JP2000243974A5 - - Google Patents
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- Publication number
- JP2000243974A5 JP2000243974A5 JP1999366281A JP36628199A JP2000243974A5 JP 2000243974 A5 JP2000243974 A5 JP 2000243974A5 JP 1999366281 A JP1999366281 A JP 1999366281A JP 36628199 A JP36628199 A JP 36628199A JP 2000243974 A5 JP2000243974 A5 JP 2000243974A5
- Authority
- JP
- Japan
- Prior art keywords
- gate insulating
- insulating film
- semiconductor device
- boron element
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 description 37
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 23
- 229910052796 boron Inorganic materials 0.000 description 23
- 229910052581 Si3N4 Inorganic materials 0.000 description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 239000000758 substrate Substances 0.000 description 7
- 239000007789 gas Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP36628199A JP4597295B2 (ja) | 1998-12-25 | 1999-12-24 | 半導体装置およびその作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP37017098 | 1998-12-25 | ||
| JP10-370170 | 1998-12-25 | ||
| JP36628199A JP4597295B2 (ja) | 1998-12-25 | 1999-12-24 | 半導体装置およびその作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000243974A JP2000243974A (ja) | 2000-09-08 |
| JP2000243974A5 true JP2000243974A5 (enrdf_load_stackoverflow) | 2007-05-10 |
| JP4597295B2 JP4597295B2 (ja) | 2010-12-15 |
Family
ID=26581766
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP36628199A Expired - Lifetime JP4597295B2 (ja) | 1998-12-25 | 1999-12-24 | 半導体装置およびその作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4597295B2 (enrdf_load_stackoverflow) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG148819A1 (en) * | 2000-09-14 | 2009-01-29 | Semiconductor Energy Lab | Semiconductor device and manufacturing method thereof |
| US6509616B2 (en) * | 2000-09-29 | 2003-01-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and its manufacturing method |
| JP3643067B2 (ja) | 2001-10-11 | 2005-04-27 | 株式会社半導体エネルギー研究所 | 半導体表示装置の設計方法 |
| CN101714546B (zh) | 2008-10-03 | 2014-05-14 | 株式会社半导体能源研究所 | 显示装置及其制造方法 |
| KR101882350B1 (ko) * | 2009-10-09 | 2018-07-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2903134B2 (ja) * | 1990-11-10 | 1999-06-07 | 株式会社 半導体エネルギー研究所 | 半導体装置 |
| JPH0818053A (ja) * | 1994-06-28 | 1996-01-19 | Mitsubishi Electric Corp | 薄膜トランジスタ及びその製造方法 |
| JP3420653B2 (ja) * | 1995-03-16 | 2003-06-30 | 株式会社東芝 | 薄膜トランジスタおよび液晶表示素子 |
-
1999
- 1999-12-24 JP JP36628199A patent/JP4597295B2/ja not_active Expired - Lifetime
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