JP2000261096A - Ｄｂｒを用いた発光デバイス - Google Patents

Ｄｂｒを用いた発光デバイス

Info

Publication number
JP2000261096A
JP2000261096A JP2000055745A JP2000055745A JP2000261096A JP 2000261096 A JP2000261096 A JP 2000261096A JP 2000055745 A JP2000055745 A JP 2000055745A JP 2000055745 A JP2000055745 A JP 2000055745A JP 2000261096 A JP2000261096 A JP 2000261096A
Authority
JP
Japan
Prior art keywords
light
light emitting
substrate
layer stack
emitting layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2000055745A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000261096A5 (enExample
Inventor
Michael R T Tan
マイケル・アール・ティー・タン
Ai Babitsuku Daburafuko
ダブラフコ・アイ・バビック
Scott W Corzine
スコット・ダブリュ・コルジン
Tirmula R Ranganath
ティルムラ・アール・ランガナス
Shih-Yuan Wang
シー−ユアン・ウォン
Wayne Bi
ウエイン・ビー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agilent Technologies Inc
Original Assignee
Agilent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agilent Technologies Inc filed Critical Agilent Technologies Inc
Publication of JP2000261096A publication Critical patent/JP2000261096A/ja
Publication of JP2000261096A5 publication Critical patent/JP2000261096A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H01S5/426—Vertically stacked cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0215—Bonding to the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0215—Bonding to the substrate
    • H01S5/0216—Bonding to the substrate using an intermediate compound, e.g. a glue or solder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2000055745A 1999-03-05 2000-03-01 Ｄｂｒを用いた発光デバイス Withdrawn JP2000261096A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US263696 1999-03-05
US09/263,696 US6252896B1 (en) 1999-03-05 1999-03-05 Long-Wavelength VCSEL using buried bragg reflectors

Publications (2)

Publication Number Publication Date
JP2000261096A true JP2000261096A (ja) 2000-09-22
JP2000261096A5 JP2000261096A5 (enExample) 2006-08-24

Family

ID=23002879

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000055745A Withdrawn JP2000261096A (ja) 1999-03-05 2000-03-01 Ｄｂｒを用いた発光デバイス

Country Status (4)

Country Link
US (1) US6252896B1 (enExample)
EP (1) EP1037341B1 (enExample)
JP (1) JP2000261096A (enExample)
DE (1) DE60002387T2 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005101599A1 (en) * 2004-04-14 2005-10-27 Ricoh Company, Ltd. Vertical cavity surface emitting semiconductor laser, light emission device, and optical transmission system
JP2008147519A (ja) * 2006-12-12 2008-06-26 Hamamatsu Photonics Kk 半導体発光素子
JP2017505435A (ja) * 2014-01-15 2017-02-16 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツングＲｏｂｅｒｔ Ｂｏｓｃｈ Ｇｍｂｈ 集積マイクロメカニカル流体センサコンポーネントの製造方法、集積マイクロメカニカル流体センサコンポーネント、及び、集積マイクロメカニカル流体センサコンポーネントを用いた流体の識別方法
CN111740312A (zh) * 2020-06-28 2020-10-02 海南师范大学 一种双波长单片集成面发射半导体激光器
JP2024140216A (ja) * 2023-03-28 2024-10-10 キヤノン株式会社 発光装置、測距装置及び移動体

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US7286585B2 (en) * 1998-12-21 2007-10-23 Finisar Corporation Low temperature grown layers with migration enhanced epitaxy adjacent to an InGaAsN(Sb) based active region
US7095770B2 (en) 2001-12-20 2006-08-22 Finisar Corporation Vertical cavity surface emitting laser including indium, antimony and nitrogen in the active region
US6922426B2 (en) 2001-12-20 2005-07-26 Finisar Corporation Vertical cavity surface emitting laser including indium in the active region
US20030219917A1 (en) * 1998-12-21 2003-11-27 Johnson Ralph H. System and method using migration enhanced epitaxy for flattening active layers and the mechanical stabilization of quantum wells associated with vertical cavity surface emitting lasers
US6975660B2 (en) 2001-12-27 2005-12-13 Finisar Corporation Vertical cavity surface emitting laser including indium and antimony in the active region
US7408964B2 (en) 2001-12-20 2008-08-05 Finisar Corporation Vertical cavity surface emitting laser including indium and nitrogen in the active region
US7058112B2 (en) 2001-12-27 2006-06-06 Finisar Corporation Indium free vertical cavity surface emitting laser
US7167495B2 (en) * 1998-12-21 2007-01-23 Finisar Corporation Use of GaAs extended barrier layers between active regions containing nitrogen and AlGaAs confining layers
US7435660B2 (en) * 1998-12-21 2008-10-14 Finisar Corporation Migration enhanced epitaxy fabrication of active regions having quantum wells
US7257143B2 (en) * 1998-12-21 2007-08-14 Finisar Corporation Multicomponent barrier layers in quantum well active regions to enhance confinement and speed
US6891664B2 (en) 1999-03-22 2005-05-10 Finisar Corporation Multistage tunable gain optical amplifier
US6445495B1 (en) * 1999-03-22 2002-09-03 Genoa Corporation Tunable-gain lasing semiconductor optical amplifier
US6424669B1 (en) 1999-10-29 2002-07-23 E20 Communications, Inc. Integrated optically pumped vertical cavity surface emitting laser
AU2470301A (en) * 1999-10-29 2001-05-08 E20 Communications, Inc. Modulated integrated optically pumped vertical cavity surface emitting lasers
US6879615B2 (en) * 2000-01-19 2005-04-12 Joseph Reid Henrichs FCSEL that frequency doubles its output emissions using sum-frequency generation
US6936900B1 (en) 2000-05-04 2005-08-30 Osemi, Inc. Integrated transistor devices
US6573528B2 (en) * 2000-10-12 2003-06-03 Walter David Braddock Detector diode with internal calibration structure
US6434180B1 (en) * 2000-12-19 2002-08-13 Lucent Technologies Inc. Vertical cavity surface emitting laser (VCSEL)
US6556610B1 (en) 2001-04-12 2003-04-29 E20 Communications, Inc. Semiconductor lasers
DE10134825A1 (de) * 2001-06-20 2003-01-09 Infineon Technologies Ag Photonen-Emitter und Datenübertragungsvorrichtung
WO2003001636A1 (de) 2001-06-20 2003-01-03 Infineon Technologies Ag Photonen-emitter und datenübertragungsvorrichtung
US6717964B2 (en) 2001-07-02 2004-04-06 E20 Communications, Inc. Method and apparatus for wavelength tuning of optically pumped vertical cavity surface emitting lasers
US6647050B2 (en) * 2001-09-18 2003-11-11 Agilent Technologies, Inc. Flip-chip assembly for optically-pumped lasers
FR2833758B1 (fr) * 2001-12-13 2004-12-10 Commissariat Energie Atomique Dispositif d'emission de lumiere a micro-cavite et procede de fabrication de ce dispositif
US6891865B1 (en) * 2002-02-15 2005-05-10 Afonics Fibreoptics, Ltd. Wavelength tunable laser
US6822995B2 (en) * 2002-02-21 2004-11-23 Finisar Corporation GaAs/AI(Ga)As distributed bragg reflector on InP
US7295586B2 (en) * 2002-02-21 2007-11-13 Finisar Corporation Carbon doped GaAsSb suitable for use in tunnel junctions of long-wavelength VCSELs
US6989556B2 (en) * 2002-06-06 2006-01-24 Osemi, Inc. Metal oxide compound semiconductor integrated transistor devices with a gate insulator structure
US7187045B2 (en) * 2002-07-16 2007-03-06 Osemi, Inc. Junction field effect metal oxide compound semiconductor integrated transistor devices
JP2004207480A (ja) * 2002-12-25 2004-07-22 Pioneer Electronic Corp 半導体レーザ装置及びその製造方法
KR101180166B1 (ko) * 2003-11-13 2012-09-05 오스람 옵토 세미컨덕터스 게엠베하 반도체 레이저 장치
US20070138506A1 (en) * 2003-11-17 2007-06-21 Braddock Walter D Nitride metal oxide semiconductor integrated transistor devices
WO2005061756A1 (en) * 2003-12-09 2005-07-07 Osemi, Inc. High temperature vacuum evaporation apparatus
US6947466B2 (en) * 2004-01-29 2005-09-20 Coherent, Inc. Optically pumped edge-emitting semiconductor laser
DE102004004781A1 (de) * 2004-01-30 2005-08-18 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement
FR2867900A1 (fr) * 2004-03-16 2005-09-23 Commissariat Energie Atomique Dispositif d'emission de lumiere avec une structure emettrice a micro-cavite et une diode de pompe a cavite verticale et procede de fabrication
FR2870051B1 (fr) * 2004-05-04 2009-04-03 Commissariat Energie Atomique Emetteur de rayonnement avec faisceau de pompage incline
US7372886B2 (en) * 2004-06-07 2008-05-13 Avago Technologies Fiber Ip Pte Ltd High thermal conductivity vertical cavity surface emitting laser (VCSEL)
WO2006039341A2 (en) 2004-10-01 2006-04-13 Finisar Corporation Vertical cavity surface emitting laser having multiple top-side contacts
US7860137B2 (en) 2004-10-01 2010-12-28 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
US7402831B2 (en) * 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
US7745814B2 (en) * 2004-12-09 2010-06-29 3M Innovative Properties Company Polychromatic LED's and related semiconductor devices
US7719015B2 (en) * 2004-12-09 2010-05-18 3M Innovative Properties Company Type II broadband or polychromatic LED's
US7453629B2 (en) * 2005-12-29 2008-11-18 Lucent Technologies Inc. Semiconductor optical amplifier pulse reshaper
US7433374B2 (en) * 2006-12-21 2008-10-07 Coherent, Inc. Frequency-doubled edge-emitting semiconductor lasers
CN101897038B (zh) * 2007-12-10 2012-08-29 3M创新有限公司 波长转换发光二极管及其制造方法
DE102008048903B4 (de) * 2008-09-25 2021-06-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauteil
SE534345C2 (sv) * 2009-09-24 2011-07-19 Svedice Ab Fotodiod av typen lavinfotodiod.

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JP2576692B2 (ja) * 1993-07-14 1997-01-29 日本電気株式会社 波長多重用光デバイスの製造方法
US5363390A (en) * 1993-11-22 1994-11-08 Hewlett-Packard Company Semiconductor laser that generates second harmonic light by means of a nonlinear crystal in the laser cavity
US5513204A (en) 1995-04-12 1996-04-30 Optical Concepts, Inc. Long wavelength, vertical cavity surface emitting laser with vertically integrated optical pump
DE19523267A1 (de) * 1995-06-27 1997-01-02 Bosch Gmbh Robert Lasermodul
US5754578A (en) 1996-06-24 1998-05-19 W. L. Gore & Associates, Inc. 1250-1650 nm vertical cavity surface emitting laser pumped by a 700-1050 nm vertical cavity surface emitting laser
FR2751796B1 (fr) * 1996-07-26 1998-08-28 Commissariat Energie Atomique Microlaser soilde, a pompage optique par laser semi-conducteur a cavite verticale

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005101599A1 (en) * 2004-04-14 2005-10-27 Ricoh Company, Ltd. Vertical cavity surface emitting semiconductor laser, light emission device, and optical transmission system
JP2005303113A (ja) * 2004-04-14 2005-10-27 Ricoh Co Ltd 垂直共振器型面発光半導体レーザ素子および発光装置および光伝送システム
US7376164B2 (en) 2004-04-14 2008-05-20 Ricoh Company, Ltd. Vertical cavity surface emitting semiconductor laser, light emission device, and optical transmission system
JP2008147519A (ja) * 2006-12-12 2008-06-26 Hamamatsu Photonics Kk 半導体発光素子
JP2017505435A (ja) * 2014-01-15 2017-02-16 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツングＲｏｂｅｒｔ Ｂｏｓｃｈ Ｇｍｂｈ 集積マイクロメカニカル流体センサコンポーネントの製造方法、集積マイクロメカニカル流体センサコンポーネント、及び、集積マイクロメカニカル流体センサコンポーネントを用いた流体の識別方法
US9816920B2 (en) 2014-01-15 2017-11-14 Robert Bosch Gmbh Method for producing an integrated micromechanical fluid sensor component, integrated micromechanical fluid sensor component and method for detecting a fluid by means of an integrated micromechanical fluid sensor component
CN111740312A (zh) * 2020-06-28 2020-10-02 海南师范大学 一种双波长单片集成面发射半导体激光器
JP2024140216A (ja) * 2023-03-28 2024-10-10 キヤノン株式会社 発光装置、測距装置及び移動体
JP7663620B2 (ja) 2023-03-28 2025-04-16 キヤノン株式会社 発光装置、測距装置及び移動体

Also Published As

Publication number Publication date
US6252896B1 (en) 2001-06-26
EP1037341B1 (en) 2003-05-02
DE60002387T2 (de) 2004-02-12
EP1037341A3 (en) 2001-09-05
DE60002387D1 (de) 2003-06-05
EP1037341A2 (en) 2000-09-20

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