onto the semiconductor device 10 and the inner lead portion 31
Are connected to the pads 14 of the semiconductor device 10. Then, the inner lead 31 and the lead frame main body 30 are cut and separated by a cutting line 35,
Inner lead portion 31 and thermoplastic resin 1 on both sides thereof
The ends of the first and the first 13 are bent along the end face of the semiconductor device 10 and reflowed or thermocompression-bonded.

In the eighth embodiment, a structure cooperating with the lead frame main body 30 is employed, so that the assembly, sorting inspection, and other processes and equipment of the semiconductor device using the lead frames accumulated so far are not required. The semiconductor package element having the same chip size as the above embodiments can be manufactured at low cost. Although the embodiment of the present invention has been described in detail with reference to the drawings, the specific configuration is not limited to this embodiment, and the present invention is applicable even if there is a design change or the like without departing from the gist of the present invention. include. For example, the semiconductor package device of the above embodiment is
Although suitable for a three-dimensional semiconductor device, the present invention is not limited to this, and a single chip can be used as a highly reliable semiconductor device with a thin chip size. When the semiconductor device 1 is used as a single semiconductor device, the end surface of the inner thermoplastic resin 11 may be bent and pressed on the back surface of the semiconductor device 1 to seal the entire semiconductor device 1 with resin. In each of the above embodiments, the thermoplastic resin can be used for both non-photosensitive and photosensitive characteristics. However, the photosensitive resin is a desirable material because the number of processes during etching is reduced.

[0038]

As described above, according to the semiconductor package element of the present invention, the inner and outer thermoplastic resins adhered to both surfaces of the lead frame are used as the resin sealing of the semiconductor device. Resin plays the role of sealing, bonding and exterior of semiconductor devices, and other adhesive materials,
Since no exterior material is required, and no mismatch between other types of materials occurs, a highly reliable semiconductor package element and a three-dimensional semiconductor device can be obtained. Since it can be bonded to a semiconductor device, a mold such as a resin mold is not required, and it can be manufactured at low cost. Further, a thin semiconductor package element having a chip size close to the outer shape of the semiconductor device can be obtained by the thin flat lead frame and the thermoplastic resin. In addition, by using a thermoplastic resin,
Further, when a three-dimensional semiconductor device is configured by connecting in multiple stages,
Since bonding can be performed using the bonding characteristics of the thermoplastic resin generated in a specific temperature region, multi-stage connection can be easily performed with high strength by a simple reflow or thermocompression operation.

[Brief description of the drawings]

FIG. 1 is a vertical sectional side view of a semiconductor package element according to a first embodiment of the present invention.

FIG. 2 is a vertical sectional side view of a semiconductor package element according to a second embodiment of the present invention.

FIG. 3 is a vertical sectional side view of a three-dimensional semiconductor device according to a third embodiment of the present invention, wherein (a) shows a semiconductor package element and (b) shows a three-dimensional semiconductor device.

FIG. 4 is a vertical sectional side view of a three-dimensional semiconductor device according to a fourth embodiment of the present invention, wherein (a) shows a semiconductor package element and (b) shows a three-dimensional semiconductor device.

FIG. 5 is a process chart showing a method of manufacturing a semiconductor package element according to a fifth embodiment of the present invention.

FIG. 6 is a process chart showing a method for manufacturing a semiconductor package element according to a sixth embodiment of the present invention.

FIG. 7 is a process chart showing a method for manufacturing a semiconductor package element according to a seventh embodiment of the present invention.

FIG. 8 is a process chart showing a method of manufacturing a semiconductor package element according to an eighth embodiment of the present invention.

FIG. 9 is a vertical sectional side view of a conventional semiconductor package element for a three-dimensional semiconductor device.

FIG. 10 is a vertical sectional side view of a conventional three-dimensional semiconductor device.

[Explanation of symbols]

 Reference Signs List 10 semiconductor device 11 inner thermoplastic resin 12 lead frame 12a bent lead portion 13 outer thermoplastic resin 14 pad 15 bump 16 opening 30 lead frame body portion 31 inner lead portion A1, A2 semiconductor package element F flexible lead frame member 34 lead Frame structure

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 25/10 H01L 25/14 Z 25/11 25/18 (72) Inventor Yuzo Shimada Shiba, Minato-ku, Tokyo 5-7-1, NEC Corporation F-term (reference) 4J002 AA011 GF00 GQ05 4M109 AA01 BA01 CA05 CA22 DA04 DA10 EA12 FA06 5F061 AA01 BA01 BA05 CA05 CA22 CB13 DD14 DE03 5F067 AA01 AA02 AB04 BB04 CC02 CC05 BC05 DB01 DE01 DF20

Claims (14)

[Claims] 1. A semiconductor package element comprising a semiconductor device, a lead frame connected to the semiconductor device, and a sealing resin for sealing the semiconductor device, wherein the sealing resin is formed of a lead frame. A semiconductor package element comprising a thermoplastic resin adhered to both surfaces and the semiconductor device. 2. The semiconductor package device according to claim 1, wherein said lead frame is made of metal foil on which a circuit pattern is formed. 3. The lead frame has a lead frame main body formed of a frame-shaped metal sheet and an inner lead portion formed at a tip end thereof, and the thermoplastic resin is provided on both surfaces of the inner lead portion. 3. The semiconductor package device according to claim 1, wherein the semiconductor package device is bonded. 4. The lead frame and the thermoplastic resin on both surfaces thereof are bent along both ends of the semiconductor device, and the inner thermoplastic resin is bonded to the semiconductor device, and the end face of the lead frame is formed on the semiconductor device. 3. The device according to claim 1, wherein the device is exposed on the back side of the device.
Or the semiconductor package element according to 3. 5. The semiconductor device according to claim 1, wherein the lead frame is bent along the back surface of the semiconductor device to form a bent lead portion, and the bent lead portion is exposed on the back surface of the semiconductor device. The semiconductor package device according to claim 1. 6. The semiconductor package element according to claim 1, wherein the lead frame and the semiconductor device are connected via a conductive bump and a pad. 7. The semiconductor package device according to claim 1, wherein an opening exposing a part of the lead frame is formed on an upper surface of the thermoplastic resin. 8. A method for manufacturing a semiconductor package element comprising a semiconductor device, a lead frame connected to the semiconductor device, and a sealing resin for sealing the semiconductor device, the method comprising: forming a metal on which a circuit pattern is formed; Bonding the inner thermoplastic resin to the lead frame made of foil, forming a bump protruding from the inner thermoplastic resin on the lead frame, bonding the inner thermoplastic resin to the semiconductor device, and bonding the lead frame to the semiconductor device. Connecting the bump to the semiconductor device, bending and bonding the lead frame and the inner thermoplastic resin along both end surfaces of the semiconductor device, and bonding the outer thermoplastic resin to the lead frame. A method for manufacturing a semiconductor package element, comprising: 9. A method for manufacturing a semiconductor package element comprising a semiconductor device, a lead frame connected to the semiconductor device, and a sealing resin for sealing the semiconductor device, wherein the metal having a circuit pattern is formed. Bonding the inner and outer thermoplastic resins to both sides of the lead frame made of foil, and forming a bump protruding from the inner thermoplastic resin on the lead frame to form a flexible lead frame member; and Bonding a resin to the semiconductor device and connecting the bumps of the lead frame to the semiconductor device; and bending and bonding the flexible lead frame member along both end surfaces of the semiconductor device. Of manufacturing a semiconductor package element. 10. A method for manufacturing a semiconductor package element comprising a semiconductor device, a lead frame connected to the semiconductor device, and a sealing resin for sealing the semiconductor device, wherein a thermoplastic resin is applied to the metal foil. A step of bonding, a step of applying a resist to the metal foil, a step of performing exposure and development using a mask corresponding to the circuit pattern, and a step of forming a circuit pattern by etching and patterning the metal foil to form a lead frame. Forming, forming a bump on the lead frame, forming a plating layer on the bump side of the lead frame, bonding an inner thermoplastic resin on the plating layer and exposing the bump. And bonding the outer thermoplastic resin to the lead frame on the side opposite to the bumps. Forming a base member, bonding the inner thermoplastic resin to the semiconductor device, connecting the bump to the semiconductor device, and bending and bonding the flexible lead frame member along both end surfaces of the semiconductor device. A method for manufacturing a semiconductor package element, comprising: 11. A method of manufacturing a semiconductor package element comprising a semiconductor device, a lead frame connected to the semiconductor device, and a sealing resin for sealing the semiconductor device, wherein the lead frame main body is made of a metal sheet. Forming a thin inner lead portion in a portion of the portion located near the semiconductor device, and bonding a thermoplastic resin to both surfaces of the lead frame body portion and the inner lead portion,
Forming a lead frame structure by forming a bump on the inner surface of the inner lead portion, transporting the lead frame structure onto the semiconductor device, connecting the bump to a pad of the semiconductor device, A method for manufacturing a semiconductor package element, comprising cutting and separating a part and a lead frame main body part, and bonding the inner lead part to the semiconductor device. 12. A three-dimensional semiconductor device in which a plurality of semiconductor package elements according to claim 7 are stacked, wherein said lead frame exposed at an opening of said lower semiconductor package element and said upper semiconductor layer. A three-dimensional semiconductor device, wherein the lead frame exposed on the back side of the package element is electrically connected via an adhesive. 13. The three-dimensional semiconductor device according to claim 12, wherein a portion of the upper layer exposed on the back surface side of the semiconductor package element is a bent lead portion of the lead frame. 14. A method of manufacturing a three-dimensional semiconductor device in which a plurality of semiconductor package elements are stacked, wherein the plurality of semiconductor package elements according to claim 7 are overlapped with each other, and each of the semiconductor packages is formed by a reflow or thermocompression bonding method. A method for manufacturing a three-dimensional semiconductor device, comprising: mechanically joining elements; and melting the conductive connecting material applied to the opening to make an electrical connection.