JP2001102462A - ショットキ・ダイオード及び関連構造の製造方法 - Google Patents

ショットキ・ダイオード及び関連構造の製造方法

Info

Publication number
JP2001102462A
JP2001102462A JP2000231509A JP2000231509A JP2001102462A JP 2001102462 A JP2001102462 A JP 2001102462A JP 2000231509 A JP2000231509 A JP 2000231509A JP 2000231509 A JP2000231509 A JP 2000231509A JP 2001102462 A JP2001102462 A JP 2001102462A
Authority
JP
Japan
Prior art keywords
type
well
impurity
layer
conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2000231509A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001102462A5 (https=
Inventor
Ronald Hulfachor
ロナルド・ハルファチャー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Semiconductor Corp filed Critical Fairchild Semiconductor Corp
Publication of JP2001102462A publication Critical patent/JP2001102462A/ja
Publication of JP2001102462A5 publication Critical patent/JP2001102462A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2000231509A 1999-07-29 2000-07-31 ショットキ・ダイオード及び関連構造の製造方法 Withdrawn JP2001102462A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/364,232 US6261932B1 (en) 1999-07-29 1999-07-29 Method of fabricating Schottky diode and related structure
US09/364232 1999-07-29

Publications (2)

Publication Number Publication Date
JP2001102462A true JP2001102462A (ja) 2001-04-13
JP2001102462A5 JP2001102462A5 (https=) 2007-09-13

Family

ID=23433620

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000231509A Withdrawn JP2001102462A (ja) 1999-07-29 2000-07-31 ショットキ・ダイオード及び関連構造の製造方法

Country Status (3)

Country Link
US (1) US6261932B1 (https=)
JP (1) JP2001102462A (https=)
DE (1) DE10036891A1 (https=)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7274082B2 (en) * 2000-01-19 2007-09-25 Adrena, Inc. Chemical sensor using chemically induced electron-hole production at a schottky barrier
US6903433B1 (en) * 2000-01-19 2005-06-07 Adrena, Inc. Chemical sensor using chemically induced electron-hole production at a schottky barrier
US6956274B2 (en) * 2002-01-11 2005-10-18 Analog Devices, Inc. TiW platinum interconnect and method of making the same
US6927460B1 (en) 2002-02-15 2005-08-09 Fairchild Semiconductor Corporation Method and structure for BiCMOS isolated NMOS transistor
US6833556B2 (en) 2002-08-12 2004-12-21 Acorn Technologies, Inc. Insulated gate field effect transistor having passivated schottky barriers to the channel
US7902029B2 (en) * 2002-08-12 2011-03-08 Acorn Technologies, Inc. Process for fabricating a self-aligned deposited source/drain insulated gate field-effect transistor
US7176483B2 (en) * 2002-08-12 2007-02-13 Acorn Technologies, Inc. Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
US7084423B2 (en) 2002-08-12 2006-08-01 Acorn Technologies, Inc. Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
JP4637553B2 (ja) * 2004-11-22 2011-02-23 パナソニック株式会社 ショットキーバリアダイオード及びそれを用いた集積回路
US7064407B1 (en) * 2005-02-04 2006-06-20 Micrel, Inc. JFET controlled schottky barrier diode
US7388271B2 (en) * 2005-07-01 2008-06-17 Texas Instruments Incorporated Schottky diode with minimal vertical current flow
US7737532B2 (en) * 2005-09-06 2010-06-15 Taiwan Semiconductor Manufacturing Company, Ltd. Hybrid Schottky source-drain CMOS for high mobility and low barrier
KR101338160B1 (ko) * 2007-07-06 2013-12-06 삼성전자주식회사 상변화 기억 소자 및 그 형성 방법
US8338906B2 (en) * 2008-01-30 2012-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Schottky device
US20100258899A1 (en) * 2009-04-08 2010-10-14 Chih-Tsung Huang Schottky diode device with an extended guard ring and fabrication method thereof
US20130241007A1 (en) * 2012-03-15 2013-09-19 International Business Machines Corporation Use of band edge gate metals as source drain contacts
US9620611B1 (en) 2016-06-17 2017-04-11 Acorn Technology, Inc. MIS contact structure with metal oxide conductor
WO2018094205A1 (en) 2016-11-18 2018-05-24 Acorn Technologies, Inc. Nanowire transistor with source and drain induced by electrical contacts with negative schottky barrier height
CN109638084B (zh) * 2018-12-11 2021-12-03 成都芯源系统有限公司 一种横向肖特基二极管及其制作方法
TWI862129B (zh) * 2023-09-01 2024-11-11 友達光電股份有限公司 顯示面板及其製造方法
US20250126856A1 (en) * 2023-10-13 2025-04-17 Avago Technologies International Sales Pte. Limited Semiconductor device with increased operating voltage characteristics

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2460040A1 (fr) 1979-06-22 1981-01-16 Thomson Csf Procede pour realiser une diode schottky a tenue en tension amelioree
JP3061406B2 (ja) * 1990-09-28 2000-07-10 株式会社東芝 半導体装置
US5150177A (en) 1991-12-06 1992-09-22 National Semiconductor Corporation Schottky diode structure with localized diode well
EP0562309B1 (en) * 1992-03-25 2002-06-12 Texas Instruments Incorporated Planar process using common alignment marks for well implants
US5665993A (en) * 1994-09-29 1997-09-09 Texas Instruments Incorporated Integrated circuit including a FET device and Schottky diode
JP3093620B2 (ja) * 1995-10-19 2000-10-03 日本電気株式会社 半導体装置の製造方法
FR2756104B1 (fr) * 1996-11-19 1999-01-29 Sgs Thomson Microelectronics Fabrication de circuits integres bipolaires/cmos
FR2758004B1 (fr) * 1996-12-27 1999-03-05 Sgs Thomson Microelectronics Transistor bipolaire a isolement dielectrique
US5973372A (en) * 1997-12-06 1999-10-26 Omid-Zohoor; Farrokh Silicided shallow junction transistor formation and structure with high and low breakdown voltages

Also Published As

Publication number Publication date
DE10036891A1 (de) 2001-03-22
US6261932B1 (en) 2001-07-17

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