JP2001107028A - Abrasive material and abrasion process - Google Patents
Abrasive material and abrasion processInfo
- Publication number
- JP2001107028A JP2001107028A JP28526399A JP28526399A JP2001107028A JP 2001107028 A JP2001107028 A JP 2001107028A JP 28526399 A JP28526399 A JP 28526399A JP 28526399 A JP28526399 A JP 28526399A JP 2001107028 A JP2001107028 A JP 2001107028A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- abrasive
- glass
- water
- average particle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Surface Treatment Of Glass (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、特にガラスの研磨
用材料として優れた特徴を持つ組成式ＡＢＯ3で表され
る酸化物に関するものである。ガラス素材の用途とし
て、光ディスク基板、磁気ディスク、液晶ＴＶ用カラー
フィルター、時計板、電卓、カメラレンズ、太陽電池の
ディスプレイ、光学部品用の各種レンズやフィルターが
ある。そして、これらのガラス基板は、表面を高精度に
研磨することが要求される。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an oxide represented by the composition formula ABO 3 which has excellent characteristics particularly as a material for polishing glass. Applications of glass materials include optical disc substrates, magnetic discs, color filters for liquid crystal TVs, clocks, calculators, camera lenses, solar cell displays, and various lenses and filters for optical components. These glass substrates are required to have their surfaces polished with high precision.
【０００２】[0002]
【従来の技術】従来、ガラス基板の研磨にはシリカや酸
化セリウムが研磨材として用いられる。シリカ研磨材は
単分散、球状の砥粒であるため研磨面の表面粗さやスク
ラッチなどが少なく研磨面の状態は良いが、研磨速度が
遅いという欠点がある。酸化セリウムを用いた場合は研
磨速度はシリカ研磨材より数倍速くなるが、スラリー中
では酸化セリウムの分散及び流動性が悪く強固に凝集し
た砥粒を含むためこれが、研磨面を傷つけたスクラッチ
を発生させる原因となる場合があった。2. Description of the Related Art Conventionally, silica or cerium oxide has been used as an abrasive for polishing a glass substrate. Since the silica abrasive is a monodispersed, spherical abrasive, the surface of the polished surface has little surface roughness or scratches, and the condition of the polished surface is good. However, there is a disadvantage that the polishing rate is low. When cerium oxide is used, the polishing rate is several times faster than that of silica abrasive.However, in the slurry, cerium oxide has poor dispersion and fluidity and contains strongly agglomerated abrasive grains, which causes scratches on the polished surface to be damaged. In some cases, it could cause it to occur.
【０００３】また、メカノケミカル研磨によるシリコン
ウエハや半導体ウエハ等の研磨ではシリカ系研磨材を分
散化するために添加する水酸化ナトリウム、水酸化カリ
ウム、水酸化リチウム等のアルカリ金属が研磨時に被研
磨物表面中に侵入して汚染し、被研磨物の電気的特性の
劣化を引き起こすという欠点があった。In the polishing of silicon wafers and semiconductor wafers by mechanochemical polishing, an alkali metal such as sodium hydroxide, potassium hydroxide or lithium hydroxide added to disperse a silica-based abrasive is polished during polishing. There is a drawback that it penetrates into and contaminates the surface of the workpiece, causing deterioration of the electrical characteristics of the workpiece.
【０００４】[0004]
【発明が解決しようとする課題】本発明による研磨材は
研磨速度がシリカ研磨材よりも速く、スクラッチ傷の発
生がない優れた特徴を持つ新規なものである。The abrasive according to the present invention is a novel abrasive having a polishing rate higher than that of a silica abrasive and having excellent characteristics without scratching.
【０００５】[0005]
【課題を解決するための手段】すなわち、本発明の研磨
材は基本的な手段として、Ａ元素がＬｉ，Ｍｇ，Ｃａ，
Ｓｒ，Ｂａ，Ｚｎ，Ａｌ，Ｆｅから選ばれる１種あるい
は２種以上よりなり、Ｂ元素がＴｉ，Ｚｒ，Ｈｆ，Ｓ
ｎ，Ｓｉ，Ｃｒ，Ｍｎ，Ｃｏから選ばれる１種あるいは
２種以上よりなる組成式ＡＢＯ3で表される酸化物から
なるものである。この研磨材は、平均粒子径が２μｍ以
下であり、最大粒子径が平均粒子径の４倍以下であるも
のである。That is, the abrasive of the present invention has a basic means in which the element A contains Li, Mg, Ca,
One or more selected from Sr, Ba, Zn, Al, and Fe, and the B element is Ti, Zr, Hf, S
It is made of an oxide represented by a composition formula ABO 3 composed of one or more selected from n, Si, Cr, Mn, and Co. This abrasive has an average particle size of 2 μm or less and a maximum particle size of 4 times or less the average particle size.
【０００６】また、本発明の研磨材は、前記の研磨材を
水に分散した、コロイド状、スラリー状もしくはペース
ト状の水分散研磨材とすることができ、前記の水分散研
磨材が分散安定剤を１種あるいは２種以上を含んでいる
ことを特徴とする。そして本発明の研磨方法は、前記の
水分散研磨材を用いてガラスを研磨するものである。Further, the abrasive of the present invention can be a colloidal, slurry-like or paste-like water-dispersed abrasive in which the above-mentioned abrasive is dispersed in water. It is characterized in that it contains one or more agents. The polishing method of the present invention is for polishing glass using the above-mentioned water-dispersed abrasive.
【０００７】[0007]
【発明の実施の形態】本発明による研磨材はＡＢＯ3で
表される酸化物であり、Ａ元素がＡ元素がＬｉ，Ｍｇ，
Ｃａ，Ｓｒ，Ｂａ，Ｚｎ，Ａｌ，Ｆｅから選ばれる１種
あるいは２種以上よりなり、Ｂ元素がＴｉ，Ｚｒ，Ｈ
ｆ，Ｓｎ，Ｓｉ，Ｃｒ，Ｍｎ，Ｃｏから選ばれる１種あ
るいは２種以上よりなるものである。Ａ元素は、Ｂａ，
Ｃａ，Ｍｇ，Ｓｒが好ましく、Ｂ元素はＴｉ，Ｚｒが好
ましい。このＡＢＯ3のモル比は、Ａ／Ｂ＝０．８〜
１．２、好ましくは０．９〜１．１である。BEST MODE FOR CARRYING OUT THE INVENTION The abrasive according to the present invention is an oxide represented by ABO 3 , wherein the A element is Li, Mg,
One or more selected from Ca, Sr, Ba, Zn, Al and Fe, and the B element is Ti, Zr, H
f, Sn, Si, Cr, Mn, and one or more selected from Co. Element A is Ba,
Ca, Mg, and Sr are preferable, and the B element is preferably Ti and Zr. The molar ratio of ABO 3 is A / B = 0.8 to
1.2, preferably 0.9 to 1.1.
【０００８】本発明の酸化物は、平均粒子径が２μｍを
越える場合は、精密に研磨することができなくなり好ま
しくない。また、平均粒子径は、電子顕微鏡写真から測
定され、測定個数は多ければ多いほどよいが、写真での
測定上、粒子２００個以上であればよい。When the oxide of the present invention has an average particle diameter of more than 2 μm, it cannot be polished precisely, which is not preferable. The average particle diameter is measured from an electron micrograph, and the larger the number of the measured particles, the better. However, from the measurement by the photograph, the average particle diameter may be 200 particles or more.
【０００９】図１は、本発明の研磨材の電子顕微鏡写真
である。また、電子顕微鏡写真から測定される粒子の最
大粒子径が平均粒子径の４倍以下であることが好まし
い。平均粒子径が、例えば１μｍであった場合は、最大
粒子径は４μｍ以下である必要がある。FIG. 1 is an electron micrograph of the abrasive of the present invention. Further, it is preferable that the maximum particle diameter of the particles measured from the electron micrograph is not more than four times the average particle diameter. When the average particle diameter is, for example, 1 μm, the maximum particle diameter needs to be 4 μm or less.
【００１０】本発明の研磨材用の酸化物は、水に分散し
たコロイド状、スラリー状もしくはペースト状にして水
分散研磨材として使用する。コロイド状、スラリー状も
しくはペースト状とは、研磨材に対する水の量により区
別されるものである。水分散研磨材の研磨材の固形分量
については、特に制限されるものではないが、好ましい
固形分量としては０．１〜２０重量部、更には１〜１５
重量部程度である。固形分量が少ないと研磨加工速度が
低下し過ぎて実用性に欠け、また、固形分量が多すぎる
と研磨加工に寄与していない粒子が多くなり、材料コス
トが上昇して好ましくない。The abrasive for an abrasive of the present invention is used as a water-dispersed abrasive in the form of a colloid, a slurry or a paste dispersed in water. A colloid, a slurry, or a paste is distinguished by the amount of water with respect to the abrasive. The solid content of the abrasive in the water-dispersed abrasive is not particularly limited, but is preferably 0.1 to 20 parts by weight, more preferably 1 to 15 parts by weight.
It is about parts by weight. If the solid content is too small, the polishing rate will be too low, resulting in lack of practicality. If the solid content is too large, particles not contributing to the polishing process will increase, and the material cost will increase, which is not preferable.
【００１１】また、本発明の水分散研磨材は、水の他に
分散安定剤を適宜選んで添加したものであってよい。分
散安定剤とは研磨材の分散状態を調整するために添加す
るものでアルカリ、無機塩類、界面活性剤などが含まれ
る。The water-dispersed abrasive of the present invention may be one obtained by appropriately selecting and adding a dispersion stabilizer in addition to water. The dispersion stabilizer is added to adjust the dispersion state of the abrasive, and includes an alkali, an inorganic salt, a surfactant and the like.
【００１２】本発明の研磨方法とは、上記酸化物を含む
水分散研磨材を用いて鏡面仕上げをするものであり、所
定制度の鏡面に研磨した物品を製造可能にする。そし
て、研磨時には、研磨パット上に水分散研磨材を供給し
ながらシリコンウエハあるいはシリコンデバイスウエハ
上に形成された絶縁膜および金属配線、石英、水晶、Ｌ
ＣＤ用ガラス基板、光ディスク基板、磁気ディスク、液
晶ＴＶ用カラーフィルター、時計板、電卓、カメラレン
ズ、太陽電池のディスプレイ、光学部品用の各種レンズ
やフィルター等の表面を鏡面研磨する。上述のように本
発明の研磨材を使用すると、研磨速度が向上するばかり
でなく研磨全体にわたって、均一な平滑面が得られる。The polishing method of the present invention is to perform mirror finishing using the water-dispersed abrasive containing the above-mentioned oxide, and it is possible to manufacture an article polished to a predetermined mirror surface. Then, at the time of polishing, an insulating film and metal wiring formed on a silicon wafer or a silicon device wafer, metal wiring, quartz, crystal, L
The surfaces of glass substrates for CDs, optical disk substrates, magnetic disks, color filters for liquid crystal TVs, clocks, calculators, camera lenses, solar cell displays, various lenses and filters for optical components, etc. are mirror-polished. As described above, when the abrasive of the present invention is used, not only the polishing rate is improved, but also a uniform smooth surface is obtained over the entire polishing.
【００１３】（実施例） ［実施例１］蓚酸塩法で作製した、平均粒径０．４μ
ｍ、最大粒子径０．７μｍのチタン酸バリウム（ＢａＴ
ｉＯ3）５ｗｔ％を含有する水性研磨液を調整し、ガラ
ス研磨試験を行った。 ・研磨条件 使用ガラス材：ガラスサブストレート（直径１００ｍｍ
青板ガラス） 定盤径：２００ｍｍ 定盤回転数：１５０ｒｐｍ ワーク自転数：１００ｒｐｍ 研磨パッド：ポリテックスＤＧ スラリー流量：２０ｍｌ／ｍｉｎ ・結果 研磨前と研磨後の重量を測定し、前後の重量減を厚みに
換算し、１分間あたりの研磨速度を算出した。ガラスデ
ィスクを１％ＨＦ溶液で２分間エッチングし、純水で、
洗浄、乾燥後、集光ランプで傷を観察する。そのときの
スクラッチの本数を数える。 研磨速度：０．３５μｍ／ｍｉｎ 表面状態：スクラッチ傷は観察されなかった。(Example) [Example 1] An average particle diameter of 0.4 μm produced by an oxalate method.
m, barium titanate having a maximum particle diameter of 0.7 μm (BaT
An aqueous polishing solution containing 5 wt% of iO 3 ) was prepared and a glass polishing test was performed. Polishing conditions Glass material: glass substrate (diameter 100 mm)
Blue plate glass) Platen diameter: 200 mm Platen rotation speed: 150 rpm Work rotation number: 100 rpm Polishing pad: Polytex DG Slurry flow rate: 20 ml / min Result The weight before and after polishing is measured, and the weight loss before and after polishing is measured as the thickness. And the polishing rate per minute was calculated. Etch the glass disk with 1% HF solution for 2 minutes, and with pure water,
After washing and drying, observe the wound with a condenser lamp. Count the number of scratches at that time. Polishing rate: 0.35 μm / min Surface condition: No scratch was observed.
【００１４】［実施例２］固相法で作製した、平均粒径
０．７μｍ、最大粒子径１．５μｍのチタン酸バリウム
（ＢａＴｉＯ3）５ｗｔ％を含有する水性研磨液を調整
し、ガラス研磨試験を行った。 ・研磨条件 使用ガラス材：ガラスサブストレート（直径１００ｍｍ
青板ガラス） 定盤径：２００ｍｍ 定盤回転数：１５０ｒｐｍ ワーク自転数：１００ｒｐｍ 研磨パッド：ポリテックスＤＧ スラリー流量：２０ｍｌ／ｍｉｎ ・結果 研磨前と研磨後の重量を測定し、前後の重量減を厚みに
換算し、１分間あたりの研磨速度を算出した。ガラスデ
ィスクを１％ＨＦ溶液で２分間エッチングし、純水で、
洗浄、乾燥後、集光ランプで傷を観察する。そのときの
スクラッチの本数を数える。 研磨速度：０．４１μｍ／ｍｉｎ 表面状態：スクラッチ傷は観察されなかった。Example 2 An aqueous polishing solution prepared by a solid phase method and containing 5 wt% of barium titanate (BaTiO 3 ) having an average particle size of 0.7 μm and a maximum particle size of 1.5 μm was prepared, and glass polishing was performed. The test was performed. Polishing conditions Glass material: glass substrate (diameter 100 mm)
Blue plate glass) Platen diameter: 200 mm Platen rotation speed: 150 rpm Work rotation number: 100 rpm Polishing pad: Polytex DG Slurry flow rate: 20 ml / min Result The weight before and after polishing is measured, and the weight loss before and after polishing is measured as the thickness. And the polishing rate per minute was calculated. Etch the glass disk with 1% HF solution for 2 minutes, and with pure water,
After washing and drying, observe the wound with a condenser lamp. Count the number of scratches at that time. Polishing rate: 0.41 μm / min Surface condition: No scratch was observed.
【００１５】［実施例３］固相法で作製した、平均粒径
０．７μｍ、最大粒子径３．５μｍのジルコン酸バリウ
ム（ＢａＴｉＯ3）５ｗｔ％を含有する水性研磨液を調
整し、ガラス研磨試験を行った。 ・研磨条件 使用ガラス材：ガラスサブストレート（直径１００ｍｍ
青板ガラス） 定盤径：２００ｍｍ 定盤回転数：１５０ｒｐｍ ワーク自転数：１００ｒｐｍ 研磨パッド：ポリテックスＤＧ スラリー流量：２０ｍｌ／ｍｉｎ ・結果 研磨前と研磨後の重量を測定し、前後の重量減を厚みに
換算し、１分間あたりの研磨速度を算出した。ガラスデ
ィスクを１％ＨＦ溶液で２分間エッチングし、純水で、
洗浄、乾燥後、集光ランプで傷を観察する。そのときの
スクラッチの本数を数える。 研磨速度：０．４２μｍ／ｍｉｎ 表面状態：スクラッチ傷は観察されなかった。Example 3 An aqueous polishing solution prepared by a solid phase method and containing 5 wt% of barium zirconate (BaTiO 3 ) having an average particle diameter of 0.7 μm and a maximum particle diameter of 3.5 μm was prepared, and glass polishing was performed. The test was performed. Polishing conditions Glass material: glass substrate (diameter 100 mm)
Blue plate glass) Platen diameter: 200 mm Platen rotation speed: 150 rpm Work rotation number: 100 rpm Polishing pad: Polytex DG Slurry flow rate: 20 ml / min Result The weight before and after polishing is measured, and the weight loss before and after polishing is measured as the thickness. And the polishing rate per minute was calculated. Etch the glass disk with 1% HF solution for 2 minutes, and with pure water,
After washing and drying, observe the wound with a condenser lamp. Count the number of scratches at that time. Polishing rate: 0.42 μm / min Surface condition: No scratch was observed.
【００１６】［実施例４］固相法で作製した、平均粒径
０．３μｍ、最大粒子径１．０μｍの珪酸マグネシウム
（ＭｇＳｉＯ3）５ｗｔ％を含有する水性研磨液を調整
し、ガラス研磨試験を行った。 ・研磨条件 使用ガラス材：ガラスサブストレート（直径１００ｍｍ
青板ガラス） 定盤径：２００ｍｍ 定盤回転数：１５０ｒｐｍ ワーク自転数：１００ｒｐｍ 研磨パッド：ポリテックスＤＧ スラリー流量：２０ｍｌ／ｍｉｎ ・結果 研磨前と研磨後の重量を測定し、前後の重量減を厚みに
換算し、１分間あたりの研磨速度を算出した。ガラスデ
ィスクを１％ＨＦ溶液で２分間エッチングし、純水で、
洗浄、乾燥後、集光ランプで傷を観察する。そのときの
スクラッチの本数を数える。 研磨速度：０．２６μｍ／ｍｉｎ 表面状態：スクラッチ傷はわずかに観察された。Example 4 An aqueous polishing solution prepared by a solid phase method and containing 5 wt% of magnesium silicate (MgSiO 3 ) having an average particle diameter of 0.3 μm and a maximum particle diameter of 1.0 μm was prepared, and a glass polishing test was performed. Was done. Polishing conditions Glass material: glass substrate (diameter 100 mm)
Blue plate glass) Platen diameter: 200 mm Platen rotation speed: 150 rpm Work rotation number: 100 rpm Polishing pad: Polytex DG Slurry flow rate: 20 ml / min Result The weight before and after polishing is measured, and the weight loss before and after polishing is measured as the thickness. And the polishing rate per minute was calculated. Etch the glass disk with 1% HF solution for 2 minutes, and with pure water,
After washing and drying, observe the wound with a condenser lamp. Count the number of scratches at that time. Polishing rate: 0.26 μm / min Surface condition: Slight scratches were observed.
【００１７】［実施例５］固相法で作製した、平均粒径
０．７μｍ、最大粒子径１．５μｍのチタン酸バリウム
（ＢａＴｉＯ3）５ｗｔ％を含有する水性研磨液を調整
し、ガラス研磨試験を行った。 ・研磨条件 使用ガラス材：ガラスサブストレート（直径１００ｍｍ
青板ガラス） 定盤径：２００ｍｍ 定盤回転数：１５０ｒｐｍ ワーク自転数：１００ｒｐｍ 研磨パッド：ポリテックスＤＧ スラリー流量：２０ｍｌ／ｍｉｎ ・結果 研磨前と研磨後の重量を測定し、前後の重量減を厚みに
換算し、１分間あたりの研磨速度を算出した。ガラスデ
ィスクを１％ＨＦ溶液で２分間エッチングし、純水で、
洗浄、乾燥後、集光ランプで傷を観察する。そのときの
スクラッチの本数を数える。 研磨速度：０．６１μｍ／ｍｉｎ 表面状態：スクラッチ傷はわずかに観察された。Example 5 An aqueous polishing solution containing barium titanate (BaTiO 3 ) having an average particle diameter of 0.7 μm and a maximum particle diameter of 1.5 μm and containing 5 wt% was prepared by a solid phase method, and glass polishing was performed. The test was performed. Polishing conditions Glass material: glass substrate (diameter 100 mm)
Blue plate glass) Platen diameter: 200 mm Platen rotation speed: 150 rpm Work rotation number: 100 rpm Polishing pad: Polytex DG Slurry flow rate: 20 ml / min Result The weight before and after polishing is measured, and the weight loss before and after polishing is measured as the thickness. And the polishing rate per minute was calculated. Etch the glass disk with 1% HF solution for 2 minutes, and with pure water,
After washing and drying, observe the wound with a condenser lamp. Count the number of scratches at that time. Polishing rate: 0.61 μm / min Surface condition: Slight scratches were slightly observed.
【００１８】［実施例６］ （チタン酸バリウムの製造方法）硫酸法二酸化チタン製
造における中間生成物である硫酸チタニル（ＴｉＯＳＯ
4）の加水分解により生成したチタン水和物またはメタ
チタン酸（ＴｉＯ（ＯＨ）2）のスラリー（ＴｉＯ2換算
で４０８ｇ／Ｌ）に対し水酸化バリウムを１．２倍モル
（Ｂａ（ＯＨ）2・８Ｈ２０／ＴｉＯ2＝１．２）となる
ように添加して、メタチタン酸スラリーの４倍量の水を
加え攪拌しながら温度を９５℃に保持し、２時間反応を
続行させた。次いで、濾過装置により固液分離を行い、
得られたウェットケーキを洗浄装置に入れ、温度８０℃
の温水で過剰の水酸化バリウムを十分洗い流す。次いで
再び濾過を行い、得られた結晶粉末を１０５℃にて乾燥
した。[Example 6] (Method for producing barium titanate) Titanyl sulfate (TiOSO) which is an intermediate product in the production of titanium dioxide by the sulfuric acid method
4 ) Barium hydroxide is 1.2 times mol (Ba (OH) 2 ) with respect to a slurry (408 g / L in terms of TiO 2 ) of titanium hydrate or metatitanic acid (TiO (OH) 2 ) produced by hydrolysis of 4 ). (8H20 / TiO 2 = 1.2), and the mixture was added with 4 times the amount of water of the metatitanic acid slurry, the temperature was maintained at 95 ° C. with stirring, and the reaction was continued for 2 hours. Next, solid-liquid separation is performed by a filtration device,
The obtained wet cake is put in a washing device, and the temperature is 80 ° C.
Wash off excess barium hydroxide thoroughly with warm water. Next, filtration was performed again, and the obtained crystal powder was dried at 105 ° C.
【００１９】上記の方法で作製した、平均粒径０．１μ
ｍ、最大粒子径０．２μｍのチタン酸バリウム（ＢａＴ
ｉＯ3）５ｗｔ％を含有する水性研磨液を調整し、ガラ
ス研磨試験を行った。 ・研磨条件 使用ガラス材：ガラスサブストレート（直径１００ｍｍ
青板ガラス） 定盤径：２００ｍｍ 定盤回転数：１５０ｒｐｍ ワーク自転数：１００ｒｐｍ 研磨パッド：ポリテックスＤＧ スラリー流量：２０ｍｌ／ｍｉｎ ・結果 研磨前と研磨後の重量を測定し、前後の重量減を厚みに
換算し、１分間あたりの研磨速度を算出した。ガラスデ
ィスクを１％ＨＦ溶液で２分間エッチングし、純水で、
洗浄、乾燥後、集光ランプで傷を観察する。そのときの
スクラッチの本数を数える。 研磨速度：０．１８μｍ／ｍｉｎ 表面状態：スクラッチ傷は観察されなかった。The average particle size of 0.1 μm prepared by the above method is used.
m, barium titanate having a maximum particle size of 0.2 μm (BaT
An aqueous polishing solution containing 5 wt% of iO 3 ) was prepared and a glass polishing test was performed. Polishing conditions Glass material: glass substrate (diameter 100 mm)
Blue plate glass) Platen diameter: 200 mm Platen rotation speed: 150 rpm Work rotation number: 100 rpm Polishing pad: Polytex DG Slurry flow rate: 20 ml / min Result The weight before and after polishing is measured, and the weight loss before and after polishing is measured as the thickness. And the polishing rate per minute was calculated. Etch the glass disk with 1% HF solution for 2 minutes, and with pure water,
After washing and drying, observe the wound with a condenser lamp. Count the number of scratches at that time. Polishing rate: 0.18 μm / min Surface condition: No scratch was observed.
【００２０】〈比較例１〉平均粒径０．５μｍ、最大粒
子径１．１μｍのシリカ５％を含有する水を溶媒とした
研磨液を調整し、ガラス研磨試験を行った。 ・研磨条件 使用ガラス材：ガラスサブストレート（直径１００ｍｍ
青板ガラス） 定盤径：２００ｍｍ 定盤回転数：１５０ｒｐｍ ワーク自転数：１００ｒｐｍ 研磨パッド：ポリテックスＤＧ スラリー流量：２０ｍｌ／ｍｉｎ ・結果 研磨前と研磨後の重量を測定し、前後の重量減を厚みに
換算し、１分間あたりの研磨速度を算出した。ガラスデ
ィスクを１％ＨＦ溶液で２分間エッチングし、純水で、
洗浄、乾燥後、集光ランプで傷を観察する。そのときの
スクラッチの本数を数える。 研磨速度：０．１３μｍ／ｍｉｎ 表面状態：スクラッチ傷は観察されなかった。<Comparative Example 1> A glass polishing test was performed by preparing a polishing liquid using water containing 5% of silica having an average particle diameter of 0.5 μm and a maximum particle diameter of 1.1 μm as a solvent. Polishing conditions Glass material: glass substrate (diameter 100 mm)
Blue plate glass) Platen diameter: 200 mm Platen rotation speed: 150 rpm Work rotation number: 100 rpm Polishing pad: Polytex DG Slurry flow rate: 20 ml / min Result The weight before and after polishing is measured, and the weight loss before and after polishing is measured as the thickness. And the polishing rate per minute was calculated. Etch the glass disk with 1% HF solution for 2 minutes, and with pure water,
After washing and drying, observe the wound with a condenser lamp. Count the number of scratches at that time. Polishing rate: 0.13 μm / min Surface condition: No scratch was observed.
【００２１】〈比較例２〉平均粒径０．７μｍ、最大粒
子径２．５μｍの酸化セリウム５ｗｔ％を含有する水を
溶媒とした研磨液を調整し、ガラス研磨試験を行った。 ・研磨条件 使用ガラス材：ガラスサブストレート（直径１００ｍｍ
青板ガラス） 定盤径：２００ｍｍ 定盤回転数：１５０ｒｐｍ ワーク自転数：１００ｒｐｍ 研磨パッド：ポリテックスＤＧ スラリー流量：２０ｍｌ／ｍｉｎ ・結果 研磨前と研磨後の重量を測定し、前後の重量減を厚みに
換算し、１分間あたりの研磨速度を算出した。ガラスデ
ィスクを１％ＨＦ溶液で２分間エッチングし、純水で、
洗浄、乾燥後、集光ランプで傷を観察する。そのときの
スクラッチの本数を数える。 研磨速度：０．５２μｍ／ｍｉｎ 表面状態：スクラッチ傷が数本観察された。<Comparative Example 2> A glass polishing test was performed by preparing a polishing liquid using water containing 5 wt% of cerium oxide having an average particle diameter of 0.7 μm and a maximum particle diameter of 2.5 μm as a solvent. Polishing conditions Glass material: glass substrate (diameter 100 mm)
Blue plate glass) Platen diameter: 200 mm Platen rotation speed: 150 rpm Work rotation number: 100 rpm Polishing pad: Polytex DG Slurry flow rate: 20 ml / min Result The weight before and after polishing is measured, and the weight loss before and after polishing is measured as the thickness. And the polishing rate per minute was calculated. Etch the glass disk with 1% HF solution for 2 minutes, and with pure water,
After washing and drying, observe the wound with a condenser lamp. Count the number of scratches at that time. Polishing rate: 0.52 μm / min Surface condition: Several scratches were observed.
【００２２】上記実施例及び比較例の結果をまとめて以
下に示す。The results of the above Examples and Comparative Examples are summarized below.
【表１】 [Table 1]
【００２３】[0023]
【発明の効果】本発明は以上のように、特にガラスの研
磨に適した酸化物を得ることができる。As described above, according to the present invention, an oxide particularly suitable for polishing glass can be obtained.
【図１】本発明の研磨材の顕微鏡写真。FIG. 1 is a micrograph of the abrasive of the present invention.
Claims (6)
ａ，Ｚｎ，Ａｌ，Ｆｅから選ばれる１種あるいは２種以
上よりなり、Ｂ元素がＴｉ，Ｚｒ，Ｈｆ，Ｓｎ，Ｓｉ，
Ｃｒ，Ｍｎ，Ｃｏから選ばれる１種あるいは２種以上よ
りなる組成式ＡＢＯ3で表される酸化物からなることを
特徴とする研磨材。1. The method according to claim 1, wherein the element A is Li, Mg, Ca, Sr, B
a, Zn, Al, Fe or one or more selected from the group consisting of Ti, Zr, Hf, Sn, Si,
A polishing material comprising an oxide represented by a composition formula ABO 3 consisting of one or more selected from Cr, Mn, and Co.
記載の研磨材。2. The method according to claim 1, wherein the average particle size is 2 μm or less.
An abrasive as described.
る請求項１又は２記載の研磨材。3. The abrasive according to claim 1, wherein the maximum particle size is not more than four times the average particle size.
の研磨材を水に分散し、コロイド状、スラリー状もしく
はペースト状に形状としてなることを特徴とする水分散
研磨材。4. A water-dispersed abrasive, wherein the abrasive according to claim 1 is dispersed in water to form a colloid, slurry or paste.
定剤を１種あるいは２種以上を含んでいることを特徴と
する水分散研磨材。5. The water-dispersed abrasive according to claim 4, wherein the water-dispersed abrasive contains one or more dispersion stabilizers.
用いてガラスを研磨する研磨方法。6. A polishing method for polishing glass using the water-dispersed abrasive according to claim 4. Description:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28526399A JP2001107028A (en) | 1999-10-06 | 1999-10-06 | Abrasive material and abrasion process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28526399A JP2001107028A (en) | 1999-10-06 | 1999-10-06 | Abrasive material and abrasion process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001107028A true JP2001107028A (en) | 2001-04-17 |
Family
ID=17689246
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28526399A Pending JP2001107028A (en) | 1999-10-06 | 1999-10-06 | Abrasive material and abrasion process |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001107028A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012122042A (en) * | 2010-12-10 | 2012-06-28 | Japan Fine Ceramics Center | Polishing material, polishing composition and polishing method |
| JP2012201884A (en) * | 2012-01-25 | 2012-10-22 | Mie Industry & Enterprise Support Center | Glass abrasive material |
| JP2012224745A (en) * | 2011-04-19 | 2012-11-15 | Japan Fine Ceramics Center | Polishing material, polishing composition and polishing method |
| JP2013082050A (en) * | 2011-10-12 | 2013-05-09 | Japan Fine Ceramics Center | Polishing material, polishing composition, and polishing method |
| JP2017014436A (en) * | 2015-07-03 | 2017-01-19 | 堺化学工業株式会社 | Manufacturing method of composite metal oxide polishing material and composite metal oxide polishing material |
-
1999
- 1999-10-06 JP JP28526399A patent/JP2001107028A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012122042A (en) * | 2010-12-10 | 2012-06-28 | Japan Fine Ceramics Center | Polishing material, polishing composition and polishing method |
| JP2012224745A (en) * | 2011-04-19 | 2012-11-15 | Japan Fine Ceramics Center | Polishing material, polishing composition and polishing method |
| JP2013082050A (en) * | 2011-10-12 | 2013-05-09 | Japan Fine Ceramics Center | Polishing material, polishing composition, and polishing method |
| JP2012201884A (en) * | 2012-01-25 | 2012-10-22 | Mie Industry & Enterprise Support Center | Glass abrasive material |
| JP2017014436A (en) * | 2015-07-03 | 2017-01-19 | 堺化学工業株式会社 | Manufacturing method of composite metal oxide polishing material and composite metal oxide polishing material |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6615499B1 (en) | Method for producing cerium oxide, cerium oxide abrasive, method for polishing substrate using the same and method for manufacturing semiconductor device | |
| US6343976B1 (en) | Abrasive, method of polishing wafer, and method of producing semiconductor device | |
| JP2002138275A (en) | Cerium oxide abrasive agent and method for abrading base | |
| JP6603142B2 (en) | Silica composite fine particle dispersion, method for producing the same, and polishing slurry containing silica composite fine particle dispersion | |
| JP2003197573A (en) | Colloidal silica for polishing surface wherein metal film and insulation film coexist | |
| WO2013035545A1 (en) | Abrasive grains, manufacturing process therefor, polishing slurry and process for manufacturing glass products | |
| JP2007153692A (en) | Method for manufacturing anisotropic-shape silica sol | |
| JP2001107028A (en) | Abrasive material and abrasion process | |
| JP2017206410A (en) | Manufacturing method of silica-based composite fine particle dispersion | |
| KR102660018B1 (en) | Abrasive for synthetic quartz glass substrate, manufacturing method thereof, and polishing method for synthetic quartz glass substrate | |
| JP2000017195A (en) | Cerium oxide abrasive, polishing of substrate and semiconductor device | |
| JPH10237425A (en) | Polishing agent | |
| JP2005177970A (en) | Slurry for flattening color photoresist | |
| JPH1036819A (en) | Polishing composition for aluminum disk | |
| JP4356636B2 (en) | Cerium oxide manufacturing method, cerium oxide abrasive, substrate polishing method using the same, and semiconductor device manufacturing method | |
| JP2000188270A (en) | Cerium oxide abrasive and method of grinding substrate | |
| JP2003306669A (en) | Polishing slurry | |
| JPH09316431A (en) | Slurry for polishing | |
| JP2009091197A (en) | Warty-surfaced sphere-form inorganic oxide sol, method for producing same, and abrasive containing the sol | |
| JP2000186277A (en) | Cerium oxide abrasive and method for polishing substrate | |
| JP2000186276A (en) | Cerium oxide abrasive and polishing method for substrate | |
| JP2003051467A (en) | Cerium oxide abrasive and polishing method of substrate | |
| JP2006148158A (en) | Cerium oxide polishing material and substrate-polishing method | |
| JP2005039286A (en) | Cerium oxide abrasive and method for polishing substrate | |
| JP2004336082A (en) | Cerium oxide abrasive and method of grinding substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20060125 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20080417 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20080513 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080620 |
|
| RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20080620 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20081111 |