JP2000332289A5 - - Google Patents
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- Publication number
- JP2000332289A5 JP2000332289A5 JP1999139632A JP13963299A JP2000332289A5 JP 2000332289 A5 JP2000332289 A5 JP 2000332289A5 JP 1999139632 A JP1999139632 A JP 1999139632A JP 13963299 A JP13963299 A JP 13963299A JP 2000332289 A5 JP2000332289 A5 JP 2000332289A5
- Authority
- JP
- Japan
- Prior art keywords
- group iii
- nitride semiconductor
- layer
- group
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 description 10
- 150000004767 nitrides Chemical class 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 125000000962 organic group Chemical group 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical class [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- -1 nitrate compound Chemical class 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13963299A JP4277361B2 (ja) | 1999-05-20 | 1999-05-20 | Ｉｉｉ族窒化物半導体素子の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13963299A JP4277361B2 (ja) | 1999-05-20 | 1999-05-20 | Ｉｉｉ族窒化物半導体素子の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000332289A JP2000332289A (ja) | 2000-11-30 |
| JP2000332289A5 true JP2000332289A5 (https=) | 2005-11-17 |
| JP4277361B2 JP4277361B2 (ja) | 2009-06-10 |
Family
ID=15249810
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13963299A Expired - Lifetime JP4277361B2 (ja) | 1999-05-20 | 1999-05-20 | Ｉｉｉ族窒化物半導体素子の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4277361B2 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3763753B2 (ja) | 2001-06-05 | 2006-04-05 | 豊田合成株式会社 | Ｉｉｉ族窒化物系化合物半導体素子及びその製造方法 |
| JP6090899B2 (ja) * | 2012-09-06 | 2017-03-08 | パナソニック株式会社 | エピタキシャルウェハの製造方法 |
| JP6120204B2 (ja) * | 2012-09-06 | 2017-04-26 | パナソニック株式会社 | エピタキシャルウェハ及びその製造方法、紫外発光デバイス |
-
1999
- 1999-05-20 JP JP13963299A patent/JP4277361B2/ja not_active Expired - Lifetime
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