JP2000315824A - Light emitting diode and manufacture thereof - Google Patents

Light emitting diode and manufacture thereof

Info

Publication number
JP2000315824A
JP2000315824A JP11124230A JP12423099A JP2000315824A JP 2000315824 A JP2000315824 A JP 2000315824A JP 11124230 A JP11124230 A JP 11124230A JP 12423099 A JP12423099 A JP 12423099A JP 2000315824 A JP2000315824 A JP 2000315824A
Authority
JP
Japan
Prior art keywords
light emitting
resin
emitting element
light
emitting diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11124230A
Other languages
Japanese (ja)
Inventor
Hiroaki Matsubara
弘明 松原
Kenichi Nagamine
謙一 永峯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RUNARAITO KK
Original Assignee
RUNARAITO KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RUNARAITO KK filed Critical RUNARAITO KK
Priority to JP11124230A priority Critical patent/JP2000315824A/en
Publication of JP2000315824A publication Critical patent/JP2000315824A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Led Device Packages (AREA)

Abstract

PROBLEM TO BE SOLVED: To obtain a light emitting diode emitting light with high visibility and high wavelength conversion efficiency by providing a light emitting element mounted in the center on the head part of a pin, and a resin being mixed selectively with a material for converting the wavelength of emitted light provided in the vicinity of the light emitting element. SOLUTION: The light emitting diode (LED) comprises a light emitting element 2 mounted on a planar pin 5 or a substrate 3 while being secured and protected with a resin 8 mixed with a fluorescent material 9. With such an arrangement, light emitted from the light emitting element 2 can be subjected to efficient wavelength conversion and outputted as a light irradiating over a wide range visually confirmable from a hemispherical plane of about 180 deg..

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】この発明は、発光ダイオード
およびその製造方法に関し、特に、発光した光の視認性
の高い発光ダイオードおよびその製造方法に関する。
The present invention relates to a light emitting diode and a method for manufacturing the same, and more particularly, to a light emitting diode having high visibility of emitted light and a method for manufacturing the same.

【0002】[0002]

【従来の技術】近年、発光ダイオード(light e
mitting diode、以下LEDと略称する)
は、その発光色が赤外や赤、黄色、緑色に加え、青色の
ものが実用化され、さらに高輝度発光の素子も実用化さ
れてきたため、小型で安価な発光素子として多用される
ようになってきた。
2. Description of the Related Art In recent years, light emitting diodes (light e
(mitting diode, hereinafter abbreviated as LED)
In addition to infrared, red, yellow, and green colors, blue light-emitting elements have been put to practical use, and high-luminance light-emitting elements have also been put into practical use. It has become.

【0003】図13は、従来のLEDの概略構成を示し
た図であり、同図(a)はその上面図であり、同図
(b)はその断面図である。同図に示すように、LED
101は、発光素子102がリードピン104−2に形
成されたカップ105内に配され、ワイヤ106−1と
106−2によってそれぞれリードピン104−1と1
04−2に接続され、リードピン104−1と104−
2を端子として発光素子102が回路の一部として構成
されるようになっている。また、これら各部は、砲弾型
で透明な樹脂107で保護されている。
FIG. 13 is a diagram showing a schematic configuration of a conventional LED, wherein FIG. 13A is a top view thereof, and FIG. 13B is a sectional view thereof. As shown in FIG.
Reference numeral 101 denotes a light emitting element 102 disposed in a cup 105 formed on a lead pin 104-2, and lead pins 104-1 and 104-1 respectively connected by wires 106-1 and 106-2.
04-2, and lead pins 104-1 and 104-
The light emitting element 102 is configured as a part of a circuit with 2 as a terminal. Each of these parts is protected by a bullet-shaped transparent resin 107.

【0004】図14は、図13(b)中の破線で囲んだ
b部を拡大した図である。図14(a)に示すように、
カップ105は、縁から発光素子を配する底部までの高
さを高くしたすり鉢状の形状をしており、その内部に発
光素子102が配されている。カップ105内は、樹脂
107とは別の(材質は同一のものでもよい)樹脂10
8で満たされている。
FIG. 14 is an enlarged view of a portion b surrounded by a broken line in FIG. As shown in FIG.
The cup 105 has a mortar-like shape in which the height from the edge to the bottom where the light emitting element is arranged is increased, and the light emitting element 102 is arranged inside the cup. In the cup 105, a resin 10 (the material may be the same) different from the resin 107 is used.
8 is filled.

【0005】また、LEDには図14(b)に示すよう
にカップ105を満たす樹脂108に蛍光物質109が
混合されているものもあり、これらの樹脂108はカッ
プ105の上面の縁と略平行に充填されている。この蛍
光物質109は、例えば青色光が発光素子102から発
せられることにより励起し、青色光とは異なる波長の光
を発する。したがって、樹脂108に蛍光物質109を
混合することで白色発光するLEDを形成することがで
きる(特開平5−152609号公報、特開平7−99
345号公報、特開平10−65221号公報参照)。
As shown in FIG. 14B, some LEDs have a resin 108 filling a cup 105 mixed with a fluorescent substance 109, and these resins 108 are substantially parallel to an edge of the upper surface of the cup 105. Is filled. The fluorescent substance 109 is excited when, for example, blue light is emitted from the light emitting element 102, and emits light having a wavelength different from that of the blue light. Therefore, an LED that emits white light can be formed by mixing the fluorescent substance 109 with the resin 108 (JP-A-5-152609, JP-A-7-99).
345, JP-A-10-65221).

【0006】上述したように、発光素子102をすっぽ
りと覆うような上面の縁が高いカップ105内に発光素
子102を配して構成すると、発光素子102から発せ
られた光は、カップ105内の壁に反射し発光素子10
2の平面部と略直角方向へ向かい、更に樹脂107の作
用で図13(b)中の矢印で示すように一方向に集約さ
れて出力される。
As described above, when the light emitting element 102 is arranged in the cup 105 having a high top edge so as to completely cover the light emitting element 102, light emitted from the light emitting element 102 Light-emitting element 10 reflected on a wall
13B, and are collected and output in one direction by the action of the resin 107 as indicated by the arrow in FIG.

【0007】[0007]

【発明が解決しようとする課題】上述のように、カップ
内の反射により一方向に集約された光を出力するLED
は輝度も高く、また、蛍光物質を混合したものでは、カ
ップ内に発光素子と蛍光物質を構成しているため外部の
異なる波長の光による混色も起こらないといった利点が
ある。
SUMMARY OF THE INVENTION As described above, an LED that outputs light concentrated in one direction by reflection in a cup
Has a high luminance, and a mixture of a fluorescent substance has an advantage that a light-emitting element and a fluorescent substance are formed in a cup so that color mixing by light of different wavelengths outside does not occur.

【0008】しかし、一方向に集約されて出力される指
向性の強い光は、その構造上外部の異なる波長の光と混
色も起こらないが、当然の事ながら発光素子102から
の光は他の角度からは視認することができず、出力光と
90度以上異なる角度からはその光を全く認識すること
ができない。そのため、LEDの用途が限られたものと
なってしまっていた。
However, light having high directivity, which is collected and output in one direction, does not cause color mixing with light having a different wavelength outside from the structure thereof. The light cannot be recognized from an angle, and the light cannot be recognized at all from an angle different from the output light by 90 degrees or more. Therefore, the use of the LED has been limited.

【0009】また、樹脂に蛍光物質を混合した場合、波
長変換に必要な蛍光物質は、発光素子を覆う程度の量で
よく、過量の蛍光物質の混合は波長変換の効率を低下さ
せてしまう原因ともなる。
When a fluorescent substance is mixed with a resin, the amount of the fluorescent substance necessary for wavelength conversion may be sufficient to cover the light emitting element, and the mixing of an excessive amount of the fluorescent substance lowers the efficiency of the wavelength conversion. Also.

【0010】そこで、この発明は、視認性の良い光を出
力するとともに波長変換効率のよい発光ダイオードおよ
びその製造方法を提供することを目的とする。
SUMMARY OF THE INVENTION It is an object of the present invention to provide a light emitting diode which outputs light with good visibility and has high wavelength conversion efficiency, and a method for manufacturing the same.

【0011】[0011]

【課題を解決するための手段】上述した目的を達成する
ため、請求項1の発明では、平坦部を形成した頭部を有
するピンと、前記ピンの頭部の中央部に載置された発光
素子と、前記発光素子を被覆し、該発光素子から発せら
れる光の波長を変換する波長変換物質を少なくとも前記
発光素子と近接する部分に選択的に混合する第1の樹脂
とを具備することを特徴とする。
According to a first aspect of the present invention, there is provided a pin having a flat portion and a light emitting element mounted at the center of the pin. And a first resin that covers the light emitting element and selectively mixes at least a portion close to the light emitting element with a wavelength conversion substance that converts the wavelength of light emitted from the light emitting element. And

【0012】また、請求項2の発明では、請求項1の発
明において、前記波長変換物質は、蛍光物質であること
を特徴とする。
According to a second aspect of the present invention, in the first aspect of the present invention, the wavelength conversion substance is a fluorescent substance.

【0013】また、請求項3の発明では、請求項1の発
明において、前記第1の樹脂は、直径が前記ピンの頭部
と同等若しくは小さい半球状であることを特徴とする。
According to a third aspect of the present invention, in the first aspect of the present invention, the first resin has a hemispherical shape having a diameter equal to or smaller than the head of the pin.

【0014】また、請求項4の発明では、請求項1の発
明において、前記ピンの頭部は、中央に平坦部を有する
皿状をなしていることを特徴とする。なお、前記ピン頭
部は、中央に平坦部を有する浅い皿状をなすように構成
してよい。
According to a fourth aspect of the present invention, in the first aspect of the present invention, the head of the pin has a dish shape having a flat portion at the center. Note that the pin head may be configured to have a shallow dish shape having a flat portion at the center.

【0015】また、請求項5の発明では、請求項1の発
明において、前記ピンの頭部は、その縁部の円周上に堤
状の囲繞部を有することを特徴とする。
According to a fifth aspect of the present invention, in the first aspect of the present invention, the head of the pin has a bank-shaped surrounding portion on a circumference of an edge thereof.

【0016】また、請求項6の発明では、請求項5の発
明において、前記囲繞部は、前記第1の樹脂とは別の第
2の樹脂から形成されることを特徴とする。
According to a sixth aspect of the present invention, in the fifth aspect of the invention, the surrounding portion is formed of a second resin different from the first resin.

【0017】また、請求項7の発明では、基板と、前記
基板上に載置された発光素子と、前記発光素子を被覆
し、該発光素子から発せられる光の波長を変換する波長
変換物質を少なくとも前記発光素子と近接する部分に選
択的に混合する第1の樹脂とを具備することを特徴とす
る。
Further, in the invention according to claim 7, the substrate, the light emitting element mounted on the substrate, and a wavelength conversion material which covers the light emitting element and converts a wavelength of light emitted from the light emitting element are provided. A first resin which is selectively mixed at least in a portion adjacent to the light emitting element.

【0018】また、請求項8の発明では、請求項7の発
明において、前記波長変換物質は、蛍光物質であること
を特徴とする。
According to an eighth aspect of the present invention, in the seventh aspect of the present invention, the wavelength conversion substance is a fluorescent substance.

【0019】また、請求項9の発明では、請求項7の発
明において、前記第1の樹脂は、前記発光素子の載置位
置から突出した半球状であることを特徴とする。
According to a ninth aspect of the present invention, in the seventh aspect of the present invention, the first resin has a hemispherical shape protruding from a mounting position of the light emitting element.

【0020】また、請求項10の発明では、請求項7の
発明において、前記基板は、前記発光素子の載置位置の
周囲に溝を有することを特徴とする。
According to a tenth aspect of the present invention, in the seventh aspect of the present invention, the substrate has a groove around a mounting position of the light emitting element.

【0021】また、請求項11の発明では、請求項7の
発明において、前記発光素子の載置位置は、前記基板上
の突出部であることを特徴とする。
According to an eleventh aspect of the present invention, in the seventh aspect of the present invention, the mounting position of the light emitting element is a protrusion on the substrate.

【0022】また、請求項12の発明では、平坦部が形
成されたピン頭部若しくは基板上に発光素子を載置する
工程と、前記発光素子に該発光素子から発せられる光の
波長を変換する波長変換物質が混合された液状の熱硬化
性樹脂を滴下する工程と、前記波長変換物質を前記熱硬
化性樹脂内で前記発光素子の近傍に移動させる工程と、
前記半球体を加熱して硬化させる工程とを少なくとも具
備することを特徴とする。
In the twelfth aspect of the present invention, the step of mounting the light emitting element on the pin head or the substrate on which the flat portion is formed, and converting the wavelength of the light emitted from the light emitting element to the light emitting element. A step of dropping a liquid thermosetting resin in which the wavelength conversion substance is mixed, and a step of moving the wavelength conversion substance to the vicinity of the light emitting element within the thermosetting resin,
Heating and curing the hemisphere.

【0023】また、請求項13の発明では、請求項12
の発明において、前記波長変換物質を前記熱硬化性樹脂
内で前記発光素子の近傍に移動させる工程は、前記波長
変換物質を前記熱硬化性樹脂内で沈殿させることで行う
ことを特徴とする。
[0023] According to the invention of claim 13, according to claim 12,
In the invention, the step of moving the wavelength conversion substance to the vicinity of the light emitting element in the thermosetting resin is performed by precipitating the wavelength conversion substance in the thermosetting resin.

【0024】また、請求項14の発明では、請求項12
または13の発明において、前記波長変換物質は、蛍光
物質であることを特徴とする。
[0024] According to the fourteenth aspect of the present invention, the twelfth aspect is provided.
Alternatively, in the invention according to the thirteenth aspect, the wavelength conversion substance is a fluorescent substance.

【0025】また、請求項15の発明では、請求項12
の発明において、前記波長変換物質を前記熱硬化性樹脂
内で前記発光素子の近傍に移動させる工程は、前記波長
変換物質を前記熱硬化性樹脂内で前記発光素子の近傍に
移動させるとともに前記熱硬化性樹脂をその表面張力を
利用して半球体に成形することを特徴とする。
According to the fifteenth aspect, in the twelfth aspect,
In the invention, the step of moving the wavelength conversion substance to the vicinity of the light emitting element in the thermosetting resin includes moving the wavelength conversion substance to the vicinity of the light emitting element in the thermosetting resin and the heat It is characterized in that the curable resin is formed into a hemisphere by utilizing its surface tension.

【0026】また、請求項16の発明では、平坦部が形
成されたピン頭部若しくは基板上に発光素子を載置する
工程と、前記発光素子に該発光素子から発せられる光の
波長を変換する波長変換物質が混合され、加熱すること
により粘性が低下し、さらに加熱することで硬化する樹
脂を塗布する工程と、前記樹脂を加熱して粘性を低下さ
せ、該粘性が低下した樹脂内で前記波長変換物質を前記
発光素子の近傍に移動させる工程と、その後、前記樹脂
をさらに加熱して硬化させる工程とを少なくとも具備す
ることを特徴とする。
In the invention according to claim 16, a step of mounting a light emitting element on a pin head or a substrate on which a flat portion is formed, and converting the wavelength of light emitted from the light emitting element to the light emitting element. The wavelength conversion substance is mixed, the viscosity is reduced by heating, a step of applying a resin that is cured by heating, and heating the resin to reduce the viscosity, the resin in the reduced viscosity resin The method is characterized by comprising at least a step of moving the wavelength conversion substance to the vicinity of the light emitting element and a step of further heating and curing the resin.

【0027】また、請求項17の発明では、請求項16
の発明において、前記樹脂を加熱して粘性を低下させ、
該粘性が低下した樹脂内で前記波長変換物質を前記発光
素子の近傍に移動させる工程は、前記波長変換物質を前
記樹脂内で沈殿させることで行うことを特徴とする。
[0027] According to the invention of claim 17, there is provided claim 16.
In the invention of the above, the viscosity is reduced by heating the resin,
The step of moving the wavelength converting substance to the vicinity of the light emitting element in the resin having reduced viscosity is performed by causing the wavelength converting substance to precipitate in the resin.

【0028】また、請求項18の発明では、請求項16
または17の発明において、前記波長変換物質は、蛍光
物質であることを特徴とする。
According to the eighteenth aspect of the present invention,
Alternatively, in the invention according to the seventeenth aspect, the wavelength conversion substance is a fluorescent substance.

【0029】また、請求項19の発明では、請求項16
の発明において、前記樹脂を加熱して粘性を低下させ、
該粘性が低下した樹脂内で前記波長変換物質を前記発光
素子の近傍に移動させる工程は、前記樹脂を加熱して粘
性を低下させ、該粘性が低下した樹脂内で前記波長変換
物質を前記発光素子の近傍に移動させるとともに、該粘
性が低下した樹脂をその表面張力を利用して半球体に成
形することを特徴とする。
According to the nineteenth aspect, the sixteenth aspect provides
In the invention of the above, the viscosity is reduced by heating the resin,
The step of moving the wavelength converting substance to the vicinity of the light emitting element in the resin having reduced viscosity reduces the viscosity by heating the resin, and the light emitting the wavelength converting substance in the resin having reduced viscosity. The method is characterized in that the resin whose viscosity has been reduced is formed into a hemisphere by utilizing its surface tension while being moved to the vicinity of the element.

【0030】[0030]

【発明の実施の形態】以下、この発明に係る発光ダイオ
ードおよびその製造方法の一実施例について、添付図面
を参照して詳細に説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an embodiment of a light emitting diode according to the present invention and a method for manufacturing the same will be described in detail with reference to the accompanying drawings.

【0031】図1は、この発明に係る発光ダイオードの
概略構成を示した図であり、同図(a)はその上面を、
同図(b)はその断面を示している。また、図2は、図
1(b)中に示した破線で囲んだ部分aの拡大図であ
る。
FIG. 1 is a diagram showing a schematic configuration of a light emitting diode according to the present invention, and FIG.
FIG. 2B shows the cross section. FIG. 2 is an enlarged view of a portion a surrounded by a broken line shown in FIG.

【0032】発光ダイオード(以下、LEDと略称す
る)1は、発光素子2とセラミックなどの絶縁体からな
る基板3、リードピン4−1および4−2、ピン5、ワ
イヤ6−1および6−2、樹脂7、樹脂8、蛍光物質9
から構成される。発光素子2は、ピン5上に配され樹脂
8により固定および保護されるとともに、ワイヤ6−1
および6−2によりリードピン4−1および4−2と電
気的に接続される。発光素子2が載せられたピン5とリ
ードピン4−1、4−2は基板3に配置され、これら全
体が樹脂7により保護されている。このような構成で
は、リードピン4−1と4−2の間に所定の電圧を印加
すると、発光素子2に電流が流れ、発光素子2から光が
発せられる。この発光素子2が発する光は、蛍光物質9
で波長変換され、蛍光物質9からは別の波長の光が発せ
られて、例えば、白色光として出力される。この発光素
子2が発する光は、従来のもののようにカップによる光
の遮断や反射がないため、図1(b)中に示した矢印の
ように樹脂7の半球角全ての面(ただし、基板3と接し
ている面は除く)から出力される。なお、蛍光物質9
は、例えば、(Y,Gd,Ce)Al12を使用
する。
A light emitting diode (hereinafter abbreviated as LED) 1 includes a light emitting element 2 and a substrate 3 made of an insulator such as ceramic, lead pins 4-1 and 4-2, pins 5, wires 6-1 and 6-2. , Resin 7, resin 8, fluorescent substance 9
Consists of The light emitting element 2 is disposed on the pin 5 and fixed and protected by the resin 8, and the wire 6-1.
And 6-2 are electrically connected to lead pins 4-1 and 4-2. The pin 5 on which the light emitting element 2 is mounted and the lead pins 4-1 and 4-2 are arranged on the substrate 3 and are entirely protected by the resin 7. In such a configuration, when a predetermined voltage is applied between the lead pins 4-1 and 4-2, a current flows through the light emitting element 2 and light is emitted from the light emitting element 2. The light emitted from the light emitting element 2 is
, And light of another wavelength is emitted from the fluorescent substance 9 and output as, for example, white light. Since the light emitted from the light emitting element 2 does not block or reflect the light by the cup as in the conventional light emitting device, the surface of the resin 7 has all the hemispherical angles as shown by the arrow shown in FIG. 3 except for the surface in contact with 3). The fluorescent substance 9
Uses, for example, (Y, Gd, Ce) 3 Al 5 O 12 .

【0033】ここで、樹脂8および蛍光物質9について
説明する。樹脂8は、加熱することにより液状から固体
へと硬化する特性を有する熱硬化性樹脂、若しくは加熱
することにより粘性が低下し、その後さらに加熱するこ
とで硬化する特性を有する熱硬化性樹脂である。
Here, the resin 8 and the fluorescent substance 9 will be described. The resin 8 is a thermosetting resin having a property of being cured from a liquid state to a solid by heating, or a thermosetting resin having a property of being reduced in viscosity by heating and then being cured by further heating. .

【0034】樹脂8が加熱することにより粘性が低下す
る熱硬化性樹脂である場合には、その特性は、図3に示
したように一定の温度で加熱すると、時間の経過ととも
にまず粘度が低下し、その後、徐々に硬化を始め、時間
A(例えば、20時間位)の経過で、ほぼ完全に硬化す
る。この樹脂8を図4(a)に示すように発光素子2に
塗布して加熱すると、樹脂8は図4(b)に示すように
粘性が低下し、その表面張力により図4(c)に示すよ
うにピン5上で半球状になる。この後、樹脂8は硬化し
て固体となる。
In the case where the resin 8 is a thermosetting resin whose viscosity is reduced by heating, its characteristic is that if the resin 8 is heated at a constant temperature as shown in FIG. Thereafter, curing is gradually started, and after time A (for example, about 20 hours), it is almost completely cured. When this resin 8 is applied to the light emitting element 2 as shown in FIG. 4A and heated, the viscosity of the resin 8 decreases as shown in FIG. It becomes hemispheric on the pin 5 as shown. Thereafter, the resin 8 cures and becomes solid.

【0035】また、樹脂8が熱硬化性樹脂である場合に
は、図5(a)に示すように、発光素子2をピン5上に
載置し、ノズル100から液状の樹脂8を滴下する。ピ
ン5上に滴下された樹脂8は、液状であるためその表面
張力により図5(b)に示すようにピン5上で半球状に
なる。この後、樹脂8に対して一定時間の加熱を行う
と、樹脂8は硬化して固体となる。
When the resin 8 is a thermosetting resin, as shown in FIG. 5A, the light emitting element 2 is mounted on the pins 5 and the liquid resin 8 is dropped from the nozzle 100. . Since the resin 8 dropped on the pin 5 is in a liquid state, it becomes hemispherical on the pin 5 as shown in FIG. Thereafter, when the resin 8 is heated for a certain period of time, the resin 8 hardens and becomes solid.

【0036】なお、樹脂8は硬化して固体となるが、こ
の加熱を行う工程で蛍光物質9は沈殿する。
The resin 8 hardens and becomes solid, but the fluorescent substance 9 precipitates in this heating step.

【0037】図6は、蛍光物質9が沈殿する様子を模式
的に示した図である。同図(a)に示すように、蛍光物
質9は、樹脂8の滴下直後は樹脂8とほぼ均一に混合さ
れた状態となっている。この後、加熱により樹脂8の粘
度が低下すると、同図(b)に示すように蛍光物質9
は、樹脂8内で沈殿し、同図(c)に示すように発光素
子2を覆うような状態となる。この後さらに加熱される
と樹脂8は硬化する。
FIG. 6 is a diagram schematically showing the manner in which the fluorescent substance 9 precipitates. As shown in FIG. 2A, the fluorescent substance 9 is almost uniformly mixed with the resin 8 immediately after the resin 8 is dropped. Thereafter, when the viscosity of the resin 8 is reduced by heating, as shown in FIG.
Precipitates in the resin 8 and covers the light emitting element 2 as shown in FIG. Thereafter, when further heated, the resin 8 is cured.

【0038】ところで、蛍光物質9は、発光素子2を覆
う程度の量でよく、発光素子2から離れたピン5上に沈
殿したものは、発光素子2が発する光を吸収しないので
無意味なものとなってしまう。そのため、樹脂8は、発
光素子2の近傍に塗布(滴下)すればよい。
By the way, the amount of the fluorescent substance 9 may be sufficient to cover the light emitting element 2, and the substance precipitated on the pin 5 remote from the light emitting element 2 is meaningless because it does not absorb the light emitted from the light emitting element 2. Will be. Therefore, the resin 8 may be applied (dropped) near the light emitting element 2.

【0039】図7乃至9は、樹脂の滴下に適したピン形
状の例を示した図である。図7に示すピン15は、その
頭部を浅い皿状に傾斜させたものである。このピン15
の中心に発光素子12を載置し、樹脂18を滴下する
と、ピン15の傾斜により表面張力の影響はより顕著と
なり、樹脂18は発光素子12を中心として均一に塗布
され、蛍光物質9も発光素子12の近傍に沈殿すること
になる。
FIGS. 7 to 9 show examples of pin shapes suitable for dropping resin. The pin 15 shown in FIG. 7 has its head inclined in a shallow dish shape. This pin 15
When the light emitting element 12 is placed at the center of the substrate and the resin 18 is dropped, the influence of the surface tension becomes more remarkable due to the inclination of the pin 15, the resin 18 is uniformly applied around the light emitting element 12, and the fluorescent substance 9 emits light. It will precipitate near the element 12.

【0040】図8に示すピン25は、その頭部に予め滴
下する樹脂28とは異なる樹脂20(材質は樹脂28と
同様でもよい)を周状に塗布したもので、このピン25
に発光素子22を載置して樹脂28を滴下すると、樹脂
28は樹脂20に囲まれた部分以外には広がらず、発光
物質29は発光素子22の近傍にのみ沈殿することにな
る。
The pin 25 shown in FIG. 8 is formed by applying a resin 20 (the material may be the same as that of the resin 28) different from the resin 28 previously dropped on the head thereof in a circumferential shape.
When the light emitting element 22 is placed on the light emitting element 22 and the resin 28 is dropped, the resin 28 does not spread except for the portion surrounded by the resin 20, and the light emitting substance 29 precipitates only in the vicinity of the light emitting element 22.

【0041】図9に示すピン35は、その頭部を堤状に
周状の囲繞35aを形成している。この場合も図8に示
したピン25と同様に、囲繞35aで囲まれた部分に発
光素子32を載置して樹脂38を滴下することで、樹脂
38は発光素子32の近傍に塗布され、発光物質39は
発光素子32の近傍に沈殿することになる。
The pin 35 shown in FIG. 9 has a circumferential enclosure 35a with the head portion embankment-shaped. Also in this case, similarly to the pin 25 shown in FIG. 8, the resin 38 is applied to the vicinity of the light emitting element 32 by placing the light emitting element 32 on the portion surrounded by the surrounding 35a and dropping the resin 38. The light emitting substance 39 precipitates near the light emitting element 32.

【0042】なお、図7乃至9に示したいずれの例にお
いても、皿状の傾斜や囲繞などは発光素子が発する光
(蛍光物質9が波長変換した光)の光路に影響のない高
さであり、従来のカップ状のものとは異なり、側面から
も蛍光物質9で変換された光を視認できる。
In any of the examples shown in FIGS. 7 to 9, the dish-shaped inclination and surroundings are at a height which does not affect the optical path of the light emitted from the light emitting element (the light whose wavelength is converted by the fluorescent substance 9). In addition, unlike the conventional cup shape, the light converted by the fluorescent substance 9 can be visually recognized from the side.

【0043】また、図7乃至9に示した各方法を利用す
ることで、ピン頭部の面積が樹脂を塗布したい面積より
も大きい場合にも所望の範囲に樹脂を塗布することがで
きる。
By using each of the methods shown in FIGS. 7 to 9, even if the area of the pin head is larger than the area where the resin is to be applied, the resin can be applied to a desired range.

【0044】図10は、樹脂の塗布面積よりもピン頭部
が大きいLEDの構成例を示した図であり、同図(a)
はその上面図、同図(b)はその断面図である。
FIG. 10 is a diagram showing an example of the configuration of an LED having a pin head larger than the resin application area.
Is a top view thereof, and FIG. 2B is a sectional view thereof.

【0045】同図に示すように、LED41は、発光素
子42に通電するためのリードピン44−1および44
−2が設けられ、それぞれ発光素子42とワイヤ46−
1および46−2で電気的に接続されている。
As shown in the figure, the LED 41 includes lead pins 44-1 and 44 for supplying electricity to the light emitting element 42.
-2 are provided, and the light emitting element 42 and the wire 46-
1 and 46-2.

【0046】また、発光素子42は、リードピン44−
2の頭部に載置され、樹脂48が塗布されている。リー
ドピン44−2の頭部の面積は、樹脂48を塗布する面
積に比べて大きいものであるが、リードピン44−2の
頭部には、上述したような皿状あるいは囲繞の形成や別
の樹脂による囲繞の形成等のいずれかの処理を施すこと
により、樹脂48は所望の大きさで塗布されることにな
る。
The light emitting element 42 includes a lead pin 44-
2 and the resin 48 is applied. Although the area of the head of the lead pin 44-2 is larger than the area to which the resin 48 is applied, the head of the lead pin 44-2 has the above-mentioned dish-shaped or encircled form or another resin. , The resin 48 is applied in a desired size.

【0047】上述の説明では、発光素子をピン若しくは
リードピンに載置する場合を説明したが、発光素子は基
板等に直接載置することも可能である。この場合、発光
素子を載置する基板に所望の範囲に上述した別の樹脂の
塗布により堤状の囲繞部を形成して樹脂の塗布範囲を定
めることもでき、また、図11に示すような基板を使用
することで、図7乃至9を参照して説明した場合と同様
に樹脂の塗布範囲を限定させることができる。
In the above description, the case where the light emitting element is mounted on the pins or the lead pins has been described. However, the light emitting element can be mounted directly on the substrate or the like. In this case, it is also possible to form a bank-like surrounding portion by applying the above-mentioned another resin to a desired area on the substrate on which the light emitting element is mounted, thereby defining the resin application area, as shown in FIG. By using the substrate, the application range of the resin can be limited as in the case described with reference to FIGS.

【0048】図11は、発光素子を直接載置する基板の
例を示した図である。同図(a)に示す基板53には、
円柱状の突起53aが形成されており、その突起53a
の中心に発光素子52を載置して蛍光物質59を混合し
た樹脂58を塗布(滴下)する。
FIG. 11 is a view showing an example of a substrate on which a light emitting element is directly mounted. The substrate 53 shown in FIG.
A columnar projection 53a is formed, and the projection 53a
A light emitting element 52 is placed at the center of the substrate and a resin 58 mixed with a fluorescent substance 59 is applied (dropped).

【0049】また、同図(b)に示す基板63には、円
周状の溝63aが形成されており、溝63aに囲まれた
領域の中心に発光素子62を載置して蛍光物質69を混
合した樹脂68を塗布(滴下)する。
Further, a circumferential groove 63a is formed in the substrate 63 shown in FIG. 5B, and the light emitting element 62 is placed at the center of the region surrounded by the groove 63a and the fluorescent substance 69 is placed. Is applied (dropped).

【0050】発光素子を直接基板上に載置する場合に
は、複数の発光素子を近接して載置し、複数の発光素子
にまとめて樹脂を塗布することもできる。図12は、基
板上に複数の発光素子を載置したLEDの構成例を示し
た図であり、同図(a)はその上面を、同図(b)はそ
の断面を示している。
When the light-emitting elements are directly mounted on the substrate, a plurality of light-emitting elements can be mounted close to each other, and a resin can be applied to the plurality of light-emitting elements collectively. FIGS. 12A and 12B are diagrams showing a configuration example of an LED in which a plurality of light emitting elements are mounted on a substrate, wherein FIG. 12A shows the upper surface and FIG. 12B shows the cross section.

【0051】同図に示すようにLED71は、突起を有
する基板73上に複数の発光素子72−1乃至72−3
を載置し、この発光素子72−1乃至72−3とリード
ピン74−1および74−2をワイヤーによって接続し
て樹脂78を塗布している。
As shown in the figure, an LED 71 is composed of a plurality of light emitting elements 72-1 to 72-3 on a substrate 73 having a projection.
Are mounted, and the light emitting elements 72-1 to 72-3 are connected to the lead pins 74-1 and 74-2 by wires, and the resin 78 is applied.

【0052】なお、図12に示した例では、リードピン
74−1、74−2に対しても樹脂78を塗布している
が、発光素子72−1乃至72−3に対してのみ樹脂7
8を塗布するようにすることもできることは上述した実
施例からも明らかである。
In the example shown in FIG. 12, the resin 78 is also applied to the lead pins 74-1 and 74-2, but the resin 7 is applied only to the light emitting elements 72-1 to 72-3.
It is clear from the above-mentioned embodiment that the coating 8 can be applied.

【0053】なお、この実施例では、樹脂に蛍光物質を
混合して白色光を出力する場合を説明したが、樹脂に混
合する物質は、蛍光物質に限らず波長の変換や特定波長
を吸収する物質である場合にも同様となる。
In this embodiment, the case where white light is output by mixing a fluorescent substance with a resin has been described. However, the substance mixed with the resin is not limited to the fluorescent substance, and may convert wavelengths or absorb specific wavelengths. The same applies to the case of a substance.

【0054】また、この実施例では、蛍光物質を樹脂内
で沈殿させるように説明したが、この他にも樹脂が液状
若しくは低粘度の状態で、電荷を与えた蛍光物質を電界
によって移動させる等、他の方法によって蛍光物質を移
動させることができるし、混合する蛍光物質によってそ
の蛍光物質を沈殿させないこともできる。
In this embodiment, the description has been given of the case where the fluorescent substance is precipitated in the resin. However, in addition to the above, when the resin is in a liquid or low viscosity state, the charged fluorescent substance is moved by an electric field. The fluorescent substance can be moved by another method, and the fluorescent substance can be prevented from being precipitated by the mixed fluorescent substance.

【0055】[0055]

【発明の効果】以上説明したように、この発明によれ
ば、発光素子を平面上のピンあるいは基板上に載置し、
載置した発光素子を蛍光物資を混合した樹脂で固定およ
び保護するように構成したため、発光素子が発した光は
効率よく波長変換され、この波長変換された光は略18
0度の半球面から視認できる広範囲に照射される光とし
て出力される。
As described above, according to the present invention, a light emitting device is mounted on a flat pin or a substrate,
Since the mounted light emitting element is fixed and protected by a resin mixed with a fluorescent substance, the light emitted from the light emitting element is efficiently wavelength-converted, and the wavelength-converted light is approximately 18
It is output as light that is illuminated over a wide range that can be viewed from a 0 degree hemisphere.

【図面の簡単な説明】[Brief description of the drawings]

【図1】この発明に係る発光ダイオードの概略構成を示
した図。
FIG. 1 is a diagram showing a schematic configuration of a light emitting diode according to the present invention.

【図2】図1(b)中に示した破線で囲んだ部分aの拡
大図。
FIG. 2 is an enlarged view of a portion a surrounded by a broken line shown in FIG.

【図3】樹脂8の特性を示した図。FIG. 3 is a view showing characteristics of a resin 8;

【図4】樹脂8の塗布方法を説明する図。FIG. 4 is a diagram illustrating a method of applying a resin 8;

【図5】樹脂8の滴下方法を説明する図。FIG. 5 is a diagram illustrating a method of dropping a resin 8;

【図6】蛍光物質9が沈殿する様子を模式的に示した
図。
FIG. 6 is a diagram schematically showing a state in which a fluorescent substance 9 precipitates.

【図7】樹脂の滴下に適したピン形状の例を示した図
(1)。
FIG. 7 is a diagram (1) showing an example of a pin shape suitable for resin dripping.

【図8】樹脂の滴下に適したピン形状の例を示した図
(2)。
FIG. 8 is a diagram (2) showing an example of a pin shape suitable for resin dripping.

【図9】樹脂の滴下に適したピン形状の例を示した図
(3)。
FIG. 9 is a diagram (3) showing an example of a pin shape suitable for resin dripping.

【図10】樹脂の塗布面積よりもピン頭部が大きいLE
Dの構成例を示した図。
FIG. 10: LE having a pin head larger than the resin application area
The figure which showed the example of a structure of D.

【図11】発光素子を直接載置する基板の例を示した
図。
FIG. 11 illustrates an example of a substrate on which a light-emitting element is directly mounted.

【図12】基板上に複数の発光素子を載置したLEDの
構成例を示した図。
FIG. 12 is a diagram showing a configuration example of an LED in which a plurality of light emitting elements are mounted on a substrate.

【図13】従来のLEDの概略構成を示した図。FIG. 13 is a diagram showing a schematic configuration of a conventional LED.

【図14】図13(b)中の破線で囲んだb部を拡大し
た図。
FIG. 14 is an enlarged view of a portion b surrounded by a broken line in FIG.

【符号の説明】[Explanation of symbols]

1 発光ダイオード(LED) 2 発光素子 3 基板 4−1、4−2 リードピン 5 ピン 6−1、6−2 ワイヤ 7 樹脂 8 樹脂 9 蛍光物質 12 発光素子 15 ピン 18 樹脂 19 蛍光物質 20 樹脂 22 発光素子 25 ピン 28 樹脂 29 蛍光物質 32 発光素子 35 ピン 35a 囲繞 38 樹脂 39 蛍光物質 41 発光ダイオード(LED) 42 発光素子 44−1、44−2 リードピン 46−1、46−2 ワイヤ 48 樹脂 52 発光素子 53 基板 53a 突起 58 樹脂 59 蛍光物質 62 発光素子 63 基板 63a 溝 68 樹脂 69 蛍光物質 71 発光ダイオード(LED) 72 発光素子 73 基板 74−1、74−2 リードピン 78 樹脂 100 ノズル DESCRIPTION OF SYMBOLS 1 Light emitting diode (LED) 2 Light emitting element 3 Substrate 4-1 and 4-2 Lead pin 5 Pin 6-1 and 6-2 Wire 7 Resin 8 Resin 9 Fluorescent substance 12 Light emitting element 15 Pin 18 Resin 19 Fluorescent substance 20 Resin 22 Light emission Element 25 Pin 28 Resin 29 Fluorescent substance 32 Light emitting element 35 Pin 35a Surrounding 38 Resin 39 Fluorescent substance 41 Light emitting diode (LED) 42 Light emitting element 44-1 and 44-2 Lead pin 46-1 and 46-2 Wire 48 Resin 52 Light emitting element 53 substrate 53a protrusion 58 resin 59 fluorescent substance 62 light emitting element 63 substrate 63a groove 68 resin 69 fluorescent substance 71 light emitting diode (LED) 72 light emitting element 73 substrate 74-1, 74-2 lead pin 78 resin 100 nozzle

───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 4M109 AA01 BA01 BA03 CA06 DA07 DB16 EA01 EB18 EC11 EE12 EE15 GA01 5F041 AA14 CA12 DA07 DA12 DA13 DA18 DA20 DA25 DA26 DA43 DB01 EE25  ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4M109 AA01 BA01 BA03 CA06 DA07 DB16 EA01 EB18 EC11 EE12 EE15 GA01 5F041 AA14 CA12 DA07 DA12 DA13 DA18 DA20 DA25 DA26 DA43 DB01 EE25

Claims (19)

【特許請求の範囲】[Claims] 【請求項1】 平坦部を形成した頭部を有するピンと、 前記ピンの頭部の中央部に載置された発光素子と、 前記発光素子を被覆し、該発光素子から発せられる光の
波長を変換する波長変換物質を少なくとも前記発光素子
と近接する部分に選択的に混合する第1の樹脂とを具備
することを特徴とする発光ダイオード。
1. A pin having a head having a flat portion, a light emitting element mounted on the center of the head of the pin, and a wavelength of light that covers the light emitting element and emits light from the light emitting element. A light emitting diode, comprising: a first resin that selectively mixes a wavelength conversion substance to be converted into at least a portion adjacent to the light emitting element.
【請求項2】 前記波長変換物質は、 蛍光物質であることを特徴とする請求項1記載の発光ダ
イオード。
2. The light emitting diode according to claim 1, wherein the wavelength conversion material is a fluorescent material.
【請求項3】 前記第1の樹脂は、 直径が前記ピンの頭部と同等若しくは小さい半球状であ
ることを特徴とする請求項1記載の発光ダイオード。
3. The light emitting diode according to claim 1, wherein the first resin has a hemispherical shape having a diameter equal to or smaller than a diameter of the head of the pin.
【請求項4】 前記ピンの頭部は、 中央に平坦部を有する皿状をなしていることを特徴とす
る請求項1記載の発光ダイオード。
4. The light emitting diode according to claim 1, wherein the head of the pin has a dish shape having a flat portion in the center.
【請求項5】 前記ピンの頭部は、 その縁部の円周上に堤状の囲繞部を有することを特徴と
する請求項1記載の発光ダイオード。
5. The light emitting diode according to claim 1, wherein the head of the pin has a bank-shaped surrounding portion on a circumference of an edge thereof.
【請求項6】 前記囲繞部は、 前記第1の樹脂とは別の第2の樹脂から形成されること
を特徴とする請求項5記載の発光ダイオード。
6. The light emitting diode according to claim 5, wherein the surrounding portion is formed of a second resin different from the first resin.
【請求項7】 基板と、 前記基板上に載置された発光素子と、 前記発光素子を被覆し、該発光素子から発せられる光の
波長を変換する波長変換物質を少なくとも前記発光素子
と近接する部分に選択的に混合する第1の樹脂とを具備
することを特徴とする発光ダイオード。
7. A substrate, a light-emitting element mounted on the substrate, and a wavelength conversion material that covers the light-emitting element and converts a wavelength of light emitted from the light-emitting element is brought close to at least the light-emitting element. A light emitting diode comprising: a first resin selectively mixed in a portion.
【請求項8】 前記波長変換物質は、 蛍光物質であることを特徴とする請求項7記載の発光ダ
イオード。
8. The light emitting diode according to claim 7, wherein the wavelength conversion material is a fluorescent material.
【請求項9】 前記第1の樹脂は、 前記発光素子の載置位置から突出した半球状であること
を特徴とする請求項7記載の発光ダイオード。
9. The light emitting diode according to claim 7, wherein the first resin has a hemispheric shape protruding from a mounting position of the light emitting element.
【請求項10】 前記基板は、 前記発光素子の載置位置の周囲に溝を有することを特徴
とする請求項7記載の発光ダイオード。
10. The light emitting diode according to claim 7, wherein the substrate has a groove around a position where the light emitting element is mounted.
【請求項11】 前記発光素子の載置位置は、 前記基板上の突出部であることを特徴とする請求項7記
載の発光ダイオード。
11. The light emitting diode according to claim 7, wherein the mounting position of the light emitting element is a protrusion on the substrate.
【請求項12】 平坦部が形成されたピン頭部若しくは
基板上に発光素子を載置する工程と、 前記発光素子に該発光素子から発せられる光の波長を変
換する波長変換物質が混合された液状の熱硬化性樹脂を
滴下する工程と、 前記波長変換物質を前記熱硬化性樹脂内で前記発光素子
の近傍に移動させる工程と、 前記半球体を加熱して硬化させる工程とを少なくとも具
備することを特徴とする発光ダイオードの製造方法。
12. A step of mounting a light emitting element on a pin head or a substrate on which a flat portion is formed, and mixing the light emitting element with a wavelength conversion substance for converting a wavelength of light emitted from the light emitting element. The method includes at least a step of dropping a liquid thermosetting resin, a step of moving the wavelength conversion substance to a position near the light-emitting element in the thermosetting resin, and a step of heating and curing the hemisphere. A method for manufacturing a light emitting diode, comprising:
【請求項13】 前記波長変換物質を前記熱硬化性樹脂
内で前記発光素子の近傍に移動させる工程は、 前記波長変換物質を前記熱硬化性樹脂内で沈殿させるこ
とで行うことを特徴とする請求項12記載の発光ダイオ
ードの製造方法。
13. The method of moving the wavelength converting substance to the vicinity of the light emitting element in the thermosetting resin is performed by precipitating the wavelength converting substance in the thermosetting resin. A method for manufacturing a light emitting diode according to claim 12.
【請求項14】 前記波長変換物質は、 蛍光物質であることを特徴とする請求項12または13
記載の発光ダイオードの製造方法。
14. The wavelength conversion substance according to claim 12, wherein the wavelength conversion substance is a fluorescent substance.
A method for manufacturing the light-emitting diode according to the above.
【請求項15】 前記波長変換物質を前記熱硬化性樹脂
内で前記発光素子の近傍に移動させる工程は、 前記波長変換物質を前記熱硬化性樹脂内で前記発光素子
の近傍に移動させるとともに前記熱硬化性樹脂をその表
面張力を利用して半球体に成形することを特徴とする請
求項12記載の発光ダイオードの製造方法。
15. The step of moving the wavelength converting substance to the vicinity of the light emitting element in the thermosetting resin, the method comprising: moving the wavelength converting substance to the vicinity of the light emitting element in the thermosetting resin. 13. The method for manufacturing a light emitting diode according to claim 12, wherein the thermosetting resin is formed into a hemisphere using the surface tension.
【請求項16】 平坦部が形成されたピン頭部若しくは
基板上に発光素子を載置する工程と、 前記発光素子に該発光素子から発せられる光の波長を変
換する波長変換物質が混合され、加熱することにより粘
性が低下し、さらに加熱することで硬化する樹脂を塗布
する工程と、 前記樹脂を加熱して粘性を低下させ、該粘性が低下した
樹脂内で前記波長変換物質を前記発光素子の近傍に移動
させる工程と、 その後、前記樹脂をさらに加熱して硬化させる工程とを
少なくとも具備することを特徴とする発光ダイオードの
製造方法。
16. A step of mounting a light emitting element on a pin head or a substrate on which a flat portion is formed, and mixing the light emitting element with a wavelength conversion substance for converting a wavelength of light emitted from the light emitting element; A step of applying a resin whose viscosity is reduced by heating and which is cured by further heating; heating the resin to reduce the viscosity, and applying the wavelength converting substance to the light emitting element in the resin having the reduced viscosity. A method for manufacturing a light emitting diode, comprising: at least a step of moving the resin to a vicinity thereof, and a step of further heating and curing the resin.
【請求項17】 前記樹脂を加熱して粘性を低下させ、
該粘性が低下した樹脂内で前記波長変換物質を前記発光
素子の近傍に移動させる工程は、 前記波長変換物質を前記樹脂内で沈殿させることで行う
ことを特徴とする請求項16記載の発光ダイオードの製
造方法。
17. Heating the resin to reduce its viscosity,
17. The light emitting diode according to claim 16, wherein the step of moving the wavelength converting substance to a position near the light emitting element in the resin having reduced viscosity is performed by causing the wavelength converting substance to precipitate in the resin. Manufacturing method.
【請求項18】 前記波長変換物質は、 蛍光物質であることを特徴とする請求項16または17
記載の発光ダイオードの製造方法。
18. The device according to claim 16, wherein the wavelength conversion material is a fluorescent material.
A method for manufacturing the light-emitting diode according to the above.
【請求項19】 前記樹脂を加熱して粘性を低下させ、
該粘性が低下した樹脂内で前記波長変換物質を前記発光
素子の近傍に移動させる工程は、 前記樹脂を加熱して粘性を低下させ、該粘性が低下した
樹脂内で前記波長変換物質を前記発光素子の近傍に移動
させるとともに、該粘性が低下した樹脂をその表面張力
を利用して半球体に成形することを特徴とする請求項1
6記載の発光ダイオードの製造方法。
19. Heating the resin to reduce viscosity,
The step of moving the wavelength conversion substance to the vicinity of the light emitting element in the resin having the reduced viscosity includes heating the resin to reduce the viscosity, and emitting the wavelength conversion substance in the resin having the reduced viscosity. 2. The method according to claim 1, wherein the resin having reduced viscosity is formed into a hemisphere by utilizing its surface tension while being moved to the vicinity of the element.
7. The method for manufacturing a light emitting diode according to item 6.
JP11124230A 1999-04-30 1999-04-30 Light emitting diode and manufacture thereof Pending JP2000315824A (en)

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