JP2000252512A - Ｐｉｎフォトダイオード - Google Patents

Ｐｉｎフォトダイオード

Info

Publication number
JP2000252512A
JP2000252512A JP11048920A JP4892099A JP2000252512A JP 2000252512 A JP2000252512 A JP 2000252512A JP 11048920 A JP11048920 A JP 11048920A JP 4892099 A JP4892099 A JP 4892099A JP 2000252512 A JP2000252512 A JP 2000252512A
Authority
JP
Japan
Prior art keywords
semiconductor substrate
type impurity
impurity region
resistance
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11048920A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000252512A5 (enExample
Inventor
Keiji Sato
恵二 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SII R&D Center Inc
Original Assignee
SII R&D Center Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SII R&D Center Inc filed Critical SII R&D Center Inc
Priority to JP11048920A priority Critical patent/JP2000252512A/ja
Publication of JP2000252512A publication Critical patent/JP2000252512A/ja
Publication of JP2000252512A5 publication Critical patent/JP2000252512A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Electroluminescent Light Sources (AREA)
  • Light Receiving Elements (AREA)
JP11048920A 1999-02-25 1999-02-25 Ｐｉｎフォトダイオード Pending JP2000252512A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11048920A JP2000252512A (ja) 1999-02-25 1999-02-25 Ｐｉｎフォトダイオード

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11048920A JP2000252512A (ja) 1999-02-25 1999-02-25 Ｐｉｎフォトダイオード

Publications (2)

Publication Number Publication Date
JP2000252512A true JP2000252512A (ja) 2000-09-14
JP2000252512A5 JP2000252512A5 (enExample) 2005-11-24

Family

ID=12816700

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11048920A Pending JP2000252512A (ja) 1999-02-25 1999-02-25 Ｐｉｎフォトダイオード

Country Status (1)

Country Link
JP (1) JP2000252512A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006128592A (ja) * 2004-10-28 2006-05-18 Samsung Electro Mech Co Ltd 多波長受光素子及びその製造方法
US20090195948A1 (en) * 2006-02-01 2009-08-06 Edvard Kalvesten Methods for making a starting substrate wafer for semiconductor engineering having wafer through connections
WO2010047058A1 (ja) * 2008-10-22 2010-04-29 パナソニック株式会社 光半導体装置
EP2013915A4 (en) * 2006-04-19 2011-08-03 Perkinelmer Canada Inc AVALANCHE FOTODIODE WITH BONDED WAFER AND MANUFACTURING METHOD THEREFOR
US8368159B2 (en) 2011-07-08 2013-02-05 Excelitas Canada, Inc. Photon counting UV-APD
JP2023552371A (ja) * 2020-12-04 2023-12-15 ヴィシャイ セミコンダクター ゲゼルシャフト ミット ベシュレンクテル ハフツング フォトダイオードの製造方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006128592A (ja) * 2004-10-28 2006-05-18 Samsung Electro Mech Co Ltd 多波長受光素子及びその製造方法
US20090195948A1 (en) * 2006-02-01 2009-08-06 Edvard Kalvesten Methods for making a starting substrate wafer for semiconductor engineering having wafer through connections
US9312217B2 (en) * 2006-02-01 2016-04-12 Silex Microsystems Ab Methods for making a starting substrate wafer for semiconductor engineering having wafer through connections
EP2013915A4 (en) * 2006-04-19 2011-08-03 Perkinelmer Canada Inc AVALANCHE FOTODIODE WITH BONDED WAFER AND MANUFACTURING METHOD THEREFOR
WO2010047058A1 (ja) * 2008-10-22 2010-04-29 パナソニック株式会社 光半導体装置
US8368159B2 (en) 2011-07-08 2013-02-05 Excelitas Canada, Inc. Photon counting UV-APD
JP2023552371A (ja) * 2020-12-04 2023-12-15 ヴィシャイ セミコンダクター ゲゼルシャフト ミット ベシュレンクテル ハフツング フォトダイオードの製造方法
US20240105878A1 (en) * 2020-12-04 2024-03-28 Vishay Semiconductor Gmbh Method for producing a photodiode

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