JP2001005168A - 近接場光露光用マスクおよびその作製方法 - Google Patents
近接場光露光用マスクおよびその作製方法Info
- Publication number
- JP2001005168A JP2001005168A JP17563199A JP17563199A JP2001005168A JP 2001005168 A JP2001005168 A JP 2001005168A JP 17563199 A JP17563199 A JP 17563199A JP 17563199 A JP17563199 A JP 17563199A JP 2001005168 A JP2001005168 A JP 2001005168A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- base material
- light
- shielding film
- field light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 239000000463 material Substances 0.000 claims abstract description 126
- 238000000034 method Methods 0.000 claims description 28
- 238000005530 etching Methods 0.000 claims description 7
- 238000005498 polishing Methods 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 12
- 238000010894 electron beam technology Methods 0.000 description 12
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- 239000004925 Acrylic resin Substances 0.000 description 8
- 229920000178 Acrylic resin Polymers 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 3
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 2
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000004380 ashing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17563199A JP2001005168A (ja) | 1999-06-22 | 1999-06-22 | 近接場光露光用マスクおよびその作製方法 |
| US09/598,452 US6338924B1 (en) | 1999-06-22 | 2000-06-22 | Photomask for near-field exposure having opening filled with transparent material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17563199A JP2001005168A (ja) | 1999-06-22 | 1999-06-22 | 近接場光露光用マスクおよびその作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001005168A true JP2001005168A (ja) | 2001-01-12 |
| JP2001005168A5 JP2001005168A5 (enExample) | 2005-06-09 |
Family
ID=15999470
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17563199A Pending JP2001005168A (ja) | 1999-06-22 | 1999-06-22 | 近接場光露光用マスクおよびその作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001005168A (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005093509A (ja) * | 2003-09-12 | 2005-04-07 | Canon Inc | 近接場露光用マスク、近接場光の発生方法、近接場露光用マスクの作製方法、近接場露光装置、近接場露光方法、微小素子の作製方法 |
| US7050144B2 (en) | 2002-05-07 | 2006-05-23 | Canon Kabushiki Kaisha | Photomask for near-field exposure and exposure apparatus including the photomask for making a pattern |
| JP2013210559A (ja) * | 2012-03-30 | 2013-10-10 | Toshiba Corp | 近接場露光用マスクおよびパターン形成方法 |
| JP2016018139A (ja) * | 2014-07-10 | 2016-02-01 | 株式会社ディスコ | 露光マスクの製造方法 |
-
1999
- 1999-06-22 JP JP17563199A patent/JP2001005168A/ja active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7050144B2 (en) | 2002-05-07 | 2006-05-23 | Canon Kabushiki Kaisha | Photomask for near-field exposure and exposure apparatus including the photomask for making a pattern |
| US7144685B2 (en) | 2002-05-07 | 2006-12-05 | Canon Kabushiki Kaisha | Method for making a pattern using near-field light exposure through a photomask |
| JP2005093509A (ja) * | 2003-09-12 | 2005-04-07 | Canon Inc | 近接場露光用マスク、近接場光の発生方法、近接場露光用マスクの作製方法、近接場露光装置、近接場露光方法、微小素子の作製方法 |
| JP2013210559A (ja) * | 2012-03-30 | 2013-10-10 | Toshiba Corp | 近接場露光用マスクおよびパターン形成方法 |
| JP2016018139A (ja) * | 2014-07-10 | 2016-02-01 | 株式会社ディスコ | 露光マスクの製造方法 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7018783B2 (en) | Fine structure and devices employing it | |
| US6913871B2 (en) | Fabricating sub-resolution structures in planar lightwave devices | |
| JPH1172631A (ja) | 光ファイバー加工用位相マスク及びその製造方法 | |
| JP3797462B2 (ja) | 回折格子作製方法 | |
| JPH1097052A (ja) | 露光量調節による位相反転マスクの製造方法 | |
| TWI770705B (zh) | 在半導體基板上以微影製程形成光學結構之方法 | |
| JP2001005168A (ja) | 近接場光露光用マスクおよびその作製方法 | |
| JPH11160510A5 (enExample) | ||
| US20240230969A1 (en) | Fabrication of optical gratings using a resist contoured based on grey-scale lithography | |
| CN121115208A (zh) | 使用深紫外辐射加工的电光装置 | |
| US6338924B1 (en) | Photomask for near-field exposure having opening filled with transparent material | |
| CA3161520A1 (en) | Vertically tapered spot size converter and method for fabricating the same | |
| JPH06148861A (ja) | フォトマスク及びその製造方法 | |
| JP2004051388A (ja) | 光学素子の表面加工方法 | |
| JP2001166109A (ja) | 短周期的構造を持つ曲面の形成方法および光学素子 | |
| JPH04186829A (ja) | 半導体装置の製造方法 | |
| US20050048409A1 (en) | Method of making an optical device in silicon | |
| JP3173803B2 (ja) | 回折格子の作成方法 | |
| JP2001066762A (ja) | 近接場光露光用マスクおよびその作製方法 | |
| JP3656789B2 (ja) | 成形型の製造方法 | |
| JPH11223714A (ja) | 回折格子作製用位相マスク及びその製造方法 | |
| CN114690548B (zh) | 目标结构的形成方法 | |
| KR100464353B1 (ko) | 레이저다이오드의 회절격자 제조방법 | |
| JPH047508A (ja) | 反射型光曲げ導波路の製造方法 | |
| JP2002292635A (ja) | スタンパ製造方法及び導光板 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20040902 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20040902 |
|
| A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20061130 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20061201 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070515 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20071002 |