JPH08254686A - Production of display device - Google Patents

Abstract

PURPOSE: To provide a packaging method for driver circuits which are small in occupying area of a passive matrix type or active matrix type electro-optical display device (for example, liquid crystal display device). CONSTITUTION: The circuits (stick crystal) of nearly the same length as the length of one side of a matrix 8 are formed as the driver circuits 7 on a supporting substrate. These circuits 7 are adhered onto a display device substrate 1 and the terminals of the circuits are connected to the terminals of the display device and thereafter, the circuits are treated in gas contg. halogen, by which the supporting substrate of the driver circuits 7 is removed. As a result, the circuits of the extremely simple constitution without having the turning around area of wirings which is heretofore needed by a TAB method and COG method are formed. More particularly, the driver circuits 7 are formed on the large area substrate 1 consisting of glass, etc., in this embodiment. Further, the display device may be formed on a material, such as plastic substrate, which is light and is highly resistant to impact. The display device having excellent portability is thereby obtd.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a passive matrix type or active matrix type display device such as a liquid crystal display device, and more particularly to a method for effectively mounting a semiconductor integrated circuit mounted on the periphery of a display screen. The present invention relates to a method for manufacturing a display device that can be mounted on a thin substrate such as a film.

[0002]

2. Description of the Related Art Passive matrix type and active matrix type structures are known as matrix type display devices. In the passive matrix type, a large number of strip-shaped electric wirings (low wirings) made of a transparent conductive film or the like are formed in a certain direction on the first substrate, and on the second substrate, the above-mentioned first substrate is formed. Similar strip-shaped electrical wiring (column wiring) is formed in a direction substantially perpendicular to the electrical wiring. Then, the substrates are arranged so that the electric wirings on both substrates face each other.

If an electro-optical material, such as a liquid crystal material, whose translucency, light reflection / scattering property is changed by voltage / current, etc. is provided between the substrates, an arbitrary low wiring of the first substrate and the second wiring are provided.
By applying a voltage / current or the like between the substrate and any column wiring, it is possible to select the translucency, the light reflection / scattering property or the like of the intersecting portion. In this way, matrix display is possible.

In the active matrix type, a row wiring and a column wiring are formed on the first substrate by using a multi-layer wiring technique, a pixel electrode is provided at an intersection of these wirings, and a thin film transistor (TFT) is provided on the pixel electrode. ) Is provided to control the potential and current of the pixel electrode. In addition, a transparent conductive film is provided on the second substrate,
The substrate is arranged so that the pixel electrode on the substrate and the transparent conductive film on the second substrate face each other.

In these display devices, glass is usually used as a substrate. In the passive matrix type, a transparent conductive film is formed on the substrate and this is etched to
Since there is no particularly complicated process other than forming the column wiring pattern, it was possible to use plastic as the substrate. On the other hand, in the active matrix type, which has a relatively high temperature film forming process and needs to avoid mobile ions such as sodium, it is necessary to use a glass substrate having an extremely low alkali concentration as a substrate.

[0006]

In any case, in the conventional matrix type display device, except the special one,
It was necessary to attach a semiconductor integrated circuit (referred to as a peripheral drive circuit or a driver circuit) for driving the matrix. Traditionally, this has been done by tape automated bonding (TAB) or chip-on-glass (COG). However, since the scale of the matrix is as large as several hundreds of rows, the number of terminals of the integrated circuit is very large, and since the driver circuit corresponding thereto is a rectangular IC package or semiconductor chip, these terminals are Since the wiring needs to be routed to connect with the electric wiring on the substrate, the area of the peripheral portion becomes so large that it cannot be ignored compared to the display screen.

As a method for solving this problem, Japanese Unexamined Patent Publication No. Hei 7
-14880 has a driver circuit in the matrix 1
A method is disclosed in which it is formed on an elongated substrate (called a stick or a stick crystal) having approximately the same size as the sides, and this is connected to the terminal portion of the matrix. Such a layout is possible because a driver circuit having a width of about 2 mm is sufficient.
Therefore, most of the substrates can be used as the display screen.

However, regarding the stick crystal, the thickness of the substrate of the driver circuit hinders the miniaturization of the entire display device. For example, it is possible to reduce the thickness of the substrate to 0.3 mm because it is necessary to make the display device thinner by optimizing the type and process of the substrate. However, it is difficult to set the thickness of the stick crystal to 0.5 mm or less because of the strength required in the manufacturing process. As a result, when the substrates are laminated,
Stick crystals will be produced for 0.2 mm or more.

Further, when the stick crystal and the substrate of the display device are different in type, a circuit may be defective due to a difference in thermal expansion or the like. This problem was particularly noticeable when a plastic substrate was used as the substrate of the display device. This is because it is practically impossible to use plastic as the stick crystal substrate from the viewpoint of heat resistance.

As another method for solving this problem, a method of forming a semiconductor integrated circuit having a TFT on another supporting substrate, peeling it off and adhering it to another substrate, or A method of removing the original supporting substrate after adhering it to another substrate is known. This is commonly known as the Silicon on Insulator (SOI) technology. However, with this technique, the semiconductor integrated circuit is defined by the size of the supporting substrate, and it is clear that it cannot sufficiently cope with, for example, an increase in the area of a display element.

Further, when the supporting substrate is removed, the semiconductor integrated circuit is often damaged, resulting in a decrease in yield. An object of the present invention is to provide a method for manufacturing a display device, which solves such problems, realizes further reduction in size and weight of the display device, and achieves a high yield. .

[0012]

According to the present invention, a semiconductor integrated circuit equivalent to a stick crystal is mechanically bonded on a substrate of a display device, and electrical connection is completed. The feature is that the driver circuit portion is thinned by removing only the crystal support substrate. In such a structure, the deformation stress due to the thermal expansion of the substrate is evenly applied to the entire circuit, so that it is possible to avoid that the stress concentrates only on a specific portion and a defect is generated.

In this case, what requires the highest technology is a method of removing the supporting substrate and peeling the semiconductor integrated circuit. The present invention is characterized in that a gas containing halogen, particularly halogen fluoride, is used when the semiconductor integrated circuit is peeled from the supporting substrate. Halogen fluoride is a substance represented by the chemical formula XF _n (X is a halogen other than fluorine, n is an integer), and for example, chlorine monofluoride (C
IF), chlorine trifluoride (ClF ₃ ), bromine monofluoride (B
rF), bromine trifluoride (BrF ₃ ), iodine monofluoride (I
F), iodine trifluoride (IF ₃ ) and the like are known.

Halogen fluoride has a characteristic that silicon is etched even in a non-plasma state, but silicon oxide is not etched at all. The fact that there is no need to use plasma is effective in improving the yield because there is no circuit destruction due to plasma damage. Further, the extremely high etching selectivity between silicon oxide and silicon is also advantageous in that it does not damage the circuit or the device.

In the present invention, a release layer containing silicon as a main component is formed on a supporting substrate, and a semiconductor integrated circuit covered with silicon oxide is formed thereon. Silicon is etched by halogen fluoride without using plasma as described above, but other halogen-containing gases such as carbon tetrafluoride (CF ₄ ) and nitrogen trifluoride (NF ₃ ) are also included. Since silicon is etched in a plasma state, it can be used in the present invention.
Therefore, by placing the supporting substrate in a gas containing halogen such as halogen fluoride, or in plasma,
The release layer of the supporting substrate can be etched, and thus the semiconductor integrated circuit can be released.

A display device to be manufactured according to the present invention is provided with respect to a surface of the first substrate which has an electrical wiring and an elongated semiconductor integrated circuit electrically connected to the electrical wiring and on which the electrical wiring is formed. The semiconductor integrated circuit has a structure in which the transparent conductive film of the second substrate having a transparent conductive film on the surface is opposed to each other. Like the stick crystal of JP-A-7-14880, the semiconductor integrated circuit is , Matrix) is approximately equal to the length of one side. And, this semiconductor integrated circuit is manufactured on another supporting substrate,
As described above, it is a method of peeling using a gas having a halogen and mounting it on the first substrate.

Particularly in the case of the passive matrix type,
A first electric wiring of a plurality of transparent conductive films extending in the first direction, and a long and narrow first semiconductor integrated circuit connected to the first electric wiring and having a TFT and extending in a second direction substantially perpendicular to the first direction. And a second electric wiring of a plurality of transparent conductive films extending in the second direction and connected to the first electric wiring.
A second substrate having a second semiconductor integrated circuit extending in the first direction, the first electric wiring and the second electric wiring being arranged to face each other. The first and second semiconductor integrated circuits are separated from those formed on the other supporting substrate and mounted on the respective substrates.

In the case of the active matrix type, a plurality of first electric wirings extending in the first direction and TFTs connected to the first electric wirings are provided, and the second electric wirings are substantially perpendicular to the first direction. A first semiconductor integrated circuit extending in the second direction, a plurality of second electric wirings extending in the second direction, connected to the second electric wiring, and
A second substrate having a transparent conductive film on the surface of a first substrate having an FT and having a second semiconductor integrated circuit extending in the first direction.
The first and second electrical wiring of the first substrate,
In the display device arranged so that the transparent conductive film of the second substrate faces each other, the first and second semiconductor integrated circuits, which are formed on another supporting substrate, are peeled off to form the first and second semiconductor integrated circuits. Attach to the board.

An example of a cross section of a display device manufactured according to the present invention is shown in FIG. FIG. 1A is viewed at a relatively small magnification. The left side of the figure shows a driver circuit section 7 provided with a semiconductor integrated circuit, and the right side shows a matrix section 8. On the substrate 1, a pattern of the electric wiring 4 made of a material such as a transparent isoelectric film is formed, and a protrusion (bump) 6 is further provided by a material such as gold. On the other hand, the semiconductor integrated circuit 2 has substantially the same thickness as the TFT, and is made of a material whose contact resistance does not fluctuate due to oxidation, such as a conductive oxide, in the connection portion.
The electrode 5 is provided and brought into contact with the bump 6. Then, a resin 3 is sealed between the semiconductor integrated circuit 2 and the substrate 1 for mechanical fixing. (Fig. 1 (A))

FIG. 1B is an enlarged view of the contact portion surrounded by a dotted line in FIG. 1A. The reference numeral is FIG.
The same thing as (A) is shown. Further, FIG. 1 (C) is an enlarged view of a portion surrounded by a dotted line in FIG. 1 (B). That is, the semiconductor integrated circuit has a structure in which the N-channel type TFT (12) and the P-channel type TFT (13) are sandwiched between the base insulating film 11, the interlayer insulator 14 or the passivation film 15 such as silicon nitride. . (FIG. 1 (B), FIG.
(C))

Normally, silicon oxide is used as the base film 11 when forming a semiconductor integrated circuit. However, since it is inferior in moisture resistance and the like by itself, a passivation film must be separately provided thereon. As shown in FIG. 7, if the thickness of the semiconductor circuit and its contact portion is smaller than the thickness of the liquid crystal between the substrates, it is possible to stack the counter substrate 16 on the circuit. In that case, as in the liquid crystal display device disclosed in Japanese Patent Laid-Open No. 5-66413, liquid crystal sealing (sealing) processing is performed on the outside of the driver circuit portion 7 with a sealing agent 17 such as epoxy resin. Since the liquid crystal material 18 is filled between the substrates 1 and 16, mobile ions and the like do not enter from the outside, and it is not necessary to provide a special passivation film. (Fig. 3)

Regarding the contact portion, in addition to the method using bumps, as shown in FIG. 1 (D), conductive particles such as gold particles 9 are diffused to the adhesive portion, whereby
Electrical contact may be obtained. The particle diameter is
It may be set to be slightly larger than the distance between the semiconductor integrated circuit 2 and the substrate 1. (FIG. 1D) An outline of the manufacturing order of such a display device is shown in FIG. FIG. 2 shows a procedure for manufacturing a passive matrix display device. First, a large number of semiconductor integrated circuits 22 are formed on the supporting substrate 21 with the peeling layer interposed therebetween. (Fig. 2 (A))

Then, this is divided to obtain stick crystals 23 and 24. The stick crystal obtained is tested for electrical properties before moving on to the next step,
It is good to select good products and defective products. (Fig. 2 (B)) Next,
The surfaces of the stick crystals 23, 24 on which the circuits are formed are adhered to the surfaces 26, 28 of the wiring patterns of the transparent conductive film of the other substrates 25, 27, respectively, to establish electrical connection. . (Fig. 2 (C), Fig. 2 (D))

The release layer is then etched by a gas containing halogen by the method of the invention, and
The supporting substrate for the stick crystals 23, 24 is peeled off, and only the semiconductor integrated circuits 29, 30 are attached to the surface 2 of the substrate.
Leave on 6, 28. (FIG. 2 (E), FIG. 2 (F)) Finally, the substrates thus obtained are faced to each other to obtain a passive matrix display device. The surface 26 means the surface opposite to the surface 26, that is, the surface on which the wiring pattern is not formed (FIG. 2 (G)).

In the above case, the row stick crystal (the stick crystal for the driver circuit that drives the row wiring) and the column stick crystal (the stick crystal for the driver circuit that drives the column wiring) are the same. It is cut out from the substrate 21, but needless to say, it may be cut out from another substrate. Although FIG. 2 shows an example of the passive matrix type display device, it goes without saying that the same can be applied to the active matrix type display device. Further, the case where a material such as a film is formed as the substrate is shown in the embodiment.

[0026]

【Example】

[Embodiment 1] This embodiment outlines a manufacturing process of one substrate of a passive matrix liquid crystal display device. This embodiment will be described with reference to FIGS. 4 and 5. FIG.
Shows an outline of a process of forming a driver circuit on a stick crystal. Further, FIG. 5 shows an outline of a process of mounting the stick crystal on the substrate of the liquid crystal display device.

A glass substrate was used as a supporting substrate for the stick crystal. First, a 3000 Å thick silicon film 32 was deposited as a release layer on the glass substrate 31. Since the silicon film 32 is etched when the circuit formed on it and the substrate are separated from each other, there is almost no problem with the film quality, and therefore the silicon film 32 may be deposited by a method that can be mass-produced. Further, the silicon film may be amorphous or crystalline.

The glass substrate is Corning 705.
9, 1737, NH Techno Glass NA45, 35,
Non-alkali or low-alkali glass such as Nippon Electric Glass OA2 or quartz glass may be used. When quartz glass is used, its cost becomes a problem, but in the present invention, 1
Since the area used for one liquid crystal display device is extremely small, the cost per unit is sufficiently small.

A silicon oxide film 33 having a thickness of 1000 Å was deposited on the silicon film 32. Since this silicon oxide film serves as a base film, sufficient care must be taken in its fabrication. And
The crystalline island-shaped silicon regions (silicon islands) 34 and 35 were formed by a known method. Although the thickness of the silicon film largely influences the required characteristics of the semiconductor circuit, it is generally preferable that the thickness is thin. In this embodiment, it is set to 400 to 600Å.

In order to obtain crystalline silicon, a method of irradiating amorphous silicon with strong light such as laser (laser annealing method) or a method of solid phase growth by thermal annealing (solid phase growth method) is used. When the solid phase growth method is used, as disclosed in JP-A-6-244104, if a catalytic element such as nickel is added to silicon, the crystallization temperature can be lowered and the annealing time can be shortened. Further, as in Japanese Patent Laid-Open No. 6-318701, silicon once crystallized by the solid phase growth method may be laser annealed. Which method should be adopted may be determined depending on the required characteristics of the semiconductor circuit, the heat resistant temperature of the substrate, and the like.

After that, a plasma CVD method or a thermal CV method is used.
The gate insulating film 36 of silicon oxide having a thickness of 1200 Å was deposited by the D method, and the gate electrodes / wirings 37 and 38 were further formed from crystalline silicon having a thickness of 5000 Å. The gate wiring may be a metal such as aluminum, tungsten or titanium, or a silicide thereof. Furthermore, in the case of forming a metal gate electrode, the method disclosed in Japanese Patent Laid-Open No.
As disclosed in 267667 or 6-338612, its top or side may be coated with an anodic oxide. The material used to construct the gate electrode depends on
It may be determined according to the required characteristics of the semiconductor circuit, the heat resistant temperature of the substrate, and the like. (Fig. 4 (A))

After that, in self-alignment, N-type and P-type impurities are introduced into the silicon island by means such as an ion doping method, so that the N-type region 39 and the P-type region 4 are formed.
Formed 0. Then, an interlayer insulator (a silicon oxide film having a thickness of 5000Å) 41 was deposited by a known means. And
Contact holes were opened in this, and aluminum alloy wirings 41 to 44 were formed. (Fig. 4 (B))

Further, a silicon nitride film 46 having a thickness of 2000 Å is deposited thereon as a passivation film by the plasma CVD method, and the wiring 44 of the output terminal is formed thereon.
A contact hole leading to was opened. Then, an electrode 47 of an indium tin oxide coating (ITO, thickness 1000 Å) was formed by the sputtering method. ITO is a transparent conductive oxide. Then, a gold bump 48 having a diameter of about 50 μm and a height of about 30 μm was mechanically formed on the ITO electrode 47. The circuit thus obtained was cut into suitable sizes, and thus stick crystals were obtained. (Fig. 4 (C))

On the other hand, on the substrate 49 of the liquid crystal display device, the electrode 50 was formed of ITO having a thickness of 1000Å. In this embodiment, the substrate of the liquid crystal display device has a thickness of 0.3 m.
m polyethylene polyethylene file (PES) was used.
Then, the substrate 31 of the stick driver was adhered to the substrate 49 by applying pressure. At this time, the electrode 47 and the electrode 50 are electrically connected by the bump 48.
(Figure 5 (A))

Next, an adhesive 51 mixed with a thermosetting organic resin was injected into the gap between the stick crystal 31 and the substrate 49 of the liquid crystal display device. The adhesive may be applied to either surface before the stick crystal 31 and the substrate 49 of the liquid crystal display device are pressure-bonded.

Then, by treating in an oven at 120 ° C. in a nitrogen atmosphere for 15 minutes, electrical connection and mechanical adhesion between the stick crystal 31 and the substrate 49 were completed. Note that, before complete bonding, a method of testing whether electrical connection is insufficient by the method disclosed in Japanese Patent Application Laid-Open No. 7-14880 and then performing permanent bonding may be adopted. (Fig. 5 (B))

The substrate thus treated was left in a gas stream of a mixed gas of chlorine trifluoride (ClF ₃ ) and nitrogen. The flow rates of chlorine trifluoride and nitrogen were both 500 sccm. The reaction pressure was 1 to 10 Torr. The temperature was room temperature. Halides such as trifluorochlorine selectively etch silicon, but hardly etch oxides (silicon oxide or ITO), and aluminum also forms a stable oxide film on the surface, which causes a reaction at that stage. It stops, so it is not etched.

In the present embodiment, the material which may be attacked by chlorine trifluoride is the peeling layer (silicon) 32, the silicon islands 34 and 35, the gate electrodes 37 and 38, the aluminum alloy wirings 41 to 44, and the adhesive. Although it is the agent 51, chlorine trifluoride cannot reach it because there is a material such as silicon oxide on the outside except the peeling layer and the adhesive. Actually, as shown in FIG. 5C, only the peeling layer 32 was selectively etched to form the holes 52. (Fig. 5
(C))

Further, after a lapse of time, the peeling layer was completely etched, the bottom surface 53 of the base film was exposed, and the stick crystal substrate 31 could be separated from the semiconductor circuit. In the etching with fluorine trichloride, since the etching stops at the bottom surface of the base film, the bottom surface 53 was extremely flat. (FIG. 5D) In this way, formation of the semiconductor integrated circuit on one substrate of the liquid crystal display device is completed.
A liquid crystal display device is completed using the substrate thus obtained.

[Embodiment 2] This embodiment relates to a method (roll-to-roll method) for continuously forming a film-like passive matrix type liquid crystal display device.
FIG. 6 shows the production system of this embodiment. As a substrate material for obtaining a film-like liquid crystal display device, a material selected from PES (polyethylene salfile), PC (polycarbonate) and polyimide may be used. P
Since ET (polyethylene terephthalate) and PEN (polyethylene naphthalate) are polycrystalline plastics, they were not suitable for use as a liquid crystal material which is used particularly for polarized light for displaying.

In the system shown in FIG. 6, as a substrate constituting a liquid crystal electro-optical device, a flow of manufacturing a substrate provided with a color filter (lower side of the drawing) and a flow of manufacturing a counter substrate thereof (upper side of the drawing). ) And roughly divided. First, the manufacturing process of the color filter side substrate will be described.

A color filter of three colors RGB is formed on the surface of the film wound on the roll 71 by a printing method. The color filters are formed by the three sets of rolls 72. If the liquid crystal display device to be manufactured is monochrome, this step is unnecessary. (Process "color filter printing")

Further, the roll 73 is used to form an overcoating agent (planarizing film) by a printing method. The overcoat agent is for flattening the surface that is uneven due to the formation of the color filter. A resin material having a light-transmitting property may be used as a material forming the overcoat agent. (Process “overcoating agent (planarizing film) printing”) Next, by using the roll 74, row (column) electrodes are formed in a required pattern by a printing method.
The electrodes are formed by this printing method using a conductive ink. (Process "electrode formation")

Further, an alignment film is formed by a printing method by the roll 75 (step "alignment film printing"), and the alignment film is baked by passing through a heating furnace 76. (Step “Firing of Alignment Film”) Further, the surface of the alignment film is rubbed by passing through the roll 77. In this way, the alignment process is completed. (Process "rubbing")

Next, the stick crystal is mounted on the substrate by the pressure bonding device 78 (step "stick mounting"), and the adhesive is cured by passing through the heating furnace 79, and the bonding is completed. (Step “adhesive curing”) In this example, since the release layer was made of silicon as in Example 1, the chlorine trifluoride chamber 80 (exhaust differential pressure to remove chlorine trifluoride from the outside). The release layer and thus the substrate of the stick crystal is released by means of a chamber which is kept leak-proof. (Process "stick peeling"

Thereafter, spacers are sprayed on the film substrate by the spacer sprayer 81 (step "spacer spraying"), and the roll 82 is used to form a sealing material by a printing method. The sealant is for adhering the substrates facing each other and for preventing the liquid crystal from leaking between the pair of substrates. In this embodiment, the thickness of the semiconductor circuit is made thinner than that between the liquid crystal substrates so that the outside of the semiconductor integrated circuit is sealed as shown in FIG. 3 (disclosed in Japanese Patent Laid-Open No. 5-66413). There is).
(Process "sticker printing")

After that, liquid crystal is dropped by using the liquid crystal dropping device 83 to form a liquid crystal layer on the film substrate.
Thus, the color filter side substrate is completed. The above steps are continuously performed as each roll rotates. Next, a manufacturing process of the counter substrate will be described. Roll 6
A roll (62) is used to form a column (row) electrode in a predetermined pattern on the film substrate sent from 1. (Step “electrode formation”) Further, by the roll 63,
Alignment film is formed by printing method (process "alignment film printing"),
The alignment film is baked and solidified by passing through the heating furnace 64. (Process "Firing of alignment film")

After that, the film substrate is passed through a roll 65 for orientation treatment. (Step "rubbing") Next, the stick crystal is mounted on the substrate by the pressure bonding device 66 (step "stick mounting"), and the adhesive is cured by passing through the heating furnace 67. (Step “Adhesive curing”) Further, the chlorine trifluoride chamber 68 separates the stick crystal substrate. The conditions and the like at this time were the same as in Example 1. (Process "stick peeling"

The film substrate that has undergone the above-mentioned treatment is roll 6
It is sent to the next roll 84 via 9. Roll 84
Then, the color filter side substrate and the counter substrate are bonded together to form a cell. (Process “cell assembly”) After that, heating furnace 8
By heating in 5, the sealing material is hardened and the bonding of the substrates is completed. (Step “Curing the sealant”) Further, the film is cut into a predetermined size by the cutter 86, and the film-shaped liquid crystal display device is completed. (Process "division")

[0050]

According to the present invention, various variations are possible with respect to the type, thickness and size of the substrate of the display device. For example, as shown in Example 2, it is possible to obtain an extremely thin film type liquid crystal display device.
In this case, the display device may be attached to the curved surface. Further, as a result of relaxing the restrictions on the type of substrate, a light material having high impact resistance such as a plastic substrate can be used, and portability is also improved.

Further, since the area occupied by the driver circuit is small, the degree of freedom in arranging the display device and other devices is increased. Typically, the driver circuit can be pushed into a region with a width of several mm around the display surface, so that the display device itself is extremely simple and has a wide range of fashionability, and its application range is also varied. spread. Thus, the industrial value of the present invention is extremely high.

[Brief description of drawings]

FIG. 1 shows a cross-sectional structure of a display device according to the present invention.

FIG. 2 shows an outline of a method for manufacturing a display device according to the present invention.

FIG. 3 shows a cross-sectional structure of an example display device manufactured according to the present invention.

FIG. 4 shows a manufacturing process of a stick crystal used in the present invention.

FIG. 5 shows a process of adhering a stick crystal to a substrate.

FIG. 6 shows a continuous manufacturing system of a film liquid crystal display device.

[Explanation of symbols]

1 ... Substrate of liquid crystal display device 2 ... Semiconductor integrated circuit 3 ... Adhesive 4 ... Electrode of liquid crystal display device 5 ... Electrode of semiconductor integrated circuit 6 ... Bump 7 ... Driver Circuit part 8 ... Matrix part 9 ... Conductive particles 11 ... Underlayer film 12 ... N-channel type TFT 13 ... P-channel type TFT 14 ... Interlayer insulator 15 ... Passivation film 16 ... Counter substrate of liquid crystal display device 17 ... Sealing agent 18 ... Liquid crystal material 21 ... Substrate forming stick crystal 22 ... Semiconductor integrated circuit 23, 24 Stick crystal 25, 27 Liquid crystal Substrate 26, 28 of display device Surface 29, 30 on which wiring pattern is formed Driver circuit 26 transferred onto substrate of liquid crystal display device 26 ... Shape of wiring pattern Surface opposite to the formed surface 31 ... Stick crystal forming substrate 32 ... Release layer 33 ... Underlayer film 34, 35 Silicon island 36 ... Gate insulating film 37, 38 Gate electrode 39 ... N type region 40 ... P type region 41 ... Interlayer insulator 42-44 Aluminum alloy wiring 46 ... Passivation film 47 ... Conductive oxide film 48 ... Bump 49 ... -Substrate of liquid crystal display device 50 ... Electrode of liquid crystal display device 51 ... Adhesive 52 ... Hole 53 ... Bottom surface of base film

Front Page Continuation (72) Inventor Yasuyuki Arai 398 Hase, Atsugi City, Kanagawa Semiconductor Energy Research Institute Co., Ltd.

Claims (4)

[Claims] 1. A first electric wiring of a plurality of transparent conductive films formed on a first substrate and extending in a first direction; and a thin film transistor connected to the first electric wiring, A first semiconductor integrated circuit extending in a second direction substantially perpendicular to the first direction, and second electric wirings of a plurality of transparent conductive films extending in the second direction formed on the second substrate. A second semiconductor integrated circuit connected to the second electric wiring, having a thin film transistor, and extending in the first direction,
In the method for manufacturing a display device, in which the substrate is arranged so that the first electric wiring and the second electric wiring face each other, the first and the first electric wirings formed on a supporting substrate with a peeling layer interposed therebetween. The step of adhering the semiconductor integrated circuit of No. 2 to the first and second substrates, respectively, and the step of treating the semiconductor integrated circuit with a gas containing halogen to remove the peeling layer. And a step of peeling the semiconductor integrated circuit from each supporting substrate. 2. A plurality of first electric wirings formed on a first substrate and extending in a first direction, and a thin film transistor connected to the first electric wirings, the first electric wirings being provided in the first direction. A first semiconductor integrated circuit extending in a second direction substantially perpendicular to the first electric wiring; a plurality of second electric wirings extending in the second direction formed on the first substrate; A second semiconductor integrated circuit connected to each other, having a thin film transistor and extending in the first direction, and a second substrate having a transparent conductive film on a surface thereof. In the method for manufacturing a display device, in which the substrate is arranged so that the electric wiring of No. 2 and the transparent conductive film of the second substrate face each other, the first and the first layers formed on the supporting substrate via a peeling layer are provided. Bonding the semiconductor integrated circuit of No. 2 to the first substrate; By the gas, by removing the peeling layer by treating method for manufacturing a display device characterized by a step of removing the first and second semiconductor integrated circuits from each supporting substrate. 3. The peeling layer according to claim 1 or 2, wherein the peeling layer is formed of a semiconductor containing silicon as a main component, and the halogen-containing gas contains at least chlorine trifluoride. Method for manufacturing display device. 4. The display device according to claim 1, wherein at least the first substrate is plastic.