JP2000195419A - Manufacture of plasma display panel and transfer film - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing method of a plasma display panel having an excellent manufacturing efficiency and an excellent workability compared with a conventional manufacturing method and allowing formation of high accurate pattern and a transfer film preferably used for a manufacturing of a plasma display panel. SOLUTION: A photosensitive film forming material layer 23 is formed on a non-photosensitive film forming material layer 21 to form a resist film 31 thereon. The resist film 31 is exposed and developed to actualize a resist pattern. The film forming material layers are etched to form a pattern corresponding to the resist pattern to bake this pattern.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a plasma display panel and a transfer film suitably used in the method.

[0002]

2. Description of the Related Art In recent years, a plasma display has attracted attention as a flat fluorescent display. FIG. 1 shows an AC type plasma display panel (hereinafter also referred to as “PDP”).
It is a schematic diagram which shows the cross-sectional shape of. In FIG. 1, reference numerals 1 and 2 denote glass substrates which are arranged to face each other, and reference numeral 3 denotes a partition. 4 is a transparent electrode fixed on the glass substrate 1, 5 is a bus electrode formed on the transparent electrode for the purpose of reducing the resistance of the transparent electrode, 6 is an address electrode fixed on the glass substrate 2, and 7 is a cell electrode. The retained phosphor, 8 is a dielectric layer formed on the surface of the glass substrate 1 so as to cover the transparent electrode 4 and the bus electrode 5, and 9 is formed on the surface of the glass substrate 2 so as to cover the address electrode 6. Dielectric layer,
Reference numeral 10 denotes a protective film made of, for example, magnesium oxide.
In a direct current type PDP, a resistor is usually provided between an electrode terminal (anode terminal) and an electrode lead (anode lead). Further, in order to improve the contrast of the plasma display panel, a red, green, or blue color filter or a black matrix may be provided between the dielectric layer 8 and the protective film 10 or the like.

[0003] As a method for producing such electrodes, resistors, phosphors, color filters and black matrices of a plasma display panel, (1) a non-photosensitive film forming material composition is screen-printed on a substrate to form a pattern. And (2) forming a film of a photosensitive film-forming material composition on a substrate, irradiating the film with ultraviolet rays through a photomask, and developing the film. There is known a photolithography method in which a pattern is left thereon and baked.

[0004]

However, in the screen printing method, the demand for the positional accuracy of the pattern becomes very severe with the increase in the size and definition of the panel.
There is a problem that normal printing cannot cope. Also,
In the photolithography method, when a pattern having a thickness of 10 to 100 μm is formed in a single exposure and development process, the sensitivity in the depth direction of the film forming material layer is insufficient, and the edge is not necessarily sharp. A high-definition pattern was not obtained.

The present invention has been made based on the above circumstances. A first object of the present invention is to provide a method for manufacturing a plasma display panel having a method for forming a novel electrode, resistor, phosphor, color filter and black matrix. A second object of the present invention is to provide a method of manufacturing a plasma display panel capable of forming a pattern with high dimensional accuracy. A third object of the present invention is to provide a method of manufacturing a plasma display panel which is capable of substantially improving workability as compared with a conventional manufacturing method and has excellent manufacturing efficiency. A fourth object of the present invention is to provide a transfer film suitably used for manufacturing a plasma display panel.

[0006]

According to the first method of manufacturing a plasma display panel of the present invention (hereinafter, also referred to as "PDP manufacturing method"), a plasma display panel is formed on a supporting film.
A first film-forming material layer containing no radiation polymerization initiator (hereinafter, also referred to as “film-forming material layer (a)”) is transferred onto a substrate, and radiation polymerization is started on the first film-forming material layer. Forming a second film-forming material layer containing an agent (hereinafter also referred to as “film-forming material layer (b)”), forming a resist film on the second film-forming material layer, Exposure, forming a latent image of the resist pattern, developing the resist film to reveal the resist pattern, etching the film forming material layer to form a pattern of the film forming material layer corresponding to the resist pattern And forming at least one of a partition, an electrode, a resistor, a phosphor, a color filter, and a black matrix by a method including a step of forming and baking the pattern.

[0007] The transfer film of the present invention is characterized in that a laminated film of a first film forming material layer and a second film forming material layer is formed on a support film. In the second method for manufacturing a plasma display of the present invention using the transfer film (hereinafter, also referred to as “PDP manufacturing method”), a laminated film formed on a support film is transferred onto a substrate, and Forming a resist film, exposing the resist film to exposure, forming a latent image of the resist pattern, developing the resist film to reveal the resist pattern,
Forming a pattern of the film-forming material layer corresponding to the resist pattern by etching the film-forming material layer, a method including a step of baking the pattern, a partition, an electrode,
It is characterized in that at least one of a resistor, a phosphor, a color filter and a black matrix is formed.

[0008] Further, the transfer film of the present invention has a laminated film of a resist film, a second film forming material layer, and a first film forming material layer formed on a support film. Is also good. In the method for manufacturing a plasma display panel of the present invention using the transfer film (hereinafter, also referred to as “PDP manufacturing method”), a laminated film formed on a supporting film is transferred onto a substrate to form the laminated film. Exposure treatment of the resist film to form a latent image of the resist pattern,
Developing the resist film to reveal a resist pattern, etching the film forming material layer to form a pattern of the film forming material layer corresponding to the resist pattern, and baking the pattern. And at least one of a partition, an electrode, a resistor, a phosphor, a color filter, and a black matrix.

Preferred embodiments of the production method and the transfer film of the present invention are as follows. (1) The film-forming material layer (a) has a plurality of film-forming material layers having different solubility in an etching solution. It must be a laminate. (2) Film-forming material layer (a) formed on support film
Is transferred n times (however, n is an integer of 2 to 10) to form a film-forming material layer (a), which is a laminate composed of n-layer film-forming material layers, on the substrate. . (3) n layers formed on the support film (where n = 2
Is an integer of 10 to 10. A) forming a film-forming material layer (a), which is the layered body, on a substrate by batch-transferring the layered material formed of the film-forming material layer (a). (4) A film-forming material layer (b) formed on a support film
To form a film-forming material layer (b) on the film-forming material layer (a). (5) Forming a resist film on the film forming material layer (b) by transferring the resist film formed on the support film. (6) The etching solution is an alkaline solution. (7) The developing solution used for the developing process and the etching solution used for the etching process are the same solution.

[0010]

In the manufacturing method of the present invention, the film forming material layer comprises
Paste-like film forming material composition in which inorganic powder is dispersed (composition for forming a partition, composition for forming an electrode, composition for forming a resistor, composition for forming a phosphor, composition for forming a color filter, black Matrix-forming composition) is not formed by directly applying the composition on a rigid substrate,
It is formed by coating on a flexible support film. For this reason, as a method for applying the paste-like composition, an application method using a roll coater or the like can be employed, whereby a film-forming material layer having a large film thickness and excellent film thickness uniformity ( For example, 10μm ± 1μ
m) can be formed on a support film. Then, the film forming material layer thus formed can be reliably formed on the substrate by a simple operation of collectively transferring the film forming material layer to the surface of the substrate. Therefore, according to the manufacturing method of the present invention, it is possible to improve the process (higher efficiency) in the process of forming the film forming material layer and to improve the quality of the formed pattern (higher definition). . Furthermore, in the manufacturing method of the present invention, the upper layer portion of the film forming material layer has radiation sensitivity. This can prevent a phenomenon in which only the upper layer portion is excessively etched during pattern etching, and a higher definition pattern can be formed.

[0011]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in detail. Method of Manufacturing PDP In the method of manufacturing PDP, [1] a step of transferring a film-forming material layer (a), [2] a step of forming a film-forming material layer (b), [3] a step of forming a resist film, and [4] ] Exposure step of the resist film, [5] development step of the resist film, [6] etching step of the film forming material layer, [7] baking step of the film forming material layer pattern, partition walls, electrodes, resistors, phosphors, Form a color filter or black matrix.

<Step of Transferring Film Forming Material Layer (a)> FIGS. 2 and 3 are schematic sectional views showing an example of a step of forming a film forming material layer in the manufacturing method of the present invention. In FIG. 2A, reference numeral 11 denotes a glass substrate. In the production method of the present invention, a transfer film is used, and the film-forming material layer (a) constituting the transfer film is transferred to the surface of the substrate.
Here, the transfer film has a support film and a film-forming material layer (a) formed on the support film, and a protective film layer is provided on the surface of the film-forming material layer (a). It may be. The support film in the transfer film and a film-forming material composition constituting the film-forming material layer (a) (hereinafter, also referred to as a “film-forming material composition (a)”) have the structure of a transfer film of the present invention described later. It is the same as the component.

An example of the transfer step is as follows. After the protective film layer of the transfer film used as necessary is peeled off, the surface of the film forming material layer (a) 21 is brought into contact with the surface of the glass substrate 11 as shown in FIG. After the transfer films 20 are overlapped as described above and the transfer film 20 is thermocompression-bonded with a heating roller or the like, the support film 22 is peeled off from the film forming material layer 21.
As a result, as shown in FIG.
The film-forming material layer (a) 21 is transferred to the surface of the substrate and comes into close contact with it. Here, as the transfer conditions, for example, the surface temperature of the heating roller is 80 to 140 ° C., the roll pressure by the heating roller is 1 to 5 kg / cm ² , and the moving speed of the heating roller is 0.1 to 10.0 m / min. Can be shown. Also,
The glass substrate may be preheated, and the preheating temperature may be, for example, 40 to 100 ° C.

<Step of Forming Film Forming Material Layer (b)> In this step, as shown in FIG. 2D, a radiation-sensitive film is formed on the surface of the transferred film forming material layer (a) 21. A material layer (b) 23 is formed. This film forming material layer (b) 23
The film-forming material composition (hereinafter also referred to as “film-forming material composition (b)”) is the same as a component of the transfer film of the present invention described later. Film forming material layer (b) 2
3 is screen printing, roll coating, spin coating,
It can be formed by applying the film-forming material composition (b) by various methods such as a casting application method and then drying the coating film. Further, the film forming material layer (b) formed on the support film may be formed by transferring the film forming material layer (b) to the surface of the film forming material layer (a) 21. According to such a formation method, it is possible to improve the process (increase the efficiency) in the process of forming the film forming material layer (b), and to achieve uniformity of the film thickness of the formed pattern. The thickness of the film-forming material layer (b) 23 is usually 1 to 10
0 μm, preferably 2 to 50 μm.

<Step of Forming Resist Film> In this step, as shown in FIG. 2E, a film forming material layer (b) 2
A resist film 31 is formed on the surface of the substrate 3. The resist constituting the resist film 31 may be either a positive resist or a negative resist, and the specific composition thereof will be described later. The resist film 31 can be formed by applying a resist by various methods such as a screen printing method, a roll coating method, a spin coating method, and a casting coating method, and then drying the coating film. Further, the resist film formed on the support film is formed into a film forming material layer (b) 23.
It may be formed by transferring to the surface of the substrate. According to such a formation method, it is possible to improve the process (higher efficiency) in the process of forming the resist film, and to achieve uniformity of the thickness of the formed pattern. The thickness of the resist film 31 is usually 0.1 to 40 μm.
m, preferably 0.5 to 20 μm.

<Exposure Step of Resist Film> In this step, as shown in FIG. 3F, the film forming material layer (b) 2
The surface of the resist film 31 formed on 3 is selectively irradiated (exposed) with radiation such as ultraviolet rays via an exposure mask M to form a latent image of a resist pattern. At this time, the radiation-sensitive film forming material layer (b) 23 is also exposed through the resist film 31 to form a latent image of a pattern. In the figure, MA and MB are a light transmitting part and a light shielding part in the exposure mask M, respectively. Here, the radiation irradiating apparatus is not particularly limited, such as an ultraviolet irradiating apparatus used in the photolithography method, an exposure apparatus used in manufacturing a semiconductor and a liquid crystal display device.

<Resist Film Developing Step> In this step, a resist pattern (latent image) is made visible by developing the exposed resist film. Here, the development processing conditions include the type, composition, and concentration of the developer, the development time, the development temperature, and the development method (for example, the immersion method, the oscillating method, the shower method,
(Spray method, paddle method), a developing device, and the like can be appropriately selected. By this development step, as shown in FIG. 3G, the resist remaining portion 35A and the resist removing portion 35A
A resist pattern 35 (a pattern corresponding to the exposure mask M) composed of B and B is formed. The resist pattern 35 functions as an etching mask in the next step (etching step), and the constituent material (photocured resist) of the resist remaining portion 35A is the film forming material layer (a) 21 and the film forming material. It is necessary that the dissolution rate in the etching liquid is lower than that of the constituent material of the layer (b) 23.

<Etching Step of Film Forming Material Layer> In this step, the film forming material layer is etched to form a pattern of the film forming material layer corresponding to the resist pattern. That is, as shown in FIG. 3H, a portion of the film forming material layer (a) 21 and the film forming material layer (b) 23 corresponding to the resist removal portion 35B of the resist pattern 35 is dissolved in the etching solution. To be selectively removed.
FIG. 3H shows a state during the etching process. When the etching process is further continued, the surface of the glass substrate is exposed at portions corresponding to the resist-removed portions in the film forming material layers (a) 21 and (b) 23 as shown in FIG. I do. As a result, a film forming material layer pattern 25 composed of the material layer remaining portion 25A and the material layer removing portion 25B is formed. Here, as the etching processing conditions, the type, composition, concentration, processing time,
A processing temperature, a processing method (for example, an immersion method, a rocking method, a shower method, a spray method, and a paddle method), a processing apparatus, and the like can be appropriately selected. In addition, by selecting the type of the resist film and the film forming material layer so that the same solution as the developing solution used in the developing process can be used as the etching solution, the developing process and the etching process are continuously performed. The manufacturing efficiency can be improved by simplifying the process. Here, the resist remaining portion 35A constituting the resist pattern 35 is gradually dissolved during the etching process, and the film forming material layer pattern 2
It is preferable that 5 is completely removed at the stage when it is formed (at the end of the etching process). Even if a part or all of the resist remaining portion 35A remains after the etching process, the resist remaining portion 35A is removed in the next baking step.

<Firing Step of Film Forming Material Layer Pattern> In this step, the film forming material layer pattern 25 is baked to form partitions, electrodes, resistors, phosphors, color filters or black matrices. As a result, the organic substance in the remaining portion of the material layer is burned off, and an inorganic layer such as a metal layer and a phosphor layer is formed. As shown in FIG.
Pattern 4 of partition, electrode, resistor, phosphor, color filter or black matrix on the surface of glass substrate
Thus, a panel material 50 formed with 0 can be obtained. Here, the temperature of the sintering treatment is as follows.
The temperature must be a temperature at which the organic substance in 5A is burned off, and is usually 400 to 600 ° C. The firing time is usually set to 10 to 90 minutes.

In the method of manufacturing PDP, a film forming material layer (b) is formed on a support film, and a film forming material layer (a) is formed on the film forming material layer (b) by lamination. Further, the transfer film of the present invention is used. Here, when forming the film forming material layers (a) and (b), a roll coater or the like can be used, whereby a laminated film having excellent uniformity in film thickness is formed on the supporting film. can do. The manufacturing steps include: [1] a step of transferring a laminated film of the film forming material layer (b) and the film forming material layer (a), [2] a step of forming a resist film, [3] an exposing step of the resist film, [4] a step of developing a resist film, [5] an etching step of a film-forming material layer, and [6] a baking step of a film-forming material layer pattern, and the steps [2], [3], [4], and [5]. ] And [6]
May be the same as the conditions in each of the steps [3], [4], [5], [6] and [7] in the PDP manufacturing method. According to the method of manufacturing a PDP, a film forming material layer (a) and a film forming material layer (b)
Are collectively transferred onto the substrate, so that the manufacturing efficiency can be further improved by simplifying the process.

In the method of manufacturing PDP, in the method of manufacturing PDP, a resist film is formed on a support film, a film forming material layer (b) is formed on the resist film, and further, the film forming material layer (b) is formed. )), The transfer film of the present invention having the film-forming material layer (a) laminated thereon is used. Here, the resist film,
When forming the film-forming material layers (a) and (b), a roll coater or the like can be used, whereby a laminated film having excellent uniformity in film thickness can be formed on the support film. it can. The manufacturing steps include: [1] a step of transferring a laminated film of a resist film, a film forming material layer (b) and a film forming material layer (a), [2] a step of exposing a resist film, and [3] a development of a resist film. And [4] a film forming material layer etching step and [5] a film forming material layer pattern baking step. The steps [2], [3], [4] and [5] are respectively performed by a PDP. [4] in the method for producing
The conditions in each of the steps [5], [6] and [7] may be the same. According to the method of manufacturing a PDP, the resist film, the film forming material layer (b), and the film forming material layer (a) are collectively transferred onto the substrate. Can be further improved. As another method for producing a PDP, there is a method using a transfer film in which a resist film and a film-forming material layer (b) are laminated on a support film. In this case, the film-forming material layer (a) is transferred onto the substrate by using another transfer film having the film-forming material layer (a) formed on the support film, and the film-forming material layer (a) is The film forming material layer (b) and the resist film can be transferred collectively.

Preferred Embodiment In the manufacturing method of the present invention, it is preferable to transfer and form a laminate comprising a plurality of film forming material layers (a) having different solubilities to an etching solution on a substrate. By performing an etching process on such a stacked body, anisotropy in the depth direction with respect to the etching is generated, so that a material layer remaining portion having a rectangular shape or a preferable cross-sectional shape close to a rectangle can be formed. The number of layers of the film forming material layer (a) is usually 10 or less, and preferably 2 to 5.
Here, a method for forming a laminate comprising n layers of the film forming material layer (a) on the substrate includes the following steps: (1) The film forming material layer (a) (one layer) formed on the support film is n times And (2) a method of batch-transferring a layered body composed of the n-layered film-forming material layers (a), but from the viewpoint of simplification of the transfer step, the above-mentioned method (2) may be used. Is preferred. Further, if necessary, the radiation-sensitive film-forming material layer (b) may be a laminate composed of a plurality of film-forming material layers (b) having different solubility in an etching solution.

Materials and Conditions Used In the following, the materials used in each of the above steps and various conditions will be described. <Substrate> As a substrate material, for example, glass, silicon,
It is a plate-like member made of an insulating material such as polycarbonate, polyester, aromatic amide, polyamide imide, and polyimide. The surface of the plate-like member may be subjected to a chemical treatment with a silane coupling agent or the like as necessary; a plasma treatment; a thin film forming treatment by an ion plating method, a sputtering method, a gas phase reaction method, a vacuum deposition method, or the like. Such an appropriate pretreatment may be performed.

<Transfer Film> The transfer film used in the method for producing a PDP of the present invention comprises a support film and a film-forming material layer (a) formed on the support film. A protective film layer may be provided on the surface of the layer (a). The transfer film can be formed by applying the film-forming material composition (a) on a support film, drying the coating film and removing a part or all of the solvent. As the support film, the film-forming material composition (a) and the protective film, the same components as the components of the transfer film of the present invention described later can be used. The transfer film used in the method of manufacturing the PDP of the present invention and the transfer film of the present invention is the transfer film of the present invention described later.

<Resist Film (Resist Composition)> In the manufacturing method of the present invention, a resist film is formed on the film forming material layer (b) transferred onto the substrate, and the resist film is exposed and developed. Is performed, a resist pattern is formed on the film forming material layer (b). Examples of the resist composition used to form the resist film include (1) an alkali-developable radiation-sensitive resist composition,
(2) an organic solvent-developable radiation-sensitive resist composition,
(3) An aqueous development type radiation-sensitive resist composition can be exemplified. Hereinafter, these resist compositions will be described.

(1) Radiation-sensitive resist composition of alkali development type The radiation-sensitive resist composition of alkali development type contains an alkali-soluble resin and a radiation-sensitive component as essential components. Examples of the alkali-soluble resin constituting the alkali-developable radiation-sensitive resist composition include the alkali-soluble resins described below as examples constituting the binder resin of the film-forming material composition. Examples of the radiation-sensitive component constituting the alkali-developable radiation-sensitive resist composition include (A) a combination of a polyfunctional monomer and a radiation polymerization initiator, and (B) a melamine resin and an acid to be formed by irradiation with radiation. Preferred examples include a combination with a photoacid generator, and the above (a)
Of the combinations, a combination of a polyfunctional (meth) acrylate and a radiation polymerization initiator is particularly preferred. Specific examples of the polyfunctional monomer and the radiation polymerization initiator that constitute the radiation-sensitive component are exemplified as the polyfunctional monomer and the radiation polymerization initiator contained in the film-forming material composition (b) described below. Things can be mentioned.

The content of the radiation-sensitive component in the alkali-developable radiation-sensitive resist composition is usually 1 to 300 parts by weight, preferably 10 to 200 parts by weight, per 100 parts by weight of the alkali-soluble resin. . Further, the alkali-developable radiation-sensitive resist composition contains an organic solvent as appropriate in order to impart good film-forming properties.

(2) Radiation-sensitive resist composition of the organic solvent development type:
It comprises at least one selected from natural rubber, synthetic rubber, and a cyclized rubber obtained by cyclizing them, and an azide compound as essential components. Specific examples of the azide compound constituting the organic solvent development type radiation-sensitive resist composition include 4,4′-diazidobenzophenone,
4'-diazidodiphenylmethane, 4,4'-diazidostilbene, 4,4'-diazidochalcone, 4,4'-
Examples thereof include diazidobenzalacetone, 2,6-di (4′-azidobenzal) cyclohexanone, and 2,6-di (4′-azidobenzal) -4-methylcyclohexanone. These may be used alone or in combination of two or more. Can be used in combination. The organic solvent-developable radiation-sensitive resist composition generally contains an organic solvent in order to impart good film-forming properties.

(3) Aqueous development type radiation-sensitive resist composition: The aqueous development type radiation-sensitive resist composition is, for example, a water-soluble resin such as polyvinyl alcohol and at least one selected from a diazonium compound and a dichromate compound. And a seed as an essential component.

The resist composition used in the production method of the present invention contains, as optional components, a development accelerator, an adhesion aid, an antihalation agent, a storage stabilizer, an antifoaming agent, an antioxidant, an ultraviolet absorber, and a filler. And various additives such as phosphors, pigments and dyes.

<Exposure Mask> The exposure pattern of the exposure mask M used in the exposure process of the resist film varies depending on the material, but is generally 10 to 500 μm.
It is a stripe of width.

<Developer> The developer used in the step of developing the resist film can be appropriately selected according to the type of the resist film (resist composition). In particular,
An alkali developer can be used for a resist film made of an alkali-developable radiation-sensitive resist composition, and an organic solvent developer can be used for a resist film made of an organic solvent-type radiation-sensitive resist composition. An aqueous developer can be used for the resist film made of the development-type radiation-sensitive resist composition.

The active components of the alkaline developer include, for example, lithium hydroxide, sodium hydroxide, potassium hydroxide, sodium hydrogen phosphate, diammonium hydrogen phosphate, dipotassium hydrogen phosphate, disodium hydrogen phosphate,
Ammonium dihydrogen phosphate, potassium dihydrogen phosphate, sodium dihydrogen phosphate, lithium silicate, sodium silicate, potassium silicate, lithium bicarbonate, sodium bicarbonate, potassium bicarbonate, lithium carbonate, sodium carbonate, potassium carbonate , Lithium borate, sodium borate, potassium borate, inorganic alkaline compounds such as ammonia; tetramethylammonium hydroxide, trimethylhydroxyethylammonium hydroxide,
Examples thereof include organic alkaline compounds such as monomethylamine, dimethylamine, trimethylamine, monoethylamine, diethylamine, triethylamine, monoisopropylamine, diisopropylamine, and ethanolamine. The alkali developer used in the resist film developing step can be adjusted by dissolving one or more of the above alkaline compounds in water or the like. Here, the concentration of the alkaline compound in the alkaline developer is usually 0.001 to 10% by weight, preferably 0.01 to 5% by weight. In addition,
After the development process with an alkali developer,
A washing process is performed.

Specific examples of the organic solvent developer include organic solvents such as toluene, xylene, and butyl acetate. These can be used alone or in combination of two or more. After the development with the organic solvent developer, rinsing with a poor solvent is performed as necessary. Specific examples of the aqueous developer include water,
Alcohol and the like can be mentioned.

<Etching solution> The etching solution used in the etching step of the film forming material layer is preferably an alkaline solution. Thereby, the alkali-soluble resin contained in the film forming material layer can be easily dissolved and removed. Since the inorganic powder contained in the film-forming material layer is uniformly dispersed in the alkali-soluble resin, the inorganic powder is dissolved by dissolving the alkali-soluble resin serving as the binder resin with an alkaline solution, and then washed. Is also removed at the same time. Here, examples of the alkaline solution used as the etching solution include a solution having the same composition as the developing solution. When the etching solution is the same solution as the alkali developing solution used in the developing step, the developing step and the etching step can be performed continuously, and the manufacturing efficiency is reduced by simplifying the steps. Improvement can be achieved. After the etching treatment with the alkaline solution is performed, a water washing treatment is usually performed.

Further, an organic solvent capable of dissolving the binder resin of the film forming material layer can be used as the etching solution. After the etching with the organic solvent is performed, a rinsing with a poor solvent is performed as necessary.

Transfer Film The transfer film of the present invention comprises a support film, a film-forming material layer (b) formed on the support film, And a film-forming material layer (a) formed on the layer (b), and a protective film layer may be provided on the surface of the film-forming material layer (a). The transfer film used in the method of manufacturing a PDP includes a support film, a resist film formed on the support film, a film-forming material layer (b) formed on the resist film, And a film forming material layer (a) formed on the forming material layer (b), and a protective film layer may be provided on the surface of the film forming material layer (a).

<Supporting Film> The supporting film constituting the transfer film is preferably a resin film having heat resistance and solvent resistance and having flexibility. When the support film has flexibility, the paste composition can be applied by a roll coater, and the film forming material layer can be stored and supplied in a rolled state. As the resin forming the support film,
For example, polyethylene terephthalate, polyester, polyethylene, polypropylene, polystyrene, polyimide, polyvinyl alcohol, polyvinyl chloride, fluorine-containing resins such as polyfluoroethylene, nylon, cellulose and the like can be mentioned. The thickness of the support film is, for example, 20 to 100 μm. In addition, it is preferable that the surface of the support film is subjected to a release treatment. Thereby, in the above-described transfer step, the operation of peeling the support film can be easily performed.

<Film-forming material layer (a)> The film-forming material layer (a) constituting the transfer film is a paste-like non-photosensitive film containing inorganic powder, a binder resin and a solvent as essential components. It can be formed by applying the forming material composition (a) on a film forming material layer (b) described later, drying the coating film and removing a part or all of the solvent. The film-forming material composition (a) used for producing the transfer film is a paste-like composition containing (1) an inorganic powder, (2) a binder resin, and (3) a solvent. .

(1) Inorganic powder Inorganic powder used in the film-forming material composition (a) of the present invention
Depends on the type of forming material. Used for partition wall forming material
As the inorganic powder used, low melting glass frit is listed.
I can do it. Specific examples include zinc oxide and oxide
Boron, silicon oxide (ZnO-B_TwoO_Three-SiO
_TwoSystem), lead oxide, boron oxide, silicon oxide system (PbO
-B_TwoO_Three-SiO_TwoSystem), lead oxide, boron oxide, oxidation
Silicon, aluminum oxide (PbO-B_TwoO_Three-SiO
_Two-Al_TwoO_ThreeSystem), lead oxide, zinc oxide, boron oxide,
Silicon oxide (PbO-ZnO-B_TwoO_Three-SiO
_TwoSystem), bismuth oxide, boron oxide, silicon oxide system
(PbO-B_TwoO_Three-SiO_TwoSystem), bismuth oxide, acid
Boron oxide, silicon oxide, aluminum oxide (PbO-
B_TwoO_Three-SiO_Two-Al_TwoO _ThreeSystem)
Wear. Also, add alumina or the like as a filler as appropriate.
May be. As inorganic powder used in electrode forming materials
Is Ag, Au, Al, Ni, Ag-Pd alloy, Cu,
Cr and the like can be mentioned. Used for resistor forming material
As the inorganic powder to be used, RuO_TwoTo mention
it can. The inorganic powder used for the phosphor forming material is red
Y for_TwoO_Three:EU³⁺, Y_TwoSiO_Five:EU³⁺, Y_ThreeAl_FiveO₁₂:EU³⁺, Y
VO_Four:EU³⁺, (Y, Gd) BO_Three:EU³⁺, Zn_Three(PO_Four)_Two: Mn etc. for green
As Zn_TwoSiO_Four: Mn, BaAl₁₂O₁₉: Mn, BaMgAl₁₄O_{twenty three}: Mn,
LaPO_Four: (Ce, Tb), Y_Three(Al, Ga)_FiveO₁₂: For Tb etc. for blue color
Is Y_TwoSiO_Five: Ce, BaMgAl_TenO₁₇:EU²⁺, BaMgAl₁₄O_{twenty three}:EU ²⁺,
(Ca, Sr, Ba)_Ten(PO_Four)₆Cl_Two:EU²⁺, (Zn, Cd) S: Ag etc.
Can be Used for color filter forming material
Inorganic powder is Fe for red_TwoO_Three, Pb_ThreeO_FourGreen
Cr for use_TwoO_Three2 (Al_TwoNa_TwoSi
_ThreeO_Ten) ・ Na_TwoS_Four). Black bear
The inorganic powder used for the matrix forming material includes M
metals such as n, Fe, Cr, and CuO-Cr_TwoO_Three, Cu
O-Fe_TwoO_Three-Mn_TwoO_Three, CuO-Cr_TwoO_Three-Mn
_TwoO_Three, CoO-Fe_TwoO_Three−Cr_TwoO_ThreeComplex oxides such as
Can be mentioned. Note that electrodes, resistors, phosphors,
Color filter and black matrix forming material
Used for partition wall forming material
A low melting glass frit may be added for use.

(2) Binder Resin As the binder resin used in the film-forming material composition (a), various resins can be used, and an alkali-soluble resin is contained in a proportion of 30 to 100% by weight. It is particularly preferable to use a resin that has a high viscosity. Here, "alkali soluble"
The term “soluble” refers to a property of being dissolved by the above-described alkaline etching solution and having such solubility that an intended etching process is performed. Specific examples of such alkali-soluble resins include, for example, (meth) acrylic resins, hydroxystyrene resins, novolak resins, polyester resins, and the like. Among such alkali-soluble resins, particularly preferred are a copolymer of the following monomer (a) and monomer (b), or a copolymer of monomer (a), monomer (b) and monomer (c): Copolymers can be mentioned.

Monomers (A): acrylic acid, methacrylic acid, maleic acid, fumaric acid, crotonic acid, itaconic acid,
Carboxyl group-containing monomers such as citraconic acid, mesaconic acid, cinnamic acid, mono (2- (meth) acryloyloxyethyl succinate), ω-carboxy-polycaprolactone mono (meth) acrylate; (meth) acrylic acid 2 -Hydroxy group-containing monomers such as -hydroxyethyl, 2-hydroxypropyl (meth) acrylate and 3-hydroxypropyl (meth) acrylate; and phenolic hydroxyl groups such as o-hydroxystyrene, m-hydroxystyrene and p-hydroxystyrene Alkali-soluble functional group-containing monomers represented by monomers and the like. Monomer (b): methyl (meth) acrylate, (meth)
(Meth) acrylates other than the monomer (a) such as ethyl acrylate, butyl (meth) acrylate, benzyl (meth) acrylate, glycidyl (meth) acrylate, and dicyclopentanyl (meth) acrylate;
Aromatic vinyl monomers such as styrene and α-methylstyrene; and monomers copolymerizable with monomers (a) represented by conjugated dienes such as butadiene and isoprene. Monomer (c): A polymerizable polymer such as a (meth) acryloyl group is attached to one end of a polymer chain such as polystyrene, poly (methyl) methacrylate, ethyl poly (meth) acrylate, and benzyl poly (meth) acrylate. Macromonomers represented by macromonomers having a saturated group:

The content ratio of the binder resin in the film forming material composition (a) is based on 100 parts by weight of the inorganic powder.
Usually, it is 1 to 500 parts by weight, preferably 5 to 100 parts by weight.

(3) Solvent The solvent constituting the film-forming material composition (a) is contained in order to impart appropriate fluidity or plasticity and good film-forming properties to the film-forming material composition (a). Is done. The solvent constituting the film forming material composition (a) is not particularly limited, and examples thereof include ethers, esters, ether esters, ketones, ketone esters, amides,
Examples include amide esters, lactams, lactones, sulfoxides, sulfones, hydrocarbons, and halogenated hydrocarbons. Specific examples of such a solvent include tetrahydrofuran, anisole, dioxane,
Ethylene glycol monoalkyl ethers, diethylene glycol dialkyl ethers, propylene glycol monoalkyl ethers, propylene glycol dialkyl ethers, acetates, hydroxyacetates, alkoxyacetates, propionates, hydroxypropionates, Alkoxypropionates, lactates, ethylene glycol monoalkyl ether acetates, propylene glycol monoalkyl ether acetates, alkoxyacetates, cyclic ketones, acyclic ketones, acetoacetates, pyruvates , N, N-dialkylformamides, N, N-dialkylacetamides, N-alkylpyrrolidones, γ
-Lactones, dialkylsulfoxides, dialkylsulfones, terpineol, N-methyl-2-pyrrolidone, and the like.
More than one species can be used in combination. The content ratio of the solvent in the film-forming material composition (a) can be appropriately selected within a range where good film-forming properties (fluidity or plasticity) can be obtained.

The film-forming material composition (a) may contain, as optional components, a plasticizer, a development accelerator, an adhesion aid, an antihalation agent, a storage stabilizer, an antifoaming agent, an antioxidant, an ultraviolet absorber, and a filler. And various additives such as low melting point glass.

<Film-forming material layer (b)> The film-forming material layer (b) constituting the transfer film contains, as essential components, an inorganic powder, a binder resin, a solvent and a radiation polymerization initiator.
It can be formed by applying the photosensitive film-forming material composition (b) in paste form on the support film, drying the coated film and removing a part or all of the solvent. The film-forming material composition (b) used for producing the transfer film contains (1) an inorganic powder, (2) a binder resin, (3) a solvent, and (4) a radiation-sensitive component. This is a paste-like composition. Among the constituent components of the film-forming material composition (b), (1) inorganic powder, (2) binder resin and (3)
As the solvent, the same solvents as those described as the components of the film-forming material composition (a) can be used. Further, the optional components in the above-mentioned film forming material composition (a) can be used in the same manner.

(4) Radiation-sensitive component The radiation-sensitive component constituting the film-forming material composition (b) includes, for example, (a) a combination of a polyfunctional monomer and a radiation polymerization initiator, and (b) melamine. Preferred examples include a combination of a resin and a photoacid generator that forms an acid upon irradiation with radiation, and among the combinations of the above (a), a combination of a polyfunctional (meth) acrylate and a radiation polymerization initiator. Combinations are particularly preferred.

Specific examples of the polyfunctional (meth) acrylate constituting the radiation-sensitive component include di (meth) acrylates of alkylene glycol such as ethylene glycol and propylene glycol; and polyalkylene glycol such as polyethylene glycol and polypropylene glycol. Di (meth) acrylates; both ends hydroxypolybutadiene, both ends hydroxypolyisoprene,
Di (meth) acrylates of hydroxyl-terminated polymers such as hydroxypolycaprolactone at both ends; trivalent such as glycerin, 1,2,4-butanetriol, trimethylolalkane, tetramethylolalkane, pentaerythritol, dipentaerythritol Poly (meth) acrylates of polyhydric alcohols described above; poly (meth) acrylates of polyalkylene glycol adducts of trihydric or higher polyhydric alcohol; 1,4-cyclohexanediol, 1,4-benzenediol, etc. Poly (meth) acrylates of cyclic polyols; polyester (meth) acrylate, epoxy (meth) acrylate, urethane (meth) acrylate, alkyd resin (meth) acrylate, silicone resin (meth) acrylate, spirane resin (meth) The like can be illustrated oligo (meth) acrylates such as acrylates, which can be used alone or in combination of two or more kinds.

Specific examples of the radiation polymerization initiator constituting the radiation-sensitive component include benzyl, benzoin, benzophenone, camphorquinone and 2-hydroxy-2.
-Methyl-1-phenylpropan-1-one, 1-hydroxycyclohexylphenyl ketone, 2,2-dimethoxy-2-phenylacetophenone, 2-methyl-
Carbonyl compounds such as [4 ′-(methylthio) phenyl] -2-morpholino-1-propanone, 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl) -butan-1-one; Lonitrile,
Azo compounds or azide compounds such as 4-azidobenzaldehyde; organic sulfur compounds such as mercaptan disulfide; benzoyl peroxide, di-tret-butyl peroxide, tret-butyl hydroperoxide, cumene hydroperoxide, paramethane hydroperoxide and the like Organic peroxide of 1,3-bis (trichloromethyl) -5- (2′-chlorophenyl)
-1,3,5-triazine, 2- [2- (2-furanyl) ethylenyl] -4,6-bis (trichloromethyl)
Trihalomethanes such as -1,3,5-triazine;
2,2′-bis (2-chlorophenyl) 4,5,4 ′,
Examples thereof include imidazole dimers such as 5′-tetraphenyl 1,2′-biimidazole. These can be used alone or in combination of two or more. The content ratio of the binder resin in the film-forming material composition (b) is usually 1 to 500 parts by weight, preferably 5 to 100 parts by weight, based on 100 parts by weight of the inorganic powder.

<Resist Film> The resist film constituting the transfer film of the present invention is obtained by applying a resist composition used for forming a resist film used in the above-described PDP production method onto a support film, and drying the coated film. By removing part or all of the solvent.

<Method of Forming Transfer Film> As a method of applying the film forming material composition, it is necessary to be able to efficiently form a large-thick coating film having excellent uniformity of the film thickness. Specifically, a coating method using a roll coater, a coating method using a doctor blade, a coating method using a curtain coater, a coating method using a wire coater, and the like can be mentioned as preferable examples.
The method for applying the resist composition is similar to the method for forming a resist film in the method for producing a PDP of the present invention. The conditions for drying the coating film are, for example, 50
The drying temperature is set at about 150 ° C. for about 0.5 to 30 minutes, and the residual ratio of the solvent after drying (content in the film-forming material layer) is usually within 2% by weight. The thickness of the film-forming material layer formed on the support film as described above varies depending on the content of the inorganic powder, the type and size of the member, and the like. １００100 μm, and the thickness of the film forming material layer (b) is 1-50 μm. In addition, as a protective film layer which may be provided on the surface of the film forming material layer (a), a polyethylene film, a polyvinyl alcohol-based film, or the like can be used.

[0052]

Hereinafter, embodiments of the present invention will be described.
The present invention is not limited by these. In the following, “parts” and “%” indicate “parts by weight” and “% by weight”, respectively. The weight average molecular weight (Mw) was determined by gel permeation chromatography (GPC) (trade name: HLC-8, manufactured by Tosoh Corporation).
02A) is the average molecular weight in terms of polystyrene measured by the method described in Example 02A).

Synthesis Example 1 A monomer composition comprising 200 parts of propylene glycol monomethyl ether acetate, 70 parts of n-butyl methacrylate, 30 parts of methacrylic acid, and 1 part of azobisisobutyronitrile was charged into an autoclave equipped with a stirrer. After stirring at room temperature under a nitrogen atmosphere until uniform, polymerization was carried out at 80 ° C. for 3 hours.
Further, the polymerization reaction was continued at 100 ° C. for 1 hour, and then cooled to room temperature to obtain a polymer solution. Here, the polymerization rate is 98
% Of a copolymer precipitated from this polymer solution [hereinafter referred to as “polymer (A)”. ] Was 70,000.

Synthesis Example 2 Except that a monomer composition comprising 200 parts of propylene glycol monomethyl ether acetate, 80 parts of n-butyl methacrylate, 20 parts of methacrylic acid, and 1 part of azobisisobutyronitrile was charged into an autoclave. A polymer solution was obtained in the same manner as in Synthesis Example 1. Here, the polymerization rate was 97%, and the copolymer precipitated from this polymer solution [hereinafter, referred to as “polymer (B)”. Has a weight average molecular weight (Mw) of 10
It was 0000.

Synthesis Example 3 Except that a monomer composition comprising 200 parts of propylene glycol monomethyl ether acetate, 85 parts of n-butyl methacrylate, 15 parts of methacrylic acid, and 1 part of azobisisobutyronitrile was charged into an autoclave. A polymer solution was obtained in the same manner as in Synthesis Example 1. Here, the polymerization rate is 98%, and the copolymer precipitated from this polymer solution [hereinafter, referred to as “polymer (C)”. ] Has a weight average molecular weight (Mw) of 5
It was 0000.

[Preparation Example 1] Silver powder 100 was used as the inorganic powder.
And 10 parts of glass frit, 30 parts of polymer (A) as an alkali-soluble resin, 5 parts of polypropylene glycol (molecular weight: 400, manufactured by Wako Pure Chemical Industries, Ltd.) as a plasticizer and 100 parts of propylene glycol monomethyl ether acetate as a solvent. By doing so, the film-forming material composition for electrode formation (a) [hereinafter referred to as “film-forming material composition (a-1)”. ] Was prepared.

[Preparation Example 2] Silver powder 100 was used as the inorganic powder.
Parts, 10 parts of glass frit, 30 parts of polymer (B) as an alkali-soluble resin, 5 parts of polypropylene glycol (molecular weight 400, manufactured by Wako Pure Chemical Industries, Ltd.) as a plasticizer and 100 parts of propylene glycol monomethyl ether acetate as a solvent. By doing so, a paste-like film-forming material composition (a) [hereinafter referred to as “film-forming material composition (a-2)”. ] Was prepared.

[Preparation Example 3] Silver powder 100 as an inorganic powder
Parts, 10 parts of glass frit, 30 parts of polymer (A) as an alkali-soluble resin, 5 parts of polypropylene glycol (molecular weight 400, manufactured by Wako Pure Chemical Industries, Ltd.) as a plasticizer, 100 parts of propylene glycol monomethyl ether acetate as a solvent, and radiation-sensitive. Forming a film for electrode formation by kneading 10 parts of trimethylolpropane triacrylate and 2 parts of 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl) -butan-1-one as the active ingredient Material composition (b) [hereinafter referred to as “film-forming material composition (b-1)”. ] Was prepared.

<Example 1 (Preparation of Transfer Film)> A support film (width 200 mm, length 200 mm) made of a polyethylene terephthalate (PET) film obtained by subjecting the obtained film-forming material composition (b-1) to release treatment in advance. 30m, thickness 38
μm) on a roll coater to form a coating film,
The solvent was completely removed by drying the formed coating film at 110 ° C. for 5 minutes, and a film forming material layer (b) for forming an electrode having a thickness of 10 μm [hereinafter referred to as “film forming material layer (b-1)” ) "
That. ] Was formed. Next, the film-forming material composition (a-
1) was coated on the film-forming material layer (b-1) by a roll coater to form a coating film, and the formed coating film was dried at 110 ° C. for 5 minutes to completely remove the solvent. The film-forming material composition (a-2) was applied thereon by a roll coater to form a coating film.
The solvent was completely removed by drying at 5 ° C. for 5 minutes.
As a result, a 20 μm-thick film-forming material layer for electrode formation (a) [hereinafter referred to as “film-forming material layer (a-
1) ". And the transfer film of the present invention [hereinafter referred to as “transfer film (1)”. ] Was produced.

Example 2 (Preparation of Transfer Film) 50 parts of polymer (C) as an alkali-soluble resin, 40 parts of dipentaerythritol hexaacrylate as a radiation-sensitive component and 2-benzyl-2-dimethylamino-1-
By kneading 5 parts of (4-morpholinophenyl) -butan-1-one and 150 parts of propylene glycol monomethyl ether acetate as a solvent, a paste-like alkali-developable radiation-sensitive resist composition was prepared. Next, a support film (width: 200 mm, length: 30 m, made of polyethylene terephthalate (PET) film previously subjected to a mold release treatment)
A film was formed by applying the film on a film having a thickness of 38 μm) using a roll coater. The solvent was completely removed by drying the formed coating film at 110 ° C. for 5 minutes.
m resist film [hereinafter referred to as “resist film (1)”. ] Was formed on a support film. Next, the film-forming material composition (b-1) is applied on the resist film (1) by a roll coater to form a coating film, and the formed coating film is dried at 110 ° C. for 5 minutes. After completely removing the solvent, a film forming material layer (b) for forming an electrode having a thickness of 10 μm.
[Hereinafter, it is referred to as “film forming material layer (b-2)”. ] Was formed. Further, the film-forming material composition (a-1) is applied on the film-forming material layer (b-2) by a roll coater to form a coating film, and the formed coating film is dried at 110 ° C. for 5 minutes. Thus, the solvent is completely removed, and the film-forming material composition (a-2) is further applied thereon by a roll coater to form a coating film, and the formed coating film is dried at 110 ° C. for 5 minutes. As a result, the solvent was completely removed. As a result, a two-layer electrode-forming film-forming material layer (a) having a thickness of 20 μm [hereinafter referred to as “film-forming material layer (a-2)”. ]
To form a transfer film of the present invention [hereinafter referred to as “transfer film (2)”. ] Was produced.

[Preparation Example] A support film (200 m wide) made of a polyethylene terephthalate (PET) film obtained by subjecting the resist composition obtained in Example 3 to a mold release treatment in advance.
m, length 30 m, thickness 38 μm) by a roll coater to form a coating film. 110 ° C.
For 5 minutes to completely remove the solvent, thereby forming a resist film having a thickness of 5 μm [hereinafter referred to as “resist film (1)”. ] On a support film, and a transfer film [hereinafter referred to as "transfer film (d)". ] Was produced.

<Example 1 (Manufacture of PDP Electrode)> [Step of Transferring Film Forming Material Layer] The surface of the film forming material layer (a-1) for electrode formation was formed on the surface of a glass substrate for a 6-inch panel. The transfer film (1) was overlapped so that the contact was made, and the transfer film (1) was thermocompression-bonded with a heating roller. Here, as the pressure bonding conditions, the surface temperature of the heating roller was 120 ° C., the roll pressure was 4 kg / cm ² , and the moving speed of the heating roller was 0.5 m / min. After the completion of the thermocompression bonding, the support film was peeled off from the laminated film (the surface of the film forming material layer (b-1)). As a result, the film-forming material layer was transferred to and adhered to the surface of the glass substrate.
When the film thickness of this film forming material layer (film forming material layer (a-1) + film forming material layer (b-1)) was measured, 30
It was in the range of μm ± 1 μm.

[Step of Forming Resist Film] A transfer film (d) is superimposed on the surface of the film-forming material layer (b-1) so that the surface of the resist film (1) is in contact with the surface. ) Was thermocompression bonded using a heating roller under the same compression conditions as above. After the completion of the thermocompression bonding, the support film was peeled off from the resist film (1). This allows
The resist film (1) was transferred to the surface of the film forming material layer (b-1), and was brought into close contact with the film. Film forming material layer (b-
When the thickness of the resist film (1) transferred to the surface of 1) was measured, it was in the range of 5 μm ± 1 μm.

[Resist Film Exposure Step] The resist film (1) formed on the laminate of the film forming material layers was exposed to an ultra-high pressure mercury lamp through an exposure mask (40 μm width stripe pattern). Irradiation (ultraviolet light having a wavelength of 365 nm) was performed. Here, the irradiation amount is 400 mJ / cm ^2.
And

[Resist Film Developing Step] The exposed resist film (1) was subjected to a developing treatment by a shower method using a 0.2% by weight aqueous solution of potassium hydroxide (25 ° C.) for 20 seconds. I went over it. Next, a water washing treatment with ultrapure water was performed, whereby the uncured resist not irradiated with the ultraviolet rays was removed, and a resist pattern was formed.

[Etching Step of Film Forming Material Layer] Continuing with the above steps, an etching treatment by a shower method using a 0.2% by weight aqueous solution of potassium hydroxide (25 ° C.) as an etching solution is performed for 2 minutes. Was. Next, a washing treatment and a drying treatment with ultrapure water were performed. Thereby, a pattern of the film forming material layer composed of the material layer remaining portion and the material layer removed portion was formed.

[Firing Step of Film Forming Material Layer] The glass substrate on which the pattern of the film forming material layer is formed is placed in a firing furnace for 600 hours.
The sintering process was performed in a temperature atmosphere of 30 ° C. for 30 minutes. As a result, a panel material having electrodes formed on the surface of the glass substrate was obtained. When the cross-sectional shape of the electrode in the obtained panel material was observed with a scanning electron microscope and the width and height of the bottom surface of the cross-sectional shape were measured, the width of the bottom surface was 40 μm ± 2 μm and the height was 10 μm ± 1 μm. The dimensional accuracy was extremely high.

Example 2 [Step of Transferring Laminated Film] A transfer film such that the surface of the film forming material layer (a-2) is brought into contact with the surface of the same glass substrate as used in Example 1. The transfer film (2) was thermocompression-bonded to a heating roller. here,
As the pressure bonding conditions, the surface temperature of the heating roller was set to 120 ° C.
The roll pressure was 4 kg / cm ² and the moving speed of the heating roller was 0.5 m / min. After the completion of the thermocompression bonding, the support film was peeled off from the laminated film [the surface of the resist film]. Thereby, the laminated film was transferred to the surface of the glass substrate and brought into close contact therewith. This laminated film (film forming material layer (a-
2) + Film-forming material layer (b-2) + resist film). The film thickness was measured and found to be in the range of 35 μm ± 1 μm.

[Resist Film Exposure Step / Development Step] The resist film formed on the laminate of the film forming material layers
Under the same conditions as in Example 1, an exposure treatment (irradiation with ultraviolet rays), a development treatment with an aqueous potassium hydroxide solution, and a washing treatment were performed to form a resist pattern on the laminate of the film forming material layers.

[Etching Step of Film Forming Material Layer] The film forming material layer is subjected to etching treatment with an aqueous solution of potassium hydroxide, washing with water and drying under the same conditions as in Example 1 in succession to the above steps. A layer pattern was formed.

[Firing Step of Film Forming Material Layer Pattern] The glass substrate on which the film forming material layer pattern was formed was fired in a firing furnace at a temperature of 600 ° C. for 30 minutes. As a result, a panel material having electrodes formed on the surface of the glass substrate was obtained. The cross-sectional shape of the electrode in the obtained panel material was observed with a scanning electron microscope, and the width and height of the bottom surface of the cross-sectional shape were measured. The width of the bottom surface was 40 μm ± 2 μm, and the height was 10 μm ± 1.
μm, and the dimensional accuracy was extremely high.

[0072]

According to the method of manufacturing a plasma display panel of the present invention, it is possible to manufacture a plasma display panel in which the number of steps is substantially reduced as compared with the conventional method, and thus the workability is improved. Further, the plasma display panel obtained by the present invention has a high definition pattern.

[Brief description of the drawings]

FIG. 1 is an explanatory sectional view showing a general PDP.

FIG. 2 is a sectional view for illustrating a method of manufacturing a plasma display panel according to one embodiment of the present invention in the order of steps.

FIG. 3 is an explanatory cross-sectional view showing a step that follows the step of FIG. 2 in the manufacturing method according to one embodiment of the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Glass substrate 2 Glass substrate 3 Partition wall 4 Transparent electrode 5 Bus electrode 6 Address electrode 7 Phosphor 8 Dielectric layer 9 Dielectric layer 10 Protective film 11 Substrate 20 Transfer film 21 Film forming material layer (a) 22 Support film 23 Film formation Material layer (b) 25 Film forming material layer pattern 25A Material layer residual portion 25B Material layer removed portion 31 Resist film M Exposure mask MA Light transmitting portion (exposure mask) MB Light shielding portion (exposure mask) 35 Resist pattern 35A resist Residual part 35B Resist removal part 40 Inorganic pattern 50 Panel material

 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Setsuko Noma 2-11-24 Tsukiji, Chuo-ku, Tokyo JSR Co., Ltd. F-term (reference) 5C027 AA01 AA09 AA10 5C028 FF16 HH14 JJ09 5C040 FA01 FA04 GB03 GB14 GC19 GF19 GG09 GH03 GH07 JA19 MA26

Claims (8)

[Claims] A first film-forming material layer, which does not contain a radiation polymerization initiator, formed on a support film is transferred onto a substrate, and the radiation-polymerization initiator is coated on the first film-forming material layer. Forming a second film-forming material layer, forming a resist film on the second film-forming material layer, exposing the resist film to light, forming a latent image of a resist pattern, Developing a resist pattern to make it obvious, forming a pattern of the film forming material layer corresponding to the resist pattern by etching the film forming material layer, and baking the pattern, a partition, A method for manufacturing a plasma display panel, comprising forming at least one of an electrode, a resistor, a phosphor, a color filter, and a black matrix. 2. The method for manufacturing a plasma display panel according to claim 1, wherein the first film forming material layer is formed of a laminate having a plurality of films having different solubility in an etching solution. 3. The method according to claim 1, wherein the second film forming material layer is formed on the first film forming material layer by transferring the second film forming material layer formed on the support film. A method for manufacturing a plasma display panel according to claim 1. 4. The plasma display panel according to claim 1, wherein a resist film is formed on the second film forming material layer by transferring the resist film formed on the support film. Method. 5. A laminated film of a first film-forming material layer and a second film-forming material layer is formed on a support film, and the laminated film formed on the support film is transferred onto a substrate. A resist film is formed on the film, the resist film is exposed to light, a latent image of the resist pattern is formed, the resist film is developed to reveal the resist pattern, and the film forming material layer is etched. Forming a pattern of a film forming material layer corresponding to the resist pattern, and forming at least one of a partition, an electrode, a resistor, a phosphor, a color filter and a black matrix by a method including a step of baking the pattern. Characterized by
A method for manufacturing a plasma display panel. 6. A resist film, a second film forming material layer,
A laminated film with the first film-forming material layer is formed on a supporting film, the laminated film formed on the supporting film is transferred onto a substrate, and a resist film constituting the laminated film is exposed to light to form a resist pattern. Is formed, the resist film is developed to develop a resist pattern, the film forming material layer is etched to form a pattern of the film forming material layer corresponding to the resist pattern, and the pattern is baked. A method for manufacturing a plasma display panel, comprising forming at least one of a partition, an electrode, a resistor, a phosphor, a color filter, and a black matrix by a method including a treatment step. 7. A laminated film of a second film-forming material layer containing a radiation-sensitive polymerization initiator and a first film-forming material layer not containing a radiation-sensitive polymerization initiator is formed on a support film. A transfer film, characterized in that it is formed. 8. A laminated film of a resist film, a second film-forming material layer containing a radiation-sensitive polymerization initiator, and a first film-forming material layer not containing a radiation-sensitive polymerization initiator, A transfer film, which is formed on a film.