JP2001039793A5 - - Google Patents

Download PDF

Info

Publication number
JP2001039793A5
JP2001039793A5 JP1999214763A JP21476399A JP2001039793A5 JP 2001039793 A5 JP2001039793 A5 JP 2001039793A5 JP 1999214763 A JP1999214763 A JP 1999214763A JP 21476399 A JP21476399 A JP 21476399A JP 2001039793 A5 JP2001039793 A5 JP 2001039793A5
Authority
JP
Japan
Prior art keywords
substrate
opening
growth
crystal growth
phase epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1999214763A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001039793A (ja
JP4870859B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP21476399A priority Critical patent/JP4870859B2/ja
Priority claimed from JP21476399A external-priority patent/JP4870859B2/ja
Publication of JP2001039793A publication Critical patent/JP2001039793A/ja
Publication of JP2001039793A5 publication Critical patent/JP2001039793A5/ja
Application granted granted Critical
Publication of JP4870859B2 publication Critical patent/JP4870859B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP21476399A 1999-07-29 1999-07-29 液相エピタキシャル成長装置及び成長方法 Expired - Fee Related JP4870859B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21476399A JP4870859B2 (ja) 1999-07-29 1999-07-29 液相エピタキシャル成長装置及び成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21476399A JP4870859B2 (ja) 1999-07-29 1999-07-29 液相エピタキシャル成長装置及び成長方法

Publications (3)

Publication Number Publication Date
JP2001039793A JP2001039793A (ja) 2001-02-13
JP2001039793A5 true JP2001039793A5 (enrdf_load_stackoverflow) 2006-08-24
JP4870859B2 JP4870859B2 (ja) 2012-02-08

Family

ID=16661145

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21476399A Expired - Fee Related JP4870859B2 (ja) 1999-07-29 1999-07-29 液相エピタキシャル成長装置及び成長方法

Country Status (1)

Country Link
JP (1) JP4870859B2 (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4618944B2 (ja) * 2001-08-06 2011-01-26 シャープ株式会社 結晶シートの製造装置、および結晶シートの製造方法

Similar Documents

Publication Publication Date Title
CA2231625A1 (en) Semiconductor substrate having compound semiconductor layer, process for its production, and electronic device fabricated on semiconductor substrate
EP1081256A3 (en) ZnO crystal growth method, ZnO crystal structure, and semiconductor device using ZnO crystal
JP2000223683A5 (ja) 複合部材の分離方法、移設層の移設方法及びsoi基板の製造方法
JP2001039793A5 (enrdf_load_stackoverflow)
CN205223407U (zh) 一种生长氮化铝单晶用坩埚
CA2055675A1 (en) Method for forming crystal article
RU98121013A (ru) Монокристаллический sic и способ его получения
WO2002044446A3 (en) Process for controlling thermal history of vacancy-dominated, single crystal silicon
JPS55163835A (en) Selective liquid phase growth of on semiconductor region
JPS63186775U (enrdf_load_stackoverflow)
JPH0442911Y2 (enrdf_load_stackoverflow)
CN209759643U (zh) 石英舟表面处理炉
JPH04735U (enrdf_load_stackoverflow)
JPH0551963U (ja) 液相エピタキシャル成長用基板ホルダ
JPS5536983A (en) Liquid phase growth method
JPS54152465A (en) Manufacture of epitaxial wafer
JP2584957Y2 (ja) 気相成長装置
JPH0413852B2 (enrdf_load_stackoverflow)
JPS5286058A (en) Liquid phase epitaxial growth
JPS547861A (en) Liquid phase epitaxial growth method
JP2000212000A5 (enrdf_load_stackoverflow)
JPS62203271U (enrdf_load_stackoverflow)
JPS62101032A (ja) 半導体ウエハ−ス加工治具
JPS642074U (enrdf_load_stackoverflow)
EP1557485A4 (en) METHOD FOR PRODUCING A THIN FILM ON A BASE MATERIAL THROUGH A INTERMEDIATE LAYER