JP2000182957A5 - - Google Patents
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- Publication number
- JP2000182957A5 JP2000182957A5 JP1999228745A JP22874599A JP2000182957A5 JP 2000182957 A5 JP2000182957 A5 JP 2000182957A5 JP 1999228745 A JP1999228745 A JP 1999228745A JP 22874599 A JP22874599 A JP 22874599A JP 2000182957 A5 JP2000182957 A5 JP 2000182957A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- vapor deposition
- aqueous solution
- chemical vapor
- solution containing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010408 film Substances 0.000 claims 15
- KRHYYFGTRYWZRS-UHFFFAOYSA-N HF Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 13
- 239000004065 semiconductor Substances 0.000 claims 10
- 239000007864 aqueous solution Substances 0.000 claims 8
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims 8
- 238000004519 manufacturing process Methods 0.000 claims 6
- 239000010409 thin film Substances 0.000 claims 6
- 239000007790 solid phase Substances 0.000 claims 4
- 238000004140 cleaning Methods 0.000 claims 3
- 238000002425 crystallisation Methods 0.000 claims 3
- 230000005712 crystallization Effects 0.000 claims 3
- 230000001681 protective Effects 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- 239000002253 acid Substances 0.000 claims 2
- 238000005229 chemical vapour deposition Methods 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 2
- 229910000077 silane Inorganic materials 0.000 claims 2
- 238000005406 washing Methods 0.000 claims 2
- LDDQLRUQCUTJBB-UHFFFAOYSA-N Ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- 230000001590 oxidative Effects 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 239000000243 solution Substances 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11228745A JP2000182957A (ja) | 1998-10-09 | 1999-08-12 | 薄膜半導体装置の製造方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28855198 | 1998-10-09 | ||
| JP10-288551 | 1998-10-09 | ||
| JP11228745A JP2000182957A (ja) | 1998-10-09 | 1999-08-12 | 薄膜半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000182957A JP2000182957A (ja) | 2000-06-30 |
| JP2000182957A5 true JP2000182957A5 (ko) | 2004-11-11 |
Family
ID=26528437
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11228745A Pending JP2000182957A (ja) | 1998-10-09 | 1999-08-12 | 薄膜半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000182957A (ko) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004006487A (ja) * | 2002-05-31 | 2004-01-08 | Sharp Corp | 結晶質薄膜の形成方法、結晶質薄膜の製造装置、薄膜トランジスタ、および光電変換素子 |
| RU2661320C1 (ru) * | 2017-04-26 | 2018-07-13 | Закрытое акционерное общество Научно-инженерный центр "ИНКОМСИСТЕМ" | Способ гидрофобизации субстрата |
-
1999
- 1999-08-12 JP JP11228745A patent/JP2000182957A/ja active Pending
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