JP2000323701A - Semiconductor device and its manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device which can be made compact and highly integrated, and its manufacture. SOLUTION: The semiconductor device can be obtained which has circuit elements 2 on both surfaces of a silicon substrate, so that the circuit elements 2 are electrically connected through a conductive film 4 on a through hole 3, and this structure enables the formation of circuit elements, which are about twice as many as before for the same size of the semiconductor device, and is of high integration.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor device and a method for manufacturing the same.

[0002]

2. Description of the Related Art An example of the prior art will be described below with reference to the drawings. FIG. 14 is a sectional view showing a conventional semiconductor device. As shown in FIG. 14, the circuit element 2 is formed only on one surface of the silicon substrate 1.

When the above semiconductor device is mounted on a substrate or the like, as shown in FIG. 15, a projecting electrode 5 is provided on a terminal of a circuit element 2 formed on a silicon substrate 1, and To the semiconductor device and the substrate 1 via a connection material 6 such as a conductive adhesive or solder.
1 and the sealing resin 7 is poured and cured.

[0004]

The above-described semiconductor device has the following problems. 2. Description of the Related Art Higher integration of circuit elements formed on a silicon substrate has been pursued with the advancement of functions of semiconductor devices, but circuit elements have been formed only on one surface of the silicon substrate. This imposes restrictions on designing circuit elements formed on a silicon substrate.

In order to enhance the function of a semiconductor device, it is necessary to increase the area in which circuit elements are formed. In a conventional structure in which circuit elements are formed only on one surface of a silicon substrate, the size of the semiconductor device must be increased. Did not. The increase in the size of the semiconductor device naturally means that the number of pieces to be taken from one silicon wafer is small, the cost is high, and the area for mounting the semiconductor device on the substrate is also large. When the mounting area of the semiconductor device is large, a stress received due to a difference in thermal expansion coefficient between the semiconductor device and the substrate on which the wiring is formed is increased, and the stress causes disconnection, and the semiconductor device is likely to be defective.

An object of the present invention is to solve the above-mentioned problems and to provide a semiconductor device which is more compact and which can be highly integrated, and a method of manufacturing the same.

[0007]

In order to achieve the above object, a semiconductor device and a method of manufacturing the same according to the present invention employ the following configurations and manufacturing methods.

The semiconductor device of the present invention has circuit elements on both upper and lower surfaces of a silicon substrate, has through holes for conducting circuit elements on the upper surface and circuit elements on the lower surface, and has a conductive film inside the through holes. It is characterized by having.

A stacked semiconductor device according to the present invention has circuit elements on both upper and lower surfaces of a silicon substrate, and has through holes for electrically connecting the circuit elements on the upper surface and the circuit elements on the lower surface.
A plurality of semiconductor devices having a conductive film inside a through hole are provided, and one or more semiconductor devices are provided with a protruding electrode on a circuit element, and a protruding electrode of one semiconductor device and a circuit element of another semiconductor device are connected materials. It is characterized by being connected by.

Further, the semiconductor device is characterized in that a sealing resin is provided in a gap between the semiconductor devices.

A semiconductor package according to the present invention is a semiconductor package in which a semiconductor device having a protruding electrode is mounted on a wiring board. The wiring board is mainly formed of silicon, and the upper surface of the wiring board has a semiconductor device. A wiring for connecting to the protruding electrode and a wiring for connecting to an external connection terminal on a lower surface of the wiring board, and the wiring board has a through hole for conducting between the upper wiring and the lower wiring. And a protective film for protecting the wiring, connecting the protruding electrodes formed on the semiconductor device and the wiring of the wiring substrate with a connection material, and sealing the semiconductor device and the wiring substrate with a sealing resin. It is characterized by doing.

According to the method of manufacturing a semiconductor device of the present invention, there are provided a circuit element forming step of forming circuit elements on both upper and lower surfaces of a silicon substrate, and a boring process for forming through holes for connecting the circuit elements on the upper and lower surfaces. And a conductive film forming step of forming a conductive film inside the through hole provided in the drilling step.

A method for manufacturing a stacked semiconductor device according to the present invention comprises:
A plurality of semiconductor devices formed in the circuit element forming step, the drilling step, and the conductive film forming step, and a projecting electrode forming step of providing projecting electrodes on one or both circuit elements on the upper and lower surfaces of these semiconductor devices; A connecting step of connecting the protruding electrode and the circuit element with a connection material, and mounting a plurality of semiconductor devices; and a sealing step of installing a sealing resin between the semiconductor devices.

The method for manufacturing a semiconductor package according to the present invention comprises:
A patterning process for forming wiring on the upper and lower surfaces of a silicon substrate mainly made of silicon, a hole forming process for forming through holes for connecting the wiring on the upper and lower surfaces of the silicon substrate, A conductive film forming step of providing a conductive film, a protective film forming step of forming a protective film for protecting the wiring on the wiring, a bonding step of fixing the wiring and the protruding electrode of the semiconductor device with a connection material, a semiconductor device and silicon And a sealing step of installing a sealing resin between the substrates.

[0015]

DESCRIPTION OF THE PREFERRED EMBODIMENTS In the present invention, circuit elements and wirings are formed on both upper and lower surfaces of a silicon substrate, and are electrically connected through conductive films formed in through holes. In this way, the circuit elements and wirings formed on the upper and lower surfaces of the silicon substrate are electrically conducted through the conductive film formed in the through-hole, so that the circuit is twice as large as a conventional semiconductor device. An element can be formed, and high integration can be achieved. Further, by providing the semiconductor device with the protruding electrodes and laminating using the connection material, more circuit elements can be installed in the mounting area of the conventional semiconductor device.

Further, by forming a semiconductor package using a wiring substrate made of a silicon substrate, the semiconductor device and the wiring substrate have the same thermal expansion coefficient. Forming circuit elements, laminating semiconductor devices that are electrically conducting through conductive films formed inside the through holes,
By forming circuit elements on a silicon substrate constituting a wiring board, it becomes possible to install more circuit elements in a mounting area of a conventional semiconductor package.

[0017]

BRIEF DESCRIPTION OF THE DRAWINGS FIG.

FIG. 1 is a sectional view showing a semiconductor device according to a first embodiment of the present invention. As shown in FIG. 1, circuit elements 2 are formed on both upper and lower surfaces of a silicon substrate 1, conductive films 4 are provided in through holes 3 formed in the silicon substrate 1, and the circuit elements 2 are electrically connected to each other. It has a structure.

Next, a method of manufacturing the semiconductor device according to the first embodiment will be described. 1 to 4 are cross-sectional views showing the steps of manufacturing the semiconductor device according to the first embodiment.

As shown in FIG. 2, circuit elements 2 are formed on the upper and lower surfaces of a silicon substrate 1. At this time, in order to align the positions of the terminal portions to be conducted through the through holes 3 of the circuit element 2 formed on the upper and lower surfaces of the silicon substrate 1, the through holes 3 are provided in advance in a part of the silicon substrate 1 by a wet blast method. In advance, the circuit element 2 is formed using the through hole 3 as an alignment mark. Thereafter, through holes 3 are provided in terminal portions for conducting the upper and lower surfaces of the circuit element 2 formed on the silicon substrate 1 by wet blasting.

In the wet blast method, water or a liquid having the same viscosity as water containing 10 to 20% by weight of fine particles such as alumina or glass having a particle size of 50 μm or less is injected from an injection nozzle.
By injecting the silicon substrate 1 at an injection speed of 0 to 100 m / s, the fine particles cut the silicon substrate 1 as an abrasive and the through holes 3 are opened. The shape of the through hole 3 formed at this time depends on the shape of the injection nozzle.

Thereafter, as shown in FIG.
A conductive film 4 is formed on the circuit element 2 formed on the silicon substrate 1 and inside the through hole 3 by an electrolytic plating method, an electroless plating method, or the like. At this time, the circuit element 2 and the conductive film 4 formed inside the through hole 3 are electrically connected. As shown in FIG. 4, the conductive film 4 formed on the circuit element 2 and inside the through hole 3 is masked with a photosensitive resin 12 or the like at a portion not to be etched, and an unnecessary conductive film 4 is removed by etching. Then, the photosensitive resin 12 is removed. As the conductive film, a metal such as gold, silver, copper, nickel, or solder, a conductive polymer material, or the like can be used. Alternatively, the conductive film may be formed using the same material as the circuit element.

Through the above steps, a semiconductor device having circuit elements 2 on both surfaces of silicon substrate 1 and electrically conducting circuit elements 2 through conductive film 4 formed in through hole 3 is obtained. Can be. With this structure, it is possible to form the circuit element 2 about twice the size of the conventional semiconductor device, and it is possible to achieve high integration.

(Embodiment 2) FIG. 5 is a sectional view showing a stacked semiconductor device according to a second embodiment of the present invention. As shown in FIG. 5, a silicon substrate 1 has circuit elements 2 on both upper and lower surfaces, has through holes 3 for electrically connecting the circuit elements 2 to each other, has a conductive film 4 inside the through holes 3,
A semiconductor device having a protruding electrode 5 on one of the upper and lower surfaces is mounted with a connection material 6, and has a structure having a sealing resin 7 in a gap therebetween.

Next, a method of manufacturing a semiconductor device according to the second embodiment will be described. 5 and 6 are cross-sectional views illustrating the steps of manufacturing the semiconductor device according to the second embodiment.

As shown in FIG. 6, a protruding electrode 5 made of gold, copper, nickel or the like is formed on one of the upper and lower surfaces of a semiconductor device formed by the method described in the first embodiment.
Is formed by a plating method, a stud bump method, or the like. Semiconductor devices formed in the same manner are mechanically and electrically connected to each other using a connection material 6 such as a conductive adhesive or solder as shown in FIG. A liquid sealing resin 7 was poured and hardened in order to improve the environmental resistance.

Through the above steps, a semiconductor device having the circuit elements 2 on both sides of the silicon substrate 1 and electrically conducting the circuit elements 2 via the conductive film 4 formed inside the through holes 3 is laminated. As a result, more circuit elements 2 can be installed in the mounting area of the conventional semiconductor device.

(Embodiment 3) FIG. 7 is a sectional view showing a semiconductor package according to a third embodiment of the present invention. As shown in FIG. 7, a wiring 8 for connecting the semiconductor device is provided on the upper surface side, and a wiring 8 for conducting to the external connection terminal is provided on the lower surface side, and further, a through hole for connecting the wirings 8 to each other. 3, a wiring substrate made of silicon provided with a protective film 9 for protecting the wiring 8, a bump electrode 5 formed on the semiconductor device, a connection material 6 for connecting the wiring 8, and a semiconductor device. The structure has the sealing resin 7 between the wiring boards.

Next, a method of manufacturing a semiconductor package according to the third embodiment will be described. 7 to 13 are cross-sectional views illustrating the steps of manufacturing the semiconductor device according to the third embodiment.

As shown in FIG. 8, a metal film to be the wiring 8 is formed on both upper and lower surfaces of the silicon substrate 1 by a sputtering method or a vacuum evaporation method. A plurality of through holes 3 are provided in the silicon substrate 1 by a wet blast method. As shown in FIG. 9, a metal film is provided on the metal film serving as the wiring 8 formed on the silicon substrate 1 and inside the through hole 3 by an electrolytic plating method, an electroless plating method, or the like. The metal film formed in the through hole 3 and the metal film formed in the through hole 3 are electrically connected. The metal film to be the wiring 8 and the metal film formed inside the through hole can be formed of copper, gold, nickel, or the like. Further, the same material as the circuit element 2 on the semiconductor device used in the first and second embodiments may be used.

Next, as shown in FIG. 10, a photosensitive resin is provided on both upper and lower surfaces of the silicon substrate 1 and exposed and developed to form an etching resist 12. Then, FIG.
As described above, the exposed metal film without the etching resist 12 is removed by an etching solution. After this etching, the remaining etching resist 12 is removed. By this step, the wiring 8 for mounting the semiconductor device is provided on the upper surface side of the silicon substrate 1, and the wiring 8 for connecting to the external connection terminal is provided on the lower surface side. Further, FIG.
As described in (1), a protective film 9 made of a photosensitive resin for protecting the wiring 8 is formed on both surfaces of the silicon substrate 1 and subjected to exposure and development, so that a connection portion of the semiconductor device is connected to an external connection terminal. An opening is provided. Thereby, the wiring board is completed.

Next, as shown in FIG. 7, the wiring 8 on the upper surface of the wiring board formed by the above method and the protruding electrode 5 formed on the semiconductor device are connected to a connecting material 6 such as a conductive adhesive or solder. Electrical and mechanical connection. After that, the sealing resin 7 is poured into the gap between the semiconductor device and the wiring board and hardened, thereby protecting the semiconductor device. Thus, the semiconductor package of the present invention is completed.

The semiconductor device used at this time is a highly integrated semiconductor package by using the stacked semiconductor device formed by the method described in the second embodiment as shown in FIG. Was. Further, by forming the circuit element 2 on the silicon substrate 1 constituting the wiring substrate, further higher integration is possible.

By forming a semiconductor package using the wiring substrate made of the silicon substrate 1 by the above steps, the thermal expansion coefficients of the semiconductor device and the wiring substrate become the same, so that the semiconductor device is hardly affected by thermal stress. By using the semiconductor device described in No. 2 or forming the circuit element 2 on the silicon substrate 1 constituting the wiring board, more circuit elements could be installed in the mounting area of the conventional semiconductor package.

[0035]

As is apparent from the above description, the structure of a semiconductor device having circuit elements on both sides of a silicon substrate, and the circuit elements are electrically connected via a conductive film formed inside the through hole. By doing so, it is possible to form about twice as many circuit elements as the size of a conventional semiconductor device, and high integration can be achieved. Further, by providing the semiconductor device with the protruding electrodes and laminating using the connection material, more circuit elements can be installed in the mounting area of the conventional semiconductor device.

Further, by forming a semiconductor package using a wiring substrate made of a silicon substrate, the thermal expansion coefficient of the semiconductor device and that of the wiring substrate become the same. Use a semiconductor device in which a circuit element is formed and a semiconductor device electrically conductive through a conductive film formed inside the through hole is laminated with a connection material, or on a silicon substrate forming a wiring substrate Thus, more circuit elements can be installed in a conventional semiconductor package mounting area.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a cross-sectional view illustrating a method for manufacturing the semiconductor device according to the first embodiment of the present invention.

FIG. 3 is a sectional view illustrating the method for manufacturing the semiconductor device according to the first embodiment of the present invention.

FIG. 4 is a sectional view illustrating the method for manufacturing the semiconductor device according to the first embodiment of the present invention.

FIG. 5 is a sectional view showing a stacked semiconductor device according to a second embodiment of the present invention.

FIG. 6 is a sectional view illustrating a method for manufacturing a stacked semiconductor device according to a second embodiment of the present invention.

FIG. 7 is a sectional view showing a semiconductor package according to a third embodiment of the present invention.

FIG. 8 is a sectional view illustrating a method for manufacturing a semiconductor package according to a third embodiment of the present invention.

FIG. 9 is a sectional view illustrating a method of manufacturing a semiconductor package according to a third embodiment of the present invention.

FIG. 10 is a sectional view illustrating a method of manufacturing a semiconductor package according to a third embodiment of the present invention.

FIG. 11 is a sectional view illustrating a method for manufacturing a semiconductor package according to a third embodiment of the present invention.

FIG. 12 is a sectional view illustrating a method of manufacturing a semiconductor package according to a third embodiment of the present invention.

FIG. 13 is a cross-sectional view illustrating a semiconductor package according to an embodiment of the present invention.

FIG. 14 is a cross-sectional view showing a conventional semiconductor device.

FIG. 15 is a cross-sectional view showing a mounting structure of a conventional semiconductor device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Silicon substrate 2 Circuit element 3 Through hole 4 Conductive film 5 Projection electrode 6 Connection material 7 Sealing resin 8 Wiring 9 Protective film 11 Substrate 12 Etching resist

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification code FI Theme coat ゛ (Reference) H01L 27/00 301

Claims (9)

[Claims] 1. A semiconductor device comprising: a circuit element on both upper and lower surfaces of a silicon substrate; a through hole for conducting a circuit element on an upper surface and a circuit element on a lower surface; and a conductive film inside the through hole. Semiconductor device. 2. The semiconductor device according to claim 1, wherein one or more of the semiconductor devices include a protruding electrode on a circuit element, and the protruding electrode of one semiconductor device is connected to a circuit element of another semiconductor device. A stacked semiconductor device having a structure in which the stacked semiconductor devices are connected by a material. 3. The stacked semiconductor device according to claim 2, wherein a sealing resin is provided in a gap between the semiconductor devices. 4. A semiconductor package for mounting a semiconductor device having a protruding electrode on a wiring board, wherein the wiring board is mainly formed of silicon, and an upper surface of the wiring board is connected to a protruding electrode of the semiconductor device. Wiring, and wiring on the lower surface of the wiring substrate for connecting to external connection terminals, and the wiring substrate has a through hole for conducting the upper wiring and the lower wiring, and protects the wiring. And a protective film for connecting the protruding electrodes formed on the semiconductor device and the wiring of the wiring substrate with a connection material, and sealing the semiconductor device and the wiring substrate with a sealing resin. Semiconductor package. 5. The wiring substrate according to claim 4, wherein the wiring substrate according to claim 4 has the same function as the circuit element according to claim 1. Semiconductor package. 6. The wiring board according to claim 4, wherein:
A semiconductor package comprising the stacked semiconductor device according to claim 3. 7. A circuit element forming step for forming circuit elements on both upper and lower surfaces of a silicon substrate, a hole forming step for forming through holes for connecting the circuit elements on the upper and lower surfaces, and a hole forming step. A step of forming a conductive film inside the through hole provided. 8. A circuit element forming step according to claim 7,
A plurality of semiconductor devices formed in a hole forming step and a conductive film forming step, and a projecting electrode forming step of providing projecting electrodes on one or both circuit elements of upper and lower surfaces of these semiconductor devices; And a connecting step of connecting a plurality of semiconductor devices, and a sealing step of placing a sealing resin between the semiconductor devices, and a method of manufacturing the stacked semiconductor device. 9. A patterning process for forming wiring on both upper and lower surfaces of a silicon substrate mainly made of silicon, a hole forming process for forming through holes for connecting wires on upper and lower surfaces of the silicon substrate, A conductive film forming step of providing a conductive film inside the through hole, a protective film forming step of forming a protective film for protecting the wiring on the wiring, and a bonding step of fixing the wiring and the bump electrode of the semiconductor device with a connection material. And a sealing step of disposing a sealing resin between the semiconductor device and the silicon substrate.