JP2000501238A5 - - Google Patents

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Publication number
JP2000501238A5
JP2000501238A5 JP1997520270A JP52027097A JP2000501238A5 JP 2000501238 A5 JP2000501238 A5 JP 2000501238A5 JP 1997520270 A JP1997520270 A JP 1997520270A JP 52027097 A JP52027097 A JP 52027097A JP 2000501238 A5 JP2000501238 A5 JP 2000501238A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1997520270A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000501238A (ja
Filing date
Publication date
Priority claimed from GBGB9524414.1A external-priority patent/GB9524414D0/en
Application filed filed Critical
Publication of JP2000501238A publication Critical patent/JP2000501238A/ja
Publication of JP2000501238A5 publication Critical patent/JP2000501238A5/ja
Pending legal-status Critical Current

Links

JP9520270A 1995-11-29 1996-11-27 低抵抗接点半導体ダイオード Pending JP2000501238A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB9524414.1A GB9524414D0 (en) 1995-11-29 1995-11-29 Low resistance contact semiconductor device
GB9524414.1 1995-11-29
PCT/GB1996/002914 WO1997020353A1 (en) 1995-11-29 1996-11-27 Low resistance contact semiconductor diode

Publications (2)

Publication Number Publication Date
JP2000501238A JP2000501238A (ja) 2000-02-02
JP2000501238A5 true JP2000501238A5 (enExample) 2004-10-21

Family

ID=10784642

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9520270A Pending JP2000501238A (ja) 1995-11-29 1996-11-27 低抵抗接点半導体ダイオード

Country Status (10)

Country Link
US (2) US6133590A (enExample)
EP (1) EP0864180B1 (enExample)
JP (1) JP2000501238A (enExample)
KR (1) KR19990071863A (enExample)
AU (1) AU721907B2 (enExample)
CA (1) CA2238952C (enExample)
DE (1) DE69632961T2 (enExample)
GB (2) GB9524414D0 (enExample)
RU (1) RU2166222C2 (enExample)
WO (1) WO1997020353A1 (enExample)

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ES2011531A6 (es) * 1987-12-10 1990-01-16 Poyer Michael Dispositivo de seguridad para aparatos grabadores o reproductores de cassettes de video.
DE19703612A1 (de) * 1997-01-31 1998-08-06 Siemens Ag Halbleiterlaser-Bauelement
US5936266A (en) * 1997-07-22 1999-08-10 The Board Of Trustees Of The University Of Illinois Semiconductor devices and methods with tunnel contact hole sources
GB0012925D0 (en) 2000-05-30 2000-07-19 Secr Defence Bipolar transistor
DE10057698A1 (de) * 2000-11-21 2002-06-06 Osram Opto Semiconductors Gmbh Übereinander gestapelte Halbleiter-Diodenlaser
US7065124B2 (en) 2000-11-28 2006-06-20 Finlsar Corporation Electron affinity engineered VCSELs
US6905900B1 (en) 2000-11-28 2005-06-14 Finisar Corporation Versatile method and system for single mode VCSELs
GB0030204D0 (en) * 2000-12-12 2001-01-24 Secr Defence Reduced noise semiconductor photodetector
RU2200358C1 (ru) * 2001-06-05 2003-03-10 Хан Владимир Александрович Полупроводниковый излучающий диод
JP2003086898A (ja) * 2001-09-07 2003-03-20 Nec Corp 窒化ガリウム系半導体レーザ
US6965626B2 (en) 2002-09-03 2005-11-15 Finisar Corporation Single mode VCSEL
US6813293B2 (en) 2002-11-21 2004-11-02 Finisar Corporation Long wavelength VCSEL with tunnel junction, and implant
US7170097B2 (en) * 2003-02-14 2007-01-30 Cree, Inc. Inverted light emitting diode on conductive substrate
US7298942B2 (en) 2003-06-06 2007-11-20 Finisar Corporation Pluggable optical optic system having a lens fiber stop
US7433381B2 (en) 2003-06-25 2008-10-07 Finisar Corporation InP based long wavelength VCSEL
US7560750B2 (en) * 2003-06-26 2009-07-14 Kyocera Corporation Solar cell device
US7277461B2 (en) 2003-06-27 2007-10-02 Finisar Corporation Dielectric VCSEL gain guide
US7054345B2 (en) 2003-06-27 2006-05-30 Finisar Corporation Enhanced lateral oxidation
US7075962B2 (en) 2003-06-27 2006-07-11 Finisar Corporation VCSEL having thermal management
US6961489B2 (en) 2003-06-30 2005-11-01 Finisar Corporation High speed optical system
US7149383B2 (en) 2003-06-30 2006-12-12 Finisar Corporation Optical system with reduced back reflection
US7210857B2 (en) 2003-07-16 2007-05-01 Finisar Corporation Optical coupling system
US6887801B2 (en) 2003-07-18 2005-05-03 Finisar Corporation Edge bead control method and apparatus
US7019330B2 (en) * 2003-08-28 2006-03-28 Lumileds Lighting U.S., Llc Resonant cavity light emitting device
US7031363B2 (en) 2003-10-29 2006-04-18 Finisar Corporation Long wavelength VCSEL device processing
DE102004047313B3 (de) * 2004-09-29 2006-03-30 Siced Electronics Development Gmbh & Co. Kg Halbleiteranordnung mit einem Tunnelkontakt und Verfahren zu deren Herstellung
US7274040B2 (en) * 2004-10-06 2007-09-25 Philips Lumileds Lighting Company, Llc Contact and omnidirectional reflective mirror for flip chipped light emitting devices
JP2006313773A (ja) * 2005-05-06 2006-11-16 Sumitomo Electric Ind Ltd 半導体装置およびその製造方法
US7535034B2 (en) 2006-02-27 2009-05-19 The Board Of Trustees Of The University Of Illinois PNP light emitting transistor and method
US7953133B2 (en) 2007-10-12 2011-05-31 The Board Of Trustees Of The University Of Illinois Light emitting and lasing semiconductor devices and methods
US7813396B2 (en) 2007-10-12 2010-10-12 The Board Of Trustees Of The University Of Illinois Transistor laser devices and methods
TWI427824B (zh) * 2008-03-14 2014-02-21 旭化成電子材料元件股份有限公司 紅外線發光元件
JP5093063B2 (ja) * 2008-11-11 2012-12-05 住友電気工業株式会社 集積化半導体光素子及び半導体光装置
TWI407575B (zh) * 2009-05-12 2013-09-01 Univ Tsukuba A semiconductor device, a method for manufacturing the same, and a solar battery
GB201000756D0 (en) 2010-01-18 2010-03-03 Gas Sensing Solutions Ltd Gas sensor with radiation guide
GB201018417D0 (en) 2010-11-01 2010-12-15 Gas Sensing Solutions Ltd Apparatus and method for generating light pulses from LEDs in optical absorption gas sensors
GB201018418D0 (en) 2010-11-01 2010-12-15 Gas Sensing Solutions Ltd Temperature calibration methods and apparatus for optical absorption gas sensors, and optical absorption gas sensors thereby calibrated
US20210184434A1 (en) * 2018-08-24 2021-06-17 Sony Semiconductor Solutions Corporation Light-emitting device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2614135B1 (fr) * 1987-04-14 1989-06-30 Telecommunications Sa Photodiode hgcdte a reponse rapide
GB9100351D0 (en) * 1991-01-08 1991-02-20 Secr Defence Semiconductor heterostructure device
US5166761A (en) * 1991-04-01 1992-11-24 Midwest Research Institute Tunnel junction multiple wavelength light-emitting diodes
US5338944A (en) * 1993-09-22 1994-08-16 Cree Research, Inc. Blue light-emitting diode with degenerate junction structure
US5892784A (en) * 1994-10-27 1999-04-06 Hewlett-Packard Company N-drive p-common surface emitting laser fabricated on n+ substrate

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