|
US7274082B2
(en)
*
|
2000-01-19 |
2007-09-25 |
Adrena, Inc. |
Chemical sensor using chemically induced electron-hole production at a schottky barrier
|
|
US6903433B1
(en)
*
|
2000-01-19 |
2005-06-07 |
Adrena, Inc. |
Chemical sensor using chemically induced electron-hole production at a schottky barrier
|
|
US6956274B2
(en)
*
|
2002-01-11 |
2005-10-18 |
Analog Devices, Inc. |
TiW platinum interconnect and method of making the same
|
|
US6927460B1
(en)
|
2002-02-15 |
2005-08-09 |
Fairchild Semiconductor Corporation |
Method and structure for BiCMOS isolated NMOS transistor
|
|
US6833556B2
(en)
|
2002-08-12 |
2004-12-21 |
Acorn Technologies, Inc. |
Insulated gate field effect transistor having passivated schottky barriers to the channel
|
|
US7902029B2
(en)
*
|
2002-08-12 |
2011-03-08 |
Acorn Technologies, Inc. |
Process for fabricating a self-aligned deposited source/drain insulated gate field-effect transistor
|
|
US7176483B2
(en)
*
|
2002-08-12 |
2007-02-13 |
Acorn Technologies, Inc. |
Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
|
|
US7084423B2
(en)
|
2002-08-12 |
2006-08-01 |
Acorn Technologies, Inc. |
Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
|
|
JP4637553B2
(ja)
*
|
2004-11-22 |
2011-02-23 |
パナソニック株式会社 |
ショットキーバリアダイオード及びそれを用いた集積回路
|
|
US7064407B1
(en)
*
|
2005-02-04 |
2006-06-20 |
Micrel, Inc. |
JFET controlled schottky barrier diode
|
|
US7388271B2
(en)
*
|
2005-07-01 |
2008-06-17 |
Texas Instruments Incorporated |
Schottky diode with minimal vertical current flow
|
|
US7737532B2
(en)
*
|
2005-09-06 |
2010-06-15 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Hybrid Schottky source-drain CMOS for high mobility and low barrier
|
|
KR101338160B1
(ko)
*
|
2007-07-06 |
2013-12-06 |
삼성전자주식회사 |
상변화 기억 소자 및 그 형성 방법
|
|
US8338906B2
(en)
*
|
2008-01-30 |
2012-12-25 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Schottky device
|
|
US20100258899A1
(en)
*
|
2009-04-08 |
2010-10-14 |
Chih-Tsung Huang |
Schottky diode device with an extended guard ring and fabrication method thereof
|
|
US20130241007A1
(en)
*
|
2012-03-15 |
2013-09-19 |
International Business Machines Corporation |
Use of band edge gate metals as source drain contacts
|
|
US9620611B1
(en)
|
2016-06-17 |
2017-04-11 |
Acorn Technology, Inc. |
MIS contact structure with metal oxide conductor
|
|
WO2018094205A1
(en)
|
2016-11-18 |
2018-05-24 |
Acorn Technologies, Inc. |
Nanowire transistor with source and drain induced by electrical contacts with negative schottky barrier height
|
|
CN109638084B
(zh)
*
|
2018-12-11 |
2021-12-03 |
成都芯源系统有限公司 |
一种横向肖特基二极管及其制作方法
|
|
TWI862129B
(zh)
*
|
2023-09-01 |
2024-11-11 |
友達光電股份有限公司 |
顯示面板及其製造方法
|
|
US20250126856A1
(en)
*
|
2023-10-13 |
2025-04-17 |
Avago Technologies International Sales Pte. Limited |
Semiconductor device with increased operating voltage characteristics
|