JP2001044225A - Manufacture of resin-sealed semiconductor device - Google Patents
Manufacture of resin-sealed semiconductor deviceInfo
- Publication number
- JP2001044225A JP2001044225A JP11212317A JP21231799A JP2001044225A JP 2001044225 A JP2001044225 A JP 2001044225A JP 11212317 A JP11212317 A JP 11212317A JP 21231799 A JP21231799 A JP 21231799A JP 2001044225 A JP2001044225 A JP 2001044225A
- Authority
- JP
- Japan
- Prior art keywords
- substrates
- resin
- semiconductor element
- sealing
- sealed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Injection Moulding Of Plastics Or The Like (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は樹脂封止型半導体装
置の製造方法に関する。The present invention relates to a method for manufacturing a resin-sealed semiconductor device.
【0002】[0002]
【従来の技術】図8は、従来例を示す断面図である。2. Description of the Related Art FIG. 8 is a sectional view showing a conventional example.
【0003】近年、小型軽量化、ユーザでのプリント基
板への実装性向上、パッケージとしての電気特性改善と
いうメリットからBGAパッケージが増加する傾向にあ
る。又、現在のQFPと同様にパッケージの種類が多く
なる可能性が高い。これに伴い、生産数量に合わせて多
大な設備投資をする必要があり、生産性を向上し設備投
資を最小限にする工夫が必要となっている。[0003] In recent years, BGA packages have tended to increase due to the advantages of downsizing and weight reduction, improvement of mountability on printed boards by users, and improvement of electrical characteristics as packages. Also, like the current QFP, there is a high possibility that the number of types of packages will increase. Along with this, it is necessary to make a large capital investment in accordance with the production quantity, and it is necessary to devise ways to improve productivity and minimize the capital investment.
【0004】しかしながら、従来一般に、図8に示すよ
うに、1枚の基板41上に半導体素子43を搭載させ、
接着剤を用いて固着し、いわゆるボンディングした状態
で金型と半導体素子43との間に形成されるキャビティ
にゲート47から封止樹脂49を射出して樹脂封止を行
っている。However, conventionally, generally, as shown in FIG. 8, a semiconductor element 43 is mounted on a single substrate 41,
A sealing resin 49 is injected from a gate 47 into a cavity formed between the mold and the semiconductor element 43 in a so-called bonded state by using an adhesive to perform resin sealing.
【0005】[0005]
【発明が解決しようとする課題】上述の場合、BGAパ
ッケージは基板の上を封入する片面封止方式であり1回
の封入プロセスで製造できる個数が少ない。そこで、基
板を貼り合わせて両面封止ができる様にして生産性を向
上することが要望される。In the above case, the BGA package is of a single-sided sealing type in which the top of the substrate is sealed, and the number of BGA packages that can be manufactured by one sealing process is small. Therefore, it is desired to improve the productivity by bonding the substrates so that both sides can be sealed.
【0006】本発明の目的は、補強板または接着テープ
を用い、この補強板またはテープの上下両面に別の基板
を固着させて、全体を樹脂封止することにより、1回の
封入プロセスで2枚の基板を封入できるので、同一パッ
ケージのBGAを2倍の速さで生産できる樹脂封止型半
導体装置の製造方法を提供することである。An object of the present invention is to use a reinforcing plate or an adhesive tape, fix another substrate on the upper and lower surfaces of the reinforcing plate or the tape, and seal the whole with a resin, so that two encapsulation processes can be performed in one encapsulation process. An object of the present invention is to provide a method of manufacturing a resin-encapsulated semiconductor device capable of manufacturing a BGA of the same package at twice the speed because a single substrate can be enclosed.
【0007】[0007]
【課題を解決するための手段】本発明の樹脂封止型半導
体装置の製造方法は、ボンディングされた半導体素子ユ
ニットを搭載した上下2枚の基板を、その基板の半田ボ
ール面を対向させ、基板変形防止用補強板を介して仮固
着し、上下2枚の基板および補強板の一体物を封止金型
内に配置し、1度の射出樹脂により両基板を封入し、所
定の温度に冷却後、2枚の樹脂封止された基板に分離し
て成ることを特徴としている。According to a method of manufacturing a resin-encapsulated semiconductor device of the present invention, two upper and lower substrates on which a bonded semiconductor element unit is mounted are placed with their solder ball surfaces facing each other. Temporarily fixed via a deformation prevention reinforcing plate, the upper and lower two substrates and the reinforcing plate are placed in a sealing mold, and both substrates are sealed with a single injection resin, and cooled to a predetermined temperature. Thereafter, the substrate is separated into two resin-sealed substrates.
【0008】なお、封止用樹脂が各半導体素子ユニット
に射出されるための、プランジャーポットのカルから出
発するランナーは、上下各基板側にそれぞれ設けられて
いるものでもよく、上下基板のいずれか一方側にのみに
設けられ、両基板の対応する個所に前記ランナーに接続
された貫通孔が設けられているものでもよい。The runner starting from the plunger pot cull for injecting the sealing resin into each semiconductor element unit may be provided on the upper and lower substrates, respectively. Alternatively, a through hole may be provided on only one side, and a through hole connected to the runner may be provided at a corresponding position on both substrates.
【0009】また、ボンディングされた多数の半導体素
子ユニットをマトリックス状に搭載した上下2枚の基板
を、それらの基板の半田ボール面を対向させ、基板変形
防止用補強板を介して仮固着し、上下2枚の基板および
補強板の一体物を一つの封止金型内に配置し、なお、封
止用樹脂が各半導体素子ユニットに射出されるための、
プランジャーポットのカルから出発するランナーは、上
下各基板側にそれぞれ設けられ、1度の射出樹脂により
両基板全体を一括封入し、所定の温度に冷却後、2枚の
樹脂封止された基板に分離するものでもよい。Further, two upper and lower substrates on which a large number of bonded semiconductor element units are mounted in a matrix are temporarily fixed via a reinforcing plate for preventing deformation of the substrates, with the solder ball surfaces of the substrates facing each other, An integrated body of the upper and lower two substrates and the reinforcing plate is arranged in one sealing mold, and the sealing resin is injected into each semiconductor element unit.
The runners starting from the plunger pot cull are provided on each of the upper and lower substrates, and the entire substrates are collectively sealed with a single injection resin, cooled to a predetermined temperature, and then two resin-sealed substrates. May be separated.
【0010】なおまた、ランナーは、上下基板のいずれ
か一方側にのみに設けられ、両基板の対応する個所に前
記ランナーに接続された貫通孔が設けられたものでもよ
い。なお、以上の各場合において、上下2枚の基板に搭
載された半導体素子ユニットの大きさが異なるものでも
可能であり、あるいはさらに、補強板の代わりに接着テ
ープが用いられるものも好ましい。The runner may be provided only on one of the upper and lower substrates, and a through hole connected to the runner may be provided at a corresponding position on both substrates. In each of the above cases, the size of the semiconductor element units mounted on the upper and lower two substrates may be different, or a device using an adhesive tape instead of the reinforcing plate is preferable.
【0011】[0011]
【発明の実施の形態】次に、本発明の実施の形態につい
て図面を参照して説明する。Next, embodiments of the present invention will be described with reference to the drawings.
【0012】図1は、本発明の樹脂封止型半導体装置の
製造方法の一実施形態例を示す断面図、図2(a)は、
本実施形態例においてカルおよびランナーが上下別々に
設けられ、隣の半導体素子ユニットとの関係を示す模式
断面図、(b)は、(a)の模式平面図、図3(a)
は、本実施形態例においてカルおよびランナーが下方の
みに設けられ、隣の半導体素子ユニットとの関係を示す
模式断面図、(b)は、(a)の模式平面図である。FIG. 1 is a sectional view showing an embodiment of a method for manufacturing a resin-sealed semiconductor device according to the present invention, and FIG.
In this embodiment, culls and runners are separately provided in the upper and lower parts, and a schematic cross-sectional view showing a relationship with an adjacent semiconductor element unit, (b) is a schematic plan view of (a), and FIG.
FIG. 2 is a schematic cross-sectional view showing a relationship with an adjacent semiconductor element unit in which a cull and a runner are provided only below in this embodiment, and FIG. 2B is a schematic plan view of FIG.
【0013】本発明の半導体装置の製造方法は、図1に
示すように、2枚の基板1,2を、基板1,2の変形防
止を目的とした補強板5に固着し、この貼り合わされた
2枚の基板1,2の両面を封入する。In the method of manufacturing a semiconductor device according to the present invention, as shown in FIG. 1, two substrates 1 and 2 are fixed to a reinforcing plate 5 for preventing deformation of the substrates 1 and 2, and the substrates 1 and 2 are bonded together. Both surfaces of the two substrates 1 and 2 are sealed.
【0014】本発明の半導体装置の製造方法では、図2
(a)に示すようにボンディングされた2枚の基板1,
2を、基板1,2の変形を防止するために作られた補強
板5に、接着剤5a等を用いて固着する。図示していな
いが、さらに、上下金型の位置ずれ防止のため穴と挿入
棒等を用いることが多い。いずれにしても1回の封入プ
ロセスで2枚の基板1,2から成る半導体装置を製造す
る。ゲート7及びランナーはパンチで打ち抜いて除去す
る。In the method of manufacturing a semiconductor device according to the present invention, FIG.
Two substrates 1 bonded as shown in FIG.
2 is fixed to a reinforcing plate 5 made to prevent deformation of the substrates 1 and 2 using an adhesive 5a or the like. Although not shown, holes and insertion rods are often used to prevent the upper and lower molds from being displaced. In any case, a semiconductor device including two substrates 1 and 2 is manufactured by one encapsulation process. The gate 7 and the runner are punched out and removed.
【0015】次に、第2の実施形態例について説明す
る。Next, a second embodiment will be described.
【0016】図4は、多数の半導体素子ユニットを一括
封入する第2の実施形態例において、カルおよびランナ
ーが上下別々に設けられ、隣のユニットとの関係を示す
模式断面図、図5は、本実施形態例において、同じくカ
ルおよびランナーが下方にのみ設けられ、隣のユニット
との関係を示す模式断面図である。FIG. 4 is a schematic cross-sectional view showing the relationship between adjacent units and culls and runners separately provided in a second embodiment in which a large number of semiconductor element units are collectively sealed. FIG. 6 is a schematic cross-sectional view showing a relationship with an adjacent unit in which a cull and a runner are similarly provided only below in the embodiment.
【0017】第2の実施形態例と第1の実施形態例との
差異は、第1の実施形態例の場合、半導体素子ユニット
の個別のキャビティ単位に封止する方法であるのに対
し、第2の実施形態例の場合は、一方の側の各半導体素
子ユニット全体を一括全面封止するものである。したが
って、金型には個々のユニットに対応する個々のキャビ
ティ(凹部)が無い。樹脂ごとダイシングにより個片に
分離される。The difference between the second embodiment and the first embodiment is that, in the case of the first embodiment, the semiconductor element unit is sealed in individual cavities. In the case of the second embodiment, the entire semiconductor element units on one side are collectively and entirely sealed. Therefore, the mold does not have individual cavities (recesses) corresponding to individual units. The resin is separated into individual pieces by dicing.
【0018】本実施形態例の場合、金型の形状が平易で
あり、カルの長さが短く、したがって、樹脂封止までの
コストは低下する。しかしダイシングの深さが増加する
分だけコスト増加要素もあるので、実情に応じて実施形
態を選択する。In the case of this embodiment, the shape of the mold is simple, the length of the cull is short, and the cost up to resin sealing is reduced. However, there is a factor of cost increase corresponding to the increase in the dicing depth, so the embodiment is selected according to the actual situation.
【0019】次に、第3の実施形態例について説明す
る。Next, a third embodiment will be described.
【0020】図6は、図1における上下基板に搭載され
た半導体素子ユニットの大きさが異なる、第3の実施形
態例を示す断面図である。FIG. 6 is a cross-sectional view showing a third embodiment in which the sizes of the semiconductor element units mounted on the upper and lower substrates in FIG. 1 are different.
【0021】本実施形態例の第1実施形態例と異なる点
は、異なる大きさの半導体素子3,4を搭載した2枚の
基板1,2を貼り合わせて2種類のBGAパッケージを
製造するものである。すなわち、少量多品種のパッケー
ジ動向に対応して、2台の封入金型を作製せずに1台の
金型10の設備投資で済むという利点がある。ゲート
7,8およびランナー12aおよび12bの打ち抜き
は、図示下側の、ゲート8、短い方のランナー12b、
大きい方のパッケージ(半導体素子4)側から先に行
う。The difference between this embodiment and the first embodiment is that two types of BGA packages are manufactured by bonding two substrates 1 and 2 on which semiconductor elements 3 and 4 of different sizes are mounted. It is. In other words, there is an advantage that capital investment for one mold 10 is sufficient without manufacturing two enclosing molds in response to the trend of packages of various kinds in small quantities. The punching of the gates 7, 8 and the runners 12a and 12b is performed by the gate 8, the shorter runner 12b,
This is performed from the side of the larger package (semiconductor element 4) first.
【0022】次に、第4の実施形態例について説明す
る。Next, a fourth embodiment will be described.
【0023】図7は、図1における補強板の代わりに接
着テープが用いられた、第4の実施形態例を示す断面図
である。この場合は、補強強度が若干低いがコストおよ
び作業性が高い。FIG. 7 is a sectional view showing a fourth embodiment in which an adhesive tape is used instead of the reinforcing plate in FIG. In this case, although the reinforcing strength is slightly low, the cost and workability are high.
【0024】[0024]
【発明の効果】以上説明したように本発明は、上下2枚
の基板を、その基板の半田ボール面を対向させ、基板変
形防止用補強板を介して仮固着し、封止金型内に配置
し、1度に両基板を樹脂封止し、2枚の樹脂封止された
基板に分離して成ることにより、1回の封入プロセスで
2枚の基板を封入できるので、同一パッケージのBGA
を2倍の速さで生産できる樹脂封止型半導体装置の製造
方法を提供できる効果がある。なお、上下2枚の基板に
搭載された半導体素子ユニットの大きさが異なるもので
もよく、また、補強板の代わりに接着テープを用いても
よい。As described above, according to the present invention, two upper and lower substrates are temporarily fixed to each other with the solder ball surfaces of the substrates facing each other and a reinforcing plate for preventing deformation of the substrates, and are placed in a sealing mold. Since the two substrates are sealed at once and then separated into two resin-sealed substrates, two substrates can be sealed in one encapsulation process.
Has the effect of being able to provide a method of manufacturing a resin-encapsulated semiconductor device capable of producing the same at twice the speed. The size of the semiconductor element units mounted on the upper and lower substrates may be different, and an adhesive tape may be used instead of the reinforcing plate.
【図1】本発明の樹脂封止型半導体装置の製造方法の一
実施形態例を示す断面図である。FIG. 1 is a cross-sectional view showing one embodiment of a method for manufacturing a resin-sealed semiconductor device of the present invention.
【図2】(a)は、本実施形態例においてカルおよびラ
ンナーが上下別々に設けられ、隣の半導体素子ユニット
との関係を示す模式断面図、(b)は、(a)の模式平
面図である。FIG. 2A is a schematic cross-sectional view showing the relationship between an adjacent semiconductor element unit and a cull and a runner provided separately in the upper and lower parts in this embodiment, and FIG. 2B is a schematic plan view of FIG. It is.
【図3】(a)は、本実施形態例においてカルおよびラ
ンナーが下方のみに設けられ、隣の半導体素子ユニット
との関係を示す模式断面図、(b)は、(a)の模式平
面図である。FIG. 3A is a schematic cross-sectional view showing a relationship with an adjacent semiconductor element unit in which a cull and a runner are provided only below in this embodiment, and FIG. 3B is a schematic plan view of FIG. It is.
【図4】多数の半導体素子ユニットを一括封入する第2
の実施形態例において、カルおよびランナーが上下別々
に設けられ、隣のユニットとの関係を示す模式断面図で
ある。FIG. 4 shows a second method for enclosing a large number of semiconductor element units at once.
FIG. 8 is a schematic cross-sectional view showing a relationship with an adjacent unit in which a cull and a runner are separately provided in the upper and lower parts in the embodiment.
【図5】本実施形態例において、同じくカルおよびラン
ナーが下方にのみ設けられ、隣のユニットとの関係を示
す模式断面図である。FIG. 5 is a schematic cross-sectional view showing a relationship with an adjacent unit in which a cull and a runner are similarly provided only below in the embodiment.
【図6】上下基板に搭載された半導体素子ユニットの大
きさが異なる、第3の実施形態例を示す断面図である。FIG. 6 is a cross-sectional view showing a third embodiment example in which semiconductor element units mounted on upper and lower substrates have different sizes.
【図7】補強板の代わりに接着テープが用いられた、第
4の実施形態例を示す断面図である。FIG. 7 is a sectional view showing a fourth embodiment in which an adhesive tape is used instead of a reinforcing plate.
【図8】従来例を示す断面図である。FIG. 8 is a sectional view showing a conventional example.
1,2,41 基板 3,4,43 半導体素子 5 補強板 5a 接着剤 6 接着テープ 7,8、47 ゲート 9,49 封止用樹脂 10 封止金型 11a,11b カル 12a,12b ランナー 12c ランナー(立ち上がり部分) 1, 2, 41 Substrate 3, 4, 43 Semiconductor element 5 Reinforcement plate 5a Adhesive 6 Adhesive tape 7, 8, 47 Gate 9, 49 Sealing resin 10 Sealing mold 11a, 11b Cull 12a, 12b Runner 12c Runner (Rise part)
Claims (7)
を搭載した上下2枚の基板を、該基板の半田ボール面を
対向させ、基板変形防止用補強板を介して仮固着し、前
記上下2枚の基板および前記補強板の一体物を封止金型
内に配置し、1度の射出樹脂により両基板を封入し、所
定の温度に冷却後、2枚の樹脂封止された基板に分離し
て成ることを特徴とする、樹脂封止型半導体装置の製造
方法。An upper substrate and a lower substrate on which a bonded semiconductor element unit is mounted are temporarily fixed via a reinforcing plate for preventing deformation of the substrate, with the solder ball surfaces of the substrates facing each other. And the integrated body of the reinforcing plate is placed in a sealing mold, the two substrates are sealed with a single injection resin, cooled to a predetermined temperature, and then separated into two resin-sealed substrates. A method for manufacturing a resin-encapsulated semiconductor device, comprising:
出されるための、プランジャーポットのカルから出発す
るランナーは、上下各基板側にそれぞれ設けられてい
る、請求項1記載の樹脂封止型半導体装置の製造方法。2. The resin sealing device according to claim 1, wherein runners starting from the plunger pot culls for injecting the sealing resin into the respective semiconductor element units are provided on the upper and lower substrates, respectively. A method for manufacturing a fixed semiconductor device.
出されるための、プランジャーポットのカルから出発す
るランナーは、上下基板のいずれか一方側にのみに設け
られ、両基板の対応する個所に前記ランナーに接続され
た貫通孔が設けられている、請求項1記載の樹脂封止型
半導体装置の製造方法。3. A runner starting from a plunger pot cull for injecting a sealing resin into each semiconductor element unit is provided on only one of the upper and lower substrates, and the runner corresponding to both substrates is provided. The method for manufacturing a resin-encapsulated semiconductor device according to claim 1, wherein a through hole connected to the runner is provided at a location.
ニットをマトリックス状に搭載した上下2枚の基板を、
該基板の半田ボール面を対向させ、基板変形防止用補強
板を介して仮固着し、前記上下2枚の基板および前記補
強板の一体物を一つの封止金型内に配置し、なお、封止
用樹脂が各半導体素子ユニットに射出されるための、プ
ランジャーポットのカルから出発するランナーは、上下
各基板側にそれぞれ設けられ、1度の射出樹脂により両
基板全体を一括封入し、所定の温度に冷却後、2枚の樹
脂封止された基板に分離する、樹脂封止型半導体装置の
製造方法。4. An upper and lower substrate on which a large number of bonded semiconductor element units are mounted in a matrix,
With the solder ball surfaces of the substrate facing each other and temporarily fixed via a substrate deformation preventing reinforcing plate, an integrated body of the upper and lower two substrates and the reinforcing plate is arranged in one sealing mold, Runners starting from the plunger pot culls for injecting the sealing resin into each semiconductor element unit are provided on each of the upper and lower substrates, and the entirety of both substrates is collectively sealed with one injection resin. A method for manufacturing a resin-sealed semiconductor device, comprising cooling to a predetermined temperature and separating the substrate into two resin-sealed substrates.
ニットをマトリックス状に搭載した上下2枚の基板を、
該基板の半田ボール面を対向させ、基板変形防止用補強
板を介して仮固着し、前記上下2枚の基板および前記補
強板の一体物を一つの封止金型内に配置し、なお、封止
用樹脂が各半導体素子ユニットに射出されるための、プ
ランジャーポットのカルから出発するランナーは、上下
基板のいずれか一方側にのみに設けられ、両基板の対応
する個所に前記ランナーに接続された貫通孔が設けら
れ、1度の射出樹脂により両基板全体を一括封入し、所
定の温度に冷却後、2枚の樹脂封止された基板に分離す
る、樹脂封止型半導体装置の製造方法。5. An upper and lower substrate on which a number of bonded semiconductor element units are mounted in a matrix,
With the solder ball surfaces of the substrate facing each other and temporarily fixed via a substrate deformation preventing reinforcing plate, an integrated body of the upper and lower two substrates and the reinforcing plate is arranged in one sealing mold, The runner starting from the plunger pot cull for injecting the sealing resin into each semiconductor element unit is provided only on one of the upper and lower substrates, and the runner is provided at a corresponding location on both substrates. A resin-sealed semiconductor device is provided, in which connected through-holes are provided, the whole of both substrates is collectively sealed with one injection resin, cooled to a predetermined temperature, and then separated into two resin-sealed substrates. Production method.
素子ユニットの大きさが異なる、請求項1ないし5記載
の樹脂封止型半導体装置の製造方法。6. The method of manufacturing a resin-encapsulated semiconductor device according to claim 1, wherein the sizes of the semiconductor element units mounted on the upper and lower two substrates are different.
られる、請求項1ないし6記載の樹脂封止型半導体装置
の製造方法。7. The method according to claim 1, wherein an adhesive tape is used instead of the reinforcing plate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP21231799A JP3317346B2 (en) | 1999-07-27 | 1999-07-27 | Method for manufacturing resin-encapsulated semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21231799A JP3317346B2 (en) | 1999-07-27 | 1999-07-27 | Method for manufacturing resin-encapsulated semiconductor device |
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JP2001044225A true JP2001044225A (en) | 2001-02-16 |
JP3317346B2 JP3317346B2 (en) | 2002-08-26 |
Family
ID=16620556
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JP21231799A Expired - Fee Related JP3317346B2 (en) | 1999-07-27 | 1999-07-27 | Method for manufacturing resin-encapsulated semiconductor device |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005150670A (en) * | 2003-03-12 | 2005-06-09 | Samsung Electronics Co Ltd | Method of manufacturing semiconductor module, and printed circuit board used for the same |
WO2005067029A1 (en) * | 2004-01-06 | 2005-07-21 | Infineon Technologies Ag | Method for packaging integrated circuit dies |
US10099411B2 (en) * | 2015-05-22 | 2018-10-16 | Infineon Technologies Ag | Method and apparatus for simultaneously encapsulating semiconductor dies with layered lead frame strips |
JP2020096014A (en) * | 2018-12-10 | 2020-06-18 | 日亜化学工業株式会社 | Method of manufacturing semiconductor device and method of manufacturing package member |
-
1999
- 1999-07-27 JP JP21231799A patent/JP3317346B2/en not_active Expired - Fee Related
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005150670A (en) * | 2003-03-12 | 2005-06-09 | Samsung Electronics Co Ltd | Method of manufacturing semiconductor module, and printed circuit board used for the same |
WO2005067029A1 (en) * | 2004-01-06 | 2005-07-21 | Infineon Technologies Ag | Method for packaging integrated circuit dies |
US10099411B2 (en) * | 2015-05-22 | 2018-10-16 | Infineon Technologies Ag | Method and apparatus for simultaneously encapsulating semiconductor dies with layered lead frame strips |
JP2020096014A (en) * | 2018-12-10 | 2020-06-18 | 日亜化学工業株式会社 | Method of manufacturing semiconductor device and method of manufacturing package member |
JP7206483B2 (en) | 2018-12-10 | 2023-01-18 | 日亜化学工業株式会社 | Semiconductor device manufacturing method and package member manufacturing method |
Also Published As
Publication number | Publication date |
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JP3317346B2 (en) | 2002-08-26 |
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