JP2000340619A - 半導体装置の製造不良解析方法及びシステム - Google Patents

半導体装置の製造不良解析方法及びシステム

Info

Publication number
JP2000340619A
JP2000340619A JP11150237A JP15023799A JP2000340619A JP 2000340619 A JP2000340619 A JP 2000340619A JP 11150237 A JP11150237 A JP 11150237A JP 15023799 A JP15023799 A JP 15023799A JP 2000340619 A JP2000340619 A JP 2000340619A
Authority
JP
Japan
Prior art keywords
information
defect
pattern
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11150237A
Other languages
English (en)
Japanese (ja)
Inventor
Masayuki Kuwabara
雅之 桑原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Seimitsu Co Ltd
Original Assignee
Tokyo Seimitsu Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Seimitsu Co Ltd filed Critical Tokyo Seimitsu Co Ltd
Priority to JP11150237A priority Critical patent/JP2000340619A/ja
Priority to TW089105132A priority patent/TW442882B/zh
Priority to KR1020000018912A priority patent/KR20010006977A/ko
Publication of JP2000340619A publication Critical patent/JP2000340619A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Tests Of Electronic Circuits (AREA)
JP11150237A 1999-05-28 1999-05-28 半導体装置の製造不良解析方法及びシステム Pending JP2000340619A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP11150237A JP2000340619A (ja) 1999-05-28 1999-05-28 半導体装置の製造不良解析方法及びシステム
TW089105132A TW442882B (en) 1999-05-28 2000-03-21 Method and system for analyzing a production failure in a semiconductor device
KR1020000018912A KR20010006977A (ko) 1999-05-28 2000-04-11 반도체 디바이스 내의 제조 실패 분석 방법 및 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11150237A JP2000340619A (ja) 1999-05-28 1999-05-28 半導体装置の製造不良解析方法及びシステム

Publications (1)

Publication Number Publication Date
JP2000340619A true JP2000340619A (ja) 2000-12-08

Family

ID=15492567

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11150237A Pending JP2000340619A (ja) 1999-05-28 1999-05-28 半導体装置の製造不良解析方法及びシステム

Country Status (3)

Country Link
JP (1) JP2000340619A (ko)
KR (1) KR20010006977A (ko)
TW (1) TW442882B (ko)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005044949A (ja) * 2003-07-25 2005-02-17 Hitachi High-Technologies Corp 半導体チップの選別装置、半導体チップの選別方法、及び半導体チップの製造方法
JP2006513561A (ja) * 2002-12-18 2006-04-20 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド パラレル欠陥検出
JP2007537445A (ja) * 2004-05-14 2007-12-20 フォトン・ダイナミクス・インコーポレーテッド オンデマンド自動光学検査サブシステムを用いたｔｆｔｌｃｄパネルの改善された検査
CN101311737B (zh) * 2007-05-23 2010-11-10 中芯国际集成电路制造(上海)有限公司 晶圆质量控制方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030087130A (ko) * 2002-05-06 2003-11-13 동부전자 주식회사 반도체 소자의 불량 분석 장치 및 방법
US11600505B2 (en) * 2018-10-31 2023-03-07 Taiwan Semiconductor Manufacturing Co., Ltd. Systems and methods for systematic physical failure analysis (PFA) fault localization

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006513561A (ja) * 2002-12-18 2006-04-20 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド パラレル欠陥検出
JP2005044949A (ja) * 2003-07-25 2005-02-17 Hitachi High-Technologies Corp 半導体チップの選別装置、半導体チップの選別方法、及び半導体チップの製造方法
JP2007537445A (ja) * 2004-05-14 2007-12-20 フォトン・ダイナミクス・インコーポレーテッド オンデマンド自動光学検査サブシステムを用いたｔｆｔｌｃｄパネルの改善された検査
CN101311737B (zh) * 2007-05-23 2010-11-10 中芯国际集成电路制造(上海)有限公司 晶圆质量控制方法

Also Published As

Publication number Publication date
KR20010006977A (ko) 2001-01-26
TW442882B (en) 2001-06-23

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