JP2000236074A - 半導体集積回路装置およびその製造方法 - Google Patents
半導体集積回路装置およびその製造方法Info
- Publication number
- JP2000236074A JP2000236074A JP11309114A JP30911499A JP2000236074A JP 2000236074 A JP2000236074 A JP 2000236074A JP 11309114 A JP11309114 A JP 11309114A JP 30911499 A JP30911499 A JP 30911499A JP 2000236074 A JP2000236074 A JP 2000236074A
- Authority
- JP
- Japan
- Prior art keywords
- memory cell
- semiconductor
- concentration
- mis transistor
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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- 150000002500 ions Chemical class 0.000 claims description 120
- 238000000034 method Methods 0.000 claims description 113
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- 230000002093 peripheral effect Effects 0.000 claims description 35
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 26
- 125000006850 spacer group Chemical group 0.000 claims description 21
- 238000005468 ion implantation Methods 0.000 claims description 18
- 229910052731 fluorine Inorganic materials 0.000 claims description 14
- 239000011737 fluorine Substances 0.000 claims description 14
- 229910052757 nitrogen Inorganic materials 0.000 claims description 14
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- -1 boron ions Chemical class 0.000 claims description 13
- 239000004020 conductor Substances 0.000 claims description 13
- 238000002513 implantation Methods 0.000 claims description 13
- 229910052785 arsenic Inorganic materials 0.000 claims description 12
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 11
- 229910052796 boron Inorganic materials 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 11
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 7
- 239000002344 surface layer Substances 0.000 claims description 7
- 239000012298 atmosphere Substances 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 6
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 3
- 230000005684 electric field Effects 0.000 description 45
- 239000010410 layer Substances 0.000 description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 27
- 229910052814 silicon oxide Inorganic materials 0.000 description 27
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 23
- 229920002120 photoresistant polymer Polymers 0.000 description 22
- 230000001133 acceleration Effects 0.000 description 21
- 239000011229 interlayer Substances 0.000 description 20
- 229910052581 Si3N4 Inorganic materials 0.000 description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 16
- 239000011347 resin Substances 0.000 description 13
- 229920005989 resin Polymers 0.000 description 13
- 238000009826 distribution Methods 0.000 description 12
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 9
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- 230000000694 effects Effects 0.000 description 6
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- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 6
- 229910021342 tungsten silicide Inorganic materials 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
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- 230000007547 defect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
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- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 241001212789 Dynamis Species 0.000 description 1
- 101100293260 Homo sapiens NAA15 gene Proteins 0.000 description 1
- 101001135826 Homo sapiens Serine/threonine-protein phosphatase 2A activator Proteins 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 241000272168 Laridae Species 0.000 description 1
- 102100026781 N-alpha-acetyltransferase 15, NatA auxiliary subunit Human genes 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 101000621511 Potato virus M (strain German) RNA silencing suppressor Proteins 0.000 description 1
- 101710204573 Protein phosphatase PP2A regulatory subunit B Proteins 0.000 description 1
- 102100036782 Serine/threonine-protein phosphatase 2A activator Human genes 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000009841 combustion method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
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- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11309114A JP2000236074A (ja) | 1998-12-17 | 1999-10-29 | 半導体集積回路装置およびその製造方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10-359842 | 1998-12-17 | ||
| JP35984298 | 1998-12-17 | ||
| JP11309114A JP2000236074A (ja) | 1998-12-17 | 1999-10-29 | 半導体集積回路装置およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000236074A true JP2000236074A (ja) | 2000-08-29 |
| JP2000236074A5 JP2000236074A5 (fr) | 2004-11-04 |
Family
ID=26565834
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11309114A Pending JP2000236074A (ja) | 1998-12-17 | 1999-10-29 | 半導体集積回路装置およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000236074A (fr) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002100746A (ja) * | 2000-09-21 | 2002-04-05 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
| JP2006073981A (ja) * | 2004-09-02 | 2006-03-16 | Hynix Semiconductor Inc | 半導体素子のセルチャンネルイオン注入方法 |
| JP2006165504A (ja) * | 2004-12-03 | 2006-06-22 | Hynix Semiconductor Inc | ゲートリセス構造及びその形成方法 |
| US7247890B2 (en) | 2003-11-10 | 2007-07-24 | Hitachi, Ltd. | Semiconductor device and manufacturing method thereof |
| JP2008235330A (ja) * | 2007-03-16 | 2008-10-02 | Elpida Memory Inc | 半導体装置の製造方法 |
| US7994012B2 (en) | 2008-08-01 | 2011-08-09 | Renesas Electronics Corporation | Semiconductor device and a method of manufacturing the same |
| WO2014126201A1 (fr) * | 2013-02-15 | 2014-08-21 | ピーエスフォー ルクスコ エスエイアールエル | Dispositif semi-conducteur |
| JP2019195028A (ja) * | 2018-05-02 | 2019-11-07 | 株式会社半導体エネルギー研究所 | 記憶装置 |
-
1999
- 1999-10-29 JP JP11309114A patent/JP2000236074A/ja active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002100746A (ja) * | 2000-09-21 | 2002-04-05 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
| US7247890B2 (en) | 2003-11-10 | 2007-07-24 | Hitachi, Ltd. | Semiconductor device and manufacturing method thereof |
| KR101062491B1 (ko) | 2003-11-10 | 2011-09-05 | 가부시키가이샤 히타치세이사쿠쇼 | 반도체 장치 및 반도체 장치의 제조 방법 |
| JP2006073981A (ja) * | 2004-09-02 | 2006-03-16 | Hynix Semiconductor Inc | 半導体素子のセルチャンネルイオン注入方法 |
| JP2006165504A (ja) * | 2004-12-03 | 2006-06-22 | Hynix Semiconductor Inc | ゲートリセス構造及びその形成方法 |
| JP2008235330A (ja) * | 2007-03-16 | 2008-10-02 | Elpida Memory Inc | 半導体装置の製造方法 |
| US7994012B2 (en) | 2008-08-01 | 2011-08-09 | Renesas Electronics Corporation | Semiconductor device and a method of manufacturing the same |
| WO2014126201A1 (fr) * | 2013-02-15 | 2014-08-21 | ピーエスフォー ルクスコ エスエイアールエル | Dispositif semi-conducteur |
| US9461053B2 (en) | 2013-02-15 | 2016-10-04 | Ps4 Luxco S.A.R.L. | Semiconductor device |
| JP2019195028A (ja) * | 2018-05-02 | 2019-11-07 | 株式会社半導体エネルギー研究所 | 記憶装置 |
| JP7171226B2 (ja) | 2018-05-02 | 2022-11-15 | 株式会社半導体エネルギー研究所 | 記憶装置 |
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Legal Events
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| A977 | Report on retrieval |
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