JP2000501238A - 低抵抗接点半導体ダイオード - Google Patents
低抵抗接点半導体ダイオードInfo
- Publication number
- JP2000501238A JP2000501238A JP9520270A JP52027097A JP2000501238A JP 2000501238 A JP2000501238 A JP 2000501238A JP 9520270 A JP9520270 A JP 9520270A JP 52027097 A JP52027097 A JP 52027097A JP 2000501238 A JP2000501238 A JP 2000501238A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type material
- type
- highly doped
- doped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 30
- 239000000463 material Substances 0.000 claims abstract description 107
- 230000005855 radiation Effects 0.000 claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 238000000605 extraction Methods 0.000 claims description 6
- 230000005669 field effect Effects 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 3
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 230000005641 tunneling Effects 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- 239000000969 carrier Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000007717 exclusion Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/832—Electrodes characterised by their material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/82—Heterojunctions
- H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3095—Tunnel junction
Landscapes
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB9524414.1A GB9524414D0 (en) | 1995-11-29 | 1995-11-29 | Low resistance contact semiconductor device |
| GB9524414.1 | 1995-11-29 | ||
| PCT/GB1996/002914 WO1997020353A1 (en) | 1995-11-29 | 1996-11-27 | Low resistance contact semiconductor diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000501238A true JP2000501238A (ja) | 2000-02-02 |
| JP2000501238A5 JP2000501238A5 (enExample) | 2004-10-21 |
Family
ID=10784642
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9520270A Pending JP2000501238A (ja) | 1995-11-29 | 1996-11-27 | 低抵抗接点半導体ダイオード |
Country Status (10)
| Country | Link |
|---|---|
| US (2) | US6133590A (enExample) |
| EP (1) | EP0864180B1 (enExample) |
| JP (1) | JP2000501238A (enExample) |
| KR (1) | KR19990071863A (enExample) |
| AU (1) | AU721907B2 (enExample) |
| CA (1) | CA2238952C (enExample) |
| DE (1) | DE69632961T2 (enExample) |
| GB (2) | GB9524414D0 (enExample) |
| RU (1) | RU2166222C2 (enExample) |
| WO (1) | WO1997020353A1 (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006313773A (ja) * | 2005-05-06 | 2006-11-16 | Sumitomo Electric Ind Ltd | 半導体装置およびその製造方法 |
| WO2009113685A1 (ja) * | 2008-03-14 | 2009-09-17 | 旭化成エレクトロニクス株式会社 | 赤外線発光素子 |
| WO2010131639A1 (ja) * | 2009-05-12 | 2010-11-18 | 国立大学法人筑波大学 | 半導体装置およびその製造方法並びに太陽電池 |
| US8063408B2 (en) | 2008-11-11 | 2011-11-22 | Sumitomo Electric Industries, Ltd. | Integrated semiconductor optical device and optical apparatus using the same |
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ES2011531A6 (es) * | 1987-12-10 | 1990-01-16 | Poyer Michael | Dispositivo de seguridad para aparatos grabadores o reproductores de cassettes de video. |
| DE19703612A1 (de) * | 1997-01-31 | 1998-08-06 | Siemens Ag | Halbleiterlaser-Bauelement |
| US5936266A (en) * | 1997-07-22 | 1999-08-10 | The Board Of Trustees Of The University Of Illinois | Semiconductor devices and methods with tunnel contact hole sources |
| GB0012925D0 (en) | 2000-05-30 | 2000-07-19 | Secr Defence | Bipolar transistor |
| DE10057698A1 (de) * | 2000-11-21 | 2002-06-06 | Osram Opto Semiconductors Gmbh | Übereinander gestapelte Halbleiter-Diodenlaser |
| US7065124B2 (en) | 2000-11-28 | 2006-06-20 | Finlsar Corporation | Electron affinity engineered VCSELs |
| US6905900B1 (en) | 2000-11-28 | 2005-06-14 | Finisar Corporation | Versatile method and system for single mode VCSELs |
| GB0030204D0 (en) * | 2000-12-12 | 2001-01-24 | Secr Defence | Reduced noise semiconductor photodetector |
| RU2200358C1 (ru) * | 2001-06-05 | 2003-03-10 | Хан Владимир Александрович | Полупроводниковый излучающий диод |
| JP2003086898A (ja) * | 2001-09-07 | 2003-03-20 | Nec Corp | 窒化ガリウム系半導体レーザ |
| US6965626B2 (en) | 2002-09-03 | 2005-11-15 | Finisar Corporation | Single mode VCSEL |
| US6813293B2 (en) | 2002-11-21 | 2004-11-02 | Finisar Corporation | Long wavelength VCSEL with tunnel junction, and implant |
| US7170097B2 (en) * | 2003-02-14 | 2007-01-30 | Cree, Inc. | Inverted light emitting diode on conductive substrate |
| US7298942B2 (en) | 2003-06-06 | 2007-11-20 | Finisar Corporation | Pluggable optical optic system having a lens fiber stop |
| US7433381B2 (en) | 2003-06-25 | 2008-10-07 | Finisar Corporation | InP based long wavelength VCSEL |
| US7560750B2 (en) * | 2003-06-26 | 2009-07-14 | Kyocera Corporation | Solar cell device |
| US7277461B2 (en) | 2003-06-27 | 2007-10-02 | Finisar Corporation | Dielectric VCSEL gain guide |
| US7054345B2 (en) | 2003-06-27 | 2006-05-30 | Finisar Corporation | Enhanced lateral oxidation |
| US7075962B2 (en) | 2003-06-27 | 2006-07-11 | Finisar Corporation | VCSEL having thermal management |
| US6961489B2 (en) | 2003-06-30 | 2005-11-01 | Finisar Corporation | High speed optical system |
| US7149383B2 (en) | 2003-06-30 | 2006-12-12 | Finisar Corporation | Optical system with reduced back reflection |
| US7210857B2 (en) | 2003-07-16 | 2007-05-01 | Finisar Corporation | Optical coupling system |
| US6887801B2 (en) | 2003-07-18 | 2005-05-03 | Finisar Corporation | Edge bead control method and apparatus |
| US7019330B2 (en) * | 2003-08-28 | 2006-03-28 | Lumileds Lighting U.S., Llc | Resonant cavity light emitting device |
| US7031363B2 (en) | 2003-10-29 | 2006-04-18 | Finisar Corporation | Long wavelength VCSEL device processing |
| DE102004047313B3 (de) * | 2004-09-29 | 2006-03-30 | Siced Electronics Development Gmbh & Co. Kg | Halbleiteranordnung mit einem Tunnelkontakt und Verfahren zu deren Herstellung |
| US7274040B2 (en) * | 2004-10-06 | 2007-09-25 | Philips Lumileds Lighting Company, Llc | Contact and omnidirectional reflective mirror for flip chipped light emitting devices |
| US7535034B2 (en) | 2006-02-27 | 2009-05-19 | The Board Of Trustees Of The University Of Illinois | PNP light emitting transistor and method |
| US7953133B2 (en) | 2007-10-12 | 2011-05-31 | The Board Of Trustees Of The University Of Illinois | Light emitting and lasing semiconductor devices and methods |
| US7813396B2 (en) | 2007-10-12 | 2010-10-12 | The Board Of Trustees Of The University Of Illinois | Transistor laser devices and methods |
| GB201000756D0 (en) | 2010-01-18 | 2010-03-03 | Gas Sensing Solutions Ltd | Gas sensor with radiation guide |
| GB201018417D0 (en) | 2010-11-01 | 2010-12-15 | Gas Sensing Solutions Ltd | Apparatus and method for generating light pulses from LEDs in optical absorption gas sensors |
| GB201018418D0 (en) | 2010-11-01 | 2010-12-15 | Gas Sensing Solutions Ltd | Temperature calibration methods and apparatus for optical absorption gas sensors, and optical absorption gas sensors thereby calibrated |
| US20210184434A1 (en) * | 2018-08-24 | 2021-06-17 | Sony Semiconductor Solutions Corporation | Light-emitting device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2614135B1 (fr) * | 1987-04-14 | 1989-06-30 | Telecommunications Sa | Photodiode hgcdte a reponse rapide |
| GB9100351D0 (en) * | 1991-01-08 | 1991-02-20 | Secr Defence | Semiconductor heterostructure device |
| US5166761A (en) * | 1991-04-01 | 1992-11-24 | Midwest Research Institute | Tunnel junction multiple wavelength light-emitting diodes |
| US5338944A (en) * | 1993-09-22 | 1994-08-16 | Cree Research, Inc. | Blue light-emitting diode with degenerate junction structure |
| US5892784A (en) * | 1994-10-27 | 1999-04-06 | Hewlett-Packard Company | N-drive p-common surface emitting laser fabricated on n+ substrate |
-
1995
- 1995-11-29 GB GBGB9524414.1A patent/GB9524414D0/en active Pending
-
1996
- 1996-11-27 WO PCT/GB1996/002914 patent/WO1997020353A1/en not_active Ceased
- 1996-11-27 US US09/068,943 patent/US6133590A/en not_active Expired - Lifetime
- 1996-11-27 CA CA002238952A patent/CA2238952C/en not_active Expired - Lifetime
- 1996-11-27 RU RU98112013/28A patent/RU2166222C2/ru active
- 1996-11-27 DE DE69632961T patent/DE69632961T2/de not_active Expired - Lifetime
- 1996-11-27 GB GB9810627A patent/GB2321783B/en not_active Expired - Fee Related
- 1996-11-27 EP EP96939228A patent/EP0864180B1/en not_active Expired - Lifetime
- 1996-11-27 JP JP9520270A patent/JP2000501238A/ja active Pending
- 1996-11-27 AU AU76360/96A patent/AU721907B2/en not_active Expired
- 1996-11-27 KR KR1019980704147A patent/KR19990071863A/ko not_active Abandoned
-
2000
- 2000-08-11 US US09/636,741 patent/US6455879B1/en not_active Expired - Fee Related
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006313773A (ja) * | 2005-05-06 | 2006-11-16 | Sumitomo Electric Ind Ltd | 半導体装置およびその製造方法 |
| WO2009113685A1 (ja) * | 2008-03-14 | 2009-09-17 | 旭化成エレクトロニクス株式会社 | 赤外線発光素子 |
| US8309980B2 (en) | 2008-03-14 | 2012-11-13 | Asahi Kasei Microdevices Corporation | Infrared light emitting device |
| JP2014013944A (ja) * | 2008-03-14 | 2014-01-23 | Asahi Kasei Electronics Co Ltd | 赤外線発光素子 |
| JP5526360B2 (ja) * | 2008-03-14 | 2014-06-18 | 旭化成エレクトロニクス株式会社 | 赤外線発光素子 |
| US8063408B2 (en) | 2008-11-11 | 2011-11-22 | Sumitomo Electric Industries, Ltd. | Integrated semiconductor optical device and optical apparatus using the same |
| WO2010131639A1 (ja) * | 2009-05-12 | 2010-11-18 | 国立大学法人筑波大学 | 半導体装置およびその製造方法並びに太陽電池 |
| CN102422438A (zh) * | 2009-05-12 | 2012-04-18 | 国立大学法人筑波大学 | 半导体装置及其制造方法以及太阳能电池 |
| US8502191B2 (en) | 2009-05-12 | 2013-08-06 | University Of Tsukuba | Semiconductor device, manufacturing method therefor, and solar cell |
| CN102422438B (zh) * | 2009-05-12 | 2014-07-09 | 国立大学法人筑波大学 | 半导体装置及其制造方法以及太阳能电池 |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2321783B (en) | 2000-10-18 |
| US6133590A (en) | 2000-10-17 |
| GB9810627D0 (en) | 1998-07-15 |
| AU721907B2 (en) | 2000-07-20 |
| RU2166222C2 (ru) | 2001-04-27 |
| US6455879B1 (en) | 2002-09-24 |
| GB2321783A (en) | 1998-08-05 |
| DE69632961D1 (de) | 2004-08-26 |
| CA2238952A1 (en) | 1997-06-05 |
| EP0864180B1 (en) | 2004-07-21 |
| DE69632961T2 (de) | 2005-08-25 |
| EP0864180A1 (en) | 1998-09-16 |
| GB9524414D0 (en) | 1996-01-31 |
| WO1997020353A1 (en) | 1997-06-05 |
| CA2238952C (en) | 2004-05-25 |
| AU7636096A (en) | 1997-06-19 |
| KR19990071863A (ko) | 1999-09-27 |
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Legal Events
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