JP2000208178A - Semiconductor application device and its production - Google Patents

Abstract

PROBLEM TO BE SOLVED: To ensure the space between first and second substrates in a groove part between mutually adjacent first terminal electrodes larger than the space between mutually opposed first and second terminal electrodes and satisfactorily keep the insulating property of an anisotropic conductive film between the adjacent first terminal electrodes at low cost by forming each groove between the first terminal electrodes of a first substrate. SOLUTION: A strip anisotropic conductive film 16 is arranged across a groove 15 on a terminal electrode 12, and the terminal electrode 2 of a liquid crystal panel is opposed and bonded to the terminal electrode 12 of a drive circuit substrate through the anisotropic conductive film 16. As a conductive particle 17 included in the anisotropic conductive film 16, those having a diameter of 2-3 μm are used, the depth of the groove 15 is set to 20 μm, and the terminal electrodes 2, 12 are conducted through the conductive particle 17. The state where the conductive particles 17 are present separately by the groove 15 can be kept between the adjacent terminal electrodes 2, 12, and a satisfactory insulated state can be thus kept. Accordingly, the space between the terminal electrodes can be reduced at a low cost to miniaturize the device.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, such as a liquid crystal display device, on which a semiconductor element is mounted.

[0002]

2. Description of the Related Art In recent years, semiconductor elements have become very highly integrated and miniaturized, contributing to space saving of semiconductor applied devices. However, as a semiconductor application device, the technology for mounting a semiconductor element is a bottleneck, and the space for the mounting part cannot be sufficiently reduced. Under such circumstances, element technologies for directly mounting a semiconductor element on a product have been actively developed for cost reduction and space saving. Particularly, in a liquid crystal display device, a COG (chip on glass) method (Kaz) in which a semiconductor element is directly mounted on a glass substrate.
unari Tanaka Technical Report of the Institute of Image Information and Television Engineers, January 1998, IDY98-40 p81-86)
Further, development of a GOG (glass on glass) method for mounting a semiconductor element on glass to a terminal on glass has been advanced. However, also regarding these,
It becomes more difficult as the terminal spacing becomes smaller, and there are still many issues.

In these mounting techniques, an anisotropic conductive film (ACFAnisotropi) is usually used for connection between terminals.
c Conductive Film) is often used. The connection by the anisotropic conductive film is usually performed by connecting a terminal on a glass substrate to a flexible printed circuit (FPC).
d Circuit or TCP (Tape Carr)
er Package) and the like. In the mounting using this anisotropic conductive film, the terminal electrode 103a formed on one substrate and the terminal electrode 103b formed on the other substrate are connected as shown in FIG. That is, the terminal electrode 103 a and the terminal electrode 1
03b, the distance between the conductive particles 1 is set smaller than the diameter of the conductive particles 102 in the anisotropic conductive film 101.
02 is squashed to achieve continuity, and the adjacent terminal electrodes 10
3a and between the terminal electrodes 103b, the distance between the conductive particles 102 is set to be larger than the diameter of the conductive particles 102.
Are insulated so that they do not touch each other.

As described above, in the mounting method using the anisotropic conductive film, the opposing terminal electrode 103a and terminal electrode 103
b, the conduction between the terminals is obtained through the conductive particles 102 in the anisotropic conductive film 101 sandwiched between the terminals, and between the adjacent terminal electrodes 103a and 103b.
In between, the conductive particles 102 are insulated so as to be separated from each other.

However, in the GOG technique, the terminal electrode 103
The thickness of a and b themselves is as thin as about 100 to 500 nm, and sometimes the terminal electrode portion is formed so as to be lower than the surroundings. The connection principle using the anisotropic conductive film described with reference to FIG. It is difficult to obtain a good contact between the terminal electrodes by using this. For example, when the anisotropic conductive film 101 or the like is used in the GOG mounting, FIG.
As shown in FIG. 3B, the terminal electrodes 103a and 103
The conductive particles 102 may be crushed both between the terminal electrodes 3b and between the adjacent terminal electrodes 103b, resulting in a short circuit between the terminal electrodes to be insulated. Further, as the distance between adjacent terminal electrodes becomes smaller, the probability of short-circuiting due to the conductive particles 102 increases.

Therefore, various methods have been proposed in order to improve the above-mentioned problems in the GOG mounting. FIG.
4A and FIG. 24B show an example of the bump 10
5 shows a method using No. 5. In this method, for example, a bump 105 is formed on all the terminal electrodes 103a using a wire bonder used for mounting a semiconductor element.
By narrowing the space between the bump 105 and the terminal electrode 103b, the conductive particles 102 located therebetween are crushed and brought into contact. The bumps 105 may be formed by plating or the like. Alternatively, a method of performing photolithography such that conductive particles remain only on the terminal electrodes has been devised. 25A and 25B show the COG method and the GOG method, respectively.
1 shows a schematic view of the entire liquid crystal display device using the method. Some I
C and power supply wiring are mounted by FPC or TCP.

[0007]

However, in the method of mounting by mounting bumps, it is difficult to reduce the thickness because the bumps are formed. Also,
The method using a wire bonder in the GOG method has a problem that the cost per panel increases and the throughput deteriorates in the case of a semiconductor element for driving a liquid crystal having an extremely large number of mounting terminals. In addition, there is a limit in reducing the size of the bump, and thus there is a limit in increasing the density.
In the method of forming bumps by plating, FIG.
As shown in FIGS. 26A and 26B, when the size of the semiconductor element is increased to a certain degree or more, when the bump 105 is formed to have a required film thickness, the film thickness becomes non-uniform. There has been a problem that a force is not evenly applied to the conductive film 101 and a conduction failure occurs depending on a place. Even when photolithography is used, there is a problem that if the distance between the terminals is short, the conductive particles remain between the terminals and a defect occurs if only the phenomenon treatment is performed. For this reason, it was difficult to mount them at a sufficiently high density.

Therefore, the present invention solves the above-mentioned problems in the conventional mounting method, and provides a small and thin semiconductor device which can be manufactured at high throughput and at low cost, and a method of manufacturing the same. The purpose is to:

[0009]

SUMMARY OF THE INVENTION The present invention has been made to achieve the above-mentioned object. That is, the semiconductor application device according to the present invention includes a first substrate having a plurality of first terminal electrodes and a second substrate having a plurality of second terminal electrodes formed so as to respectively correspond to the first terminal electrodes. A second substrate, wherein the first terminal electrode and the second terminal electrode are bonded to each other with an anisotropic conductive film facing each other. A groove is formed between each of the first terminal electrodes. With this configuration, the distance between the first terminal electrode and the second terminal electrode opposed to each other causes the first substrate and the second substrate in a groove portion between the first terminal electrodes adjacent to each other. The distance between the board and the
The insulating properties of the anisotropic conductive film located between the first terminal electrodes adjacent to each other (between the second electrodes adjacent to each other) can be favorably maintained.

In the semiconductor application device according to the present invention,
To connect between high-density wiring and high-density terminals,
The interval between the first terminal electrodes may be set to 50 μm or less.

Further, in the semiconductor device according to the present invention, the number of terminals of the first terminal electrode may be 100 or more.

Further, in the semiconductor device according to the present invention,
In order to reduce the variation in the thickness of the terminal electrodes, the first
It is preferable that the thickness of each of the second terminal electrode and the second terminal electrode is 1 μm or less.

Further, in the semiconductor application device according to the present invention, the insulating properties of the anisotropic conductive film located between the first terminal electrodes adjacent to each other (between the second electrodes adjacent to each other) are improved. In order to maintain good, it is preferable that the depth of the groove is larger than the diameter of the conductive particles contained in the anisotropic conductive film, and the width of the groove is at least twice the diameter of the conductive particle.

In the semiconductor device according to the present invention,
The depth and width of the groove may be 5 μm or more. With this configuration, when the generally used anisotropic conductive film containing conductive particles having a size of 2 to 3 μm is used, the first terminal electrodes adjacent to each other (the second terminal electrodes adjacent to each other) are used. The insulating properties of the anisotropic conductive film located between the electrodes can be favorably maintained.

Further, in the semiconductor device according to the present invention,
At least one of the first and second substrates can be a transparent insulating substrate. Therefore, for example, it can be applied to a display device such as a liquid crystal display panel.

Further, in the semiconductor application device according to the present invention, at least a portion of the portion where the first substrate and the second substrate are opposed to each other and where the anisotropic conductive film is not formed, It is preferable to form a resin film having substantially the same size as the conductive particles contained in the anisotropic conductive film and including a non-conductive spacer, whereby the first substrate and the second substrate are formed. The substrate and the substrate can be substantially parallel to each other.

Further, in the semiconductor application device according to the present invention,
When the first terminal electrode is formed on the first substrate via an insulating film having a thickness of 1 μm or more, the insulating film located between the first terminal electrodes is removed by removing the groove. Alternatively, it may be formed. In this way, the formation of the groove can be relatively easily performed.

Further, in the semiconductor device according to the present invention, one of the first and second substrates can be a silicon substrate.

Further, the first aspect of the semiconductor application apparatus according to the present invention is as follows.
The manufacturing method according to the above, comprising: a first substrate having a plurality of first terminal electrodes; and a second substrate having a plurality of second terminal electrodes formed to correspond to the first terminal electrodes. First
A method of manufacturing a semiconductor device, comprising: joining a terminal electrode and a second terminal electrode so as to face each other via an anisotropic conductive film. A groove forming step of forming a groove between the first terminal electrodes on the substrate. This way,
A semiconductor device having a groove formed between the first terminal electrodes adjacent to each other on the first substrate can be manufactured.

Further, the first aspect of the semiconductor application apparatus according to the present invention is as follows.
In the manufacturing method of (1), when the first substrate is a substrate made of glass, quartz or silicon, the groove forming step includes an etching step of etching the first substrate using a solution containing hydrofluoric acid. Thereby, a groove can be easily formed.

Further, the first aspect of the semiconductor application apparatus according to the present invention is as follows.
In the manufacturing method of (1), when the first substrate is a substrate made of glass, quartz or silicon, the groove forming step includes a step of etching the first substrate by dry etching to form the groove. You may do so. With this configuration, a groove having a predetermined shape can be formed with high accuracy.

Further, the first aspect of the semiconductor application apparatus according to the present invention is as follows.
In the manufacturing method of (1), when the first terminal electrode is formed on the first substrate via an insulating film having a thickness of 1 μm or more, the groove forming step includes the step of forming the first terminal A step of forming a groove by etching and removing the insulating film located between the electrodes may be employed. By doing so, the groove can be formed relatively easily.

In the above manufacturing method, the insulating film may be formed of a photosensitive resin, and the groove forming step may include exposing and developing the insulating film made of the photosensitive resin. By doing so, the groove can be formed more easily.

Further, the first aspect of the semiconductor application apparatus according to the present invention
In the manufacturing method, the first terminal electrode is formed by forming an electrode layer for forming the first terminal electrode, and then forming an electrode forming mask of a predetermined shape on the electrode layer. Is formed by etching
In the groove forming step, it is preferable that the groove is formed by etching between the first terminal electrodes using the electrode forming mask.

Further, in the first method for manufacturing a semiconductor device according to the present invention, in the groove forming step, a resist is formed in a portion other than the groove, and a groove is formed by etching using the resist as a mask. can do.

Further, in the first method for manufacturing a semiconductor application device according to the present invention, in the groove forming step, a groove can be formed by etching using the first terminal electrode as a mask.

The second aspect of the semiconductor application apparatus according to the present invention
The manufacturing method according to the above, comprising: a first substrate having a plurality of first terminal electrodes; and a second substrate having a plurality of second terminal electrodes formed to correspond to the first terminal electrodes. First
And bonding the second terminal electrode and the second terminal electrode so as to face each other via an anisotropic conductive film, wherein the first terminal conductor and the first terminal conductor are connected to each other.
A protective film forming step of forming a continuous protective film between the first terminal electrodes, having a first opening on the first terminal electrode, and having a second opening between the first terminal electrodes Forming a resist having a predetermined shape on the protective film; forming a contact hole on the first terminal electrode by removing the protective film through the first opening; An etching step of removing the protective film through the second opening to form a groove between the first terminal electrodes. With this configuration, it is possible to manufacture a semiconductor applied device in which a groove is formed between the first terminal electrodes adjacent to each other on the first substrate without adding a new groove forming step.

The second aspect of the semiconductor application apparatus according to the present invention
The method further includes the step of providing a continuous anisotropic conductive film on the first terminal electrode and the groove on the first substrate, wherein the first terminal is interposed via the anisotropic conductive film. Preferably, the electrode is connected to the second terminal electrode.

Further, in the second method for manufacturing a semiconductor application device according to the present invention, in the above-mentioned manufacturing method, the semiconductor device may further have substantially the same size as the conductive particles contained in the anisotropic conductive film, and It is preferable to include a step of forming a resin film containing conductive spacer particles in a portion where the anisotropic conductive film is not formed.

[0030]

Embodiments of the present invention will be described below with reference to the drawings. Embodiment 1 FIG. The first embodiment according to the present invention
2. A liquid crystal display device comprising a combination of a liquid crystal display panel of SVGA TFT liquid crystal and a drive circuit board, which is configured as follows. In the first embodiment, the liquid crystal display panel is configured using the glass substrate 1 and, for example, as shown in FIG.
A terminal electrode 2 made of an ITO film having a thickness of about
A gate or source wiring 3 made of Cr, Al, Mo or the like is connected to the terminal electrode 2. In addition, a protective film 4 made of a silicon nitride film or the like is formed on the wiring 3 and the pixel transistor portion to a thickness of about 400 nm.
On the terminal electrode 2, the protective film 4 is removed.
The liquid crystal 7 is injected between the color filter 6 sealed by the sealant 5 and the glass substrate 1. The terminal electrode 2 is, for example, 2400 for a source terminal.
Thousands are formed, 600 for the terminal, for the gate terminal, and slightly for the other signal terminals.

A drive circuit board connected to the terminal electrodes 2 of the liquid crystal panel is manufactured as follows. First, as shown in FIG. 2A, a CMOS circuit 9 is formed on a glass substrate 8 by a low-temperature polysilicon TFT forming process. After the CMOS circuit 9 is formed, as shown in FIG. 2B, a contact hole 10a is formed in an insulating film 10 made of a laminated film such as a silicon nitride film and a SiO ₂ film.
Lower layer Cr 100n on the insulating film 10 by sputtering
m, a two-layer film of an upper Al-based alloy having a thickness of 400 nm is formed, and the source electrode 11s, the drain electrode 11d, the wiring 11 and the terminal electrode 12 are integrally formed simultaneously by patterning. The vicinity of the terminal portion of the drive circuit board manufactured as described above is as shown in the plan view of FIG. In this drive circuit board, for example, the pitch of the terminal electrodes 12 is 80 μm,
The interval between the terminal electrodes 12 is set to 30 μm.

Next, a protective film 13 made of a silicon nitride film or the like is formed to a thickness of about 400 nm in order to protect the wiring 11 and the like, and a resist is formed thereon, and the resist is formed as shown in FIG. By patterning into a shape, a resist 14 patterned into a predetermined shape having rectangular openings 14 a and 14 b respectively on the terminal electrode 12 and between the adjacent terminal electrodes 12 is formed. That is, in the resist 14, as shown in a partial cross-sectional view taken along line AA 'of FIG. 5A, an opening (opening pattern) 14a for forming a contact and a terminal electrode 12 are formed on the terminal electrode 12. A groove-shaped opening (blanking pattern) 14b having a width of about 20 μm is formed between them.

Then, using the resist 14 as a mask, etching is performed using an etching solution containing hydrofluoric acid. Due to this etching, the opening 14 is formed on the terminal electrode 12.
The protective film 13 made of a silicon nitride film is removed via a, the protective film 13 and the insulating film 10 are removed between the terminal electrodes 12, and the glass substrate 1 is etched halfway. Here, the etching time is set so that the glass substrate is etched to a depth of about 20 μm.
The protective film 1 is formed on the terminal electrode 12 through the opening 14a.
Although 3 is removed, the terminal electrode 12 is not removed by the above-mentioned etching solution, and the etching does not proceed any further. In other words, it is necessary to select an etching solution that does not etch the terminal electrode 12.

In this way, as shown in FIG. 5B, the protective film 13 on the terminal electrode 12 is removed and the terminal electrode 1 is removed.
2 is exposed, and at the same time, a groove 15 having a depth of about 20 μm can be formed between the adjacent terminal electrodes 12.
FIGS. 5A and 5B show a part of a cross section taken along line AA ′ of FIG. The liquid crystal panel and the drive circuit board manufactured as described above are arranged on the terminal electrode so that the strip-shaped anisotropic conductive film 16 crosses over the groove 15 as shown in FIG. The terminal electrode 2 of the liquid crystal panel and the terminal electrode 12 of the drive circuit board are joined to each other with the anisotropic conductive film 16 interposed therebetween. Here, as the conductive particles 17 contained in the anisotropic conductive film 16, those having a diameter of 2 to 3 μm were used. In this way, as shown in FIG. 6B, the terminal electrode 2 of the liquid crystal panel and the terminal electrode 12 of the drive circuit board are electrically connected by the conductive particles 17 included in the anisotropic conductive film 16 and are adjacent to each other. Terminal electrode 2 (adjacent terminal electrode 12)
Since the grooves 15 are formed between them, a state in which the conductive particles 17 in the anisotropic conductive film 16 exist apart from each other can be maintained, and a good insulating state can be maintained.

When the drive circuit board is mounted on the liquid crystal panel and the ratio of the area occupied by the terminal portion to the size of the drive circuit board is large, the bonding strength is increased only by the anisotropic conductive film 16 of the terminal portion. Obtainable. Therefore, in the first embodiment, the liquid crystal panel and the drive circuit board are bonded only by the terminal portion. However, the area of the terminal portion is usually not so large as compared with the drive circuit board as shown in the sectional view of FIG. Accordingly, in such a case, a sufficient bonding strength can be obtained by pressing the resin 28 containing the spacer between the portions other than the terminal portion. When the resin containing the spacer is used, the parallelism between the substrates can be maintained by adjusting the diameters of the spacer particles and the conductive particles 17, and the occurrence of mounting failure at the terminal portion can be suppressed. it can.

Embodiment 1 manufactured as described above
According to the liquid crystal display device of the first aspect, the conductive particles 1 included in the anisotropic conductive film 16 are provided between the adjacent terminal electrodes 12 on the drive circuit board.
Since the grooves 15 are formed sufficiently large as compared with the diameter of 7, even if the terminals are extremely narrow in pitch, a short circuit between the terminals does not occur between the glass substrates (between the liquid crystal panel and the drive circuit substrate). Can be implemented. That is, in the first embodiment, the mounting is performed using the anisotropic conductive film. However, since the grooves 15 are provided between the terminal electrodes, the anisotropic conductive resin can appropriately escape to the grooves 15. And the anisotropic conductive film 1
The conductive particles 17 in 6 can be deformed between the terminal electrode 12 and the terminal electrode 2 and normal conduction between the terminal electrodes can be obtained. Further, between the adjacent terminal electrodes, the anisotropic conductive film 16 is formed.
In this case, good insulation is maintained without contact of the conductive particles 17.

Therefore, in the liquid crystal display device of the first embodiment, the interval between the terminal electrodes can be easily reduced to 50 μm or less in order to connect between the high-density wiring and the high-density terminal. In the liquid crystal display device according to the first embodiment, a semiconductor application device such as a display device having 100 or more first terminal electrodes can be easily formed in a small size. Therefore, according to the present invention, not only a liquid crystal display device but also a semiconductor application device that requires connection between terminal electrodes formed at extremely high density can be configured.

In the first embodiment, both the width and depth of the groove 15 are set to be as large as about 20 μm as compared with the conductive particle diameter of 2 to 3 μm in the anisotropic conductive film 16.
Extremely good insulating properties can be maintained between adjacent conductive terminals. However, in the present invention, the diameter of the conductive particles and the width and depth of the groove 15 are not limited to the above-described values, and at least the formation of the groove 15 allows the anisotropic conductive film to be formed between adjacent terminal electrodes. The groove width and depth may be set so that the conductive particles do not come into contact with each other. Specifically, it is preferable that the groove depth is set to be equal to or larger than the conductive particle diameter and the groove width is set to be equal to or more than twice the conductive particle diameter. That is, the anisotropic conductive film is connected by conductive particles containing the terminal electrodes located above and below, and the conductive particles are dispersed in the film so as not to contact each other in the lateral direction. Therefore, by setting the depth of the groove to be not less than the diameter of the conductive particles, the conductive particles located in the groove portion are not deformed,
There is no contact between conductive particles laterally adjacent to each other. Further, by setting the groove width to be twice or more the particle diameter, there is no contact between the conductive particles located in the groove portion and adjacent in the lateral direction. The cross-sectional shape of the groove 15 does not need to be rectangular, and may be various shapes such as a semicircle or a V-shape.

In the liquid crystal display device of the first embodiment, the following advantages are obtained when the depth and width of the groove 15 are set to 5 μm or more. That is, the generally used anisotropic conductive film usually contains conductive particles of 2 to 3 μm,
In the case where the anisotropic conductive film is used, if the depth and the width of the groove 15 are set to 5 μm or more, the insulating properties of the anisotropic conductive film located between the terminal electrodes adjacent to each other can be improved for the above-described reason. Can hold. Therefore, a commonly used anisotropic conductive film can be used without using a special one, and the anisotropic conductive film can be manufactured at low cost.

In the first embodiment, the thickness of the terminal electrode is preferably set to 1 μm or less. In this way, the in-plane distribution of the film thickness of the terminal electrode can be made relatively small, and the height of the surface of the terminal electrode can be made substantially uniform in the substrate. Thereby, a force can be applied evenly to the conductive particles at the time of joining, so that occurrence of poor conduction can be suppressed. Further, in the first embodiment, the depth of the groove 15 may vary considerably when the substrate is large, but if the depth is set to a certain level or more in consideration of the variation, there is no problem in mounting. Does not occur. Therefore, even if the thickness of the drive circuit board is large, mounting can be performed without any problem, and a relatively large board can be used as the drive circuit board. Further, in the first embodiment, since the patterning of the groove 15 is performed simultaneously with the patterning of the protective film, the photolithography process is not newly added, and does not increase the manufacturing cost.

In the method of manufacturing the liquid crystal display device according to the first embodiment, since one bump is not formed on each terminal electrode unlike the bump formation using a wire bonder, the number of terminal electrodes is extremely small. In many cases, the process can be simplified and the production can be performed at low cost. In the first embodiment, wet etching is used as the etching for forming the groove 15. However, the present invention is adopted in consideration of throughput and apparatus cost, and the present invention is not limited to this. Dry etching may be used.

The first embodiment can be applied to the case where the width of the terminal electrodes and the interval between the terminal electrodes are narrower than those of the conventional example. If it is necessary to perform etching with a higher precision width, it is preferable to use dry etching with less side etching. In addition, when RIE-mode anisotropic etching is used among dry etching, highly accurate processing can be performed, and a liquid crystal display device in which the width of terminal electrodes and the distance between terminal electrodes are narrower can be manufactured. In the first embodiment, in the process of manufacturing a low-temperature polysilicon drive circuit on a glass substrate having a large number of chips per substrate, a groove 15 is formed on the drive circuit substrate side.
Was formed. As a result, the increase in cost per unit chip can be reduced as compared with the case where the grooves 15 are provided on the liquid crystal panel side where the number of chips is relatively small. However, the present invention is not limited to this, and a groove may be formed between the terminal electrodes on the liquid crystal panel substrate side.

In the liquid crystal display device according to the first embodiment,
The groove 15 is formed by etching partway through the glass substrate 1. However, when the insulating film 10 is formed relatively thick (1 μm or more), only the insulating film 10 located between the terminal electrodes is etched. The groove may be formed by removing the groove. By doing so, the groove can be formed relatively easily, and the insulation between the terminal electrodes can be improved. In this case, the insulating film 10 is formed of a photosensitive resin, and the insulating film 1 made of the photosensitive resin is formed.
If the groove is formed by exposing and developing 0, the groove can be formed more easily.

As described above, in the liquid crystal display device according to the first embodiment, the grooves are formed between the terminal electrodes of the drive circuit board, so that the rigid body (the glass substrate and the drive circuit board) formed by the anisotropic conductive film is formed. High-density mounting is possible with high yield. Also,
Grooves can be formed simultaneously with photolithography at the time of removal of the protective film of the drive circuit board, and the grooves can be formed without increasing the number of photolithography steps, so that manufacturing costs do not increase. In addition, since processing can be performed on all terminal electrodes at the same time, even if the number of terminals increases, the manufacturing cost does not increase. Further, since the IC can be mounted without being packaged, the cost can be reduced as compared with a case where the IC is individually packaged. Furthermore, since a semiconductor element that is not individually packaged can be used, the area occupied by the semiconductor element can be reduced, and the semiconductor device can be made extremely small and thin.

Embodiment 2 Next, a liquid crystal display device according to a second embodiment of the present invention, which includes a liquid crystal panel of a TFT liquid crystal and a driving circuit substrate, will be described. Embodiment 2
In the liquid crystal display device according to
The liquid crystal panel is different from the driving circuit board of
The same is used. The drive circuit board used in the second embodiment has the same configuration as that of the first embodiment except that the silicon substrate 18 is used instead of the glass substrate 8 in the drive circuit board of the first embodiment. You.

That is, in the second embodiment, as shown in FIG. 8A, the drive circuit substrate is formed on a single-crystal silicon substrate 18 by a normal MOS transistor forming process.
The MOS circuit 29 is formed, and thereafter, as shown in FIG. 8B and FIG. 9, it is manufactured in the same manner as the method of manufacturing the drive circuit board of the first embodiment. The silicon substrate 18 used for the drive circuit board according to the second embodiment contains hydrofluoric acid for the protective film 13 and the insulating film 10 on the surface, similarly to the glass substrate 8 used in the embodiment. Etching can be performed on an etchant and a silicon substrate by selectively using an etchant containing hydrofluoric acid and nitric acid.

In the method of manufacturing the liquid crystal panel device according to the second embodiment, the driving circuit board and the liquid crystal panel manufactured as described above using the silicon substrate 18 are combined with the liquid crystal panel shown in FIGS. 10 (a) and 10 (b). As shown in (1), in the same manner as in the first embodiment, the anisotropic conductive film 16 is mounted between the terminals 2 and 12 by thermocompression so as to always cross the groove 15.

The liquid crystal display device of the second embodiment manufactured as described above has the same operation and effect as the first embodiment.
Furthermore, by using a high-performance drive circuit board composed of a semiconductor IC chip and eliminating the need for steps such as forming bumps on a package or a terminal as in a normal semiconductor device, the cost of the drive IC unit can be significantly reduced. It is possible.

Embodiment 3 In the liquid crystal display device of the third embodiment, a liquid crystal panel of TFT liquid crystal is joined to a drive circuit board, and a groove is formed between terminals on the liquid crystal panel side to prevent a short circuit between adjacent terminals. This is different from the first and second embodiments. As the liquid crystal panel in the third embodiment, for example, a general liquid crystal panel such as 12.1SVGA can be used.

Hereinafter, a method for manufacturing the liquid crystal display device according to the third embodiment will be described. (Preparation of Liquid Crystal Panel) In this method, first, as shown in FIG.
The image display unit 19 is formed in accordance with the manufacturing method described above. As a terminal portion, Cr, A is formed on the gate insulating film 20 of the TFT.
The terminal electrode 2 and the pixel electrode 21 are formed by forming an ITO film having a thickness of about 100 nm so as to be connected to the gate or source wiring 3 composed of Are simultaneously formed. Next, in order to protect the wiring 3 and the pixel transistor section, 400 n
A protective film 4 made of a silicon nitride film or the like having a thickness of about m is formed. In the liquid crystal panel, the terminal electrode pitch and the terminal electrode distance are 80 μm and 30 μm, respectively, as shown in FIG.

Next, a resist is formed on the protective film 4 and the resist is patterned into a shape as shown in FIG. 14 to form rectangular openings on the terminal electrodes 2 and between the adjacent terminal electrodes 2. A resist 14 patterned into a predetermined shape having a portion is formed. That is, in the resist 14, as shown in FIG. 14 and a partial cross-sectional view taken along the line BB ′ of FIG. 14 (FIG. 15A), an opening ( A cutout pattern) 14a and a groove-shaped opening (cutout pattern) 14b having a width of about 20 μm are formed between the terminal electrodes 12.

Then, using the resist 14 as a mask, etching is performed using an etching solution containing hydrofluoric acid. Due to this etching, the opening 14a is formed on the terminal electrode 2.
Then, the protective film 4 made of a silicon nitride film is removed, and between the terminal electrodes 2, the protective film 4 and the insulating film 20 are removed, and etching is performed halfway through the glass substrate 1. Here, the etching time is set so that the glass substrate is etched to a depth of about 20 μm.

Next, as shown in FIG. 16, a cell assembly is carried out by sandwiching the sealing agent 5 between the glass substrate 1 and the color filter 6 in the same manner as in a normal liquid crystal panel manufacturing method. To complete. In the third embodiment, a liquid crystal panel in which the source wiring and the pixel electrode 21 are formed in the same layer is used. However, a photosensitive organic resin film or the like is formed to a thickness of about 3 μm and flattened. May be used in the uppermost layer.

(Production of Driving Circuit Board) Next, the manufacturing process of the driving circuit board to be joined to the liquid crystal panel will be described with reference to the drawings. In the method of manufacturing a drive circuit board according to the third embodiment, as shown in FIG. 17A, a low-temperature polysilicon TFT is formed on a glass substrate 8 in the same manner as in the first embodiment.
A CMOS circuit 9 is formed by a formation process, and a lower layer made of a Cr layer having a thickness of 100 nm
A two-layer film with an upper layer made of an Al-based alloy having a thickness of m is formed by sputtering, and a source / drain electrode and a wiring 1 are formed.
1 and the terminal electrode 12 are formed by patterning. Then, as shown in FIG. 17B, a protection film made of a silicon nitride film or the like
After forming about 0 nm, the opening 13 a is formed on the terminal electrode 12.
Is formed so as to form the protective film 13. As shown in FIG. 18, each terminal electrode 12 has a terminal pitch of 80 μm and a distance between terminals of 30 μm.
It is formed so that

(Joining of Liquid Crystal Panel and Driving Circuit Board) The liquid crystal panel and the driving circuit board manufactured as described above are connected to the strip-shaped anisotropic conductive film 1 as shown in FIG.
6 is arranged so as to cross over the groove 15, and the terminal electrode 2 of the liquid crystal panel and the terminal electrode 12 of the drive circuit board are joined to face each other via the anisotropic conductive film 16. Here, the conductive particles 17 contained in the anisotropic conductive film 16 have a diameter of 2-3.
μm ones were used. By doing so, FIG. 19 (b)
As shown in (1), the terminal electrode 2 of the liquid crystal panel and the terminal electrode 12 of the drive circuit board are electrically connected by the conductive particles 17 included in the anisotropic conductive film 16 and the adjacent terminal electrodes 2 (adjacent terminal electrodes 12) Since the grooves 15 are formed between the conductive particles, the conductive particles 17 in the anisotropic conductive film 16 can be present apart from each other, and a good insulating state can be maintained.

Also in the third embodiment, as in the first embodiment, a sufficient bonding strength can be obtained by pressing the resin containing the spacer between the portions other than the terminal portion and pressing the resin. Further, by adjusting the diameters of the spacer particles and the conductive particles 17, it is possible to maintain the parallelism between the substrates, and it is possible to make it difficult for defective mounting at the terminal portions to occur.

The liquid crystal display device of the third embodiment manufactured as described above does not cause a short circuit between adjacent terminal electrodes even when the terminal electrodes have a narrow pitch, as in the first embodiment. In addition, bonding between glass substrates is possible, and miniaturization can be achieved. Even when the number of terminals is further increased, it is not necessary to treat each terminal as in the case of forming a bump using a wire bonder, so that the process can be extremely simplified and the manufacturing can be performed at low cost.

In the present embodiment, the low-temperature polysilicon TFT on the glass substrate is mounted on the drive circuit board. However, since the liquid crystal panel side is processed, the groove is formed by the drive circuit on the silicon substrate in the second embodiment. Even if a board on which the substrate 15 is not formed is formed and mounted, the mounting can be similarly performed. Naturally, the same effect can be obtained even if the grooves 15 are formed in both the drive circuit board and the liquid crystal panel. Further, also in the third embodiment, the groove 15 is
Dry etching may be used as in the first embodiment.

Embodiment 4 FIG. In the first, second and third embodiments, after the protective film 13 on the terminal electrode is patterned, the groove 15 is formed by using the resist 14 used for the patterning, but the protective film is not formed on the terminal electrode. Of course, a liquid crystal panel or a drive circuit board may be used.
The fourth embodiment shows an example of the formation of a groove when the protective film 13 is not formed on the terminal electrode.

That is, in the fourth embodiment, after the insulating film 10 composed of a plurality of layers is formed on the glass substrate 1, a conductor layer for forming the terminal electrode 42 is formed on the insulating film 10. Then, a resist 44 is formed in a predetermined shape on the conductor layer, and as shown in FIG. 20A, the conductor layer is etched using the resist 44 as a mask to form a terminal electrode 44 having a predetermined shape. . Next, FIG.
The resist 44 is removed as shown in FIG.
As shown in (c), the insulating film 10 and the glass substrate 1 are etched using the terminal electrode 42 as a mask to form the groove 4.
5 is formed. In the present invention, before removing the resist 44, the groove 45 may be formed by etching using the resist 44 and the terminal electrode 42 as a mask.

Here, in the etching step for forming the groove 15, it is preferable that only the vicinity of the terminal electrode is immersed in an etching solution to form the groove 15 between the terminals. In this way, when forming the groove 15 on the liquid crystal panel side, it is possible to perform etching for forming the groove after performing cell assembly in the liquid crystal panel. The liquid crystal panel and the drive circuit board manufactured as described above were formed in the same manner as in Embodiments 1, 2, and 3, and as shown in FIGS. The terminal electrode 4 must cross the groove 15 without fail.
2 and the terminal electrode 12 and are mounted by thermocompression bonding. In the method according to the fourth embodiment, all the grooves 45 are connected to each other as shown in FIG. 21A. However, as shown in FIG. Is obtained.

Further, since the resist for forming the terminal electrode 42 or the terminal electrode 42 itself is used as a mask for forming the groove 15, a photoengraving step for patterning for forming the groove 15 is newly added. Nothing to add. Therefore, the third embodiment is similar to the first to third embodiments in that the manufacturing cost is not increased.

In each of the first to fourth embodiments described above, the grooves are formed in only one of the liquid crystal panel and the drive circuit board. However, the present invention is not limited to this, and the present invention is not limited to this. A groove may be formed on both sides. With this configuration, the same effect can be obtained even when the depths of the grooves formed in the panel and the substrate are relatively small.

In the first to fourth embodiments, the liquid crystal display device has been described, but the present invention is not limited to this. That is, the present invention can be applied to a semiconductor application device having a configuration in which at least two substrates each having a plurality of terminal electrodes are attached to each other and the terminal electrodes are connected to each other. Has an effect.

It is needless to say that various modifications described in the first embodiment are possible in the second and third embodiments.

[0066]

As described above in detail, the semiconductor device according to the present invention comprises a first substrate having a plurality of first terminal electrodes and a second substrate having a plurality of second terminal electrodes. Are bonded so that the first terminal electrode and the second terminal electrode face each other with an anisotropic conductive film therebetween, and the first substrate is provided between the first terminal electrodes. Each groove is formed. Thereby, the distance between the first substrate and the second substrate in the groove portion between the first terminal electrodes can be increased, so that the anisotropic conductive material located between the first terminal electrodes can be increased. Since the insulation characteristics of the film can be maintained well and the distance between the terminal electrodes can be reduced, the size can be reduced. In addition, for example, by forming a resist having an opening in a groove portion to be formed and etching the groove, many grooves can be formed at once,
It can be manufactured with high throughput and at low cost.

In the semiconductor device according to the present invention,
The distance between the first terminal electrodes can be reduced to 50 μm or less, whereby high-density wiring and high-density connection between terminals can be achieved, and the size can be further reduced.

Further, in the semiconductor application device according to the present invention, a small-sized and large-scale circuit can be configured by setting the number of terminals of the first terminal electrode to 100 or more.

In the semiconductor device according to the present invention,
By setting the thickness of each of the first and second terminal electrodes to 1 μm or less, variation in the thickness of the terminal electrodes can be reduced, so that conduction between the first terminal electrode and the second terminal electrode can be reduced. Good insulation properties can be obtained between the first terminal electrodes and between the second terminal electrodes. Further, since the terminal electrode can be made thin, the thickness of the semiconductor application device can be reduced.

Further, in the semiconductor application device according to the present invention, the depth of the groove is larger than the diameter of the conductive particles contained in the anisotropic conductive film, and the width of the groove is at least twice the diameter of the conductive particle. By doing so, the insulating properties of the anisotropic conductive film located between the first terminal electrodes adjacent to each other (between the second electrodes adjacent to each other) can be more favorably maintained. Can be further reduced, and the size can be further reduced.

In the semiconductor device according to the present invention,
By setting the depth and width of the groove to 5 μm or more, a commonly used anisotropic conductive film containing conductive particles of 2 to 3 μm can be used. Can be used, and the cost can be reduced.

In the semiconductor device according to the present invention,
When at least one of the first and second substrates is a transparent insulating substrate, a display device such as a liquid crystal display panel can be obtained.

Further, in the semiconductor application device according to the present invention, the anisotropic conductive film is formed in a portion where the first substrate and the second substrate face each other and where the anisotropic conductive film is not formed. By forming a resin film having substantially the same size as the conductive particles contained in the conductive film and including a non-conductive spacer, the first substrate and the second substrate can be substantially separated from each other. Can be parallel, so the first
And the second terminal electrode, and good insulation properties can be obtained between the first terminal electrode and the second terminal electrode.

In the semiconductor application device according to the present invention,
When the first terminal electrode is formed on the first substrate via an insulating film having a thickness of 1 μm or more, the insulating film located between the first terminal electrodes is removed by removing the groove. In this case, the grooves can be formed relatively easily, and the cost can be reduced.

In the semiconductor device according to the present invention,
When one of the first and second substrates is a silicon substrate, circuits can be easily integrated, so that a high-performance and small-sized circuit can be formed.

Further, the first embodiment of the semiconductor application device according to the present invention
The manufacturing method of the above, the first substrate and the second substrate,
A manufacturing method including a bonding step of bonding the first and second terminal electrodes while facing each other with an anisotropic conductive film therebetween, wherein the first and second terminal electrodes are provided on the first substrate before the bonding step. Forming a groove between the first and second terminal electrodes, so that a small and thin semiconductor application device in which grooves are formed between the first terminal electrodes adjacent to each other on the first substrate. Can be manufactured.

Further, the first embodiment of the semiconductor application device according to the present invention
In the manufacturing method of (1), when the first substrate is a substrate made of glass, quartz or silicon, the groove forming step includes an etching step of etching the first substrate using a solution containing hydrofluoric acid. Thereby, the groove can be easily formed, and the manufacturing cost can be reduced.

Further, the first embodiment of the semiconductor application device according to the present invention
In the manufacturing method of (1), when the first substrate is a substrate made of glass, quartz or silicon, the groove forming step includes a step of etching the first substrate by dry etching to form the groove. You may do so. With this configuration, since a groove having a predetermined shape can be formed with high accuracy, a semiconductor device having better insulation characteristics between adjacent terminal electrodes can be manufactured.

Further, the first of the semiconductor application devices according to the present invention
In the manufacturing method of (1), when the first terminal electrode is formed on the first substrate via an insulating film having a thickness of 1 μm or more, the groove forming step includes the step of forming the first terminal By forming the groove by etching and removing the insulating film located between the electrodes, the groove can be formed relatively easily, so that the manufacturing cost can be reduced.

In the above manufacturing method, the insulating film is formed of a photosensitive resin, and the groove forming step includes exposing and developing the insulating film made of the photosensitive resin, so that the groove can be formed more easily. Can be formed, so that the manufacturing cost can be further reduced.

The first aspect of the semiconductor application device according to the present invention
In the manufacturing method of (1), the first terminal electrode is formed by forming an electrode forming mask having a predetermined shape after forming an electrode layer and etching the same, and using the electrode forming mask to form the first terminal electrode. When the groove is formed by etching between the terminal electrodes, it is not necessary to separately form a mask for forming the groove, so that the manufacturing cost can be reduced.

Further, in the first method of manufacturing a semiconductor device according to the present invention, in the groove forming step, a resist is formed in a portion other than the groove, and the resist is used as a mask to form the groove. By doing so, the groove can be easily formed.

Further, in the first method for manufacturing a semiconductor device according to the present invention, in the groove forming step, a groove is formed by etching using the first terminal electrode as a mask, thereby reducing the manufacturing step. Since it can be simplified, the manufacturing cost can be reduced.

The second embodiment of the semiconductor application device according to the present invention
The manufacturing method of the above, the first substrate and the second substrate,
A method for manufacturing a semiconductor application device, comprising: a step of joining the first terminal electrode and the second terminal electrode so as to face each other via an anisotropic conductive film. Since the method includes the forming step and the etching step, a semiconductor applied device in which a groove is formed between the first terminal electrodes adjacent to each other on the first substrate,
It can be manufactured without adding a new groove forming step, and can be manufactured at low cost.

The second aspect of the semiconductor application device according to the present invention
The method further includes the step of providing a continuous anisotropic conductive film on the first terminal electrode and the groove on the first substrate, wherein the first terminal is interposed via the anisotropic conductive film. Manufacturing a semiconductor application device capable of maintaining good insulation properties of the anisotropic conductive film located between the first terminal electrodes by connecting the electrodes to the second terminal electrodes. Can be.

Further, in the second method for manufacturing a semiconductor device according to the present invention, in the above method, the resin film containing the spacer particles is further formed on a portion where the anisotropic conductive film is not formed. By including the step, the conduction between the first terminal electrode and the second terminal electrode is good, and the insulation characteristics between the first terminal electrode and the second terminal electrode are better. A city semiconductor application device can be manufactured.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing a configuration near a terminal portion of a liquid crystal panel in a semiconductor application device according to a first embodiment of the present invention.

FIG. 2 is a cross-sectional view showing a manufacturing process of the drive circuit board in the semiconductor device according to the first embodiment;

FIG. 3 is a plan view showing a configuration near a terminal portion of the drive circuit board according to the first embodiment;

FIG. 4 is a plan view when a resist 14 is further formed on the plan view of FIG. 3;

FIG. 5 is a cross-sectional view showing a step of forming a groove in the first embodiment.

FIG. 6A is a plan view schematically showing a configuration when an anisotropic conductive film is formed on a terminal conductor and a groove in the manufacturing process of the first embodiment, and FIG. FIG. 3 is a cross-sectional view of a terminal portion when a liquid crystal panel and a drive circuit board are joined.

FIG. 7 is a cross-sectional view of a terminal portion when the liquid crystal panel and the driving circuit board in the liquid crystal display device according to the first embodiment are joined.

FIG. 8 is a cross-sectional view showing a manufacturing process of a drive circuit board in the semiconductor device according to the second embodiment of the present invention.

FIG. 9 is a cross-sectional view showing a step of forming a groove in the drive circuit board according to the second embodiment.

FIG. 10A is a plan view schematically illustrating a configuration when an anisotropic conductive film is formed on a terminal conductor and a groove in a manufacturing process according to the second embodiment; FIG. 3 is a cross-sectional view of a terminal portion when a liquid crystal panel and a drive circuit board are joined.

FIG. 11 is a cross-sectional view of a terminal portion when a liquid crystal panel and a driving circuit board in the liquid crystal display device of Embodiment 2 are joined.

FIG. 12 is a partial cross-sectional view near a terminal of a liquid crystal panel in a liquid crystal display device according to a third embodiment of the present invention.

FIG. 13 is a plan view showing a configuration near a terminal portion of the liquid crystal panel of the third embodiment.

14 is a plan view when a resist 14 is further formed on the plan view of FIG.

FIG. 15 is a cross-sectional view showing a step of forming a groove in the third embodiment.

FIG. 16 is a cross-sectional view showing a configuration near a terminal portion of the liquid crystal panel of the third embodiment.

FIG. 17 is a sectional view illustrating a manufacturing step of the drive circuit board according to the third embodiment;

FIG. 18 is a plan view of the vicinity of a terminal portion of the drive circuit board according to the third embodiment.

FIG. 19A is a plan view schematically showing a configuration when an anisotropic conductive film is formed on a terminal conductor and a groove in the manufacturing process of the third embodiment; FIG. 4 is a cross-sectional view of a terminal portion when a liquid crystal panel and a drive circuit board are joined.

FIG. 20 is a cross-sectional view showing a step of forming a groove in the liquid crystal panel according to the fourth embodiment of the present invention.

FIG. 21A is a plan view schematically showing a configuration when an anisotropic conductive film is formed on a terminal conductor and a groove in the manufacturing process of the fourth embodiment, and FIG. FIG. 3 is a cross-sectional view of a terminal portion when a liquid crystal panel and a drive circuit board are joined.

FIG. 22 is a cross-sectional view for explaining the principle of connection using an anisotropic conductive film.

FIG. 23A is a plan view schematically showing a configuration when an anisotropic conductive film is formed on a terminal electrode in a conventional example, and FIG. 23B is a plan view in which a substrate in the conventional example is bonded. FIG. 4 is a cross-sectional view of the terminal portion at the time.

FIG. 24A is a plan view schematically showing a configuration when an anisotropic conductive film is formed on a terminal electrode in a conventional example in which a bump is formed on a terminal electrode, and FIG. FIG. 10 is a cross-sectional view of a terminal portion when a conventional substrate in which bumps are formed on terminal electrodes is joined.

FIG. 25A is a plan view of the entire liquid crystal display device formed by using the COG method, and FIG. 25B is a plan view of the entire liquid crystal display device formed by using the GOG method.

FIG. 26A is a plan view schematically showing a configuration in which an anisotropic conductive film is formed on a terminal electrode in a conventional example in which one terminal electrode is relatively thick, and FIG. FIG. 11 is a cross-sectional view of a terminal portion when a conventional substrate in which one terminal electrode is relatively thick is joined.

[Explanation of symbols]

1,8 glass substrate, 2,42 terminal electrodes, 3,11
Wiring, 4,13 protective film 4,7 liquid crystal, 5 sealant,
6 color filter, 9 CMOS circuit, 10, 20
Insulating film, 10a contact hole, 11s source electrode, 11d drain electrode, 12 terminal electrode, 14,
44 resist, 14a, 14b opening, 15, 45
Groove, 16 anisotropic conductive film, 17 conductive particles, 18 silicon substrate, 19 image display section, 20 gate insulating film,
21 Pixel electrode.

Claims (21)

[Claims] A first substrate having a plurality of first terminal electrodes; and a second substrate having a plurality of second terminal electrodes formed so as to correspond to the first terminal electrodes, respectively. A semiconductor application device in which the first terminal electrode and the second terminal electrode are joined to face each other with an anisotropic conductive film interposed therebetween, wherein the first terminal A semiconductor application device, wherein a groove is formed between electrodes. 2. The distance between the first terminal electrodes is 50 μm.
The semiconductor application device according to claim 1, wherein: 3. The semiconductor application device according to claim 1, wherein the number of terminals of the first terminal electrode is 100 or more. 4. The semiconductor device according to claim 1, wherein each of the first and second terminal electrodes has a thickness of 1 μm or less. 5. The method according to claim 1, wherein the anisotropic conductive film contains conductive particles, the depth of the groove is larger than the diameter of the conductive particles, and the width of the groove is at least twice the diameter of the conductive particles. Item 1
5. The semiconductor application device according to any one of Items 4 to 4. 6. The semiconductor device according to claim 1, wherein the depth and width of the groove are 5 μm or more. 7. The semiconductor application device according to claim 1, wherein at least one of said first and second substrates is a transparent insulating substrate. 8. An electroconductive particle contained in the anisotropic conductive film, at least in a portion where the first substrate and the second substrate oppose each other and at least a part where the anisotropic conductive film is not formed. The semiconductor application device according to any one of claims 1 to 7, wherein a resin film having substantially the same size as above and including a non-conductive spacer is formed. 9. The first terminal electrode is formed on the first substrate via an insulating film having a thickness of 1 μm or more,
The device according to any one of claims 1 to 4, wherein the groove is formed by removing an insulating film located between the first terminal electrodes. 10. The semiconductor application device according to claim 1, wherein one of said first and second substrates is a silicon substrate. 11. A first substrate having a plurality of first terminal electrodes and a second substrate having a plurality of second terminal electrodes formed so as to correspond to the first terminal electrodes, A method for manufacturing a semiconductor application device, comprising: a joining step of joining a first terminal electrode and the second terminal electrode so as to face each other via an anisotropic conductive film. In the first substrate, the first
Forming a groove between the terminal electrodes of the semiconductor device. 12. The method according to claim 12, wherein the first substrate is a substrate made of glass, quartz or silicon, and the groove forming step includes an etching step of etching the first substrate using a solution containing hydrofluoric acid. Claim 1.
2. The method for manufacturing a semiconductor application device according to 1. 13. The semiconductor application device according to claim 11, wherein said first substrate is a substrate made of glass, quartz or silicon, and said groove forming step includes a step of etching said first substrate by dry etching. Manufacturing method. 14. The method according to claim 14, wherein the first terminal electrode is formed on the first substrate via an insulating film having a thickness of 1 μm or more, and wherein the groove forming step is performed between the first terminal electrodes. 12. The method according to claim 11, further comprising the step of forming a groove by etching and removing the located insulating film. 15. The method according to claim 14, wherein the insulating film is formed of a photosensitive resin, and the groove forming step includes exposing and developing the insulating film made of the photosensitive resin. 16. The first terminal electrode is formed by forming an electrode layer for forming the first terminal electrode, and then forming an electrode forming mask of a predetermined shape on the electrode layer. 12. The method according to claim 11, wherein the groove is formed by etching between the first terminal electrodes using the electrode forming mask in the groove forming step. . 17. The semiconductor application apparatus according to claim 11, wherein in the groove forming step, a resist is formed in a portion other than the groove, and the groove is formed by etching using the resist as a mask. Production method. 18. The method according to claim 11, wherein in the groove forming step, a groove is formed by etching using the first terminal electrode as a mask. 19. A first substrate having a plurality of first terminal electrodes and a second substrate having a plurality of second terminal electrodes formed so as to correspond to the first terminal electrodes, A method for manufacturing a semiconductor application device, comprising a step of joining a first terminal electrode and a second terminal electrode so as to face each other with an anisotropic conductive film interposed therebetween, the method comprising: Forming a continuous protective film between the first terminal electrodes; forming a continuous protective film between the first terminal electrodes; having a first opening on the first terminal electrode; and forming a second opening between the first terminal electrodes. Forming a resist having a predetermined shape on the protective film, the method comprising: forming a contact hole on the first terminal electrode by removing the protective film through the first opening; Removing the protective film through the second opening to remove the first end; An etching step of forming a groove between the daughter electrodes. 20. The manufacturing method further includes the step of providing an anisotropic conductive film continuous on the first terminal electrode and the groove on the first substrate, and 20. The method according to claim 11, wherein the first terminal electrode is connected to the second terminal electrode. 21. The method according to claim 21, wherein the resin film having substantially the same size as the conductive particles contained in the anisotropic conductive film and containing the non-conductive spacer particles is further formed on the anisotropic conductive film. 21. The method of manufacturing a semiconductor application device according to claim 11, further comprising a step of forming the film on a portion where the film is not formed.