JP2000340798A5 - - Google Patents
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- JP2000340798A5 JP2000340798A5 JP2000072631A JP2000072631A JP2000340798A5 JP 2000340798 A5 JP2000340798 A5 JP 2000340798A5 JP 2000072631 A JP2000072631 A JP 2000072631A JP 2000072631 A JP2000072631 A JP 2000072631A JP 2000340798 A5 JP2000340798 A5 JP 2000340798A5
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000072631A JP4578609B2 (ja) | 1999-03-19 | 2000-03-15 | 電気光学装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7696799 | 1999-03-19 | ||
| JP11-76967 | 1999-03-19 | ||
| JP2000072631A JP4578609B2 (ja) | 1999-03-19 | 2000-03-15 | 電気光学装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000340798A JP2000340798A (ja) | 2000-12-08 |
| JP2000340798A5 true JP2000340798A5 (de) | 2007-05-10 |
| JP4578609B2 JP4578609B2 (ja) | 2010-11-10 |
Family
ID=26418070
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000072631A Expired - Fee Related JP4578609B2 (ja) | 1999-03-19 | 2000-03-15 | 電気光学装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4578609B2 (de) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7701134B2 (en) | 1999-06-04 | 2010-04-20 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix display device with improved operating performance |
| US8154015B2 (en) | 2001-11-09 | 2012-04-10 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device including thin film transistor |
| US8890172B2 (en) | 1999-06-04 | 2014-11-18 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing an electro-optical device |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6512504B1 (en) | 1999-04-27 | 2003-01-28 | Semiconductor Energy Laborayory Co., Ltd. | Electronic device and electronic apparatus |
| TW527735B (en) | 1999-06-04 | 2003-04-11 | Semiconductor Energy Lab | Electro-optical device |
| TW512543B (en) | 1999-06-28 | 2002-12-01 | Semiconductor Energy Lab | Method of manufacturing an electro-optical device |
| JP2001092413A (ja) | 1999-09-24 | 2001-04-06 | Semiconductor Energy Lab Co Ltd | Ｅｌ表示装置および電子装置 |
| TW468283B (en) | 1999-10-12 | 2001-12-11 | Semiconductor Energy Lab | EL display device and a method of manufacturing the same |
| TW480722B (en) | 1999-10-12 | 2002-03-21 | Semiconductor Energy Lab | Manufacturing method of electro-optical device |
| TW471011B (en) | 1999-10-13 | 2002-01-01 | Semiconductor Energy Lab | Thin film forming apparatus |
| TW586141B (en) * | 2001-01-19 | 2004-05-01 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
| JP3986051B2 (ja) | 2002-04-30 | 2007-10-03 | 株式会社半導体エネルギー研究所 | 発光装置、電子機器 |
| US7002302B2 (en) | 2002-10-07 | 2006-02-21 | Samsung Sdi Co., Ltd. | Flat panel display |
| JP2004145011A (ja) | 2002-10-24 | 2004-05-20 | Seiko Epson Corp | 配線基板、回路基板、電気光学装置及びその製造方法、電子機器 |
| KR101267499B1 (ko) * | 2005-08-18 | 2013-05-31 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판의 제조 방법 및 그에 의해 제조된박막 트랜지스터 |
| JP5005953B2 (ja) * | 2006-05-18 | 2012-08-22 | 株式会社ジャパンディスプレイセントラル | 薄膜トランジスタ |
| JP5589359B2 (ja) * | 2009-01-05 | 2014-09-17 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
| JP5256144B2 (ja) * | 2009-08-03 | 2013-08-07 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR20190063230A (ko) * | 2017-11-29 | 2019-06-07 | 엘지디스플레이 주식회사 | 박막트랜지스터 어레이 기판 및 그를 포함하는 유기발광표시장치 |
| CN113661577A (zh) * | 2019-04-09 | 2021-11-16 | 夏普株式会社 | 显示装置以及制造方法 |
| CN116013962B (zh) * | 2023-03-24 | 2023-07-18 | 合肥晶合集成电路股份有限公司 | 半导体器件的制备方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06260499A (ja) * | 1993-03-02 | 1994-09-16 | Casio Comput Co Ltd | 薄膜トランジスタおよびその製造方法 |
| JP3326013B2 (ja) * | 1994-07-14 | 2002-09-17 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JPH09191111A (ja) * | 1995-11-07 | 1997-07-22 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP3499381B2 (ja) * | 1996-09-21 | 2004-02-23 | 株式会社半導体エネルギー研究所 | アクティブマトリクス型表示装置およびその作製方法 |
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2000
- 2000-03-15 JP JP2000072631A patent/JP4578609B2/ja not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7701134B2 (en) | 1999-06-04 | 2010-04-20 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix display device with improved operating performance |
| US7741775B2 (en) | 1999-06-04 | 2010-06-22 | Semiconductor Energy Laboratories Co., Ltd. | Electro-optical device and electronic device |
| US8890172B2 (en) | 1999-06-04 | 2014-11-18 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing an electro-optical device |
| US9123854B2 (en) | 1999-06-04 | 2015-09-01 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and electronic device |
| US9368680B2 (en) | 1999-06-04 | 2016-06-14 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and electronic device |
| US8154015B2 (en) | 2001-11-09 | 2012-04-10 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device including thin film transistor |