JP2000150571A - Semiconductor device and manufacture thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device made of an opaque substrate having high strength and easily handled with a few pressing jigs and manufactured with high productivity because of a short pressing time and with low cost because of reduced installation cost and a manufacture thereof. SOLUTION: A photocuring insulating adhesive resin 4 is supplied to the packaging position of a semiconductor device 5 of a substrate 2. Transparent bumps 6a, 6b formed on the reverse surface of the semiconductor device 5 are faced toward the substrate 2 and are put into contact with and electrically connected to wiring patterns 3a, 3b of the substrate 2. Then, light 10 from a light source 9 is applied between the substrate 2 and the semiconductor device 5 from the outer peripheral portion of the semiconductor device 5 to cure the insulating adhesive resin 4, and the insulating adhesive resin 4 at the back side of the bumps 6a, 6b against the incident direction of the light 10 is cured by light passing through the bumps 6a, 6b to fix the semiconductor device 5 to the substrate 2.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION The present invention relates to a semiconductor device to be mounted on a wiring pattern formed on a substrate by bringing a protruding electrode formed on the back surface of a semiconductor element to be mounted into contact with the wiring pattern and electrically connecting the semiconductor element to the substrate. The present invention relates to a semiconductor device in which a semiconductor element is fixed to a substrate by an insulating adhesive resin interposed between the element and a back surface of the element, and a method of manufacturing the semiconductor device.

[0002]

2. Description of the Related Art A semiconductor device is constructed by mounting a semiconductor element on a substrate on which a wiring pattern is formed by using an insulating adhesive resin. And the case of a thermosetting resin.

FIGS. 7 and 8 show a conventional semiconductor device manufacturing process.
Shown in FIG. 7 shows a manufacturing process of a semiconductor device using an ultraviolet curable resin, and FIG. 8 shows a manufacturing process of a semiconductor device using a thermosetting resin.

When an ultraviolet-curable resin such as an epoxy-based, silicon-based, or acrylic-based resin is used as the insulating adhesive resin, as shown in FIG.
Is used as the substrate on which is mounted a light-transmissive transparent substrate 15, such as glass, which transmits light, ultraviolet light, and the like.

On this transparent substrate 15, Cr-Au, Al, C
After a metal for substrate wiring is formed by sputtering or vapor deposition of u, ITO, etc., the metal for substrate wiring is etched by a photo-resist method while leaving a resist in a portion where the substrate wiring is to be formed, or a printing method is used. The wiring patterns 3a and 3b are formed, and the wiring board 1 is formed.

The obtained wiring board 1 is placed on a pressing jig 7, and ultraviolet curing resin 4 is supplied to the mounting position of the semiconductor element 5 on the wiring board 1. On the back surface of the semiconductor element 5, Au, which is formed on an aluminum electrode by electroplating or the like,
Protruding electrodes 12a and 12b made of Ag, Cu or the like are formed. The projecting electrodes 12a and 12b are connected to the wiring board 1
, So as to overlap with the wiring patterns 3a and 3b, and as shown in FIG.
Then, the wiring pattern 3a and the protruding electrode 12a are brought into contact with each other, and the wiring pattern 3b and the protruding electrode 12b are brought into contact with each other to be electrically connected.

[0007] Then, while holding the pressurization by the pressurizing jigs 7, 8, ultraviolet rays 10 are irradiated toward the ultraviolet curable resin 4 from an ultraviolet irradiator 9 arranged below the pressurizing jig 7. . The irradiated ultraviolet rays 10 pass through the transparent substrate 15 to cure the ultraviolet curing resin 4. Thereafter, the pressing jigs 7 and 8 are removed, and the pressure is released to obtain a semiconductor device.

On the other hand, epoxy-based insulating resin,
When a thermosetting resin such as a silicon-based or acrylic-based resin is used, as shown in FIG. 8A, a substrate on which the semiconductor element 5 is mounted is exposed to light or ultraviolet light such as ceramic or glass epoxy. Opaque substrate 2 that does not transmit
Is used.

The wiring board 1 having the wiring patterns 3a and 3b formed on the opaque substrate 2 in the same manner as described above
7, and the thermosetting resin 16 is supplied to the mounting position of the semiconductor element 5 on the wiring board 1.

The semiconductor element 5 has the same configuration as described above.
The protruding electrodes 12a, 12b of the semiconductor element 5 are brought into contact with the wiring patterns 3a, 3b in the same manner as described above, and pressurized by pressurizing jigs 17, 18, and the screws 19a, 19b and the clasp 2 are pressed.
The pressurized state is maintained at 0a and 20b.

Then, the semiconductor device 5 is placed in an electric furnace or the like while maintaining the pressurized state, and is heated from the outer peripheral portion to cure the thermosetting resin 16. Thereafter, the semiconductor devices are obtained by removing the pressure jigs 17 and 18 and releasing the pressure.

[0012]

However, the above-described conventional method for manufacturing a semiconductor device has the following problems.

In the method of manufacturing a semiconductor device shown in FIG. 7, when the transparent substrate 15 made of glass or the like can be easily manufactured, the opaque substrate 2 made of ceramic or glass epoxy having higher strength than the transparent substrate 15 is used. It is difficult to manufacture a semiconductor device using the semiconductor device.

That is, when the ultraviolet ray 10 is irradiated from behind the wiring substrate 1 using the opaque substrate 2, the ultraviolet ray 10 is hardly transmitted, and the ultraviolet curable resin 4 cannot be sufficiently cured. A semiconductor device with good durability cannot be obtained.

Further, in the method of manufacturing a semiconductor device shown in FIG. 8, although the opaque substrate 2 having high strength can be used, a large number of heating steps are required to fix the thermoplastic resin 16 as shown in FIG. It is necessary to heat the device by fixing it with a jig in an electric furnace or the like, which is inferior in handleability and increases equipment cost and cost. Further, since it generally takes tens of minutes to several hours to cure the thermosetting resin, the pressurizing time becomes longer and the productivity is poor.

The present invention solves the above-mentioned problems, can use a high-strength opaque substrate, has a small number of pressing jigs, has good handling properties, and has a short pressurizing time, so that productivity is good and equipment investment costs are low. An object of the present invention is to provide a semiconductor device and a method for manufacturing the same, which can reduce the cost with less.

[0017]

According to the present invention, there is provided a semiconductor device comprising:
It is characterized in that the configuration of the back surface of the semiconductor element is special.

According to the present invention, an opaque substrate can be used even if a photocurable resin is used, and a highly reliable and highly durable semiconductor device can be obtained. Further, the method of manufacturing a semiconductor device according to the present invention is characterized in that light is applied so that the resin around the protruding electrodes of the semiconductor device can be completely cured.

According to the present invention, the handling efficiency is improved by reducing the number of pressing jigs, the pressurizing time is shortened, the productivity is improved, and the cost is reduced because no large-scale equipment is required. Can be planned.

[0020]

In a semiconductor device according to the present invention, a projection electrode formed on a back surface of a semiconductor element to be mounted is brought into contact with a wiring pattern formed on a substrate to be electrically connected. In a semiconductor device in which a semiconductor element is fixed to a substrate by an insulating adhesive resin interposed between the substrate and the back surface of the semiconductor element, the insulating adhesive resin is a photocurable resin, The projection electrode is formed of a light transmissive material.

According to this structure, the insulating adhesive resin around the protruding electrode can be completely cured, and the electrical connection between the protruding electrode and the wiring pattern can be made good and highly reliable.

According to a second aspect of the present invention, there is provided a semiconductor device, wherein a projection electrode formed on a back surface of a semiconductor element to be mounted is brought into contact with a wiring pattern formed on a substrate to be electrically connected,
In a semiconductor device in which a semiconductor element is fixed to a substrate by an insulating adhesive resin interposed between the substrate and the back surface of the semiconductor element, the insulating adhesive resin is a photocurable resin, and the substrate and the semiconductor A convex portion is provided between the outer surface of the semiconductor element and the back surface of the semiconductor device to reflect light incident from the outer region of the semiconductor device to the back surface of the semiconductor device. It is characterized by the following.

With this configuration, the same effect as described above can be obtained. According to a third aspect of the present invention, there is provided the semiconductor device according to the first aspect, wherein a thin film layer made of a material having a lower resistance than the material of the protruding electrode is formed on a contact surface of the protruding electrode with the wiring pattern at the tip.

According to this structure, a defective burn-in of the protruding electrode can be eliminated, and a more reliable semiconductor device can be obtained. According to a fourth aspect of the present invention, in the semiconductor device according to the second aspect, a convex portion for reflecting light incident from an outer peripheral portion of the semiconductor element to a rear surface of the projecting electrode is provided on a rear surface of the semiconductor element.

According to a fifth aspect of the present invention, there is provided a method of manufacturing a semiconductor device.
On the wiring pattern formed on the substrate, a protruding electrode formed on the back surface of the semiconductor element to be mounted was brought into contact and electrically connected, and was interposed between the substrate and the back surface of the semiconductor element. When manufacturing a semiconductor device in which a semiconductor element is fixed to a substrate by an insulating adhesive resin, a photocurable insulating adhesive resin is supplied to a mounting position of the semiconductor element on the substrate,
The light-transmitting projection electrode formed on the back surface of the semiconductor element faces the substrate, and the projection electrode of the semiconductor element is brought into contact with the wiring pattern of the substrate so as to be electrically connected to the outer periphery of the semiconductor element. Irradiating light from a light source between the substrate and the semiconductor element from the portion, and curing the insulating adhesive resin between the outer peripheral portion of the semiconductor element and the protruding electrode, and applying the light to the incident direction of the light. The insulating adhesive resin on the back surface of the protruding electrode is cured by light transmitted through the protruding electrode, and the semiconductor element is fixed on the substrate.

According to this configuration, the above-described semiconductor device can be easily realized. 7. The method for manufacturing a semiconductor device according to claim 6, wherein a protruding electrode formed on the back surface of the semiconductor element to be mounted is brought into contact with the wiring pattern formed on the substrate so as to be electrically connected to the wiring pattern. When manufacturing a semiconductor device in which a semiconductor element is fixed to a substrate by an insulating adhesive resin interposed between the semiconductor element and the back surface, a photocurable insulating adhesive resin is applied to the mounting position of the semiconductor element on the substrate. The semiconductor device is provided with a light-transmitting projecting electrode formed on the back surface of the semiconductor element facing the substrate and electrically connecting the projecting electrode of the semiconductor element on the wiring pattern of the substrate by contacting the semiconductor element. Irradiating light from a light source between the substrate and the semiconductor element from the outer peripheral portion of the element, while curing the insulating adhesive resin between the outer peripheral portion of the semiconductor element and the projecting electrode,
The insulating adhesive resin on the back surface of the protruding electrode with respect to the incident direction of the light is provided between the substrate and the back surface of the semiconductor device inside the outer periphery of the semiconductor device with respect to the protruding electrode of the semiconductor device. The light incident from the outer peripheral portion of the semiconductor element at the projected portion is reflected on the back surface of the protruding electrode and cured to fix the position of the semiconductor element on the substrate.

With this configuration, the same effect as described above can be obtained. Hereinafter, embodiments of the present invention will be described with reference to FIGS. 1 to 6. 7 and 8 showing the above-mentioned conventional example will be described with the same reference numerals.

(Embodiment 1) FIGS. 1 to 5 show (Embodiment 1) of the present invention. The point of using the ultraviolet curable resin 4 is the same as that of FIG. 7 showing the conventional example, but in this (Embodiment 1), a non-transmissive substrate made of ceramic, glass epoxy, or the like is used as a substrate constituting the wiring substrate 1. The difference is that the opaque substrate 2 is used and the configuration of the back surface of the semiconductor device 5 facing the wiring substrate 1 is special.

More specifically, as shown in FIG. 1A, the wiring patterns 3a, 3a,
The wiring board 1 on which 3b is formed is placed on the pressing jig 7.
An ultraviolet-curable resin 4 is used as the insulating adhesive resin, and the ultraviolet-curable resin 4 is supplied to the mounting position of the semiconductor element 5 on the wiring board 1 so that the thickness is about 0.5 to 50 μm.

Light-transmissive bump electrodes 6a and 6b are formed on the back surface of the semiconductor element 5 using a transparent conductive material such as ITO. The wiring pattern 3a, the protruding electrode 6a, and the wiring pattern 3
b and the protruding electrode 6b are arranged so as to be in contact with each other.
As shown in (b), the semiconductor elements 5 are pressed by the pressing jigs 7 and 8, and the wiring patterns 3a and 3b and the projecting electrodes 6a and 6 are pressed.
b is electrically connected.

While the pressurized state is maintained, the wiring board 1 is removed from the outer periphery of the semiconductor element 5, specifically, from the side of the semiconductor element 5.
Ultraviolet light 10 is irradiated from an ultraviolet irradiator 9 toward between the semiconductor device 5 and the semiconductor device 5. When the resin is cured by UV irradiation,
As shown in FIG. 2, the protruding electrodes 6a, 6b and the electrode patterns 3a, 3b are fixed by the contraction force of the resin indicated by the arrow A.

The projection electrodes 12a and 12b of the conventional semiconductor device 5 shown in FIG.
An opaque metal such as Au, Ag, Cu or the like is arranged on the aluminum electrode by electroplating or the like.

When such projecting electrodes 12a and 12b are used, the ultraviolet rays 1
0, the projecting electrode 1 as shown in FIG.
Since 2a and 12b do not transmit the ultraviolet light 10, the ultraviolet light 10 is reflected on the front surface thereof, and the ultraviolet light 10 is not irradiated on the back surface of the protruding electrodes 12a and 12b, so that an uncured portion 14 is generated as shown by hatching.

When such an uncured portion 14 occurs, the uncured resin is removed from the protruding electrode 12 when the pressure is released.
a, 12b and the wiring patterns 3a, 3b, and a connection failure occurs, thereby lowering the reliability of the semiconductor device.

However, in this (Embodiment 1), since the projecting electrodes 6a and 6b are formed of a transparent conductive material as described above, as shown in FIG. Ultraviolet rays 10 radiated from the side face are projected electrodes 6a,
The ultraviolet-curable resin 4 on the back surface is transmitted through 6b and cured, and the resin around the protruding electrodes 6a and 6b is completely cured.

Therefore, the uncured resin does not enter between the protruding electrodes 6a, 6b and the wiring patterns 3a, 3b even when the pressure is released, and a highly reliable semiconductor device with good electrical connection is provided. can get.

In the semiconductor device obtained in the first embodiment, the contraction force of the resin indicated by arrow A exceeds the expansion force of the resin indicated by arrow B in the normal operation mode. As shown in (a), the protruding electrodes 6a and 6b and the wiring patterns 3a and 3b are in close contact with each other, and a stable electrical connection is obtained.

However, when the semiconductor device 5 is exposed to a high temperature and a high pressure due to a malfunction or the like during use of the semiconductor device, the transparent conductive material such as ITO for forming the bump electrodes 6a and 6b is made of Au, Ag, Cu or the like. Since the resistance value is about two orders of magnitude higher than that of metal, the arrow B is smaller than the contraction force of the resin indicated by arrow A.
The expansion force of the resin indicated by may increase.

In this state, as shown in FIG. 4B, the wiring patterns 3a, 3b of the projecting electrodes 6a, 6b
The contact surface with the wiring patterns 3a, 3b is bent in a convex shape on the side of the wiring patterns 3a, 3b.
a, 3b, a gap is generated, and the contact area decreases,
Poor electrical connection occurs.

As a result, the contact portions between the protruding electrodes 6a, 6b and the wiring patterns 3a, 3b are in an electrically connected state with high resistance, and finally, the protruding electrodes 6a, 6b are burned to become non-conductive and become electrically non-conductive. You lose your connection.

As a method for solving such a connection failure during use of the semiconductor device, in this (Embodiment 1), as shown in FIG. 5, the wiring patterns 3a, 3b are connected to the tips of the projecting electrodes 6a, 6b. It is preferable to form a thin film layer 11 made of a material having a lower resistance than a transparent conductive material such as ITO on the contact surface of.

The low-resistance thin film layer 11 is formed on the protruding electrodes 6a and 6b.
In the case where the semiconductor device malfunctions as described above and the temperature exceeds the expected temperature and the resin expands, the protruding electrodes 6a and 6b having high resistance and the wiring pattern 3 are formed.
a and 3b are connected via the low-resistance thin film layer 11, so that the resistance value at this portion does not change and the protruding electrodes 6a and 6b are connected.
b can be prevented from burning.

The thin film layer 11 is not particularly limited as long as it has a lower resistance than the transparent conductive material.
Metals such as u, Ag, and Cu can be suitably used. When such a metal thin film is used, it is possible to prevent deterioration such as oxidation.

The thickness of the thin film layer 11 may be about 0.2 μm. Such a metal layer is formed by forming the projecting electrodes 6a and 6b by sputtering, and then depositing Au or the like on the projecting electrodes 6a and 6b. It is obtained by forming the material by a sputtering method or a plating method.

(Embodiment 2) FIG. 6 shows (Embodiment 2) of the present invention. In the above (Embodiment 1), the semiconductor element 5 having the light-transmitting bump electrodes 6a and 6b made of a transparent conductive material is used. As in the example shown in FIG. 7, the semiconductor element 5 having the non-transparent projecting electrodes 12a and 12b made of metal is used.
The difference is that a reflecting means for sufficiently curing the ultraviolet curable resin in the peripheral portion of 2b is provided, and the other points are almost the same as those of the above (Embodiment 1).

More specifically, as shown in FIG. 6, the reflecting means is provided on the back surface of the semiconductor element 5 from the outer periphery of the semiconductor element 5 to the inside of the outer periphery of the semiconductor element 5 to project light from the light source. Protrusions 13a and 13b for reflecting light were provided on the back surfaces of the electrodes 12a and 12b.

The protruding portions 13a and 13b are
It is made of the same material as a and 12b, specifically made of a metal such as Au, and reflects incident light to the protruding electrodes 12a and 12b in a cylindrical shape having a thickness of about 5 to 30 μm. Also, the projections 13a and 13b are
When a and 12b are formed, they are simultaneously formed by a sputtering method or a plating method.

With such a configuration, the ultraviolet irradiator 9
When the projections 12a-1
The ultraviolet curable resin 4 on the front and side surfaces of 2c is composed of ultraviolet rays 10 directly incident from the outside and projection electrodes 12a to 12c.
Is cured by the ultraviolet rays 10 reflected on the front surface of the substrate.

Further, since the ultraviolet curing resin 4 on the back side of the protruding electrodes 12a to 12c is cured by the light reflected by the projections 13a and 13b, the ultraviolet curing resin located around the protruding electrodes 12a and 12b is cured. The resin 4 is completely cured, and a good electrical connection is obtained.

The projections 13a and 13a are located on the light incident side.
On the back side of b, since the ultraviolet rays 10 do not reach, a portion where the resin is not cured occurs as shown by hatching 14, but around the protruding electrodes 12a to 12c, that is, in the portion where electrical connection needs to be guaranteed. The ultraviolet curable resin 4 is completely cured. As described above, since the resin around the protruding electrodes 12a to 12c is completely cured, the protruding electrodes 12a to 12c are hardened.
Uncured resin does not enter between the wiring patterns 12c and the wiring pattern, and good electrical connection can be realized. In addition, the uncured resin indicated by hatching 14 is irradiated with the ultraviolet light 10 and then cured without being released from the pressure without being released from the pressure in the electric furnace, and a good physical connection is realized by releasing the pressure. it can.

Although it is necessary to use an electric furnace after irradiating the ultraviolet rays 10, unlike the conventional example shown in FIG. 8, the semiconductor element 5 and the wiring board are hardened by curing the resin around the protruding electrodes 12a to 12c. 1 is temporarily fixed and does not require a large pressurizing jig, so that the handleability does not decrease. Furthermore, since the curing time is shorter than when the resin is cured using only an electric furnace, productivity does not decrease.

In the above (Embodiment 2), the protrusion 13
Although a and 13b are formed on the back surface of the semiconductor element 5, the present invention is not limited to this, and similar effects can be obtained by forming them on the wiring substrate 1 side.

In the above (Embodiment 2), the protrusion 1
3a and 13b are cylindrical, but the present invention is not limited to this. For example, the shapes of the protrusions 13a and 13b may be triangular prisms and their vertices may be arranged with respect to incident light, or the shape may be four. The prism may be configured such that a corner portion is arranged for incident light and the incident light is reflected on the back surfaces of the protruding electrodes 12a and 12b.

[0054]

As described above, according to the semiconductor device of the present invention, the insulating adhesive resin for mounting the semiconductor element on the wiring board is made of a photocurable resin, and the projecting electrodes of the semiconductor element are made of a light transmitting material. By forming, the insulating adhesive resin around the protruding electrode can be completely cured, and the electrical connection between the protruding electrode and the wiring pattern can be made good and highly reliable.

Alternatively, instead of forming the protruding electrodes of the semiconductor element from a light-transmitting material, the protruding electrodes of the semiconductor element are disposed between the wiring substrate and the back surface of the semiconductor element inward from the outer peripheral portion of the semiconductor element. The same effect as described above can also be obtained by providing a convex portion for reflecting light incident from the outer peripheral portion of the semiconductor element on the back surface of the bump electrode.

Since such a semiconductor device can use an opaque substrate made of ceramic or glass epoxy, which has higher strength than a transparent substrate such as glass, a semiconductor device having good durability can be obtained.

According to the method of manufacturing a semiconductor device of the present invention, light is emitted from a light source between the substrate and the semiconductor element from an outer peripheral portion of the semiconductor element, and a light is irradiated between the outer peripheral portion of the semiconductor element and the projecting electrode. Curing the insulating adhesive resin, and curing the insulating adhesive resin on the back surface of the projecting electrode with the light transmitted through the projecting electrode in the incident direction of the light to fix the position of the semiconductor element to the substrate. Thus, the above-described semiconductor device can be easily realized.

Alternatively, light is irradiated from a light source from the outer periphery of the semiconductor element to between the substrate and the semiconductor element to cure the insulating adhesive resin between the outer periphery of the semiconductor element and the protruding electrode. The insulating adhesive resin on the back surface of the protruding electrode with respect to the incident direction of the light is provided between the substrate and the back surface of the semiconductor device inside the outer periphery of the semiconductor device with respect to the protruding electrode of the semiconductor device. The semiconductor device described above can be easily realized by fixing the semiconductor element to the substrate by reflecting the light incident from the outer peripheral portion of the semiconductor element to the rear surface of the protruding electrode and curing the semiconductor element on the substrate.

According to the method of manufacturing a semiconductor device as described above, the handling efficiency is improved by reducing the number of pressing jigs,
The pressurizing time is shortened to improve the productivity, and the cost can be reduced because no large-scale equipment is required.

[Brief description of the drawings]

FIG. 1 is a diagram showing a mounting step of a semiconductor element in (Embodiment 1);

FIG. 2 is a partially enlarged view showing a connection state between a semiconductor element and a wiring pattern in Embodiment 1;

FIG. 3 is a schematic view showing an irradiation state of ultraviolet rays near a protruding electrode in (Embodiment 1).

FIG. 4 is a partially enlarged view showing a connection state between a protruding electrode and a wiring pattern in the first embodiment.

FIG. 5 is a partially enlarged view showing a connection state between a protruding electrode and a wiring pattern in the first embodiment.

FIG. 6 is a schematic diagram showing an irradiation state of ultraviolet rays near a protruding electrode in (Embodiment 2).

FIG. 7 is a view showing a mounting process of a semiconductor element using a conventional ultraviolet curable resin.

FIG. 8 is a diagram showing a mounting process of a semiconductor element using a conventional thermosetting resin.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Wiring board 2 Opaque board 3a, 3b Wiring pattern 4 Ultraviolet curing resin 5 Semiconductor element 6a, 6b Protruding electrode 7, 8 Pressure jig 9 Ultraviolet irradiator 10 Ultraviolet 11 Conductive thin film 12a, 12b Protruding electrode 13a, 13b Convex part

Claims (6)

[Claims] 1. A semiconductor device to be mounted is electrically connected to a wiring pattern formed on a substrate by bringing a protruding electrode formed on the back surface of a semiconductor element to be mounted into contact with the wiring pattern. In a semiconductor device in which a semiconductor element is fixed to a substrate by an insulating adhesive resin interposed therebetween, the insulating adhesive resin is a photocurable resin, and the projecting electrodes of the semiconductor element are formed of a light-transmitting material. Semiconductor device. 2. A wiring pattern formed on a substrate is electrically connected to a protruding electrode formed on a back surface of a semiconductor element to be mounted on the wiring pattern formed between the substrate and the back surface of the semiconductor element. In a semiconductor device in which a semiconductor element is fixed to a substrate by an insulating adhesive resin interposed therebetween, the insulating adhesive resin is a photocurable resin, and the semiconductor element is disposed between the substrate and the back surface of the semiconductor element. A semiconductor device provided with a convex portion disposed on the inner side from the outer peripheral portion of the semiconductor element with respect to the protruding electrode and reflecting light incident from the outer peripheral portion of the semiconductor element to the back surface of the protruding electrode. 3. The semiconductor device according to claim 1, wherein a thin film layer made of a material having a lower resistance than the material of the projecting electrode is formed on a contact surface of the projecting electrode with a wiring pattern at a tip end. 4. The semiconductor device according to claim 2, wherein a convex portion for reflecting light incident from an outer peripheral portion of the semiconductor element to a rear surface of the projection electrode is provided on a rear surface of the semiconductor element. 5. A wiring pattern formed on a substrate, and a protruding electrode formed on a back surface of a semiconductor element to be mounted is brought into contact with and electrically connected to the wiring pattern formed between the substrate and the back surface of the semiconductor element. When manufacturing a semiconductor device in which a semiconductor element is fixed to a substrate by an insulating adhesive resin interposed in the substrate, a photocurable insulating adhesive resin is supplied to a mounting position of the semiconductor element on the substrate, and a back surface of the semiconductor element is provided. The protruding electrode of the semiconductor element is brought into contact with the protruding electrode of the semiconductor element on the wiring pattern of the substrate with the light-transmitting protruding electrode formed on the substrate facing the substrate and electrically connected to the substrate. Irradiating light from a light source between the semiconductor element and the semiconductor element to cure the insulating adhesive resin between the outer peripheral portion of the semiconductor element and the projecting electrode, and the back surface of the projecting electrode with respect to the light incident direction. The insulating connection of The method of manufacturing a semiconductor device for position fixing the resin to the semiconductor element on the substrate is cured with light transmitted through the projection electrodes. 6. A wiring pattern formed on a substrate, and a protruding electrode formed on a back surface of a semiconductor element to be mounted is brought into contact with and electrically connected to the wiring pattern formed between the substrate and the back surface of the semiconductor element. When manufacturing a semiconductor device in which a semiconductor element is fixed to a substrate by an insulating adhesive resin interposed in the substrate, a photocurable insulating adhesive resin is supplied to a mounting position of the semiconductor element on the substrate, and a back surface of the semiconductor element is provided. The protruding electrode of the semiconductor element is brought into contact with the protruding electrode of the semiconductor element on the wiring pattern of the substrate with the light-transmitting protruding electrode formed on the substrate facing the substrate and electrically connected to the substrate. Irradiating light from a light source between the semiconductor element and the semiconductor element to cure the insulating adhesive resin between the outer peripheral portion of the semiconductor element and the projecting electrode, and the back surface of the projecting electrode with respect to the light incident direction. The insulating connection of The resin is provided between the substrate and the back surface of the semiconductor element, and a projection provided on the inside of the outer periphery of the semiconductor element with respect to the projection electrode of the semiconductor element. A method of manufacturing a semiconductor device in which a semiconductor element is fixed on a substrate by being reflected on the back surface of the substrate and cured.