JP2001181820A5 - - Google Patents

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Publication number
JP2001181820A5
JP2001181820A5 JP1999372088A JP37208899A JP2001181820A5 JP 2001181820 A5 JP2001181820 A5 JP 2001181820A5 JP 1999372088 A JP1999372088 A JP 1999372088A JP 37208899 A JP37208899 A JP 37208899A JP 2001181820 A5 JP2001181820 A5 JP 2001181820A5
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JP
Japan
Prior art keywords
reaction chamber
filament
thin film
manufacturing apparatus
evaporation
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Application number
JP1999372088A
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English (en)
Japanese (ja)
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JP4364380B2 (ja
JP2001181820A (ja
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Priority to JP37208899A priority Critical patent/JP4364380B2/ja
Priority claimed from JP37208899A external-priority patent/JP4364380B2/ja
Publication of JP2001181820A publication Critical patent/JP2001181820A/ja
Publication of JP2001181820A5 publication Critical patent/JP2001181820A5/ja
Application granted granted Critical
Publication of JP4364380B2 publication Critical patent/JP4364380B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP37208899A 1999-12-28 1999-12-28 薄膜作製装置及び薄膜作製方法 Expired - Fee Related JP4364380B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP37208899A JP4364380B2 (ja) 1999-12-28 1999-12-28 薄膜作製装置及び薄膜作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP37208899A JP4364380B2 (ja) 1999-12-28 1999-12-28 薄膜作製装置及び薄膜作製方法

Publications (3)

Publication Number Publication Date
JP2001181820A JP2001181820A (ja) 2001-07-03
JP2001181820A5 true JP2001181820A5 (cg-RX-API-DMAC10.html) 2007-02-15
JP4364380B2 JP4364380B2 (ja) 2009-11-18

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ID=18499835

Family Applications (1)

Application Number Title Priority Date Filing Date
JP37208899A Expired - Fee Related JP4364380B2 (ja) 1999-12-28 1999-12-28 薄膜作製装置及び薄膜作製方法

Country Status (1)

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JP (1) JP4364380B2 (cg-RX-API-DMAC10.html)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7374976B2 (en) 2002-11-22 2008-05-20 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating thin film transistor
US7737632B2 (en) * 2004-04-27 2010-06-15 Fujifilm Corporation Organic EL element with lamination structure and its manufacturing method
JP4782037B2 (ja) 2006-03-03 2011-09-28 キヤノンアネルバ株式会社 磁気抵抗効果素子の製造方法及び製造装置
JP2011195850A (ja) * 2010-03-17 2011-10-06 Fujifilm Corp 成膜方法およびガスバリアフィルム
JP5678455B2 (ja) * 2010-03-30 2015-03-04 凸版印刷株式会社 有機ｅｌ素子の製造方法及び有機ｅｌパネルの製造方法

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