JP2000315823A - Light emitting diode and manufacture thereof - Google Patents
Light emitting diode and manufacture thereofInfo
- Publication number
- JP2000315823A JP2000315823A JP11124229A JP12422999A JP2000315823A JP 2000315823 A JP2000315823 A JP 2000315823A JP 11124229 A JP11124229 A JP 11124229A JP 12422999 A JP12422999 A JP 12422999A JP 2000315823 A JP2000315823 A JP 2000315823A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting element
- resin
- light
- pin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Led Device Packages (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、発光ダイオード
およびその製造方法に関し、特に、発光した光の視認性
の高い発光ダイオードおよびその製造方法に関する。The present invention relates to a light emitting diode and a method for manufacturing the same, and more particularly, to a light emitting diode having high visibility of emitted light and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】近年、発光ダイオード（ｌｉｇｈｔ ｅ
ｍｉｔｔｉｎｇ ｄｉｏｄｅ、以下ＬＥＤと略称する）
は、その発光色が赤外や赤、黄色、緑色に加え、青色の
ものが実用化され、さらに高輝度発光の素子も実用化さ
れてきたため、小型で安価な発光素子として多用される
ようになってきた。2. Description of the Related Art In recent years, light emitting diodes (light e
(mitting diode, hereinafter abbreviated as LED)
In addition to infrared, red, yellow, and green colors, blue light-emitting elements have been put to practical use, and high-luminance light-emitting elements have also been put into practical use. It has become.
【０００３】図１２は、従来のＬＥＤの概略構成を示し
た図であり、同図（ａ）はその上面図であり、同図
（ｂ）はその断面図である。同図に示すように、ＬＥＤ
１０１は、発光素子１０２がリードピン１０４−２に形
成されたカップ１０５内に配され、ワイヤ１０６−１と
１０６−２によってそれぞれリードピン１０４−１と１
０４−２に接続され、リードピン１０４−１と１０４−
２を端子として発光素子１０２が回路の一部として構成
されるようになっている。また、これら各部は、砲弾型
で透明な樹脂１０７で保護されている。FIG. 12 is a diagram showing a schematic structure of a conventional LED, wherein FIG. 12A is a top view thereof, and FIG. 12B is a sectional view thereof. As shown in FIG.
Reference numeral 101 denotes a light emitting element 102 disposed in a cup 105 formed on a lead pin 104-2, and lead pins 104-1 and 104-1 respectively connected by wires 106-1 and 106-2.
04-2, and lead pins 104-1 and 104-
The light emitting element 102 is configured as a part of a circuit with 2 as a terminal. Each of these parts is protected by a bullet-shaped transparent resin 107.
【０００４】図１３は、図１２（ｂ）中の破線で囲んだ
ｂ部を拡大した図である。図１３（ａ）に示すように、
カップ１０５は、縁から発光素子を配する底部までの高
さを高くしたすり鉢状の形状をしており、その内部に発
光素子１０２が配されている。カップ１０５内は、樹脂
１０７とは別の（材質は同一のものでもよい）樹脂１０
８で満たされている。FIG. 13 is an enlarged view of a portion b surrounded by a broken line in FIG. As shown in FIG.
The cup 105 has a mortar-like shape in which the height from the edge to the bottom where the light emitting element is arranged is increased, and the light emitting element 102 is arranged inside the cup. In the cup 105, a resin 10 (the material may be the same) different from the resin 107 is used.
8 is filled.
【０００５】また、ＬＥＤには図１３（ｂ）に示すよう
にカップ１０５を満たす樹脂１０８に蛍光物質１０９が
混合されているものもある。これらの樹脂１０８は、カ
ップ１０５の上面の縁と略平行に充填されている。この
蛍光物質１０９は、例えば青色光が発光素子１０２から
発せられることにより励起し、青色光とは異なる波長の
光を発する。したがって、樹脂１０８に蛍光物質１０９
を混合することで白色発光するＬＥＤを形成することが
できる（特開平５−１５２６０９号公報、特開平７−９
９３４５号公報、特開平１０−６５２２１号公報参
照）。[0005] Further, as shown in FIG. 13B, there is a LED in which a fluorescent substance 109 is mixed in a resin 108 filling a cup 105. These resins 108 are filled substantially parallel to the edge of the upper surface of the cup 105. The fluorescent substance 109 is excited when, for example, blue light is emitted from the light emitting element 102, and emits light having a wavelength different from that of the blue light. Therefore, the fluorescent substance 109 is added to the resin 108.
Are mixed to form an LED that emits white light (JP-A-5-152609, JP-A-7-9).
9345, JP-A-10-65221).
【０００６】上述したように、発光素子１０２をすっぽ
りと覆うような上面の縁が高いカップ１０５内に発光素
子１０２を配して構成すると、発光素子１０２から発せ
られた光は、カップ１０５内の壁に反射し発光素子１０
２の平面部と略直角方向へ向かい、更に樹脂１０７の作
用で図１２（ｂ）中の矢印で示すように一方向に集約さ
れて出力される。As described above, when the light emitting element 102 is arranged in the cup 105 having a high top edge so as to completely cover the light emitting element 102, light emitted from the light emitting element 102 Light-emitting element 10 reflected on a wall
2B, and are collected in one direction by the action of the resin 107 and output as indicated by the arrow in FIG.
【０００７】[0007]
【発明が解決しようとする課題】上述のように、カップ
内の反射により一方向に集約された光を出力するＬＥＤ
は輝度も高く、また、蛍光物質を混合したものでは、カ
ップ内に発光素子と蛍光物質を構成しているため外部の
異なる波長の光による混色も起こらないといった利点が
ある。SUMMARY OF THE INVENTION As described above, an LED that outputs light concentrated in one direction by reflection in a cup
Has a high luminance, and a mixture of a fluorescent substance has an advantage that a light-emitting element and a fluorescent substance are formed in a cup so that color mixing by light of different wavelengths outside does not occur.
【０００８】しかし、一方向に集約されて出力される指
向性の強い光は、その構造上外部の異なる波長の光と混
色も起こらないが、当然の事ながら発光素子１０２から
の光は他の角度からは視認することができず、出力光と
９０度以上異なる角度からはその光を全く認識すること
ができない。そのため、ＬＥＤの用途が限られたものと
なってしまっていた。However, light having high directivity, which is collected and output in one direction, does not cause color mixing with light having a different wavelength outside from the structure thereof. The light cannot be recognized from an angle, and the light cannot be recognized at all from an angle different from the output light by 90 degrees or more. Therefore, the use of the LED has been limited.
【０００９】そこで、この発明は、視認性の良い光を出
力する発光ダイオードおよびその製造方法を提供するこ
とを目的とする。Accordingly, an object of the present invention is to provide a light emitting diode that outputs light with good visibility and a method for manufacturing the same.
【００１０】[0010]
【課題を解決するための手段】上述した目的を達成する
ため、請求項１の発明では、平坦部が形成された頭部を
有するピンと、前記ピンの頭部に載置された発光素子
と、前記発光素子を被覆し、その直径が前記ピンの頭部
と同等若しくは小さい半球状の第１の樹脂とを具備する
ことを特徴とする。In order to achieve the above object, according to the first aspect of the present invention, there is provided a pin having a head having a flat portion, a light emitting element mounted on the head of the pin, It is characterized in that the light emitting element is covered with a hemispherical first resin whose diameter is equal to or smaller than the head of the pin.
【００１１】また、請求項２の発明では、請求項１の発
明において、前記ピンの頭部は、中央に平坦部を有した
皿状をなしていることを特徴とする。なお、前記ピン頭
部を中央部に平坦部を有した浅い皿状をなすようにして
もよい。According to a second aspect of the present invention, in the first aspect of the present invention, the head of the pin has a dish shape having a flat portion in the center. The pin head may be formed in a shallow dish shape having a flat portion at the center.
【００１２】また、請求項３の発明では、請求項１の発
明において、前記ピンの頭部は、その縁部の円周上に堤
状の囲繞部を有することを特徴とする。なお、堤状の囲
繞部はわずかな高さであるように構成してもよい。According to a third aspect of the present invention, in the first aspect of the present invention, the head of the pin has a bank-shaped surrounding portion on a circumference of an edge thereof. Note that the bank-shaped surrounding portion may be configured to have a slight height.
【００１３】また、請求項４の発明では、請求項３の発
明において、前記囲繞部は、前記第１の樹脂とは別の第
２の樹脂から形成されることを特徴とする。According to a fourth aspect of the present invention, in the third aspect of the present invention, the surrounding portion is formed of a second resin different from the first resin.
【００１４】また、請求項５の発明では、請求項１の発
明において、前記第１の樹脂は、前記発光素子から発せ
られる光の波長を変換する波長変換物質が混合されてい
ることを特徴とする。According to a fifth aspect of the present invention, in the first aspect of the present invention, the first resin is mixed with a wavelength conversion substance for converting a wavelength of light emitted from the light emitting element. I do.
【００１５】また、請求項６の発明では、請求項５の発
明において、前記波長変換物質は、蛍光物質であること
を特徴とする。According to a sixth aspect of the present invention, in the fifth aspect of the invention, the wavelength conversion material is a fluorescent material.
【００１６】また、請求項７の発明では、基板と、前記
基板上に載置された発光素子と、前記発光素子を被覆
し、該発光素子の載置位置から突出した半球状の第１の
樹脂とを具備することを特徴とする。Further, in the invention according to claim 7, the substrate, the light emitting element mounted on the substrate, and the first hemispherical first covering the light emitting element and projecting from the mounting position of the light emitting element are provided. And a resin.
【００１７】また、請求項８の発明では、請求項７の発
明において、前記基板は、前記発光素子の載置位置の周
囲に溝を有することを特徴とする。According to an eighth aspect of the present invention, in the seventh aspect of the invention, the substrate has a groove around a mounting position of the light emitting element.
【００１８】また、請求項９の発明では、請求項７の発
明において、前記基板は、前記発光素子の載置位置の周
囲に堤状の囲繞部を有し、該囲繞部は、前記第１の樹脂
とは別の第２の樹脂から形成されることを特徴とする。
なお、堤状の囲繞部は発光素子の発する光を遮らない高
さであるものとする。According to a ninth aspect of the present invention, in the invention of the seventh aspect, the substrate has a bank-shaped surrounding portion around a mounting position of the light emitting element, and the surrounding portion is provided with the first It is characterized by being formed from a second resin different from the above resin.
Note that the bank-shaped surrounding portion has a height that does not block light emitted from the light emitting element.
【００１９】また、請求項１０の発明では、請求項７の
発明において、前記発光素子の載置位置は、前記基板上
の突出部であることを特徴とする。According to a tenth aspect of the present invention, in the seventh aspect of the invention, the mounting position of the light emitting element is a protrusion on the substrate.
【００２０】また、請求項１１の発明では、平坦部が形
成されたピン頭部の中心部に発光素子を載置し、該発光
素子に液状の熱硬化性樹脂を滴下し、該滴下した樹脂の
表面張力を利用して前記発光素子を被覆する直径が前記
ピン頭部と同等若しくは小さい半球体を形成し、その
後、前記半球体を加熱して硬化させることを特徴とす
る。In the eleventh aspect of the present invention, the light emitting element is mounted on the center of the pin head having the flat portion formed thereon, and a liquid thermosetting resin is dropped on the light emitting element. A hemisphere having a diameter equal to or smaller than that of the head of the pin is formed using the surface tension of the light-emitting element, and then the hemisphere is heated and cured.
【００２１】また、請求項１２の発明では、平坦部が形
成されたピン頭部の中心部に発光素子を載置し、該発光
素子に加熱することにより粘性が低下し、さらに加熱す
ることで硬化する樹脂を塗布し、該塗布した樹脂の表面
張力を利用して前記発光素子を被覆する直径が前記ピン
頭部と同等若しくは小さい半球体を形成し、その後、前
記半球体を加熱して硬化させることを特徴とする。According to the twelfth aspect of the present invention, the light emitting element is placed at the center of the pin head where the flat part is formed, and the viscosity is reduced by heating the light emitting element. A resin to be cured is applied, and a hemisphere whose diameter covering the light emitting element is equal to or smaller than that of the pin head is formed by using the surface tension of the applied resin, and then the hemisphere is cured by heating. It is characterized by making it.
【００２２】また、請求項１３の発明では、基板上に発
光素子を載置し、該発光素子に液状の熱硬化性樹脂を滴
下し、該滴下した樹脂の表面張力を利用して前記発光素
子を被覆する前記発光素子の載置位置から突出した半球
体を形成し、その後、前記半球体を加熱して硬化させる
ことを特徴とする。According to a thirteenth aspect of the present invention, a light-emitting element is mounted on a substrate, a liquid thermosetting resin is dropped on the light-emitting element, and the light-emitting element is formed by utilizing the surface tension of the dropped resin. A hemisphere protruding from the mounting position of the light emitting element covering the light emitting element is formed, and thereafter, the hemisphere is heated and cured.
【００２３】また、請求項１４の発明では、基板上に発
光素子を載置し、該発光素子に加熱することにより粘性
が低下し、さらに加熱することで硬化する樹脂を塗布
し、該塗布した樹脂の表面張力を利用して前記発光素子
を被覆する前記発光素子の載置位置から突出した半球体
を形成し、その後、前記半球体を加熱して硬化させるこ
とを特徴とする。Further, in the invention according to claim 14, a light emitting element is mounted on a substrate, and a resin whose viscosity is reduced by heating the light emitting element and which is cured by further heating is applied. A hemisphere protruding from a mounting position of the light emitting element that covers the light emitting element is formed using a surface tension of a resin, and thereafter, the hemisphere is heated and cured.
【００２４】[0024]
【発明の実施の形態】以下、この発明に係る発光ダイオ
ードおよびその製造方法の一実施例について、添付図面
を参照して詳細に説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an embodiment of a light emitting diode according to the present invention and a method for manufacturing the same will be described in detail with reference to the accompanying drawings.
【００２５】図１は、この発明に係る発光ダイオードの
概略構成を示した図であり、同図（ａ）はその上面図、
同図（ｂ）はその断面図である。また、図２は、図１
（ｂ）中に示した破線で囲んだ部分ａの拡大図である。FIG. 1 is a diagram showing a schematic structure of a light emitting diode according to the present invention, and FIG.
FIG. 2B is a cross-sectional view thereof. FIG. 2 is similar to FIG.
FIG. 3B is an enlarged view of a portion a surrounded by a broken line shown in FIG.
【００２６】発光ダイオード（以下、ＬＥＤと略称す
る）１は、発光素子２とセラミック等の絶縁体からなる
基板３、リードピン４−１および４−２、ピン５、ワイ
ヤ６−１および６−２、樹脂７、樹脂８から構成され
る。発光素子２は、ピン５上に配され樹脂８により固定
および保護されるとともに、ワイヤ６−１および６−２
によりリードピン４−１および４−２と電気的に接続さ
れる。発光素子２が載せられたピン５とリードピン４−
１、４−２は基板３に配置され、これら全体が樹脂７に
より保護されている。このような構成では、リードピン
４−１と４−２の間に所定の電圧を印加すると、発光素
子２に電流が流れ、発光素子２から光が発せられる。こ
の発光素子２が発する光は、従来のもののようにカップ
による光の遮断や反射がないため、図１（ｂ）中に示し
た矢印のように樹脂７の半球角全ての面（ただし、基板
３と接している面は除く）から出力される。A light emitting diode (hereinafter abbreviated as LED) 1 includes a light emitting element 2 and a substrate 3 made of an insulator such as ceramic, lead pins 4-1 and 4-2, pins 5, wires 6-1 and 6-2. , Resin 7 and resin 8. The light emitting element 2 is disposed on the pin 5 and fixed and protected by the resin 8, and has wires 6-1 and 6-2.
, And are electrically connected to the lead pins 4-1 and 4-2. The pin 5 on which the light emitting element 2 is mounted and the lead pin 4-
Reference numerals 1 and 4-2 are arranged on the substrate 3, and the whole thereof is protected by the resin 7. In such a configuration, when a predetermined voltage is applied between the lead pins 4-1 and 4-2, a current flows through the light emitting element 2 and light is emitted from the light emitting element 2. Since the light emitted from the light emitting element 2 does not block or reflect the light by the cup as in the conventional light emitting device, the surface of the resin 7 has all the hemispherical angles as shown by the arrow shown in FIG. 3 except for the surface in contact with 3).
【００２７】また、ＬＥＤ１を白色発光などの波長変換
を行った光を出力する素子として構成する場合には、図
２（ｂ）に示すように樹脂８内に蛍光物質９を混合す
る。樹脂８に混合する蛍光物質９は、例えば、（Ｙ，Ｇ
ｄ，Ｃｅ）３Ａｌ５Ｏ１２を使用し、発光素子２を覆う
ことができる程度の量若しくは樹脂８が硬化した際に目
的とした発光色が得られる程度の量を混合する。When the LED 1 is configured as an element that outputs wavelength-converted light such as white light emission, a fluorescent substance 9 is mixed in a resin 8 as shown in FIG. The fluorescent substance 9 mixed with the resin 8 is, for example, (Y, G
d, Ce) 3 Al 5 O 12 is used, and an amount sufficient to cover the light emitting element 2 or an amount sufficient to obtain a desired luminescent color when the resin 8 is cured is mixed.
【００２８】ここで、樹脂８について説明する。樹脂８
は、加熱することにより液状から固体へと硬化する特性
を有する熱硬化性樹脂、若しくは加熱することにより粘
性が低下し、その後さらに加熱することで硬化する特性
を有する樹脂である。Here, the resin 8 will be described. Resin 8
Is a thermosetting resin having a property of being cured from a liquid state to a solid state by heating, or a resin having a property of decreasing the viscosity by heating and then being cured by further heating.
【００２９】樹脂８が熱硬化性樹脂である場合には、図
３（ａ）に示すように、発光素子２をピン５上に載置
し、ノズル１００から液状の樹脂８を滴下する。ピン５
上に滴下された樹脂８は、液状であるためその表面張力
により図３（ｂ）に示すようにピン５上で半球状にな
る。この後、樹脂８に対して一定時間の加熱を行うと、
樹脂８は硬化して固体となる。When the resin 8 is a thermosetting resin, as shown in FIG. 3A, the light emitting element 2 is mounted on the pins 5 and the liquid resin 8 is dropped from the nozzle 100. Pin 5
Since the resin 8 dropped on the top is in a liquid state, it becomes hemispherical on the pin 5 as shown in FIG. Thereafter, when the resin 8 is heated for a certain time,
The resin 8 hardens and becomes solid.
【００３０】また、樹脂８が加熱することにより粘性が
低下し、その後さらに加熱することで硬化する特性を有
する樹脂である場合には、発光素子２をピン５上に載置
した後、発光素子２に樹脂８を塗布する。その後、樹脂
８に対して一定時間の加熱を行うと、樹脂８は、まず粘
性が低下し、その表面張力により図３（ｂ）に示すよう
にピン５上で半球状になる。この後、樹脂８は硬化して
固体となる。If the resin 8 is a resin having a property of decreasing its viscosity by heating and then being cured by further heating, the light emitting element 2 is placed on the pin 5 and then the light emitting element 2 is coated with a resin 8. Thereafter, when the resin 8 is heated for a certain period of time, the viscosity of the resin 8 first decreases, and the resin 8 becomes hemispheric on the pin 5 as shown in FIG. Thereafter, the resin 8 cures and becomes solid.
【００３１】ところで、樹脂８は、発光素子２の固定と
保護のためにピン５に塗布（滴下）しているため、その
量（大きさ）は発光素子２の固定と保護に必要な最小限
の量であることが望ましい。特に、樹脂８に蛍光物質９
を混合している場合には、最小限の樹脂８を塗布するこ
とで蛍光物質９の無駄を省き、安価で効率（波長変換の
効率）の良いＬＥＤ１を構成することができる。Since the resin 8 is applied (dropped) to the pins 5 for fixing and protecting the light emitting element 2, the amount (size) of the resin 8 is the minimum necessary for fixing and protecting the light emitting element 2. Is desirable. In particular, the fluorescent substance 9
Is mixed, the minimum amount of the resin 8 is applied, so that the waste of the fluorescent substance 9 can be omitted, and the LED 1 which is inexpensive and has high efficiency (wavelength conversion efficiency) can be formed.
【００３２】したがって、樹脂８の量を最小限に抑える
ためにピン５の形状を樹脂８の滴下に適した形状とする
ことが考えられる。Therefore, in order to minimize the amount of the resin 8, it is conceivable to make the shape of the pin 5 suitable for dropping the resin 8.
【００３３】図４乃至６は、樹脂の滴下に適したピン形
状の例を示した図である。図４に示すピン１５は、その
頭部を中央に平坦部を有し円周に向け僅かに傾斜させて
皿状にしたものである。このピン１５の中心に発光素子
１２を載置し、樹脂１８を滴下すると、ピン１５の傾斜
により表面張力の影響はより顕著となり、樹脂１８は発
光素子１２を中心として均一に塗布されることになる。FIGS. 4 to 6 show examples of pin shapes suitable for dropping resin. The pin 15 shown in FIG. 4 has a flat shape at the center of its head, and is slightly inclined toward the circumference to form a dish. When the light emitting element 12 is placed at the center of the pin 15 and the resin 18 is dropped, the influence of the surface tension becomes more remarkable due to the inclination of the pin 15, and the resin 18 is uniformly applied around the light emitting element 12. Become.
【００３４】図５に示すピン２５は、その頭部に予め滴
下する樹脂２８とは異なる樹脂２０（材質は樹脂２８と
同様でもよい）を周状に塗布したもので、このピン２５
に発光素子２２を載置して樹脂２８を滴下すると、樹脂
２８は樹脂２０に囲まれた部分以外には広がらない。The pin 25 shown in FIG. 5 is formed by applying a resin 20 (the material may be the same as that of the resin 28) different from the resin 28 which is dropped on the head in advance.
When the light-emitting element 22 is placed on the substrate and the resin 28 is dropped, the resin 28 does not spread to portions other than the portion surrounded by the resin 20.
【００３５】図６に示すピン３５は、その頭部を中央に
平坦部を有し、円周に堤状の囲繞３５ａを有する形状に
形成している。この場合も、囲繞３５ａで囲まれた平坦
部分に発光素子３２を載置して樹脂３８を滴下すること
で、樹脂３８の使用量を最小限に抑えることができる。The pin 35 shown in FIG. 6 has a head having a flat portion in the center and a bank-like surrounding 35a around the circumference. Also in this case, the amount of the resin 38 used can be minimized by placing the light emitting element 32 on the flat portion surrounded by the surrounding 35a and dropping the resin 38.
【００３６】なお、図４乃至６に示したいずれの例にお
いても、皿状の傾斜や囲繞などは発光素子１２、２２、
３２が発する横方向の光の光路に影響のない程度の高さ
である。In any of the examples shown in FIGS. 4 to 6, the dish-shaped inclination and surroundings are the same as those of the light emitting elements 12, 22,.
The height is such that it does not affect the optical path of the lateral light emitted by the light source 32.
【００３７】また、図４乃至６に示した各方法を利用す
ることで、ピン頭部の面積が樹脂を塗布したい面積より
も大きい場合にも所望の範囲に樹脂を塗布することがで
きる。Also, by using each of the methods shown in FIGS. 4 to 6, even when the area of the pin head is larger than the area where the resin is to be applied, the resin can be applied in a desired range.
【００３８】図７は、樹脂の塗布面積よりもピン頭部が
大きいＬＥＤの構成例を示した図であり、同図（ａ）は
その上面図、同図（ｂ）はその断面図である。FIGS. 7A and 7B show an example of the configuration of an LED having a pin head larger than the resin application area. FIG. 7A is a top view and FIG. 7B is a cross-sectional view. .
【００３９】同図に示すように、ＬＥＤ４１は、発光素
子４２に通電するためのリードピン４４−１および４４
−２が設けられ、それぞれ発光素子４２とワイヤ４６−
１および４６−２で電気的に接続されている。As shown in FIG. 3, the LED 41 includes lead pins 44-1 and 44 for supplying electricity to the light emitting element 42.
-2 are provided, and the light emitting element 42 and the wire 46-
1 and 46-2.
【００４０】また、発光素子４２は、リードピン４４−
２の頭部に載置され、樹脂４８が塗布されている。リー
ドピン４４−２の頭部の面積は、樹脂４８を塗布する面
積に比べて大きいものであるが、リードピン４４−２の
頭部には、発光素子４２を囲むように上述したような傾
斜した皿状の形成や別の樹脂の塗布による堤状の囲繞の
形成等のいずれかの処理を施しているため、樹脂４８は
所望の大きさで塗布されることになる。The light emitting element 42 includes a lead pin 44-
2 and the resin 48 is applied. The area of the head of the lead pin 44-2 is larger than the area to which the resin 48 is applied, but the head of the lead pin 44-2 has an inclined plate as described above so as to surround the light emitting element 42. The resin 48 is applied in a desired size because any processing such as formation of a shape or formation of a bank-like surrounding by application of another resin is performed.
【００４１】上述の説明では、発光素子をピン若しくは
リードピンに載置する場合を説明したが、発光素子は基
板等に直接載置することも可能である。この場合、発光
素子を載置する基板に所望の範囲に上述した別の樹脂の
塗布により堤状の囲繞部を形成して樹脂の塗布範囲を定
めることもでき、また、図８に示すような基板を使用す
ることで、図４乃至６を参照して説明した場合と同様に
樹脂の塗布範囲を限定させることができる。In the above description, the case where the light emitting element is mounted on the pins or the lead pins has been described. However, the light emitting element can be mounted directly on the substrate or the like. In this case, it is also possible to form a bank-like surrounding portion by applying the above-mentioned another resin to a desired area on the substrate on which the light emitting element is mounted, thereby defining the resin application range, as shown in FIG. By using the substrate, the application range of the resin can be limited as in the case described with reference to FIGS.
【００４２】図８は、発光素子を直接載置する基板の例
を示した図である。同図（ａ）に示す基板５３には、円
柱状の突起５３ａが形成されており、その突起５３ａの
中心に発光素子５２を載置して樹脂５８を塗布（滴下）
する。FIG. 8 is a diagram showing an example of a substrate on which a light emitting element is directly mounted. On the substrate 53 shown in FIG. 3A, a columnar projection 53a is formed. The light emitting element 52 is placed at the center of the projection 53a, and a resin 58 is applied (dropped).
I do.
【００４３】また、同図（ｂ）に示す基板６３には、円
周状の溝６３ａが形成されており、溝６３ａに囲まれた
領域の中心に発光素子６２を載置して樹脂６８を塗布
（滴下）する。Further, a circumferential groove 63a is formed in the substrate 63 shown in FIG. 4B, and the light emitting element 62 is placed at the center of the region surrounded by the groove 63a, and the resin 68 is coated. Apply (drop).
【００４４】発光素子を直接基板上に載置する場合に
は、複数の発光素子を近接して載置し、複数の発光素子
にまとめて樹脂を塗布することもできる。図９は、基板
上に複数の発光素子を載置したＬＥＤの構成例を示した
図であり、同図（ａ）はその上面を、同図（ｂ）はその
断面を示している。When the light-emitting elements are directly mounted on the substrate, a plurality of light-emitting elements can be mounted close to each other, and a resin can be applied to the plurality of light-emitting elements collectively. FIGS. 9A and 9B are diagrams showing a configuration example of an LED in which a plurality of light emitting elements are mounted on a substrate. FIG. 9A shows the upper surface, and FIG. 9B shows the cross section.
【００４５】同図に示すようにＬＥＤ７１は、突起を有
する基板７３上に複数の発光素子７２−１乃至７２−３
を載置し、この発光素子７２−１乃至７２−３とリード
ピン７４−１および７４−２をワイヤによって接続して
樹脂７８を塗布している。As shown in the figure, an LED 71 has a plurality of light emitting elements 72-1 to 72-3 on a substrate 73 having a projection.
Are mounted, and the light emitting elements 72-1 to 72-3 are connected to the lead pins 74-1 and 74-2 by wires, and a resin 78 is applied.
【００４６】なお、図９に示した例では、リードピン７
４−１、７４−２に対しても樹脂７８を塗布している
が、発光素子７２−１乃至７２−３に対してのみ樹脂７
８を塗布するようにすることもできることは上述した実
施例からも明らかである。Incidentally, in the example shown in FIG.
Although the resin 78 is applied to 4-1 and 74-2, the resin 7 is applied only to the light emitting elements 72-1 to 72-3.
It is clear from the above-mentioned embodiment that the coating 8 can be applied.
【００４７】ところで、この発明に係るＬＥＤは、従来
のＬＥＤと異なり半球角の広い範囲（方向）に光を出力
することができるが、この特性を利用して任意の反射体
と反射面積を構成して大きな指向性の光を出力すること
ができる。この応用例を図１０および１１に示す。By the way, the LED according to the present invention can output light in a wide range (direction) of a hemispherical angle unlike the conventional LED. However, by utilizing this characteristic, an arbitrary reflector and a reflection area can be formed. As a result, light with high directivity can be output. This application is shown in FIGS.
【００４８】図１０は、第１の応用例を示した図であ
り、同図（ａ）はその上面を示し、同図（ｂ）はその断
面を示している。同図に示すように、発光素子を載置し
たピン（樹脂により固定および保護されている）とリー
ドピンで構成されるユニット８１（８１−１乃至８１−
８）をリフレクタ８２とともにケース８０に収容し、樹
脂８３により全体を固定および保護するような構成をと
ると、ユニット８１の各発光素子から発せられる平面方
向への光は、リフレクタ８２で反射して一方向に出力さ
れる。この出力される光の大きさ（範囲）は、リフレク
タの面積によって決定するため、結果として任意の広い
大きさの光を出力することができる。FIGS. 10A and 10B show a first application example. FIG. 10A shows the upper surface, and FIG. 10B shows the cross section. As shown in the figure, a unit 81 (81-1 to 81-) composed of a pin on which a light emitting element is mounted (fixed and protected by resin) and a lead pin.
8) is housed in the case 80 together with the reflector 82, and a configuration is adopted in which the whole is fixed and protected by the resin 83. Light in the plane direction emitted from each light emitting element of the unit 81 is reflected by the reflector 82. Output in one direction. Since the size (range) of the output light is determined by the area of the reflector, light of an arbitrary wide size can be output as a result.
【００４９】図１１は、第２の応用例を示した図であ
り、同図（ａ）はその上面を示し、同図（ｂ）はその断
面を示している。同図に示すように、複数の発光素子９
２（９２−１乃至９２−３６）を所定の単位で直列に接
続し（図中では６個の直列接続）、リフレクタ９３とと
もにケース９０に収容し、樹脂９４により全体を固定お
よび保護するような構成をとると、各発光素子９２から
発せられる光は、リフレクタ９３で反射して一方向に出
力される。この図１１に示した構成も、図１０に示した
構成と同様にリフレクタの大きさにより面積の広い光の
大きさを任意に設定することができるほか、発光素子９
４の数を加減することで出力光の強度をも任意に設定す
ることができる。FIGS. 11A and 11B show a second application example. FIG. 11A shows the upper surface, and FIG. 11B shows the cross section. As shown in FIG.
2 (92-1 to 92-36) are connected in series in a predetermined unit (six series connection in the figure), housed in a case 90 together with a reflector 93, and fixed and protected as a whole by a resin 94. With this configuration, light emitted from each light emitting element 92 is reflected by the reflector 93 and output in one direction. In the configuration shown in FIG. 11, the size of light having a large area can be arbitrarily set according to the size of the reflector similarly to the configuration shown in FIG.
The intensity of the output light can be arbitrarily set by adjusting the number of four.
【００５０】[0050]
【発明の効果】以上説明したように、この発明によれ
ば、発光素子が発光する光を遮らない平面状のピンある
いは基盤上に発光素子を載置するとともに、その発光素
子を表面張力を利用した半球状の樹脂で固定および保護
するように構成したため、発光素子が発した光はその方
向を遮られることなく出力され、半球角の広範囲に照射
される光を得ることができる。As described above, according to the present invention, a light-emitting element is mounted on a flat pin or a base which does not block light emitted from the light-emitting element, and the light-emitting element uses surface tension. The light emitted from the light-emitting element is output without being interrupted in the direction, so that light that is irradiated over a wide range of hemispheric angles can be obtained.
【００５１】また、蛍光物質などの波長変換物質を混合
した樹脂を用いて任意の発光色を少ない混合樹脂で得ら
れるので、波長変換効率の向上とコストの低減を図るこ
とができる。Further, since an arbitrary luminescent color can be obtained with a small amount of mixed resin by using a resin mixed with a wavelength converting substance such as a fluorescent substance, it is possible to improve the wavelength conversion efficiency and reduce the cost.
【図１】この発明に係る発光ダイオードの概略構成を示
した図。FIG. 1 is a diagram showing a schematic configuration of a light emitting diode according to the present invention.
【図２】図１（ｂ）中に示した破線で囲んだ部分ａの拡
大図。FIG. 2 is an enlarged view of a portion a surrounded by a broken line shown in FIG.
【図３】樹脂の塗布方法を説明する図。FIG. 3 is a diagram illustrating a method of applying a resin.
【図４】樹脂の滴下に適したピン形状の例を示した図
（１）。FIG. 4 is a diagram (1) showing an example of a pin shape suitable for resin dripping.
【図５】樹脂の滴下に適したピン形状の例を示した図
（２）。FIG. 5 is a diagram (2) showing an example of a pin shape suitable for dropping resin.
【図６】樹脂の滴下に適したピン形状の例を示した図
（３）。FIG. 6 is a diagram (3) showing an example of a pin shape suitable for resin dripping.
【図７】樹脂の塗布面積よりもピン頭部が大きいＬＥＤ
の構成例を示した図。FIG. 7: LED having a pin head larger than the resin application area
The figure which showed the structural example of.
【図８】発光素子を直接載置する基板の例を示した図。FIG. 8 illustrates an example of a substrate on which a light emitting element is directly mounted.
【図９】基板上に複数の発光素子を載置したＬＥＤの構
成例を示した図。FIG. 9 is a diagram illustrating a configuration example of an LED in which a plurality of light emitting elements are mounted on a substrate.
【図１０】第１の応用例を示した図。FIG. 10 is a diagram showing a first application example.
【図１１】第２の応用例を示した図。FIG. 11 is a diagram showing a second applied example.
【図１２】従来のＬＥＤの概略構成を示した図。FIG. 12 is a diagram showing a schematic configuration of a conventional LED.
【図１３】図１２（ｂ）中の破線で囲んだｂ部を拡大し
た図。FIG. 13 is an enlarged view of a portion b surrounded by a broken line in FIG.
１ 発光ダイオード（ＬＥＤ） ２ 発光素子 ３ 基板 ４−１、４−２ リードピン ５ ピン ６−１、６−２ ワイヤ ７ 樹脂 ８ 樹脂 ９ 蛍光物質 １２ 発光素子 １５ ピン １８ 樹脂 ２０ 樹脂 ２２ 発光素子 ２５ ピン ２８ 樹脂 ３２ 発光素子 ３５ ピン ３５ａ 囲繞 ３８ 樹脂 ４１ 発光ダイオード（ＬＥＤ） ４２ 発光素子 ４４−１、４４−２ リードピン ４６−１、４６−２ ワイヤ ４８ 樹脂 ５２ 発光素子 ５３ 基板 ５３ａ 突起 ５８ 樹脂 ６２ 発光素子 ６３ 基板 ６３ａ 溝 ６８ 樹脂 ７１ 発光ダイオード（ＬＥＤ） ７２ 発光素子 ７３ 基板 ７４−１、７４−２ リードピン ７８ 樹脂 ８０ ケース ８１−１〜８１−８ ユニット ８２ リフレクタ ８３ 樹脂 ９０ ケース ９２−１〜９２−３６ 発光素子 ９３ リフレクタ ９４ 樹脂 １００ ノズル DESCRIPTION OF SYMBOLS 1 Light emitting diode (LED) 2 Light emitting element 3 Substrate 4-1 and 4-2 Lead pin 5 Pin 6-1 and 6-2 Wire 7 Resin 8 Resin 9 Fluorescent substance 12 Light emitting element 15 Pin 18 Resin 20 Resin 22 Light emitting element 25 pin 28 Resin 32 Light Emitting Element 35 Pin 35a Surrounding 38 Resin 41 Light Emitting Diode (LED) 42 Light Emitting Element 44-1, 44-2 Lead Pin 46-1, 46-2 Wire 48 Resin 52 Light Emitting Element 53 Substrate 53a Projection 58 Resin 62 Light Emitting Element 63 substrate 63a groove 68 resin 71 light emitting diode (LED) 72 light emitting element 73 substrate 74-1, 74-2 lead pin 78 resin 80 case 81-1 to 81-8 unit 82 reflector 83 resin 90 case 92-1 to 92-36 Light emitting element 93 Reflector 94 Resin 100 Nozzle
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 4M109 AA02 BA01 BA03 CA02 CA06 DA07 DB16 EA01 EB18 EC11 EE12 EE15 GA01 5F041 AA05 AA14 CA12 DA07 DA12 DA13 DA18 DA20 DA25 DA26 DA43 DB01 DB03 EE25 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4M109 AA02 BA01 BA03 CA02 CA06 DA07 DB16 EA01 EB18 EC11 EE12 EE15 GA01 5F041 AA05 AA14 CA12 DA07 DA12 DA13 DA18 DA20 DA25 DA26 DA43 DB01 DB03 EE25
Claims (14)
と、 前記ピンの頭部に載置された発光素子と、 前記発光素子を被覆し、その直径が前記ピンの頭部と同
等若しくは小さい半球状の第１の樹脂とを具備すること
を特徴とする発光ダイオード。1. A pin having a head with a flat portion formed thereon, a light emitting element mounted on the head of the pin, and covering the light emitting element and having a diameter equal to or smaller than the diameter of the head of the pin. A light-emitting diode comprising: a hemispherical first resin.
る請求項１記載の発光ダイオード。2. The light emitting diode according to claim 1, wherein the head of the pin has a dish shape having a flat portion in the center.
する請求項１記載の発光ダイオード。3. The light emitting diode according to claim 1, wherein the head of the pin has a bank-shaped surrounding portion on a circumference of an edge thereof.
を特徴とする請求項３記載の発光ダイオード。4. The light emitting diode according to claim 3, wherein the surrounding portion is formed of a second resin different from the first resin.
換物質が混合されていることを特徴とする請求項１記載
の発光ダイオード。5. The light emitting diode according to claim 1, wherein the first resin is mixed with a wavelength conversion substance for converting a wavelength of light emitted from the light emitting element.
イオード。6. The light emitting diode according to claim 5, wherein the wavelength conversion material is a fluorescent material.
した半球状の第１の樹脂とを具備することを特徴とする
発光ダイオード。7. A light emitting device comprising: a substrate; a light emitting element mounted on the substrate; and a hemispherical first resin that covers the light emitting element and protrudes from a mounting position of the light emitting element. Characteristic light emitting diode.
とする請求項７記載の発光ダイオード。8. The light emitting diode according to claim 7, wherein the substrate has a groove around a position where the light emitting element is mounted.
成されることを特徴とする請求項７記載の発光ダイオー
ド。9. The substrate has a bank-shaped surrounding portion around the mounting position of the light emitting element, and the surrounding portion is formed of a second resin different from the first resin. The light-emitting diode according to claim 7, wherein:
載の発光ダイオード。10. The light emitting diode according to claim 7, wherein the mounting position of the light emitting element is a protrusion on the substrate.
に発光素子を載置し、 該発光素子に液状の熱硬化性樹脂を滴下し、 該滴下した樹脂の表面張力を利用して前記発光素子を被
覆する直径が前記ピン頭部と同等若しくは小さい半球体
を形成し、 その後、前記半球体を加熱して硬化させることを特徴と
する発光ダイオードの製造方法。11. A light emitting element is mounted on a central portion of a pin head having a flat portion, a liquid thermosetting resin is dropped on the light emitting element, and a surface tension of the dropped resin is used. A method of manufacturing a light-emitting diode, comprising: forming a hemisphere having a diameter equal to or smaller than the pin head covering the light-emitting element, and thereafter heating and curing the hemisphere.
に発光素子を載置し、 該発光素子に加熱することにより粘性が低下し、さらに
加熱することで硬化する樹脂を塗布し、 該塗布した樹脂の表面張力を利用して前記発光素子を被
覆する直径が前記ピン頭部と同等若しくは小さい半球体
を形成し、 その後、前記半球体を加熱して硬化させることを特徴と
する発光ダイオードの製造方法。12. A light emitting element is placed at the center of the pin head where the flat part is formed, and a resin that is heated to reduce the viscosity and is further cured by heating is applied to the light emitting element. Utilizing the surface tension of the applied resin to form a hemisphere whose diameter covering the light-emitting element is equal to or smaller than that of the pin head, and thereafter heating and curing the hemisphere. Diode manufacturing method.
覆する前記発光素子の載置位置から突出した半球体を形
成し、 その後、前記半球体を加熱して硬化させることを特徴と
する発光ダイオードの製造方法。13. A light-emitting element is mounted on a substrate, a liquid thermosetting resin is dropped on the light-emitting element, and the light-emitting element is coated on the light-emitting element by utilizing the surface tension of the dropped resin. A method for manufacturing a light emitting diode, comprising: forming a hemisphere projecting from a mounting position; and thereafter, heating and curing the hemisphere.
加熱することで硬化する樹脂を塗布し、 該塗布した樹脂の表面張力を利用して前記発光素子を被
覆する前記発光素子の載置位置から突出した半球体を形
成し、 その後、前記半球体を加熱して硬化させることを特徴と
する発光ダイオードの製造方法。14. A light emitting element is mounted on a substrate, a resin whose viscosity is reduced by heating the light emitting element, and which is cured by further heating is applied, and a surface tension of the applied resin is used. Forming a hemisphere projecting from a mounting position of the light emitting element covering the light emitting element, and thereafter heating and curing the hemisphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11124229A JP2000315823A (en) | 1999-04-30 | 1999-04-30 | Light emitting diode and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11124229A JP2000315823A (en) | 1999-04-30 | 1999-04-30 | Light emitting diode and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000315823A true JP2000315823A (en) | 2000-11-14 |
Family
ID=14880190
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11124229A Pending JP2000315823A (en) | 1999-04-30 | 1999-04-30 | Light emitting diode and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000315823A (en) |
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