JP2000264795A - Apparatus and method for producing silicon carbide single crystal - Google Patents
Apparatus and method for producing silicon carbide single crystalInfo
- Publication number
- JP2000264795A JP2000264795A JP11078292A JP7829299A JP2000264795A JP 2000264795 A JP2000264795 A JP 2000264795A JP 11078292 A JP11078292 A JP 11078292A JP 7829299 A JP7829299 A JP 7829299A JP 2000264795 A JP2000264795 A JP 2000264795A
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- single crystal
- carbide single
- crystal substrate
- raw material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体や発光ダイ
オードなどの素材に利用することができる炭化珪素単結
晶の製造方法及び製造装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for producing a silicon carbide single crystal which can be used for a material such as a semiconductor or a light emitting diode.
【０００２】[0002]
【従来の技術】従来の炭化珪素単結晶の製造用の黒鉛製
るつぼを図７に示す。従来、昇華法によるＳｉＣバルク
単結晶の製造においては、図７に示すように、容器５１
上方に配置された種結晶５２と容器５１下方に配置され
た原料部５３との温度差をつけるために、種結晶５２と
原料部５３との間に厚さ１０ｍｍ程度の円形の平板５４
を１枚配置するようにしている（特開平８−２９５５９
５号公報参照）。2. Description of the Related Art FIG. 7 shows a conventional graphite crucible for producing a silicon carbide single crystal. Conventionally, in the production of a SiC bulk single crystal by a sublimation method, as shown in FIG.
A circular flat plate 54 having a thickness of about 10 mm is provided between the seed crystal 52 and the raw material part 53 in order to make a temperature difference between the seed crystal 52 disposed above and the raw material part 53 disposed below the container 51.
(See Japanese Unexamined Patent Publication No. 8-29559).
No. 5).
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、円形平
板５４の表面温度が不均一であるため、円形平板５４の
熱輻射を受ける種結晶５２及び成長結晶５５の表面温度
も不均一となり、成長した炭化珪素単結晶５５の成長表
面が平坦にならず、高品位な炭化珪素単結晶５５が得ら
れないという問題がある。However, since the surface temperature of the circular flat plate 54 is non-uniform, the surface temperatures of the seed crystal 52 and the grown crystal 55 which receive the heat radiation of the circular flat plate 54 also become non-uniform, and There is a problem that the growth surface of silicon single crystal 55 is not flat and high-quality silicon carbide single crystal 55 cannot be obtained.
【０００４】本発明は上記問題に鑑みて成され、平板か
らの輻射熱を均一化させることにより、成長表面を平坦
にできる炭化珪素単結晶の製造方法及びそれに適用され
る製造装置を提供することを目的とする。The present invention has been made in view of the above problems, and has as its object to provide a method of manufacturing a silicon carbide single crystal capable of flattening a growth surface by making radiant heat from a flat plate uniform, and a manufacturing apparatus applied to the method. Aim.
【０００５】[0005]
【課題を解決するための手段】上記問題を解決すべく、
請求項１に記載の発明においては、容器（１、２）内
に、成長させる炭化珪素単結晶の原料（４）と、種結晶
となる炭化珪素単結晶基板（３）を配置し、原料を昇華
させて炭化珪素単結晶基板上に炭化珪素単結晶（１０）
を成長させる単結晶製造方法において、少なくとも炭化
珪素単結晶基板の直径以上の平面部を有する複数枚の板
部材（５ａ）を、炭化珪素単結晶基板と原料との間に、
炭化珪素単結晶基板の成長表面と平面部とが対向するよ
うに積層配置して炭化珪素単結晶の成長を行なうことを
特徴としている。In order to solve the above problems,
According to the first aspect of the present invention, a raw material (4) of a silicon carbide single crystal to be grown and a silicon carbide single crystal substrate (3) serving as a seed crystal are arranged in containers (1, 2), and the raw materials are Sublimated silicon carbide single crystal on silicon carbide single crystal substrate (10)
In the method for producing a single crystal, a plurality of plate members (5a) having at least a plane portion having a diameter equal to or larger than the diameter of the silicon carbide single crystal substrate are placed between the silicon carbide single crystal substrate and the raw material.
It is characterized in that a silicon carbide single crystal is grown by being stacked and arranged so that a growth surface of a silicon carbide single crystal substrate and a plane portion face each other.
【０００６】このように、炭化珪素単結晶基板と炭化珪
素原料との間に複数の板部材を配置することによって、
複数の板部材それぞれの熱輻射によって、複数の板部材
のうち最も炭化珪素単結晶基板に近い側において板部材
の上面温度が略均一になるようにできる。これにより、
炭化珪素単結晶の成長表面を平坦にできる。例えば、請
求項２に示すように、複数枚の板部材のそれぞれの間に
隙間を設けて配置し、該複数枚の板部材それぞれの外周
部で支持されるようにすることができる。By arranging a plurality of plate members between the silicon carbide single crystal substrate and the silicon carbide raw material,
By the thermal radiation of each of the plurality of plate members, the upper surface temperature of the plate members can be made substantially uniform on the side closest to the silicon carbide single crystal substrate among the plurality of plate members. This allows
The growth surface of the silicon carbide single crystal can be made flat. For example, as described in claim 2, a gap may be provided between each of the plurality of plate members so as to be supported by the outer periphery of each of the plurality of plate members.
【０００７】請求項３に記載の発明においては、少なく
とも炭化珪素単結晶基板の直径以上の平面部を有すると
共に原料の蒸気を通過させることができる貫通孔が形成
された板部材（５ｃ）を、炭化珪素単結晶基板と原料と
の間に、炭化珪素単結晶基板の成長表面と平面部とが対
向するように配置し、この板部材の外周を容器の内壁で
支持するようにして炭化珪素単結晶の成長を行なうこと
を特徴としている。According to the third aspect of the present invention, a plate member (5c) having at least a flat portion having a diameter equal to or larger than the diameter of the silicon carbide single crystal substrate and having a through-hole through which a raw material vapor can pass is formed. The silicon carbide single-crystal substrate is placed between the raw material and the raw material such that the growth surface of the silicon carbide single-crystal substrate and the flat portion face each other, and the outer periphery of this plate member is supported by the inner wall of the container. It is characterized by growing crystals.
【０００８】このように、板部材の外周を容器の内壁で
支持するようにすることで、支持棒などによる支持とこ
となり、支持部分からの熱伝導による影響を受け難くで
きる。これにより、請求項１と同様の効果が得られる。
請求項４に記載の発明においては、支持棒（７）にて、
少なくとも炭化珪素単結晶基板の直径以上の平面部を有
すると共に該平面部における厚みが支持棒の支持部分の
直径以上となっている板部材（５ｂ）を、炭化珪素単結
晶基板と原料との間に、炭化珪素単結晶基板の成長表面
と平面部とが対向するように配置して炭化珪素単結晶の
成長を行なうことを特徴としている。As described above, by supporting the outer periphery of the plate member with the inner wall of the container, the plate member is supported by a support rod or the like, and is less likely to be affected by heat conduction from the support portion. Thereby, the same effect as the first aspect can be obtained.
In the invention according to claim 4, the support rod (7)
A plate member (5b) having at least a plane portion having a diameter equal to or greater than the diameter of the silicon carbide single crystal substrate and having a thickness in the plane portion equal to or greater than the diameter of the support portion of the support rod is placed between the silicon carbide single crystal substrate and the raw material. In addition, a silicon carbide single crystal is grown by arranging a growth surface of a silicon carbide single crystal substrate and a plane portion to face each other.
【０００９】このように、板部材の板厚を支持棒による
支持部分の直径以上にすることにより、板部材の厚みに
よって板部材の上面において熱伝導が略均一に行われる
ようにできる。これにより、請求項１と同様の効果が得
られる。好ましくは、請求項５に示すように、板部材の
板厚が、支持棒の支持部の直径に対して少なくとも２倍
以上となっているものがよい。As described above, by making the thickness of the plate member equal to or greater than the diameter of the portion supported by the support rod, heat conduction can be performed substantially uniformly on the upper surface of the plate member by the thickness of the plate member. Thereby, the same effect as the first aspect can be obtained. Preferably, the thickness of the plate member is at least twice as large as the diameter of the support portion of the support bar.
【００１０】なお、請求項６に示すように、板部材を均
質な黒鉛で構成したり、請求項７に示すように、板部材
を多孔質黒鉛で構成することができる。また、請求項８
に示すように、板部材を円形状で構成すると、板部材内
での熱伝導が板部材の中央部を中心として対称とするこ
とができる。なお、上記各請求項に示す炭化珪素単結晶
の製造方法は、請求項１０乃至１４に示す炭化珪素単結
晶の製造装置を用いるて実施可能である。[0010] The plate member can be made of homogeneous graphite as described in claim 6, or the plate member can be formed of porous graphite as described in claim 7. Claim 8
As shown in (1), when the plate member is formed in a circular shape, the heat conduction in the plate member can be symmetric about the center of the plate member. The method for manufacturing a silicon carbide single crystal described in each of the above claims can be implemented using the apparatus for manufacturing a silicon carbide single crystal described in claims 10 to 14.
【００１１】なお、上記した 括弧内の符号は後述する
実施形態における図中の符号と対応している。Note that the reference numerals in parentheses correspond to the reference numerals in the drawings in the embodiment described later.
【００１２】[0012]
【発明の実施の形態】（第１実施形態）図１に、本発明
の第１実施形態で用いる結晶成長装置としての黒鉛製る
つぼを示す。この黒鉛製るつぼは、黒鉛製るつぼの底部
に備えられた炭化珪素原料粉末４を熱処理によって昇華
させ、種結晶である炭化珪素単結晶基板３上に炭化珪素
単結晶１０を結晶成長させるものである。DESCRIPTION OF THE PREFERRED EMBODIMENTS (First Embodiment) FIG. 1 shows a graphite crucible as a crystal growth apparatus used in a first embodiment of the present invention. In this graphite crucible, silicon carbide raw material powder 4 provided at the bottom of the graphite crucible is sublimated by heat treatment to grow silicon carbide single crystal 10 on silicon carbide single crystal substrate 3 as a seed crystal. .
【００１３】この黒鉛製るつぼは、上面が開口している
略円筒形状のるつぼ本体１と、るつぼ本体１の開口部を
塞ぐ蓋材２とを備えて構成されている。この黒鉛製るつ
ぼを構成する蓋材２を台座として、台座上に炭化珪素単
結晶基板３が配置されている。そして、るつぼ本体１の
底部には炭化珪素原料粉末４が充填されており、この炭
化珪素原料粉末４を昇華させることによって、炭化珪素
単結晶基板３を種結晶として、種結晶の表面に炭化珪素
単結晶を結晶成長させられるようになっている。The graphite crucible includes a substantially cylindrical crucible body 1 having an open upper surface, and a lid 2 for closing the opening of the crucible body 1. Using the lid member 2 constituting the graphite crucible as a pedestal, a silicon carbide single crystal substrate 3 is arranged on the pedestal. Silicon carbide raw material powder 4 is filled in the bottom of crucible body 1, and by sublimating silicon carbide raw material powder 4, silicon carbide single crystal substrate 3 is used as a seed crystal, and silicon carbide is formed on the surface of the seed crystal. A single crystal can be grown.
【００１４】また、黒鉛製るつぼには、炭化珪素原料粉
末４と炭化珪素単結晶基板３との間に配置された複数枚
（本実施形態では２枚）の遮蔽板（板部材）５ａが備え
られている。これらの遮蔽板５ａは、炭化珪素単結晶基
板３の成長表面と対向する平面を有する略円形の平板で
構成されている。そして、複数枚の遮蔽板５ａそれぞれ
の間に遮蔽板５ａの外周と同等の径を有する円環状の環
状部材６が配置され、複数枚の遮蔽板５ａのそれぞれの
間に隙間が空けられた構成されている。これら遮蔽板５
ａは、均一材質のもの、例えば黒鉛でされている。The graphite crucible is provided with a plurality of (two in this embodiment) shielding plates (plate members) 5a disposed between the silicon carbide raw material powder 4 and the silicon carbide single crystal substrate 3. Have been. Shielding plate 5 a is formed of a substantially circular flat plate having a plane facing the growth surface of silicon carbide single crystal substrate 3. An annular member 6 having a diameter equal to the outer circumference of the shielding plate 5a is arranged between each of the shielding plates 5a, and a gap is provided between each of the shielding plates 5a. Have been. These shielding plates 5
“a” is made of a uniform material, for example, graphite.
【００１５】また、これらの遮蔽板５ａのうち最も炭化
珪素原料粉末４側のものは、その中心部がるつぼ本体１
の底部から延ばされた支持棒７によって支持されてい
る。この遮蔽板５ａの板厚は、該遮蔽板５ａの支持部
分、つまり遮蔽板５ａと支持棒７との接合部位における
支持棒７の直径以上となっている。なお、図示しない
が、黒鉛製るつぼは、アルゴンガスが導入できる真空容
器の中でヒータにより加熱できるようになっており、こ
のヒータのパワーを調節することによって種結晶である
炭化珪素単結晶基板３の温度が炭化珪素原料粉末４の温
度よりも１００℃程度低温に保たれるようにできる。The one of these shielding plates 5a which is closest to the silicon carbide raw material powder 4 has a central portion whose crucible body 1
Is supported by a support rod 7 extending from the bottom of the support. The thickness of the shield plate 5a is equal to or greater than the diameter of the support bar 7 at the portion where the shield plate 5a is supported, that is, at the joint between the shield plate 5a and the support bar 7. Although not shown, the graphite crucible can be heated by a heater in a vacuum vessel into which an argon gas can be introduced. By adjusting the power of the heater, the silicon carbide single crystal substrate 3 serving as a seed crystal can be heated. Can be maintained at about 100 ° C. lower than the temperature of the silicon carbide raw material powder 4.
【００１６】このように構成された結晶成長装置を用い
た炭化珪素単結晶の製造工程について説明する。まず、
炭化珪素原料粉末４の温度を２０００〜２５００℃に加
熱する。そして、ヒータ調節等により、炭化珪素単結晶
基板３の温度が炭化珪素原料粉末４の温度よりも低くな
るように、黒鉛製るつぼ内に温度勾配を設ける。A process for manufacturing a silicon carbide single crystal using the thus-configured crystal growth apparatus will be described. First,
The temperature of silicon carbide raw material powder 4 is heated to 2000 to 2500 ° C. Then, a temperature gradient is provided in the graphite crucible so that the temperature of silicon carbide single crystal substrate 3 is lower than the temperature of silicon carbide raw material powder 4 by adjusting a heater or the like.
【００１７】次に、黒鉛製るつぼ内の圧力は０. １〜５
０Ｔｏｒｒとして、昇華法成長を開始すると、炭化珪素
粉末４が昇華して昇華ガスとなり、炭化珪素単結晶基板
３に到達し、炭化珪素粉末４側よりも相対的に低温とな
る炭化珪素単結晶基板３の表面上に炭化珪素単結晶１０
が成長する。その際、遮蔽板５ａの下面の温度は、炭化
珪素原料粉末４及び支持棒７による厚みによる熱輻射や
熱伝導により不均一になるが、最も炭化珪素単結晶基板
３に近い遮蔽板５ａの上面の温度は、複数の遮蔽板５ａ
の熱輻射によって略均一になる。Next, the pressure in the graphite crucible is 0.1-5.
When the sublimation growth is started at 0 Torr, the silicon carbide powder 4 sublimates and becomes a sublimation gas, reaches the silicon carbide single crystal substrate 3, and has a relatively lower temperature than the silicon carbide powder 4 side. 3 on the surface of silicon carbide single crystal 10
Grows. At this time, the temperature of the lower surface of shielding plate 5a becomes non-uniform due to heat radiation and heat conduction due to the thickness of silicon carbide raw material powder 4 and support bar 7, but the upper surface of shielding plate 5a closest to silicon carbide single crystal substrate 3 Of the plurality of shielding plates 5a
And becomes substantially uniform due to heat radiation.
【００１８】図２に、本実施形態における結晶成長装置
を用いて炭化珪素単結晶１０を結晶成長させた場合（支
持棒による支持）における遮蔽板５ａの上面温度のシミ
ュレーション結果を示す。なお、参考として、遮蔽板５
ａを１枚のみにした従来構造で結晶成長を行なった場合
における遮蔽板５ａの上面温度のシミュレーション結果
を図２中に示す。なお、本図において遮蔽板５ａの中心
部からの距離をＲとし、その場所における温度をＴとし
ている。FIG. 2 shows a simulation result of the upper surface temperature of shielding plate 5a when silicon carbide single crystal 10 is grown (supported by a support rod) using the crystal growth apparatus of the present embodiment. For reference, the shielding plate 5
FIG. 2 shows a simulation result of the upper surface temperature of the shielding plate 5a in the case where the crystal growth is performed with the conventional structure having only one a. In this figure, the distance from the center of the shielding plate 5a is R, and the temperature at that location is T.
【００１９】この図からも、遮蔽板５ａを複数枚積層し
た場合に方が、従来のように１枚の場合よりも上面温度
が均一となっていることが判る。なお、図２中では、遮
蔽板５ａの中心部からの距離が遠くなった場所で遮蔽板
５ａの上面の温度が上昇した状態となっているが、これ
らの場所は炭化珪素単結晶基板３の径を超えたところで
あり、少なくとも炭化珪素単結晶基板３と対向する場所
においては遮蔽板５ａの上面の温度が均一となった状態
となっている。From this figure, it can be seen that the upper surface temperature is more uniform when a plurality of shielding plates 5a are stacked than in the conventional case where one shielding plate 5a is stacked. In FIG. 2, the temperature of the upper surface of shielding plate 5 a is increased at a place where the distance from the center of shielding plate 5 a is long. The temperature of the upper surface of shielding plate 5a has become uniform at least at a place where the diameter exceeds the diameter and at least a place facing silicon carbide single crystal substrate 3.
【００２０】従って、遮蔽板５ａの上面の熱輻射を直接
受ける炭化珪素単結晶基板３及び炭化珪素単結晶１０の
表面温度は均一になり、炭化珪素単結晶１０の表面は平
坦化され、高品質な炭化珪素単結晶１０を成長させるこ
とができる。なお、図２中の容器内壁での支持について
は後述する。 （第２実施形態）図３に、本発明の第２実施形態で用い
る黒鉛製るつぼを示す。なお、本実施形態における黒鉛
製るつぼは、第１実施形態とほぼ同様の構成であるた
め、異なる構成についてのみ説明する。Therefore, the surface temperatures of silicon carbide single crystal substrate 3 and silicon carbide single crystal 10 which directly receive heat radiation on the upper surface of shielding plate 5a become uniform, the surface of silicon carbide single crystal 10 is flattened, and high quality is obtained. Silicon carbide single crystal 10 can be grown. The support on the inner wall of the container in FIG. 2 will be described later. (Second Embodiment) FIG. 3 shows a graphite crucible used in a second embodiment of the present invention. The graphite crucible according to the present embodiment has substantially the same configuration as that of the first embodiment, and thus only different configurations will be described.
【００２１】本実施形態における黒鉛製るつぼには、炭
化珪素原料粉末４と炭化珪素単結晶基板３との間に配置
された遮蔽板（板部材）５ｂが備えられている。この遮
蔽板５ｂは、炭化珪素単結晶基板３の成長表面と対向す
る平面を有する略円形の平板で構成されている。この遮
蔽板５ｂは、均一材質のもの、例えば黒鉛でされてい
る。この遮蔽板５ｂは、中心部がるつぼ本体１の底部か
ら延ばされた支持棒７によって支持されている。この遮
蔽板５ｂの板厚は、該遮蔽板５ｂの支持部分、つまり遮
蔽板５ｂと支持棒との接合部位における支持棒の直径の
略２倍以上となっている。The graphite crucible according to the present embodiment is provided with a shielding plate (plate member) 5 b disposed between the silicon carbide raw material powder 4 and the silicon carbide single crystal substrate 3. Shielding plate 5 b is formed of a substantially circular flat plate having a plane facing the growth surface of silicon carbide single crystal substrate 3. The shielding plate 5b is made of a uniform material, for example, graphite. The shielding plate 5 b is supported by a support bar 7 whose center extends from the bottom of the crucible body 1. The thickness of the shield plate 5b is approximately twice or more the diameter of the support bar at the portion where the shield plate 5b is supported, that is, at the joint between the shield plate 5b and the support bar.
【００２２】このように構成された結晶成長装置を用い
て、第１実施形態と同様の工程を施して炭化珪素単結晶
を結晶成長させる。その際、遮蔽板５ｂの下面の温度
は、炭化珪素原料粉末４及び支持棒７による熱輻射や熱
伝導により不均一になるが、遮蔽板５ｂの上面の温度
は、遮蔽板５ｂの厚みに熱伝導によって略均一になる。Using the crystal growth apparatus configured as described above, the same process as in the first embodiment is performed to grow a silicon carbide single crystal. At this time, the temperature of the lower surface of the shielding plate 5b becomes non-uniform due to heat radiation and heat conduction by the silicon carbide raw material powder 4 and the support rods 7, but the temperature of the upper surface of the shielding plate 5b is reduced by the thickness of the shielding plate 5b. It becomes substantially uniform by conduction.
【００２３】図４に、本実施形態における結晶成長装置
を用いて炭化珪素単結晶１０を結晶成長させた場合にお
ける遮蔽板５ｂの上面温度のシミュレーション結果を示
す。なお、参考として、遮蔽板５ｂの板厚を支持棒７の
直径と同等にした場合、及び遮蔽板５ｂの板厚を支持棒
７の直径の１／２にした場合における遮蔽板５ｂの上面
温度のシミュレーション結果を図４中に示す。FIG. 4 shows a simulation result of the upper surface temperature of shielding plate 5b in the case where silicon carbide single crystal 10 is grown using the crystal growth apparatus of this embodiment. For reference, the upper surface temperature of the shielding plate 5b when the thickness of the shielding plate 5b is equal to the diameter of the support rod 7 and when the thickness of the shielding plate 5b is 1/2 of the diameter of the support rod 7 are set. FIG. 4 shows the result of the simulation.
【００２４】この図からも、遮蔽板５ｂの板厚を厚くし
た場合の方が、従来のように薄い場合よりも上面温度が
均一となっていることが判る。従って、遮蔽板５ｂの上
面の熱輻射を直接受ける炭化珪素単結晶基板３及び炭化
珪素単結晶１０の表面温度は均一になり、炭化珪素単結
晶１０の表面は平坦化され、高品質な炭化珪素単結晶１
０を成長させることができる （第３実施形態）図５に、本発明の第２実施形態で用い
る黒鉛製るつぼを示す。なお、本実施形態における黒鉛
製るつぼは、第１実施形態とほぼ同様の構成であるた
め、異なる構成についてのみ説明する。From this figure, it can be seen that the upper surface temperature is more uniform when the shielding plate 5b is made thicker than when it is thinner as in the conventional case. Therefore, the surface temperatures of silicon carbide single crystal substrate 3 and silicon carbide single crystal 10 that directly receive heat radiation on the upper surface of shielding plate 5b become uniform, the surface of silicon carbide single crystal 10 is flattened, and high quality silicon carbide is obtained. Single crystal 1
Third Embodiment FIG. 5 shows a graphite crucible used in the second embodiment of the present invention. The graphite crucible according to the present embodiment has substantially the same configuration as that of the first embodiment, and thus only different configurations will be described.
【００２５】本実施形態における黒鉛製るつぼには、炭
化珪素原料粉末４と炭化珪素単結晶基板３との間に配置
された遮蔽板（板部材）５ｃが備えられている。遮蔽板
５ｃは、炭化珪素単結晶基板３の成長表面と対向する平
面を有する略円形の平板で構成されている。遮蔽板５ｃ
は、略円形の外周がるつぼ本体１の内壁のガイドに支持
された構成となっている。この遮蔽板５ｃは、例えば均
一材質の多孔質黒鉛でされており、炭化珪素の昇華ガス
が通過できるようになっている。The graphite crucible according to this embodiment is provided with a shielding plate (plate member) 5 c disposed between the silicon carbide raw material powder 4 and the silicon carbide single crystal substrate 3. Shielding plate 5 c is formed of a substantially circular flat plate having a plane facing the growth surface of silicon carbide single crystal substrate 3. Shield plate 5c
Has a substantially circular outer periphery supported by a guide on the inner wall of the crucible body 1. The shielding plate 5c is made of, for example, porous graphite of a uniform material so that a sublimation gas of silicon carbide can pass therethrough.
【００２６】このように構成された結晶成長装置を用い
て、第１実施形態と同様の工程を施して炭化珪素単結晶
１０を結晶成長させる。その際、遮蔽板５ｃは、第１、
第２実施形態のように支持棒７によって支持されるもの
ではなく、るつぼ本体１の内壁のガイドによって支持さ
れるものであるため、支持される部分から受ける熱伝導
による影響を受け難く、遮蔽板５ｃの上面の温度が遮蔽
板５ｃの厚みに熱伝導によって略均一になる。Using the crystal growth apparatus configured as described above, the same steps as in the first embodiment are performed to grow silicon carbide single crystal 10. At that time, the shielding plate 5c is
It is not supported by the support bar 7 as in the second embodiment, but is supported by a guide on the inner wall of the crucible main body 1, so it is hardly affected by the heat conduction received from the supported portion, and the shielding plate The temperature of the upper surface of 5c becomes substantially uniform by the heat conduction to the thickness of the shielding plate 5c.
【００２７】図６に、本実施形態における結晶成長装置
を用いて炭化珪素単結晶１０を結晶成長させた場合にお
ける遮蔽板５ｃの上面温度のシミュレーション結果を示
す。なお、参考として、従来のように支持棒で遮蔽板５
ｃを支持した場合における遮蔽板５ｃの上面温度のシミ
ュレーション結果を図４中に示す。この図からも、遮蔽
板５ｃの外周をるつぼ本体１で支持した場合の方が、従
来のように支持棒で支持する場合よりも上面温度が均一
となっていることが判る。FIG. 6 shows a simulation result of the upper surface temperature of shielding plate 5c when silicon carbide single crystal 10 is grown using the crystal growth apparatus of this embodiment. For reference, the shielding plate 5 is supported by a support rod as in the prior art.
FIG. 4 shows a simulation result of the upper surface temperature of the shielding plate 5c in the case where c is supported. From this figure, it can be seen that the upper surface temperature is more uniform when the outer periphery of the shielding plate 5c is supported by the crucible body 1 than when it is supported by a support rod as in the related art.
【００２８】従って、遮蔽板５ｃの上面の熱輻射を直接
受ける炭化珪素単結晶基板３及び炭化珪素単結晶１０の
表面温度は均一になり、炭化珪素単結晶１０の表面は平
坦化され、高品質な炭化珪素単結晶１０を成長させるこ
とができる。 （他の実施形態）上記第１実施形態では、複数枚の遮蔽
板５ａを円環部材で支持するようにしたが、形状のもの
で支持するようにしてもよい。また、複数枚の遮蔽板５
ａを重ねた場合を示したが、この遮蔽板５ａの板厚を適
宜変更してもよい。さらに、複数枚の遮蔽板５ａを重ね
ることによって第２実施形態に示したように板厚の大き
な遮蔽板５ｂとしてもよい。Therefore, the surface temperatures of silicon carbide single crystal substrate 3 and silicon carbide single crystal 10 which directly receive thermal radiation on the upper surface of shielding plate 5c become uniform, the surface of silicon carbide single crystal 10 is flattened, and high quality is obtained. Silicon carbide single crystal 10 can be grown. (Other Embodiments) In the first embodiment, the plurality of shielding plates 5a are supported by the annular member. However, the shielding plates 5a may be supported by shapes. In addition, a plurality of shielding plates 5
Although the case where “a” is overlapped is shown, the plate thickness of the shielding plate 5a may be appropriately changed. Further, a plurality of shielding plates 5a may be stacked to form a thick shielding plate 5b as shown in the second embodiment.
【００２９】また、第１、第２実施形態では、遮蔽板５
ａ、５ｂの中心を支持棒で支持するようにしているが、
第３実施形態のように容器の内壁で支持するようにして
もよい。例えば、第１実施形態の遮蔽板５ａを容器の内
壁で支持するようにした場合のシミュレーション結果を
図２中に示す。このように、遮蔽板５ａを支持棒で支持
しないで容器の内壁で支持するようにすれば、さらに遮
蔽板５ａの上面温度の均一化を図ることができる。In the first and second embodiments, the shielding plate 5
Although the center of a, 5b is supported by the support rod,
You may make it support with the inner wall of a container like 3rd Embodiment. For example, FIG. 2 shows a simulation result when the shielding plate 5a of the first embodiment is supported by the inner wall of the container. If the shielding plate 5a is supported by the inner wall of the container without being supported by the support rod, the temperature of the upper surface of the shielding plate 5a can be further uniformed.
【００３０】また、第３実施形態では、遮蔽板５ｃとし
てポーラスカーボンを用いているが、板材に貫通孔が形
成されたものでもよい。Further, in the third embodiment, porous carbon is used as the shielding plate 5c, but a shielding plate having a through hole may be used.
【図１】本発明の第１実施形態における黒鉛製るつぼの
全体構成を示す図である。FIG. 1 is a diagram showing an overall configuration of a graphite crucible according to a first embodiment of the present invention.
【図２】図１に示す黒鉛製るつぼを用いて炭化系珪素単
結晶を成長させた場合における遮蔽板の上面温度のシミ
ュレーション結果を示す図である。FIG. 2 is a diagram showing a simulation result of an upper surface temperature of a shielding plate when a silicon carbide single crystal is grown using the graphite crucible shown in FIG.
【図３】本発明の第２実施形態における黒鉛製るつぼの
全体構成を示す図である。FIG. 3 is a diagram showing an overall configuration of a graphite crucible according to a second embodiment of the present invention.
【図４】図３に示す黒鉛製るつぼを用いて炭化系珪素単
結晶を成長させた場合における遮蔽板の上面温度のシミ
ュレーション結果を示す図である。4 is a diagram showing a simulation result of an upper surface temperature of a shielding plate when a silicon carbide single crystal is grown using the graphite crucible shown in FIG.
【図５】本発明の第３実施形態における黒鉛製るつぼの
全体構成を示す図である。FIG. 5 is a view showing an entire configuration of a graphite crucible according to a third embodiment of the present invention.
【図６】図５に示す黒鉛製るつぼを用いて炭化系珪素単
結晶を成長させた場合における遮蔽板の上面温度のシミ
ュレーション結果を示す図である。FIG. 6 is a diagram showing a simulation result of an upper surface temperature of a shielding plate when a silicon carbide single crystal is grown using the graphite crucible shown in FIG.
【図７】従来の黒鉛製るつぼの全体構成を示す図であ
る。FIG. 7 is a view showing the entire configuration of a conventional graphite crucible.
１…るつぼ本体、２…蓋材、３…炭化珪素単結晶基板、
４…炭化珪素原料粉末、５ａ、５ｂ、５ｃ…遮蔽板、６
…円環部材、７…支持棒、１０…炭化珪素単結晶。DESCRIPTION OF SYMBOLS 1 ... Crucible main body, 2 ... Lid material, 3 ... Silicon carbide single crystal substrate,
4 ... silicon carbide raw material powder, 5a, 5b, 5c ... shielding plate, 6
... annular member, 7 ... support rod, 10 ... silicon carbide single crystal.
Claims (14)
素単結晶の原料（４）と、種結晶となる炭化珪素単結晶
基板（３）を配置し、前記原料を昇華させて前記炭化珪
素単結晶基板上に炭化珪素単結晶（１０）を成長させる
炭化珪素単結晶製造方法において、 少なくとも前記炭化珪素単結晶基板の直径以上の平面部
を有する複数枚の板部材（５ａ）を、前記炭化珪素単結
晶基板と前記原料との間に、前記炭化珪素単結晶基板の
成長表面と前記平面部とが対向するように積層配置して
前記単結晶の成長を行なうことを特徴とする炭化珪素単
結晶の製造方法。A raw material (4) of a silicon carbide single crystal to be grown and a silicon carbide single crystal substrate (3) serving as a seed crystal are arranged in containers (1, 2), and the raw material is sublimated to In a silicon carbide single crystal manufacturing method for growing a silicon carbide single crystal (10) on a silicon carbide single crystal substrate, a plurality of plate members (5a) having at least a plane portion having a diameter equal to or larger than the diameter of the silicon carbide single crystal substrate are provided. The single crystal is grown by arranging between the silicon carbide single crystal substrate and the raw material such that the growth surface of the silicon carbide single crystal substrate and the plane portion face each other. A method for producing a silicon single crystal.
間を設けて配置し、該複数枚の板部材それぞれの外周部
で支持されるようにすることを特徴とする請求項１に記
載の炭化珪素単結晶の製造方法。2. The apparatus according to claim 1, wherein a gap is provided between each of the plurality of plate members so that the plurality of plate members are supported by the outer peripheral portions of each of the plurality of plate members. Of producing a silicon carbide single crystal.
素単結晶の原料（４）と、種結晶となる炭化珪素単結晶
基板（３）を配置し、前記原料を昇華させて前記炭化珪
素単結晶基板上に炭化珪素単結晶（１０）を成長させる
炭化珪素単結晶製造方法において、 少なくとも前記炭化珪素単結晶基板の直径以上の平面部
を有すると共に前記原料の蒸気を通過させることができ
る貫通孔が形成された板部材（５ｃ）を、前記炭化珪素
単結晶基板と前記原料との間に、前記炭化珪素単結晶基
板の成長表面と前記平面部とが対向するように配置して
前記炭化珪素単結晶の成長を行なうことを特徴とする炭
化珪素単結晶の製造方法。3. A silicon carbide single crystal raw material (4) to be grown and a silicon carbide single crystal substrate (3) serving as a seed crystal are arranged in containers (1, 2), and the raw material is sublimated. In a silicon carbide single crystal manufacturing method for growing a silicon carbide single crystal (10) on a silicon carbide single crystal substrate, it is preferable that the raw material vapor has at least a plane portion larger than the diameter of the silicon carbide single crystal substrate. A plate member (5c) having a through hole formed therein is arranged between the silicon carbide single crystal substrate and the raw material such that the growth surface of the silicon carbide single crystal substrate and the plane portion face each other. A method for producing a silicon carbide single crystal, comprising growing the silicon carbide single crystal.
持することを特徴とする請求項１乃至３のいずれか１つ
に記載の炭化珪素単結晶の製造方法。4. The method for producing a silicon carbide single crystal according to claim 1, wherein an outer periphery of said plate member is supported by an inner wall of said container.
素単結晶の原料（４）と、種結晶となる炭化珪素単結晶
基板（３）を配置し、前記原料を昇華させて前記炭化珪
素単結晶基板上に炭化珪素単結晶（１０）を成長させる
炭化珪素単結晶製造方法において、 支持棒（７）にて、少なくとも前記炭化珪素単結晶基板
の直径以上の平面部を有すると共に該平面部における厚
みが前記支持棒の支持部分の直径以上となっている板部
材（５ｂ）を、前記炭化珪素単結晶基板と前記原料との
間に、前記炭化珪素単結晶基板の成長表面と前記平面部
とが対向するように配置して前記炭化珪素単結晶の成長
を行なうことを特徴とする炭化珪素単結晶の製造方法。5. A silicon carbide single crystal raw material (4) to be grown and a silicon carbide single crystal substrate (3) serving as a seed crystal are arranged in containers (1, 2), and the raw material is sublimated to form the silicon carbide single crystal substrate. A silicon carbide single crystal manufacturing method for growing a silicon carbide single crystal (10) on a silicon carbide single crystal substrate, comprising: a support rod (7) having at least a plane portion having a diameter equal to or larger than the diameter of the silicon carbide single crystal substrate; A plate member (5b) having a thickness in a plane portion that is equal to or greater than the diameter of the support portion of the support rod is placed between the silicon carbide single crystal substrate and the raw material and the growth surface of the silicon carbide single crystal substrate and A method for producing a silicon carbide single crystal, comprising arranging a silicon carbide single crystal so as to face a plane portion.
部の直径に対して少なくとも２倍以上となっているもの
を用いることを特徴とする請求項５に記載の炭化珪素単
結晶の製造方法。6. The silicon carbide single crystal according to claim 5, wherein a thickness of said plate member is at least twice as large as a diameter of a support portion of said support rod. Manufacturing method.
を特徴とする請求項１乃至６のいずれか１つに記載の炭
化珪素単結晶の製造方法。7. The method for producing a silicon carbide single crystal according to claim 1, wherein said plate member is made of homogeneous graphite.
を特徴とする請求項１乃至６のいずれか１つに記載の炭
化珪素単結晶の製造方法。8. The method of manufacturing a silicon carbide single crystal according to claim 1, wherein said plate member is made of porous graphite.
徴とする請求項１乃至８のいずれか１つに記載の炭化珪
素単結晶の製造方法。9. The method for producing a silicon carbide single crystal according to claim 1, wherein said plate member is formed in a circular shape.
珪素単結晶の原料（４）と、種結晶となる炭化珪素単結
晶基板（３）を配置し、前記原料を昇華させて前記炭化
珪素単結晶基板上に炭化珪素単結晶（１０）を成長させ
る炭化珪素単結晶製造装置において、 前記容器内において、前記炭化珪素単結晶基板が配置さ
れる部位と前記原料が配置される部位との間に、少なく
とも前記炭化珪素単結晶基板の直径以上の平面部を有す
る複数枚の板部材（５ａ）が、前記炭化珪素単結晶基板
の成長表面と前記平面部とが対向するように積層されて
配置されていることを特徴とする炭化珪素単結晶製造装
置。10. A silicon carbide single crystal raw material (4) to be grown and a silicon carbide single crystal substrate (3) serving as a seed crystal are arranged in vessels (1, 2), and the raw material is sublimated to In a silicon carbide single crystal manufacturing apparatus for growing a silicon carbide single crystal (10) on a silicon carbide single crystal substrate, a part where the silicon carbide single crystal substrate is arranged and a part where the raw material is arranged in the container. A plurality of plate members (5a) having at least a plane portion having a diameter equal to or greater than the diameter of the silicon carbide single crystal substrate are stacked so that the growth surface of the silicon carbide single crystal substrate and the plane portion face each other. An apparatus for producing a silicon carbide single crystal, wherein:
隙間を設けて配置され、該複数枚の板部材それぞれの外
周部に配置された支持部材（６）で前記複数枚の板部材
のそれぞれが支持されていることを特徴とする請求項１
０に記載の炭化珪素単結晶の製造装置。11. A support member (6) disposed between each of the plurality of plate members with a gap provided therebetween, and a support member (6) disposed on an outer peripheral portion of each of the plurality of plate members. 2. The method according to claim 1, wherein each is supported.
0. An apparatus for producing a silicon carbide single crystal according to 0.
珪素単結晶の原料（４）と、種結晶となる炭化珪素単結
晶基板（３）を配置し、前記原料を昇華させて前記炭化
珪素単結晶基板上に炭化珪素単結晶（１０）を成長させ
る炭化珪素単結晶製造装置において、 前記容器内において、前記炭化珪素単結晶基板が配置さ
れる部位と前記原料が配置される部位との間に、少なく
とも前記炭化珪素単結晶基板の直径以上の平面部を有す
ると共に前記原料の蒸気を通過させることができる貫通
孔が形成された板部材（５ｃ）が、前記炭化珪素単結晶
基板の成長表面と前記平面部とが対向するように配置さ
れていることを特徴とする炭化珪素単結晶の製造装置。12. A silicon carbide single crystal raw material (4) to be grown and a silicon carbide single crystal substrate (3) serving as a seed crystal are arranged in containers (1, 2), and the raw material is sublimated. In a silicon carbide single crystal manufacturing apparatus for growing a silicon carbide single crystal (10) on a silicon carbide single crystal substrate, a part where the silicon carbide single crystal substrate is arranged and a part where the raw material is arranged in the container. A plate member (5c) having at least a plane portion having a diameter equal to or larger than the diameter of the silicon carbide single crystal substrate and having a through hole through which the vapor of the raw material can pass is formed. An apparatus for manufacturing a silicon carbide single crystal, wherein a growth surface and said plane portion are arranged to face each other.
珪素単結晶の原料（４）と、種結晶となる炭化珪素単結
晶基板（３）を配置し、前記原料を昇華させて前記炭化
珪素単結晶基板上に炭化珪素単結晶（１０）を成長させ
る炭化珪素単結晶製造装置において、 前記容器内において、前記炭化珪素単結晶基板が配置さ
れる部位と前記原料が配置される部位との間に、支持棒
（７）にて、少なくとも前記炭化珪素単結晶基板の直径
以上の平面部を有すると共に該平面部における厚みが前
記支持棒の支持部分の直径以上となっている板部材（５
ｂ）が、前記炭化珪素単結晶基板の成長表面と前記平面
部とが対向するように配置されていることを特徴とする
炭化珪素単結晶の製造装置。13. A silicon carbide single crystal material (4) to be grown and a silicon carbide single crystal substrate (3) serving as a seed crystal are arranged in containers (1, 2), and the material is sublimated to form the silicon carbide single crystal substrate. In a silicon carbide single crystal manufacturing apparatus for growing a silicon carbide single crystal (10) on a silicon carbide single crystal substrate, a part where the silicon carbide single crystal substrate is arranged and a part where the raw material is arranged in the container. A plate member having at least a flat portion having a diameter equal to or greater than the diameter of the silicon carbide single crystal substrate and having a thickness at the flat portion equal to or greater than the diameter of the support portion of the support rod. 5
b), a silicon carbide single crystal manufacturing apparatus, wherein a growth surface of the silicon carbide single crystal substrate and the plane portion are arranged to face each other.
持部の直径に対して少なくとも２倍以上となっているこ
とを特徴とする請求項１３に記載の炭化珪素単結晶の製
造装置。14. The apparatus for producing a silicon carbide single crystal according to claim 13, wherein a thickness of said plate member is at least twice as large as a diameter of a support portion of said support rod. .
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| JP07829299A JP4089073B2 (en) | 1999-03-23 | 1999-03-23 | Silicon carbide single crystal manufacturing apparatus and silicon carbide single crystal manufacturing method |
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| JP07829299A JP4089073B2 (en) | 1999-03-23 | 1999-03-23 | Silicon carbide single crystal manufacturing apparatus and silicon carbide single crystal manufacturing method |
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|---|---|
| JP2000264795A true JP2000264795A (en) | 2000-09-26 |
| JP4089073B2 JP4089073B2 (en) | 2008-05-21 |
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| JP07829299A Expired - Lifetime JP4089073B2 (en) | 1999-03-23 | 1999-03-23 | Silicon carbide single crystal manufacturing apparatus and silicon carbide single crystal manufacturing method |
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