JP2000252512A - Ｐｉｎフォトダイオード - Google Patents

Ｐｉｎフォトダイオード

Info

Publication number
JP2000252512A
JP2000252512A JP11048920A JP4892099A JP2000252512A JP 2000252512 A JP2000252512 A JP 2000252512A JP 11048920 A JP11048920 A JP 11048920A JP 4892099 A JP4892099 A JP 4892099A JP 2000252512 A JP2000252512 A JP 2000252512A
Authority
JP
Japan
Prior art keywords
semiconductor substrate
type impurity
impurity region
resistance
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11048920A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000252512A5 (enrdf_load_stackoverflow
Inventor
Keiji Sato
恵二 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SII R&D Center Inc
Original Assignee
SII R&D Center Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SII R&D Center Inc filed Critical SII R&D Center Inc
Priority to JP11048920A priority Critical patent/JP2000252512A/ja
Publication of JP2000252512A publication Critical patent/JP2000252512A/ja
Publication of JP2000252512A5 publication Critical patent/JP2000252512A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Electroluminescent Light Sources (AREA)
  • Light Receiving Elements (AREA)
JP11048920A 1999-02-25 1999-02-25 Ｐｉｎフォトダイオード Pending JP2000252512A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11048920A JP2000252512A (ja) 1999-02-25 1999-02-25 Ｐｉｎフォトダイオード

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11048920A JP2000252512A (ja) 1999-02-25 1999-02-25 Ｐｉｎフォトダイオード

Publications (2)

Publication Number Publication Date
JP2000252512A true JP2000252512A (ja) 2000-09-14
JP2000252512A5 JP2000252512A5 (enrdf_load_stackoverflow) 2005-11-24

Family

ID=12816700

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11048920A Pending JP2000252512A (ja) 1999-02-25 1999-02-25 Ｐｉｎフォトダイオード

Country Status (1)

Country Link
JP (1) JP2000252512A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006128592A (ja) * 2004-10-28 2006-05-18 Samsung Electro Mech Co Ltd 多波長受光素子及びその製造方法
US20090195948A1 (en) * 2006-02-01 2009-08-06 Edvard Kalvesten Methods for making a starting substrate wafer for semiconductor engineering having wafer through connections
WO2010047058A1 (ja) * 2008-10-22 2010-04-29 パナソニック株式会社 光半導体装置
EP2013915A4 (en) * 2006-04-19 2011-08-03 Perkinelmer Canada Inc AVALANCHE FOTODIODE WITH BONDED WAFER AND MANUFACTURING METHOD THEREFOR
US8368159B2 (en) 2011-07-08 2013-02-05 Excelitas Canada, Inc. Photon counting UV-APD
JP2023552371A (ja) * 2020-12-04 2023-12-15 ヴィシャイ セミコンダクター ゲゼルシャフト ミット ベシュレンクテル ハフツング フォトダイオードの製造方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006128592A (ja) * 2004-10-28 2006-05-18 Samsung Electro Mech Co Ltd 多波長受光素子及びその製造方法
US20090195948A1 (en) * 2006-02-01 2009-08-06 Edvard Kalvesten Methods for making a starting substrate wafer for semiconductor engineering having wafer through connections
US9312217B2 (en) * 2006-02-01 2016-04-12 Silex Microsystems Ab Methods for making a starting substrate wafer for semiconductor engineering having wafer through connections
EP2013915A4 (en) * 2006-04-19 2011-08-03 Perkinelmer Canada Inc AVALANCHE FOTODIODE WITH BONDED WAFER AND MANUFACTURING METHOD THEREFOR
WO2010047058A1 (ja) * 2008-10-22 2010-04-29 パナソニック株式会社 光半導体装置
US8368159B2 (en) 2011-07-08 2013-02-05 Excelitas Canada, Inc. Photon counting UV-APD
JP2023552371A (ja) * 2020-12-04 2023-12-15 ヴィシャイ セミコンダクター ゲゼルシャフト ミット ベシュレンクテル ハフツング フォトダイオードの製造方法
US20240105878A1 (en) * 2020-12-04 2024-03-28 Vishay Semiconductor Gmbh Method for producing a photodiode

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