JP2000272156A5 - - Google Patents

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Publication number
JP2000272156A5
JP2000272156A5 JP1999083913A JP8391399A JP2000272156A5 JP 2000272156 A5 JP2000272156 A5 JP 2000272156A5 JP 1999083913 A JP1999083913 A JP 1999083913A JP 8391399 A JP8391399 A JP 8391399A JP 2000272156 A5 JP2000272156 A5 JP 2000272156A5
Authority
JP
Japan
Prior art keywords
sputtering
target material
film
film forming
cloth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1999083913A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000272156A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP11083913A priority Critical patent/JP2000272156A/ja
Priority claimed from JP11083913A external-priority patent/JP2000272156A/ja
Priority to US09/534,207 priority patent/US6748959B1/en
Publication of JP2000272156A publication Critical patent/JP2000272156A/ja
Publication of JP2000272156A5 publication Critical patent/JP2000272156A5/ja
Pending legal-status Critical Current

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JP11083913A 1999-03-26 1999-03-26 カーボン膜の成膜方法 Pending JP2000272156A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP11083913A JP2000272156A (ja) 1999-03-26 1999-03-26 カーボン膜の成膜方法
US09/534,207 US6748959B1 (en) 1999-03-26 2000-03-24 Carbon layer forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11083913A JP2000272156A (ja) 1999-03-26 1999-03-26 カーボン膜の成膜方法

Publications (2)

Publication Number Publication Date
JP2000272156A JP2000272156A (ja) 2000-10-03
JP2000272156A5 true JP2000272156A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 2005-06-09

Family

ID=13815853

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11083913A Pending JP2000272156A (ja) 1999-03-26 1999-03-26 カーボン膜の成膜方法

Country Status (2)

Country Link
US (1) US6748959B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JP2000272156A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004065119A1 (ja) 2003-01-20 2004-08-05 Zeon Corporation 積層体およびその製造方法
US7425093B2 (en) * 2003-07-16 2008-09-16 Cabot Corporation Thermography test method and apparatus for bonding evaluation in sputtering targets
JP2005350652A (ja) * 2004-05-12 2005-12-22 Matsushita Electric Ind Co Ltd 潤滑剤、ならびに磁気記録媒体および磁気記録媒体の製造方法
US7235501B2 (en) 2004-12-13 2007-06-26 Micron Technology, Inc. Lanthanum hafnium oxide dielectrics
US7560395B2 (en) 2005-01-05 2009-07-14 Micron Technology, Inc. Atomic layer deposited hafnium tantalum oxide dielectrics
US7410910B2 (en) 2005-08-31 2008-08-12 Micron Technology, Inc. Lanthanum aluminum oxynitride dielectric films
US20080311345A1 (en) * 2006-02-23 2008-12-18 Picodeon Ltd Oy Coating With Carbon Nitride and Carbon Nitride Coated Product
US7759747B2 (en) 2006-08-31 2010-07-20 Micron Technology, Inc. Tantalum aluminum oxynitride high-κ dielectric
US7776765B2 (en) 2006-08-31 2010-08-17 Micron Technology, Inc. Tantalum silicon oxynitride high-k dielectrics and metal gates
US7544604B2 (en) 2006-08-31 2009-06-09 Micron Technology, Inc. Tantalum lanthanide oxynitride films
US7605030B2 (en) 2006-08-31 2009-10-20 Micron Technology, Inc. Hafnium tantalum oxynitride high-k dielectric and metal gates
US7432548B2 (en) 2006-08-31 2008-10-07 Micron Technology, Inc. Silicon lanthanide oxynitride films
US7563730B2 (en) 2006-08-31 2009-07-21 Micron Technology, Inc. Hafnium lanthanide oxynitride films
US7662726B2 (en) * 2007-09-13 2010-02-16 Infineon Technologies Ag Integrated circuit device having a gas-phase deposited insulation layer
US11037764B2 (en) * 2017-05-06 2021-06-15 Applied Materials, Inc. Modular microwave source with local Lorentz force
JP6467089B1 (ja) * 2018-06-13 2019-02-06 学校法人東京理科大学 モスアイ転写型、モスアイ転写型の製造方法及びモスアイ構造の転写方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5842472A (ja) 1981-09-07 1983-03-11 Semiconductor Energy Lab Co Ltd サ−マルヘツド
JPS63210275A (ja) * 1987-02-24 1988-08-31 Semiconductor Energy Lab Co Ltd プラズマ反応装置内を清浄にする方法
JPS6378761A (ja) 1987-09-12 1988-04-08 Semiconductor Energy Lab Co Ltd サーマルヘッド作成方法
DE69322907T2 (de) * 1992-07-24 1999-05-27 Matsushita Electric Industrial Co., Ltd., Kadoma, Osaka Magnetischer Aufzeichnungsträger und sein Herstellungsverfahren
JPH07132628A (ja) 1993-11-10 1995-05-23 Toshiba Corp サーマルヘッドおよびその製造方法
US5712000A (en) * 1995-10-12 1998-01-27 Hughes Aircraft Company Large-scale, low pressure plasma-ion deposition of diamondlike carbon films
US5925494A (en) * 1996-02-16 1999-07-20 Massachusetts Institute Of Technology Vapor deposition of polymer films for photolithography
US6443165B1 (en) * 1996-11-14 2002-09-03 Tokyo Electron Limited Method for cleaning plasma treatment device and plasma treatment system
JP3594759B2 (ja) * 1997-03-19 2004-12-02 株式会社日立製作所 プラズマ処理方法
US6026762A (en) * 1997-04-23 2000-02-22 Applied Materials, Inc. Apparatus for improved remote microwave plasma source for use with substrate processing systems
US6090456A (en) * 1997-05-03 2000-07-18 The United States Of America As Represented By The Secretary Of The Air Force Process for large area deposition of diamond-like carbon films

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