JP2008011471A - Piezoelectric oscillator - Google Patents

Piezoelectric oscillator Download PDF

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JP2008011471A
JP2008011471A JP2006182558A JP2006182558A JP2008011471A JP 2008011471 A JP2008011471 A JP 2008011471A JP 2006182558 A JP2006182558 A JP 2006182558A JP 2006182558 A JP2006182558 A JP 2006182558A JP 2008011471 A JP2008011471 A JP 2008011471A
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semiconductor circuit
circuit component
piezoelectric
electrode
piezoelectric oscillator
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Riyouma Sasagawa
亮磨 笹川
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Kyocera Crystal Device Corp
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Kyocera Crystal Device Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a small-sized piezoelectric oscillator which is easily handled and also improved in productivity. <P>SOLUTION: In the piezoelectric oscillator constituted of a piezoelectric vibrator 14 and a semiconductor circuit component 37 housing in a sealed container 1 a piezoelectric vibrating chip 8 formed with an exciting electrode 12 on a piezoelectric blank 11, an electrode surface of the semiconductor circuit component 37 is packaged in a lower portion of the piezoelectric vibrator 14, an input/output terminal 9 of the piezoelectric vibrator 14 and the semiconductor circuit component 37 are directly electrically connected, and an electrode terminal 38 is drawn around from the electrode surface of the semiconductor circuit component 37 through a lead frame 31 to a rear side of the semiconductor circuit component 37. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、携帯用通信機器等の電子機器に用いられる圧電発振器に関するものである。   The present invention relates to a piezoelectric oscillator used in an electronic device such as a portable communication device.

従来より、携帯用通信機器等の電子機器に圧電発振器が用いられている。   Conventionally, piezoelectric oscillators have been used in electronic devices such as portable communication devices.

かかる従来の圧電発振器としては、例えば図4に示す如く、内部に図中には示されていないが、圧電振動片が収容されている第1の容器23を、キャビティー部25内に前記の圧電振動片の振動に基づいて発振出力を制御する半導体回路部品26やコンデンサ等の電子部品素子が収容されている第2の容器21上に取着させた構造のものが知られており、かかる圧電発振器をマザーボード等の外部配線基板上に載置させた上、第2の容器21の下面に設けられている電極端子を外部配線基板の配線にハンダ接合することにより外部配線基板上に実装される。   As such a conventional piezoelectric oscillator, for example, as shown in FIG. 4, the first container 23 in which a piezoelectric vibrating piece is accommodated is contained in the cavity portion 25, although not shown in the drawing. A structure having a structure attached to a second container 21 in which an electronic component element such as a semiconductor circuit component 26 or a capacitor for controlling an oscillation output based on vibration of a piezoelectric vibrating piece is accommodated is known. The piezoelectric oscillator is mounted on the external wiring board by placing the electrode terminal on the external wiring board such as a mother board and soldering the electrode terminals provided on the lower surface of the second container 21 to the wiring of the external wiring board. The

なお、第1の容器23や第2の容器21は、通常、セラミック材料によって形成されており、その内部や表面には配線導体が形成され、従来周知のセラミックグリーンシート積層法等を採用することにより製作される。   The first container 23 and the second container 21 are usually formed of a ceramic material, and a wiring conductor is formed inside or on the surface, and a conventionally known ceramic green sheet lamination method or the like is adopted. It is manufactured by.

また、前記半導体回路部品26の内部には、圧電振動片の温度特性に応じて作成された温度補償データに基づいて圧電発振器の発振周波数を補正するための温度補償回路が設けられており、圧電発振器を組み立てた後、上述の温度補償データを半導体回路部品26のメモリ内に格納すべく、第2の密閉容器21の下面や外側面等には温度補償データ書込用の温度補償制御端子27が設けられていた。この温度補償制御端子27に温度補償データ書込装置のプローブ針を当てて半導体回路部品26内のメモリに温度補償データを入力することにより、温度補償データが半導体回路部品26のメモリ内に格納される。
特開2004−228895号公報 なお、出願人は前記した先行技術文献情報で特定される先行技術文献以外には、本発明に関連する先行技術文献を、本件出願時までに発見するに至らなかった。
The semiconductor circuit component 26 is provided with a temperature compensation circuit for correcting the oscillation frequency of the piezoelectric oscillator based on temperature compensation data created according to the temperature characteristics of the piezoelectric vibrating piece. After assembling the oscillator, in order to store the temperature compensation data in the memory of the semiconductor circuit component 26, the temperature compensation control terminal 27 for writing the temperature compensation data is provided on the lower surface and the outer surface of the second sealed container 21. Was provided. The temperature compensation data is stored in the memory of the semiconductor circuit component 26 by applying the probe needle of the temperature compensation data writing device to the temperature compensation control terminal 27 and inputting the temperature compensation data into the memory in the semiconductor circuit component 26. The
JP, 2004-228895, A In addition to the prior art documents specified by the prior art document information described above, the applicant did not find prior art documents related to the present invention by the time of filing of the present application. .

しかしながら、圧電発振器が小型化されると第2の容器21内に収容される半導体回路部品26も小型化も必要となるが半導体回路部品26の小型化にも限界があった。よって、従来の第2の容器21の構造では半導体回路部品26を収納するのが困難となり、圧電発振器の小型化の障害となっていた。   However, when the piezoelectric oscillator is downsized, the semiconductor circuit component 26 accommodated in the second container 21 needs to be downsized, but there is a limit to downsizing of the semiconductor circuit component 26. Therefore, the conventional structure of the second container 21 makes it difficult to accommodate the semiconductor circuit component 26, which has been an obstacle to miniaturization of the piezoelectric oscillator.

本発明は上記欠点に鑑み考え出されたものであり、従ってその目的は、取り扱いが簡便で、かつ、生産性にも優れた小型の圧電発振器を提供することにある。   The present invention has been conceived in view of the above-described drawbacks. Accordingly, an object of the present invention is to provide a small piezoelectric oscillator that is easy to handle and excellent in productivity.

本発明の圧電発振器は、圧電素板に励振電極を形成した圧電振動片を密閉容器に収納した圧電振動子と半導体回路部品とで構成される圧電発振器において、前記圧電振動子の下部に前記半導体回路部品の電極面を搭載し、前記圧電振動子の入出力端と前記半導体回路部品は直接的に電気的接続が取られており、前記半導体回路部品の電極面からはリードフレームを介して前記半導体回路部品の裏面に電極端子が引き回されていることを特徴とする。 The piezoelectric oscillator according to the present invention is a piezoelectric oscillator including a piezoelectric vibrator in which a piezoelectric vibrating piece in which an excitation electrode is formed on a piezoelectric base plate is housed in a sealed container and a semiconductor circuit component, and the semiconductor below the piezoelectric vibrator. An electrode surface of the circuit component is mounted, and the input / output end of the piezoelectric vibrator and the semiconductor circuit component are directly electrically connected, and the electrode surface of the semiconductor circuit component is connected to the electrode surface via a lead frame. An electrode terminal is routed around the back surface of the semiconductor circuit component.

また、本発明の圧電発振器は上記構成において、圧電振動子と半導体回路部品とは導電部材により電気的な接続が取られていることを特徴とする圧電発振器。 The piezoelectric oscillator according to the present invention has the above-described configuration, wherein the piezoelectric vibrator and the semiconductor circuit component are electrically connected by a conductive member.

本発明の圧電発振器によれば、圧電素板に励振電極を形成した圧電振動片を密閉容器に収納した圧電振動子と、発振回路を形成した半導体回路部品とから構成する圧電発振器において、圧電振動子の下部に半導体回路部品の電極面を搭載し、圧電振動子の入出力端と半導体回路部品は直接的に電気的接続が取られており、半導体回路部品の電極面からはリードフレームを介して半導体回路部品の裏面に電極端子が引き回されていることから、従来構造の圧電発振器では必要であった半導体回路部品を収容するための容器を不要とすることが可能となる。   According to the piezoelectric oscillator of the present invention, in a piezoelectric oscillator composed of a piezoelectric vibrator in which a piezoelectric vibrating piece having an excitation electrode formed on a piezoelectric base plate is housed in a sealed container, and a semiconductor circuit component having an oscillation circuit, The electrode surface of the semiconductor circuit component is mounted on the lower part of the element, and the input / output ends of the piezoelectric vibrator and the semiconductor circuit component are directly connected to each other, and the electrode surface of the semiconductor circuit component is connected via a lead frame. Thus, since the electrode terminals are routed around the back surface of the semiconductor circuit component, it is possible to eliminate the need for a container for housing the semiconductor circuit component, which is necessary for a piezoelectric oscillator having a conventional structure.

以下、本発明を添付図面に基づいて詳細に説明する。なお、各図においての同一の符号は同じ対象を示すものとする。   Hereinafter, the present invention will be described in detail with reference to the accompanying drawings. In addition, the same code | symbol in each figure shall show the same object.

図1は本発明の実施形態にかかる圧電発振器の断面図である。図1に図示する圧電発振器は大略的に言って、密閉容器1と、圧電振動片8、半導体回路部品37とで構成されている。図1に図示する圧電発振器は、キャビティー部10に圧電振動片8を収容した密閉容器1に、密閉容器1の底面の四隅部に入出力端9が設けられている。入出力端9には密閉容器1の下面に半導体回路部品37を搭載した構造を有している。また、密閉容器1の入出力端9と半導体回路部品37は直接的に電気的接続が取られており、半導体回路部品37の電極面からはリードフレーム31を介して半導体回路部品37の裏面に電極端子38が引き回されている構造となっている。   FIG. 1 is a sectional view of a piezoelectric oscillator according to an embodiment of the present invention. The piezoelectric oscillator shown in FIG. 1 generally includes a hermetic container 1, a piezoelectric vibrating piece 8, and a semiconductor circuit component 37. In the piezoelectric oscillator illustrated in FIG. 1, input / output terminals 9 are provided at four corners of the bottom surface of the sealed container 1 in the sealed container 1 in which the piezoelectric vibrating piece 8 is accommodated in the cavity portion 10. The input / output end 9 has a structure in which a semiconductor circuit component 37 is mounted on the lower surface of the sealed container 1. Further, the input / output end 9 of the sealed container 1 and the semiconductor circuit component 37 are directly electrically connected, and the electrode surface of the semiconductor circuit component 37 is connected to the back surface of the semiconductor circuit component 37 via the lead frame 31. The electrode terminal 38 is routed around.

図2は図3のリードフレーム31から切断された1個の半導体回路部品37の電極面の上面図を示したものである。また、図3はリードフレーム31に半導体回路部品37を搭載する前の上面図である。   FIG. 2 is a top view of the electrode surface of one semiconductor circuit component 37 cut from the lead frame 31 of FIG. FIG. 3 is a top view before the semiconductor circuit component 37 is mounted on the lead frame 31.

図1において密閉容器1は、例えば、ガラス−セラミック、アルミナセラミックス等のセラミック材料から成る基板2、基板2と同様のセラミック材料から成る側壁3、42アロイやコパール、リン青銅等から成る蓋体4から成り、前記基板2の上面に側壁3を取着させ、その上面に蓋体4を載置し固定させることによって密閉容器1が構成され、側壁3の内側に位置する基板2の上面に導電性接着剤13を介して圧電振動片8が実装される。密閉容器1はその内部に、具体的には、基板2の上面と側壁3の内面と蓋体4の下面とで囲まれるキャビティー部10内に圧電振動片8を収容して気密封止するためのものである。   In FIG. 1, a sealed container 1 includes, for example, a substrate 2 made of a ceramic material such as glass-ceramic and alumina ceramic, a side wall 3 made of a ceramic material similar to the substrate 2, and a lid 4 made of alloy, copal, phosphor bronze, or the like. The side wall 3 is attached to the upper surface of the substrate 2, and the lid 4 is placed and fixed on the upper surface of the substrate 2 to form the hermetic container 1, and the upper surface of the substrate 2 located inside the side wall 3 is electrically conductive. The piezoelectric vibrating piece 8 is mounted via the adhesive 13. The hermetic container 1 accommodates the piezoelectric vibrating reed 8 in its inside, specifically, in a cavity portion 10 surrounded by the upper surface of the substrate 2, the inner surface of the side wall 3, and the lower surface of the lid 4, and hermetically seals. Is for.

一方、前記密閉容器1のキャビティー部10に収容される圧電振動片8は、所定の結晶軸でカットした圧電振動片8の両主面に一対の励振電極12を被着・形成してなり、外部からの変動電圧が一対の励振電極12を介して圧電振動片8に印加されると、所定の周波数で厚みすべり振動を起こす。   On the other hand, the piezoelectric vibrating reed 8 accommodated in the cavity portion 10 of the sealed container 1 is formed by attaching and forming a pair of excitation electrodes 12 on both main surfaces of the piezoelectric vibrating reed 8 cut along a predetermined crystal axis. When a variable voltage from the outside is applied to the piezoelectric vibrating piece 8 via the pair of excitation electrodes 12, thickness shear vibration is caused at a predetermined frequency.

また一方で図1、図2に図示するように、上述した基板2の下面には、四隅部に入出力端9が形成されている。これら四隅部の入出力端9に対応する位置には、矩形状に形成されたフリップチップ型の半導体回路部品37の接続端子33が形成されており、半導体回路部品37の接続端子33と基板2の入出力端9とは導電性接着剤36を介して接続されている。ここで半導体回路部品37の電極面の配線は半導体回路部品37の側面のリードフレーム31を経由して半導体回路部品37の裏面の電極端子38と対応する電極同士が電気的に接続されている。また、図2に示すように半導体回路部品37の側面には温度補償制御端子34が形成されている。   On the other hand, as shown in FIGS. 1 and 2, input / output terminals 9 are formed at the four corners on the lower surface of the substrate 2 described above. At positions corresponding to the input / output terminals 9 at the four corners, connection terminals 33 of flip-chip type semiconductor circuit components 37 formed in a rectangular shape are formed, and the connection terminals 33 of the semiconductor circuit components 37 and the substrate 2 are formed. The input / output terminal 9 is connected via a conductive adhesive 36. Here, in the wiring on the electrode surface of the semiconductor circuit component 37, the electrodes corresponding to the electrode terminals 38 on the back surface of the semiconductor circuit component 37 are electrically connected via the lead frame 31 on the side surface of the semiconductor circuit component 37. Further, as shown in FIG. 2, a temperature compensation control terminal 34 is formed on the side surface of the semiconductor circuit component 37.

ここで半導体回路部品37はその電極面に、周囲の温度状態を検知する感温素子、圧電振動片8の温度特性を補償する温度補償制御端子34を有し、温度補償制御端子34で内部メモリーに書き込まれた温度補償データに基づいて前記圧電振動片8の振動特性を温度変化に応じて補正する温度補償回路、温度補償回路に接続されて所定の発振出力を生成する発振回路等が設けられており、発振回路で生成された発振出力は、外部に出力された後、例えばクロック信号等の基準信号として利用されることとなる。ここで圧電振動片8と半導体回路部品37は図1に図示する基板2の内層に設けられたメタライズ配線15により接続されている。   Here, the semiconductor circuit component 37 has, on its electrode surface, a temperature sensing element that detects the ambient temperature state, and a temperature compensation control terminal 34 that compensates for the temperature characteristics of the piezoelectric vibrating piece 8. Are provided with a temperature compensation circuit that corrects the vibration characteristics of the piezoelectric vibrating piece 8 according to a temperature change based on the temperature compensation data written in, and an oscillation circuit that is connected to the temperature compensation circuit and generates a predetermined oscillation output. The oscillation output generated by the oscillation circuit is output to the outside and then used as a reference signal such as a clock signal. Here, the piezoelectric vibrating piece 8 and the semiconductor circuit component 37 are connected by a metallized wiring 15 provided in the inner layer of the substrate 2 shown in FIG.

また、図3は本発明の実施形態である圧電振動子14のリードフレーム31を集合状態から切断する前の上面図である。   FIG. 3 is a top view before the lead frame 31 of the piezoelectric vibrator 14 according to the embodiment of the present invention is cut from the assembled state.

次に上述した圧電発振器の製造方法について、本発明の実施形態である図2、図3を用いて説明する。 まず、図3に図示するように、縦m列×横n行(m、nは2以上の自然数)のマトリクス状に配列された集合状態のリードフレーム31を準備する。次に、図3に点線で図示するようにリードフレーム31上にハンダバンプ32が形成された半導体回路部品37を搭載する。その後リフロ炉等を通過させることで半導体回路部品37のハンダバンプ32とリードフレーム31とを電気的に接続する。次にリードフレーム31を図2に示すように切断する。その後、温度補償制御端子34と電極端子38を所定の位置となるように折り曲げる。
これにより、温度補償制御端子34は半導体回路部品37の側面に配置され、電極端子38は、半導体回路部品37の裏面に配置され形成される。 そして、最後にリードフレーム31の配線された半導体回路部品37の接続端子33と圧電振動子14の入出力端9とを導電部材36で電気的に接続することで本発明の圧電発振器が完成する。
Next, a manufacturing method of the above-described piezoelectric oscillator will be described with reference to FIGS. 2 and 3 which are embodiments of the present invention. First, as shown in FIG. 3, a lead frame 31 in an assembled state arranged in a matrix of m columns × n rows (m and n are natural numbers of 2 or more) is prepared. Next, a semiconductor circuit component 37 in which solder bumps 32 are formed on the lead frame 31 as shown by dotted lines in FIG. 3 is mounted. Thereafter, the solder bump 32 of the semiconductor circuit component 37 and the lead frame 31 are electrically connected by passing through a reflow furnace or the like. Next, the lead frame 31 is cut as shown in FIG. Thereafter, the temperature compensation control terminal 34 and the electrode terminal 38 are bent so as to be in a predetermined position.
Accordingly, the temperature compensation control terminal 34 is disposed on the side surface of the semiconductor circuit component 37, and the electrode terminal 38 is disposed and formed on the back surface of the semiconductor circuit component 37. Finally, the connection terminal 33 of the semiconductor circuit component 37 wired on the lead frame 31 and the input / output end 9 of the piezoelectric vibrator 14 are electrically connected by the conductive member 36 to complete the piezoelectric oscillator of the present invention. .

そして、半導体回路部品37は、その電極面に周囲の温度状態を検知する感温素子や圧電振動片8の温度特性を補償する温度補償データを有し、温度補償データに基づいて圧電振動片8の振動特性を温度変化に応じて補正する温度補償回路を有する半導体回路部品37へ、圧電発振器の仕様を所望の数値となるように、温度補償制御端子34よりビットデータを入力し温度補償データの書き込みを行う。   The semiconductor circuit component 37 has temperature compensation data for compensating the temperature characteristics of the temperature sensing element for detecting the ambient temperature state and the piezoelectric vibrating piece 8 on its electrode surface, and the piezoelectric vibrating piece 8 based on the temperature compensation data. The bit data is input from the temperature compensation control terminal 34 to the semiconductor circuit component 37 having a temperature compensation circuit that corrects the vibration characteristics of the piezoelectric oscillator according to the temperature change so that the specification of the piezoelectric oscillator becomes a desired numerical value. Write.

ここで、本発明の特徴部分は図1に図示するように、圧電振動子14の入出力端9と直接半導体回路部品37の接続端子33を電気的に接続し、半導体回路部品37の電極面からはリードフレーム31を介して半導体回路部品37の裏面に電極端子38が引き回されている点にある。これにより、圧電発振器の更なる小型化が進展し、圧電振動子14と半導体回路部品37が該同サイズになったとしても、小型の圧電発振器を製作可能となる。   Here, the characteristic part of the present invention is that, as shown in FIG. 1, the input / output end 9 of the piezoelectric vibrator 14 and the connection terminal 33 of the semiconductor circuit component 37 are electrically connected, and the electrode surface of the semiconductor circuit component 37 is electrically connected. The electrode terminal 38 is routed around the back surface of the semiconductor circuit component 37 via the lead frame 31. As a result, further miniaturization of the piezoelectric oscillator progresses, and even if the piezoelectric vibrator 14 and the semiconductor circuit component 37 have the same size, a small piezoelectric oscillator can be manufactured.

また、上述したように、リードフレーム31の集合状態で圧電発振器の一連の組み立て作業を完了できるので圧電発振器の生産性の向上が可能となる。 Further, as described above, since a series of assembly operations of the piezoelectric oscillator can be completed with the assembled state of the lead frames 31, the productivity of the piezoelectric oscillator can be improved.

なお、本発明は上述の実施形態に限定されるものではなく、本発明の要旨を逸脱しない範囲において種々の変更、改良等が可能である。 In addition, this invention is not limited to the above-mentioned embodiment, A various change, improvement, etc. are possible in the range which does not deviate from the summary of this invention.

例えば上述の実施形態においては、半導体回路部品37の裏面の電極端子38が直接外部配線基板に接続される構造となっているが、これに変えて、電極端子38を台座等を介して外部配線基板側に接続する構造としても構わない。この場合も本発明の技術的範囲に含まれることは言うまでも無い。 For example, in the above-described embodiment, the electrode terminal 38 on the back surface of the semiconductor circuit component 37 is directly connected to the external wiring board. Instead, the electrode terminal 38 is connected to the external wiring via a pedestal or the like. It does not matter as a structure connected to the substrate side. Needless to say, this case is also included in the technical scope of the present invention.

本発明の実施形態にかかる圧電発振器の概略の断面図である。1 is a schematic cross-sectional view of a piezoelectric oscillator according to an embodiment of the present invention. 本発明のリードフレームから切断された1個の半導体回路部品の上面図である。It is a top view of one semiconductor circuit component cut | disconnected from the lead frame of this invention. 本発明の実施形態に用いられるリードフレームの集合状態を示す概略の上面図である。FIG. 3 is a schematic top view showing an assembly state of lead frames used in the embodiment of the present invention. 従来の圧電発振器の概略の断面図である。It is a schematic sectional drawing of the conventional piezoelectric oscillator.

符号の説明Explanation of symbols

1・・・密閉容器
2・・・基板
3・・・側壁
4・・・蓋体
8・・・圧電振動片
9・・・入出力端
10・・・キャビティー部
11・・・圧電素板
12・・・励振電極
13・・・導電性接着剤
14・・・圧電振動子
15・・・メタライズ配線
31・・・リードフレーム
32・・・ハンダバンプ
33・・・接続端子
34・・・温度補償制御端子
36・・・導電部材
37・・・半導体回路部品
38・・・電極端子
DESCRIPTION OF SYMBOLS 1 ... Sealed container 2 ... Board | substrate 3 ... Side wall 4 ... Cover body 8 ... Piezoelectric vibrating piece 9 ... Input / output end 10 ... Cavity part 11 ... Piezoelectric base plate 12 ... Excitation electrode 13 ... Conductive adhesive 14 ... Piezoelectric vibrator
DESCRIPTION OF SYMBOLS 15 ... Metallized wiring 31 ... Lead frame 32 ... Solder bump 33 ... Connection terminal 34 ... Temperature compensation control terminal 36 ... Conductive member 37 ... Semiconductor circuit component 38 ... Electrode terminal

Claims (2)

圧電素板に励振電極を形成した圧電振動片を密閉容器に収納した圧電振動子と半導体回路部品とで構成される圧電発振器において、
前記圧電振動子の下部に前記半導体回路部品の電極面を搭載し、前記圧電振動子の入出力端と前記半導体回路部品は直接的に電気的接続が取られており、前記半導体回路部品の電極面からはリードフレームを介して前記半導体回路部品の裏面に電極端子が引き回されていることを特徴とする圧電発振器。
In a piezoelectric oscillator composed of a piezoelectric vibrator and a semiconductor circuit component in which a piezoelectric vibrating piece in which an excitation electrode is formed on a piezoelectric element plate is housed in a sealed container,
The electrode surface of the semiconductor circuit component is mounted below the piezoelectric vibrator, and the input / output end of the piezoelectric vibrator and the semiconductor circuit component are directly connected to each other, and the electrode of the semiconductor circuit component An electrode terminal is routed from the surface to the back surface of the semiconductor circuit component through a lead frame.
請求項1記載の圧電振動子と半導体回路部品とは導電部材により電気的な接続が取られていることを特徴とする圧電発振器。
2. The piezoelectric oscillator according to claim 1, wherein the piezoelectric vibrator and the semiconductor circuit component are electrically connected by a conductive member.
JP2006182558A 2006-06-30 2006-06-30 Piezoelectric oscillator Pending JP2008011471A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8760655B2 (en) * 2010-05-19 2014-06-24 Sharp Kabushiki Kaisha Die inspection method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001196504A (en) * 2000-01-07 2001-07-19 Nec Corp Packaged semiconductor element, three-dimensional semiconductor device and method of manufacture
JP2005117188A (en) * 2003-10-03 2005-04-28 Toyo Commun Equip Co Ltd Surface mount piezoelectric oscillator and manufacturing method thereof
JP2006060281A (en) * 2004-08-17 2006-03-02 Seiko Epson Corp Piezoelectric oscillator

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001196504A (en) * 2000-01-07 2001-07-19 Nec Corp Packaged semiconductor element, three-dimensional semiconductor device and method of manufacture
JP2005117188A (en) * 2003-10-03 2005-04-28 Toyo Commun Equip Co Ltd Surface mount piezoelectric oscillator and manufacturing method thereof
JP2006060281A (en) * 2004-08-17 2006-03-02 Seiko Epson Corp Piezoelectric oscillator

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8760655B2 (en) * 2010-05-19 2014-06-24 Sharp Kabushiki Kaisha Die inspection method

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