JP2000517461A - 真空応用のための堅く薄いウィンドウ - Google Patents

真空応用のための堅く薄いウィンドウ

Info

Publication number
JP2000517461A
JP2000517461A JP10507084A JP50708498A JP2000517461A JP 2000517461 A JP2000517461 A JP 2000517461A JP 10507084 A JP10507084 A JP 10507084A JP 50708498 A JP50708498 A JP 50708498A JP 2000517461 A JP2000517461 A JP 2000517461A
Authority
JP
Japan
Prior art keywords
silicon
window
etching
layer
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10507084A
Other languages
English (en)
Japanese (ja)
Inventor
マイヤー,グレン,エイ.
シエロ,ディノ,アール.
マイアーズ,ブース,アール.
チェン,ハオ―リン
ワカロプロス,ジョージ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of California
Original Assignee
University of California San Diego UCSD
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of California San Diego UCSD filed Critical University of California San Diego UCSD
Publication of JP2000517461A publication Critical patent/JP2000517461A/ja
Pending legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B44DECORATIVE ARTS
    • B44CPRODUCING DECORATIVE EFFECTS; MOSAICS; TARSIA WORK; PAPERHANGING
    • B44C1/00Processes, not specifically provided for elsewhere, for producing decorative surface effects
    • B44C1/22Removing surface-material, e.g. by engraving, by etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J33/00Discharge tubes with provision for emergence of electrons or ions from the vessel; Lenard tubes
    • H01J33/02Details
    • H01J33/04Windows

Landscapes

  • Weting (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Drying Of Semiconductors (AREA)
JP10507084A 1996-07-19 1997-07-18 真空応用のための堅く薄いウィンドウ Pending JP2000517461A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/684,166 1996-07-19
US08/684,166 US6002202A (en) 1996-07-19 1996-07-19 Rigid thin windows for vacuum applications
PCT/US1997/012507 WO1998003353A1 (en) 1996-07-19 1997-07-18 Rigid thin windows for vacuum applications

Publications (1)

Publication Number Publication Date
JP2000517461A true JP2000517461A (ja) 2000-12-26

Family

ID=24746944

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10507084A Pending JP2000517461A (ja) 1996-07-19 1997-07-18 真空応用のための堅く薄いウィンドウ

Country Status (7)

Country Link
US (1) US6002202A (enExample)
EP (1) EP0912351B1 (enExample)
JP (1) JP2000517461A (enExample)
KR (1) KR20000067881A (enExample)
AU (1) AU3884997A (enExample)
DE (1) DE69711049T2 (enExample)
WO (1) WO1998003353A1 (enExample)

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JP2018506024A (ja) * 2014-12-19 2018-03-01 エナジー サイエンシーズ,インコーポレイティド 非一様断面を有する電子ビームウィンドウタイル

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US8212225B2 (en) * 2005-05-13 2012-07-03 State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of The University Of Oregon TEM grids for determination of structure-property relationships in nanotechnology
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US7737424B2 (en) 2007-06-01 2010-06-15 Moxtek, Inc. X-ray window with grid structure
US7709820B2 (en) * 2007-06-01 2010-05-04 Moxtek, Inc. Radiation window with coated silicon support structure
JP5037241B2 (ja) * 2007-07-04 2012-09-26 スパンション エルエルシー 半導体装置の製造方法及び半導体装置の製造装置
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US7768267B2 (en) * 2007-07-11 2010-08-03 Brooks Automation, Inc. Ionization gauge with a cold electron source
US8498381B2 (en) 2010-10-07 2013-07-30 Moxtek, Inc. Polymer layer on X-ray window
US9305735B2 (en) 2007-09-28 2016-04-05 Brigham Young University Reinforced polymer x-ray window
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US8247971B1 (en) 2009-03-19 2012-08-21 Moxtek, Inc. Resistively heated small planar filament
US7983394B2 (en) 2009-12-17 2011-07-19 Moxtek, Inc. Multiple wavelength X-ray source
CA2813812C (en) 2010-03-08 2016-08-23 Alliance For Sustainable Energy, Llc Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices
FI20105626A0 (fi) 2010-06-03 2010-06-03 Hs Foils Oy Erittäin ohut berylliumikkuna ja menetelmä sen valmistamiseksi
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US8526574B2 (en) 2010-09-24 2013-09-03 Moxtek, Inc. Capacitor AC power coupling across high DC voltage differential
US8804910B1 (en) 2011-01-24 2014-08-12 Moxtek, Inc. Reduced power consumption X-ray source
US8750458B1 (en) 2011-02-17 2014-06-10 Moxtek, Inc. Cold electron number amplifier
US8929515B2 (en) 2011-02-23 2015-01-06 Moxtek, Inc. Multiple-size support for X-ray window
US9174412B2 (en) 2011-05-16 2015-11-03 Brigham Young University High strength carbon fiber composite wafers for microfabrication
US8989354B2 (en) 2011-05-16 2015-03-24 Brigham Young University Carbon composite support structure
US9076628B2 (en) 2011-05-16 2015-07-07 Brigham Young University Variable radius taper x-ray window support structure
JP6245794B2 (ja) * 2011-07-29 2017-12-13 キヤノン株式会社 遮蔽格子の製造方法
US8761344B2 (en) 2011-12-29 2014-06-24 Moxtek, Inc. Small x-ray tube with electron beam control optics
US9564252B2 (en) 2012-02-15 2017-02-07 Hs Foils Oy Method and arrangement for manufacturing a radiation window
US9299469B2 (en) 2012-03-11 2016-03-29 Mark Larson Radiation window with support structure
US9173623B2 (en) 2013-04-19 2015-11-03 Samuel Soonho Lee X-ray tube and receiver inside mouth
GB2556258B (en) 2015-06-19 2021-07-14 Larson Mark High-performance, low-stress support structure with membrane
US10170299B2 (en) * 2015-07-01 2019-01-01 Applied Materials, Inc. Method to reduce trap-induced capacitance in interconnect dielectric barrier stack
FI20155881A (fi) 2015-11-26 2017-05-27 Hs Foils Oy Menetelmä säteilyikkunan valmistamiseksi ja säteilyikkuna
CN105914121B (zh) * 2016-04-26 2019-05-14 苏州原位芯片科技有限责任公司 三角形单晶硅支撑粱结构式x射线氮化硅窗口构造及其制备方法
JP7191023B2 (ja) * 2016-12-22 2022-12-16 アプライド マテリアルズ インコーポレイテッド 下位構造材料に直接rf曝露しない共形の気密性誘電体封入のためのsibn膜
WO2022046837A1 (en) * 2020-08-27 2022-03-03 Bruker Nano, Inc. Silicon nitride x-ray window and method of manufacture for x-ray detector use
US11410838B2 (en) 2020-09-03 2022-08-09 Thermo Finnigan Llc Long life electron multiplier

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018506024A (ja) * 2014-12-19 2018-03-01 エナジー サイエンシーズ,インコーポレイティド 非一様断面を有する電子ビームウィンドウタイル

Also Published As

Publication number Publication date
EP0912351A4 (enExample) 1999-05-06
EP0912351A1 (en) 1999-05-06
AU3884997A (en) 1998-02-10
KR20000067881A (ko) 2000-11-25
DE69711049D1 (de) 2002-04-18
EP0912351B1 (en) 2002-03-13
US6002202A (en) 1999-12-14
WO1998003353A1 (en) 1998-01-29
DE69711049T2 (de) 2002-10-24

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