WO2010050209A1 - Method and apparatus for bonding electronic component and flexible film substrate - Google Patents
Method and apparatus for bonding electronic component and flexible film substrate Download PDFInfo
- Publication number
- WO2010050209A1 WO2010050209A1 PCT/JP2009/005714 JP2009005714W WO2010050209A1 WO 2010050209 A1 WO2010050209 A1 WO 2010050209A1 JP 2009005714 W JP2009005714 W JP 2009005714W WO 2010050209 A1 WO2010050209 A1 WO 2010050209A1
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- WIPO (PCT)
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- flexible film
- thermosetting resin
- film substrate
- electronic component
- joining
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Definitions
- the present invention relates to a bonding method and a bonding method in which an electronic component is bonded to a flexible film substrate bonded to a reinforcing plate via a thermosetting resin in order to increase the accuracy of a circuit pattern accompanying weight reduction and downsizing of an electronic product. Relates to the device.
- the application product of the present invention include MEMS, an image sensor, and the like in addition to COF described later.
- COF Chip on Film
- IC Integrated Circuit
- the gold bumps on the IC side and the circuit pattern of the mounting area in the flexible film substrate, that is, the inner leads are joined by thermocompression bonding.
- thermocompression bonding tin formed on the inner lead surface by plating and gold on the bump surface are eutectic bonded.
- the inner lead has a fine pitch, tin on the inner lead surface flows to the inner lead surface and the inner lead end portion and forms a bump, which causes a short circuit between adjacent inner leads. Therefore, it is attempted to reduce the thickness of the tin to avoid a short circuit of the inner lead.
- ACF Adisotropic Conductive Film
- NCP Non Conductive Paste
- NCF Non Conductive Film
- NCP or NCF that does not contain a conductive material is preferably used as a bonding material applied to fine pitch mounting.
- NCP or NCF is a paste or film of thermosetting resin, which is formed between an electronic component and a circuit pattern, and after the electronic component is pressed, the resin is cured and bonded. As the resin cures and shrinks, the bump and the inner lead are bonded more firmly. Further, it can be bonded at a low temperature compared to gold-tin eutectic bonding, and the load on the apparatus is small. However, slippage of both the IC bump and the inner lead during crimping may cause a large positional shift, resulting in poor conduction.
- thermosetting resins can be cured by heating or heating electromagnetic waves from the circuit pattern side to the IC (see, for example, Patent Document 3).
- a resin layer (referred to as a solder resist layer) for protecting the circuit pattern is formed on the circuit pattern formed on the flexible film in addition to the thermosetting resin layer for mounting.
- heat quantity higher than the curing temperature of the thermosetting resin is supplied in consideration of heat radiation to the pressure tool that presses the IC or IC against the flexible film substrate.
- the heat resisting temperature of the solder resist resin is usually 230 ° C. to 260 ° C., but a thermosetting resin such as NCP or NCF is cured at 200 ° C. to 250 ° C. That is, the temperature required for curing is higher than the heat resistant temperature of the solder resist in consideration of the heat dissipation. Therefore, if the entire flexible film substrate is heated from the reinforcing plate side, for example, by electromagnetic wave heating with respect to the flexible film substrate, the solder resist will be discolored by heating at a temperature higher than the heat-resistant temperature, resulting in appearance and performance problems. To do.
- the solder resist layer When the thermosetting resin is heated from the stage side on which the flexible film substrate with a plate is placed, the solder resist layer is discolored when the heat resisting temperature of the solder resist layer, which is a protective film on the circuit pattern, is lower than the heating temperature. End up. This discoloration results in poor appearance, and in some cases, the solder resist layer is deteriorated, and there is a possibility that the insulation reliability is lowered.
- the present invention A joining method for joining an electronic component to a flexible film substrate on which a flexible film is bonded via a reinforcing plate and a peelable organic material layer, and forming a thermosetting resin layer on the flexible film substrate After (1) The electronic component is pressed against the thermosetting resin formed on the flexible film substrate, and in this state, the thermosetting resin is heated to a temperature lower than the curing temperature to bond the electronic component on the flexible film substrate. A first step of disposing the electronic component, and (2) a second step of joining the electronic component by heating the bonding position of the thermosetting resin above the curing temperature while applying a load to the electronic component.
- a method for joining an electronic component and a flexible film substrate comprising:
- the especially preferable aspect of this invention has the process of heating the said thermosetting resin layer of an electronic component joining position more than a hardening temperature from the downward direction of the said flexible film board
- another aspect of the present invention is a bonding apparatus for bonding an electronic component to a flexible film substrate having a plurality of regions in which a solder resist is formed and a region in which a thermosetting resin is formed.
- a stage that holds the flexible film substrate, a pressurizing unit that is disposed above a position where the flexible film substrate is held by the stage, and that presses the electronic component against the flexible film substrate;
- the bonding apparatus includes a heating unit that is disposed below a position where the flexible film substrate is held and selectively heats a region to which the thermosetting resin is applied.
- the solder resist formed on the flexible film substrate can be joined to the electronic component and the flexible film substrate without being damaged by heat.
- substrate with a reinforcement board Schematic of the electronic component mounting method of this invention. Schematic which shows the whole shape of the joining apparatus of the 2nd step of this invention. Schematic which shows another preferable form whole shape of the joining apparatus of the 2nd step of this invention. Schematic in the case of using a heat shut-off mask and a heat source as heating means in the second step bonding apparatus of the present invention.
- FIG. 4 is a schematic view when a heating resistor is arranged on a protrusion on a stage as a heating means in the second step joining apparatus of the present invention.
- the schematic diagram in the case of adjusting individually the pressurization amount and / or parallelism of an electronic component in the joining apparatus of the 2nd step of this invention.
- the peelable organic material layer 2 is formed on the sheet reinforcing plate 3, and the flexible film 1 is bonded thereon using a laminator device.
- the reinforcing plate 3 is preferably one that efficiently transmits heat applied to the thermosetting resin used for joining to the electronic component, and inorganic glass such as soda lime glass, borosilicate glass, and quartz glass is used. These are also preferably transparent to electromagnetic waves. This is because electromagnetic waves can also be used as a heating means. When infrared rays are used as a heat source, silicon is also transmissive and can be used as a reinforcing plate.
- an acrylic or urethane-based pressure-sensitive adhesive is used as the peelable organic substance layer 2.
- the flexible film 1 is obtained by forming a metal film on one side of an insulating film by sputtering or vacuum deposition.
- plastic films such as polycarbonate, polyether sulfide, polyethylene terephthalate, polyethylene naphthalate, polyphenylene sulfide, polyimide, polyamide, and liquid crystal polymer can be used.
- the metal coating may be provided with a base layer for enhancing adhesion to the base insulating film.
- a polyimide film has good adhesion with a nickel-chromium alloy formed by sputtering.
- a copper film is formed on the nickel-chromium alloy layer by sputtering. This is because this copper film has a small resistance value, is excellent as a wiring material, and has a sufficiently strong adhesive force with the copper plating used for forming the circuit pattern 4.
- the circuit pattern 4 is formed on the flexible film bonded to the reinforcing plate.
- the circuit pattern 4 is usually formed mainly by copper by a subtractive method, a semi-additive method, or the like.
- a semi-additive method is preferably used for the fine pitch.
- the semi-additive construction method usually depends on the following procedure. After forming a photoresist pattern in a place where the conductor of the circuit pattern is not formed, a copper film is deposited in a place where there is no photoresist pattern by electrolytic copper plating. Thereafter, after removing the photoresist pattern, the portion of the metal film where the photoresist pattern has been formed is removed by etching. Then, the protective layer of the part formed as a conductor is formed. The protective layer is formed by depositing tin plating, gold plating, or the like, or adsorbing a rust inhibitor on the copper surface.
- the conductor portion of the circuit pattern 4 is formed of a metal film, a copper film by plating, and a protective layer. These structures are collectively referred to as a “metal layer”.
- the circuit pattern 4 will be described as a region including a metal layer having such a configuration.
- the metal layer can adopt other configurations as appropriate.
- the circuit pattern includes a mounting area where electronic components are mounted, a fan-out area, a test pad area, and the like.
- many circuit patterns in the case of COF, called inner leads
- inner leads for joining with bumps for joining electronic components are often formed in parallel.
- the inner lead width is reduced to a few tens of ⁇ m, and the interval between adjacent inner leads is also reduced to a few tens of ⁇ m.
- thermosetting resin layer 6 for bonding the electronic component and the inner lead is applied on the flexible film substrate.
- a composition of the thermosetting resin an epoxy resin, a polyamideimide resin, a polyimide resin, a polyurethane resin, a phenol resin, a melamine resin, an unsaturated polyester resin or the like is preferably used as a main agent, and a curing agent for accelerating the curing reaction. Is added. A curing agent having high reactivity with the main resin is used, and an epoxy resin is often used.
- a one-component type in which a curing agent is preliminarily mixed with the main agent is preferable in order to simplify the process, but a two-component type in which the main agent and the curing agent are kneaded and used before coating can also be employed.
- thermosetting resin layer In order to form the thermosetting resin layer on the electronic component mounting portion, a dispenser or printing is used as a coating method.
- the printing method is preferable in that the thermosetting resin layer 6 can be formed on a plurality of circuit patterns at a time and the productivity is high.
- the printing method keep the printed shape of the applied thermosetting resin and prevent the foreign matter from sticking to the thermosetting resin surface before joining the electronic components. It is desirable to dry for a short time to evaporate the solvent.
- thermosetting resin near the inner lead or the bump of the electronic component after the electronic component is bonded, it causes a decrease in bonding reliability and insulation reliability.
- Many thermosetting resins formed by a dispenser or printing method have a high viscosity and have a relatively low fluidity. Therefore, when the inner lead interval is narrow, there is a risk of voids. In order to avoid generation of voids, it is preferable to heat the flexible film substrate so as to enhance the fluidity of the thermosetting resin.
- the applied thermosetting resin layer can be heated by heating a stage on which the flexible film substrate is placed at the time of joining electronic components. It is sufficient that the heating temperature is such that the fluidity of the resin is obtained, while it is within the range below the curing temperature.
- the heating temperature is preferably about 100 ° C.
- the generation of voids in the thermosetting resin is one of the causes of moisture in the flexible film substrate.
- the heating temperature is sufficient if water in the flexible film substrate can be removed, and 80 ° C to 130 ° C is preferably used.
- the heating temperature is set to be lower than the curing temperature of the thermosetting resin.
- the heating time for avoiding voids is set so that the moisture in the flexible film substrate is sufficiently removed.
- heating for removing moisture in the flexible film substrate can be performed before applying the thermosetting resin.
- the heating conditions can be determined regardless of the curing temperature of the thermosetting resin.
- the flexible film absorbs moisture during the waiting period until the first step after heat drying, it is preferable to take measures to set an upper limit for the waiting time or keep the storage atmosphere at a low humidity.
- FIG. 2 shows a first step of pressing the electronic component below the curing temperature of the thermosetting resin.
- the curing temperature is defined as a temperature at which 85% or more of the components contributing to the reaction react (the curing degree is 85% or more).
- the degree of cure of the thermosetting resin can be quantitatively determined from the decreasing rate of the peak intensity of the reactive group contributing to the binding, for example, by FT-IR (Fourier Transform Infrared Spectrometer) analysis. Taking a bisphenol type epoxy resin as an example, epoxy groups are consumed before and after curing. On the other hand, since the ratio of the benzene ring does not change, if the ratio of the peak intensity derived from the epoxy group to the peak intensity derived from the benzene ring is reduced by 85% or more after curing, the curing degree is 85% or more. become.
- FT-IR Fastier Transform Infrared Spectrometer
- the flexible film substrate bonded to the reinforcing plate 3 is fixed to the stage 9.
- vacuum suction by the stage 9 is preferably used.
- the end portion of the flexible film substrate may be mechanically pressed together with the reinforcing plate with a chuck.
- the heating / pressurizing tool 8 preferably has an adsorption mechanism. This is because the electronic component can be easily adsorbed and held by making a fine hole in the porous ceramics or electronic component contact surface. A tool for moving the electronic component to the circuit pattern mounting region may be prepared separately from the heating / pressurizing tool 8.
- the electronic component 7 is temporarily bonded to the inner lead portion.
- the purpose of this first step is to align the electronic components with high accuracy and to fix the electronic components to such an extent that no positional deviation will occur in later steps.
- Electronic parts include electronic parts such as ICs, capacitors and resistors. These electronic components are provided with bonding bumps and pads on the bonding surfaces of the electronic components.
- the heating / pressurizing tool 8 sucks one electronic component 7 from a storage tray (not shown) of electronic components set in the apparatus.
- the position controller 11 of the heating / pressurizing tool 8 calculates the positional deviation amount of both alignment marks, and adjusts the position of the heating / pressurizing tool 8 to correct the positional deviation amount. After that, the heating / pressurizing tool 8 is lowered to press the adsorbed electronic component against the inner lead. At this time, with the electronic component pressed against the inner lead, the thermosetting resin is heated to a temperature lower than the curing temperature, and the thermosetting resin is cured to some extent to temporarily press-bond and the electronic component aligned with high accuracy is obtained. It is possible to prevent positional displacement during handling up to the next process.
- thermosetting resin in the mounting area is heated.
- the first step of temporary pressure bonding can be performed simultaneously by attracting a plurality of electronic components to one head. However, in order to achieve high-precision bonding, it is preferable to temporarily pressure bond one by one.
- the pressing pressure in the second step can be reduced by keeping the distance between the bumps of the electronic component and the inner leads of the circuit pattern across the thermosetting resin.
- the second step there is an effect that the bumps of the electronic component are less likely to slip on the inner lead, and the bonding deviation is less likely to occur.
- thermosetting resin is completed and the electronic components are joined, and the pressing pressure at the time of curing the thermosetting resin is large and the positional deviation is likely to occur.
- the joining step into two, the problem of misalignment can be avoided.
- the bonding step into two, the temperature of the first press bonding can be lowered, and the effect of simplifying the heat transfer prevention measures or the heat dissipation measures of the high-precision alignment and the first step bonding apparatus. There is.
- the heating temperature in the first step is preferably as high as possible within a range lower than the curing temperature of the thermosetting resin in order to improve the fluidity of the thermosetting resin. However, the heating temperature is set after confirming that there is no performance deterioration of the thermosetting resin.
- the thermosetting resin can be heated from the heating / pressurizing tool 8 through the electronic component. By using porous ceramics for the heating / pressurizing tool 8 and incorporating a ceramic heater, a heating / pressurizing tool having a heating mechanism and an electronic component adsorption mechanism can be obtained.
- ⁇ Pressure for pressing the electronic component against the inner lead is determined in consideration of the load applied in the second step.
- a slightly weaker pressure is applied so that the electronic component 7 is accurately aligned and fixed to the inner lead.
- a slightly higher pressure is applied so that the electronic component 7 can be joined to the inner lead without being displaced.
- 15 to 30 gf / one bump of electronic component
- it may be about 3 to 10 gf / (one electronic component bump).
- the heating and pressurizing time is set so that the electronic component and the circuit pattern can be stably aligned and the accuracy can be maintained until the next step.
- it depends on the temperature rise rate and temperature stability of the heater, it is preferably 0.3 to 3 seconds, more preferably 0.5 to 1 second.
- thermosetting time of the thermosetting resin used for bonding electronic components is 5 seconds to several tens of seconds, which is 0.1 to 1.5, which is the bonding time for metal bonding using gold-tin eutectic, which is currently the mainstream. Long compared to about a second. Therefore, when the electronic parts are pressurized and heated one by one, the production efficiency is lowered.
- thermosetting resin can be cured simultaneously for a plurality of electronic components, thereby improving productivity. Even if a thermosetting resin having a long joining time is used, production efficiency can be maintained.
- One of the preferred embodiments of the present invention is to heat the flexible film substrate from the reinforcing plate side when joining the electronic component to the flexible film substrate in the second step.
- the load on the device design can be greatly reduced by separating the mechanism for pressing the electronic component and the mechanism for heating and curing the thermosetting resin. That is, the equipment structure can be simplified and the equipment cost can be reduced. The effect of separating the mechanism is particularly great when the equipment simultaneously joins a plurality of electronic components.
- FIG. 3A is a front view of the apparatus
- FIG. 3B is a side view of the apparatus.
- FIG. 3 the state after moving the flexible film board
- the second step can be performed on the stage 9 of FIG.
- the pressing tool 21 used in the second step may move while the flexible film substrate 100 attached to the reinforcing plate 3 is attracted and held by the stage 9 in FIG. You may move the flexible film board
- FIG. 3 shows the overall configuration of the bonding apparatus of the second step of the present invention, but the bonding apparatus of the present invention is not limited to this.
- the joining apparatus of the present invention includes a stage 20 that holds a flexible film substrate 100 attached to a reinforcing plate 3, and a pressure tool 21 that presses an electronic component disposed on the flexible film substrate.
- the area of the lower surface of the pressing tool facing the electronic component is not particularly limited as long as it normally presses the electronic component.
- the one larger than the area of the upper surface of the electronic component is preferable. However, even if it is smaller than the area of the upper surface of the electronic component, it is only necessary that the electronic component is reliably pressed against the flexible film substrate.
- the pressure tool has an area capable of pressing all of the electronic components.
- pressing multiple electronic components at the same time or “joining multiple electronic components at the same time” means that a plurality of target electronic components can be pressed at a time, as described above.
- the pressure tool is used to press and bond the electronic component to the flexible film circuit board.
- the pressing operations of the respective pressing tools are synchronized. Implementation. That is, when using a plurality of pressurizing tools, there may be a deviation in the pressurizing operation as long as it does not affect the predetermined tact time.
- forming the circuit pattern in an array means a state in which the electronic components arranged on the flexible film substrate are linearly adjacent in the range of the width of the pressing tool. This is because the purpose is to allow a plurality of electronic components to be joined simultaneously by a single press with a pressurizing tool. Therefore, the arrangement of the electronic components arranged in an array may be composed of a single column or row as well as a plurality of columns or rows. In addition, when electronic components are arranged in a single column or row, it may be said that the components are arranged in a column. When pressurizing a plurality of electronic components at the same time, the load is obtained by multiplying the number of electronic products by the pressurization per electronic component.
- the pressure tool 21 has a heat insulating / cushioning material 22 at the tip. Further, the pressurizing tool 21 is fixed to a support 23, and the support is fixed to an air-driven pressurizing device (not shown). The support 23 is moved downward by the operation of the pressurizing device, so that the pressurizing tool can contact and pressurize the electronic component 24.
- the column 23 and the like are supported by an arm 25 above the stage 20. The arm 25 is further fixed to the apparatus frame.
- the electronic component can be more reliably pressed against the flexible film substrate if the portion facing the electronic component has a convex shape.
- the cushion material and heat-resistant material to be attached to the lower surface of the pressurizing tool can be easily attached and replaced, and (2) Pressurization is performed even when the joining position of the electronic component to the flexible film substrate is changed. It is desirable that the tool be flat because no tool change is required.
- thermosetting resin examples include incorporating a heating means in the pressure tool, providing a means for heating from the stage side, and a combination of both.
- One of the preferred embodiments of the present invention is to heat the flexible film substrate from the reinforcing plate side (that is, the stage side) in the second step as described above.
- the pressurizing tool is not heated, it is preferable to provide a cooling mechanism for the pressurizing tool so that the joining temperature condition in the second step can be made constant irrespective of the apparatus operating time and the joining time cycle.
- the pressure tool 21 does not have a heating means and a heat source is arranged above the stage 20, in order to uniformly heat the thermosetting resin in the mounting area, it does not interfere with the operation of the pressure tool 21. It is necessary to arrange a heat source around the four sides of the pressing tool 21. However, such an arrangement is not preferable because it sufficiently secures the arrangement space of the heat source and adds measures to block heat transfer from the heat source to the drive mechanism and the positioning mechanism, resulting in complicated facilities.
- the heating means has a heating means using electromagnetic waves for curing the thermosetting resin.
- the heating means is disposed below the stage 20.
- 12 is an electromagnetic wave generation source
- 13 is a reflector for directing the electromagnetic wave toward the thermosetting resin
- 14 is a backup block
- 15 is an electromagnetic wave generation controller
- 16 is a heat exchanger
- 17 is an electromagnetic wave.
- the heating means is not limited to this, and a heating wire heater may be used, or an electromagnetic wave such as a halogen heater or an ultraviolet lamp may be used.
- FIG. 4 has a heating means 27 for selectively curing the thermosetting resin.
- the heating means is disposed below the stage 20, and FIG. 4 illustrates the case of a laser light source which is an embodiment of the heating means.
- “selective” means that the thermosetting resin formed on the flexible film is heated to such an extent that it is cured, and is heated to such an extent that the solder resist that is a protective material for the circuit pattern is altered or discolored. It means not to. The discoloration of the solder resist layer results in poor appearance, and in some cases, the solder resist layer may be deteriorated, resulting in a decrease in insulation reliability.
- the heating means is not limited, and a heating wire heater may be used, or an electromagnetic wave such as a halogen heater or an ultraviolet lamp may be used.
- 5 to 8 show an embodiment in which the electronic component 24 is completed in the second step from the state where the electronic component 24 is preliminarily pressure-bonded to the inner lead via the thermosetting resin layer 6 in the first step. Yes.
- the upward direction and the downward direction are directions of arrows in the figure.
- the electronic component and the inner lead are aligned with accuracy and temporarily press-fitted, so that an alignment mechanism is not necessary in the second step.
- the tool that presses the electronic component 24 may have only the pressurizing function without the heating function.
- a heat insulating / cushioning material 22 is disposed on the contact surface of the pressing tool 21 with the electronic component 24.
- the pressurizing tool that presses the electronic component 24 omits the heating function and has only the pressurizing function, so that it is not necessary to heat the electronic component and the thermosetting resin via the heat insulating material. Therefore, thermal deterioration of the heat insulating material can be suppressed and the replacement frequency can be reduced.
- a heat blocking mask 28 having an opening substantially the same as the electronic component is inserted between the reinforcing plate and the heating means so that the thermosetting resin is selectively heated. Thereby, the amount of heat from the heat source 30 below the stage 20 passes only through the opening, and the thermosetting resin is cured.
- the heat blocking mask can be manufactured by forming a material that reflects heat on the glass plate other than the opening.
- a heat-shielding mask may be manufactured by forming a metal plate having a reflective material on the entire surface and forming a through hole substantially the same type as an electronic component. Further, the heat blocking mask may absorb heat or electromagnetic waves so that portions other than the openings are not allowed to pass through.
- the heat-shielding mask may be translucent, and the entire flexible film substrate may be heated to a temperature lower than the curing temperature of the thermosetting resin, and the electronic component bonding portion may be heated to the thermosetting resin curing temperature or higher.
- the material of the stage 20 It is important to select a material that efficiently transmits or permeates the heat source as the material of the stage 20.
- an electromagnetic wave source it is preferable to employ inorganic glass or quartz that transmits electromagnetic waves as the stage material.
- an infrared ray generation source silicon that transmits infrared rays can be employed.
- the heat shielding mask material is disposed between the stage 20 and the heat source 30 in FIG. 5, the heat shielding mask material may be disposed on the upper surface 29 (a) of the stage 20.
- a reflective material may be formed on the back surface 29 (b) and used as a mask.
- a heat cutoff mask may be embedded in the stage 20. If the stage 20 itself has a heating cutoff mask function, there is a possibility that the stage 20 is prepared for each type of workpiece, which may reduce productivity.
- FIG. 6 shows an example in which heating by the laser 31 is employed to selectively heat the thermosetting resin.
- the laser include a solid laser, a gas laser, and a semiconductor laser.
- semiconductor lasers a red laser having a frequency of 650 nm or an infrared laser having a frequency of 780 nm or 830 nm is preferably used because it is industrially inexpensive and small. It is important to select a laser wavelength in the wavelength region that the thermosetting resin absorbs.
- thermosetting resin In order to efficiently heat the thermosetting resin, it is necessary to concentrate the laser light in consideration of the transmittance of the material arranged between the laser and the thermosetting resin layer and the distance between the laser and the thermosetting resin layer. Optimize. Materials between the laser and the thermosetting resin are the stage 9, the reinforcing plate, and the flexible film. The transmittance of each material is measured, and the laser installation position is determined in consideration of the curvature of the laser condenser lens.
- the number of lasers to be installed can be cured with high productivity by obtaining the necessary number of arrangements from the output area of one laser and efficiently moving the range to be heated.
- Making the arrangement position of the laser movable is a preferable aspect because it can easily cope with a change in the application position of the thermosetting resin on the flexible film.
- FIG. 7 shows an example in which a lamp 32 is used as the heating means so that the thermosetting resin is selectively heated.
- the lamp include a halogen lamp, a halogen spot heater, a high-intensity LED lamp, a metal halide lamp, a high-pressure sodium lamp, and a mercury lamp.
- a lamp having a wavelength region that is absorbed by the thermosetting resin used is employed.
- the light is guided from the lamp 32 through the light guide path 33, and only the thermosetting resin is selectively heated by irradiating the thermosetting resin applied on the flexible film from the lower side of the stage 20.
- An optical fiber can be suitably used for the light guide path 33, but a small mirror may be combined.
- the light may be concentrated with a reflector or a condenser lens and incident on the optical fiber.
- An optical fiber output type semiconductor laser unit using a semiconductor laser may be used instead of the lamp. Also in this example, it is important that the stage 20 is made of a light transmissive material.
- FIG. 8 shows another mode for selectively heating the thermosetting resin.
- a projection 34 is provided on the stage 20 and a heater 35 is provided on the projection to heat the projection 34.
- the protrusion is arranged in accordance with the position where the electronic component is temporarily crimped.
- FIGS. 9 and 10 show an apparatus having a pressurizing means for adjusting the amount of pressurization and the parallelism with respect to each electronic component when the thermosetting resin is heated while pressurizing a plurality of electronic components. An example is shown.
- FIG. 9 shows a pressing means constituted by an independent pressing tool for each electronic component.
- Each pressing tool can independently adjust the parallelism of the electronic component with respect to the stage.
- Each pressurizing tool can individually adjust the indentation pressure. Accordingly, by defining the upper limit of the indentation pressure at the time of pressurizing the electronic component, the pressurizing amount at the time of joining can be adjusted for each electronic component.
- the bump heights of the electronic components to be joined may not all be manufactured at the same height, and further, there may be uneven wiring thickness of the flexible film substrate and uneven thickness of the reinforcing plate. In such a case, some electronic components are not sufficiently pressurized. Therefore, by providing a pressure tool for each individual electronic component, all electronic components can be reliably joined even when there is a variation.
- FIG. 10 shows another embodiment of a pressurizing means for simultaneously joining a plurality of electronic components having different heights.
- the cushion bag body 37 By placing the cushion bag body 37 between the arm 25 and the electronic component, the pressure amount and / or parallelism can be individually adjusted for the electronic component.
- the cushion bag body is filled with a liquid 38 such as oil.
- the surface of the flexible film substrate on which a plurality of electronic components having different heights are arranged is uneven. However, the surface of the cushion bag body is deformed along the unevenness, and an almost equal pressure can be applied to the contacted electronic component.
- the liquid in the cushion bag body can be heated to assist the curing of the thermosetting resin in the second step. Furthermore, if the liquid in the cushion bag is circulated between the external cooling and heating device so that the liquid in the cushion bag is maintained at a constant temperature, the bonding temperature conditions in the second step are the device operating time and the bonding. This is preferable because it can be made constant regardless of the time cycle.
- UV curable adhesive “SK Dyne” SW-11A manufactured by Soken Chemical Co., Ltd.
- curing agent L45 Soken Chemical ( Co., Ltd.) was mixed at 100: 3 (weight ratio) and dried at 80 ° C. for 2 minutes to obtain a peelable organic layer.
- the peelable organic layer thickness after drying was 3 ⁇ m.
- an air blocking film a film in which a silicone resin layer that can be easily released on a polyester film
- the aforementioned polyimide film provided with a metal layer was cut out to 370 ⁇ 470 mm.
- a polyimide film provided with a metal layer on an organic layer that can be peeled off by a laminator apparatus (not shown) that can be attached so that no stress is applied to the film was attached.
- the organic layer was cured by irradiating with 1000 mJ / cm 2 of ultraviolet rays from the glass substrate side.
- a positive photoresist was coated on the copper film with a slit die coater and dried at 80 ° C. for 10 minutes. The photoresist was exposed and developed through a photomask to form a photoresist layer having a thickness of 12 ⁇ m in a portion where a plating film was unnecessary.
- the photomask pattern for forming the circuit pattern has the following shape. On two long sides of a 19.3 mm ⁇ 2.5 mm rectangle, 772 wires (width 10 ⁇ m, length 5 mm) per side were arranged as inner leads at a pitch of 25 ⁇ m. 772 wires (width) at a pitch of 50 ⁇ m so that the outermost ends are in contact with the two long sides of the rectangle of 38.6 mm ⁇ 23.75 mm in the same center as the rectangle of 19.3 mm ⁇ 2.5 mm. 25 ⁇ m, length 100 ⁇ m) were arranged as outer leads.
- One unit consisting of an inner lead and an outer lead connected by a one-to-one wiring with a width of 10 ⁇ m was taken as one unit.
- This unit was arranged in 8 rows at a 40.6 mm pitch, equally spaced from the center in the direction where the glass substrate was 370 mm long.
- Eighteen glass substrates were arranged at a 24.0 mm pitch from the center in the direction of 470 mm length.
- a copper layer having a thickness of 8 ⁇ m was formed by electrolytic plating in a copper sulfate plating solution using the copper film as an electrode.
- the photoresist was stripped with a photoresist stripping solution, and then the copper film and the chromium-nickel alloy film that were under the resist layer were removed by soft etching with a hydrogen peroxide-sulfuric acid aqueous solution.
- a tin layer having a thickness of 0.4 ⁇ m was formed on the copper plating film by electrolytic plating to obtain a circuit pattern.
- solder resist NPR-3300NH manufactured by Nippon Polytech Co., Ltd.
- NAMICS NCP resin 8364-160 (Tg: 120 ° C., curing temperature: 200 ° C. (5 seconds)) is a thermosetting resin, and the dispenser device FAD-320S manufactured by Musashi Engineering is used as the inner lead part of the circuit pattern. After coating on the inside, it was semi-cured in a baking oven at 80 ° C. for 30 seconds.
- a first step of positioning a 20.0 mm ⁇ 3.0 mm silicon IC chip as an electronic component with an IC bonding apparatus FC-2000 (manufactured by Toray Engineering Co., Ltd., one heating / pressurizing tool) is performed. It was.
- the IC chip was held with a heating / pressurizing tool made of porous ceramics, and the heating / pressurizing tool was heated with a ceramic heater and pressed against the NCP resin.
- the stage temperature on which the flexible film substrate was placed was set to 100 ° C.
- the setting conditions for FC-2000 are as follows: the set temperature is 120 ° C, the pressing pressure of the heating / pressurizing tool is 5 kg / chip (3.2 g / bump), and the heating / pressurizing time is 1.0 second (chip transport, position) 3.0 seconds including the total). In this case, the working time per flexible film substrate was 432 seconds.
- the second step was performed with the IR bonder shown in FIG.
- the contact area with the IC chip was set to 360 mm ⁇ 4 mm so that the pressing tool could simultaneously press eight IC chips in a row.
- the output was set so that the NCP portion was 200 ° C. from the reinforcing plate side by the near infrared irradiation mechanism.
- the pressing tool was pressed for 5 seconds with a load of 15 kg / chip (9.7 g / bump). Since it took 2 seconds to transport the substrate after pressure bonding, the working time per flexible film substrate was 126 seconds of 18 rows ⁇ (5 + 2) seconds.
- the IC chip mounting time per flexible film substrate is 558 seconds, which is 55.3% of the working time of Comparative Example 1 (in the case of one heating / pressurizing tool) of 1008 seconds. 44.7%.
- Example 2 A flexible film substrate was prepared in the same manner as in Example 1.
- Example 1 except that the heating / pressurizing means in the second step has a contact area of 360 mm ⁇ 2 mm with the IC chip arranged in parallel in two rows at a pitch of 24 mm and the ICs are heated / pressurized in 8 rows / rows at the same time in two rows simultaneously
- An IC chip was mounted in the same manner as described above.
- the working time per flexible film substrate in the first step was 432 seconds.
- the working time per flexible film substrate was 9 rows ⁇ (5 + 2) seconds, 63 seconds.
- the IC chip mounting time per flexible film substrate is 495 seconds, which is 49.1% of the working time of Comparative Example 1 (in the case of one heating / pressurizing tool) of 1008 seconds.
- the reduction was 50.9%.
- Example 3 An IC chip was mounted in the same manner as in Example 1 except that the number of heating / pressurization tools of the IC bonding apparatus FC-2000 used in the first step was changed to two. Two heating / pressurizing tools were placed, programmed so that the two heating / pressurizing tools would not interfere with each other, and the FC-2000 was modified so that electronic components were efficiently removed from the dedicated tray and positioned.
- the working time per flexible film substrate in the first step was 216 seconds.
- the working time per flexible film substrate was 126 lines of 18 rows ⁇ (5 + 2) seconds.
- the IC chip mounting time per flexible film substrate is 342 seconds, which is 67.9% of the working time of Comparative Example 2 (in the case of two heating / pressurizing tools) of 504 seconds. This was a 32.1% reduction.
- Example 4 The heating / pressurizing tool of the IC bonding apparatus FC-2000 used in the first step is set to two, and the heating / pressurizing means in the second step has a contact area of 360 mm ⁇ 2 mm with the IC chip.
- An IC chip was mounted in the same manner as in Example 1 except that two rows were arranged in parallel at a pitch of 24 mm and two IC chips were simultaneously heated and pressurized at two rows.
- the working time per flexible film substrate in the first step was 216 seconds.
- the working time per flexible film substrate was 9 rows ⁇ (5 + 2) seconds, 63 seconds.
- the IC chip mounting time per flexible film substrate is 279 seconds, which is 55.4% of the working time of Comparative Example 2 (in the case of two heating / pressurizing tools) of 504 seconds. 44.6% reduction.
- thermosetting resin was cured in one step with an IC bonding apparatus FC-2000 (manufactured by Toray Engineering Co., Ltd.).
- the IC chip is 20.0 mm x 3.0 mm, the same as in Example 1.
- the IC chip is held with a heating / pressurizing tool made of porous ceramics, and the heating / pressurizing tool is heated with a ceramic heater and pressed against the NCP resin. It was.
- FC-2000 The setting conditions of FC-2000 are as follows: set temperature is 120 ° C, pressure of heating / pressurizing tool is 30 kg / chip (19.4 g / bump), heating / pressurization time is 5.0 seconds (chip transport, position 7.0 seconds including the total). The working time per flexible film substrate was 144 pieces ⁇ (5 + 2) seconds, which was 1008 seconds.
- Comparative Example 2 An IC chip was mounted in one step as in Comparative Example 1, except that the IC bonding apparatus FC-2000 (manufactured by Toray Engineering Co., Ltd.) had two heating / pressurizing tools.
- the setting conditions of FC-2000 are as follows: set temperature is 120 ° C, pressure of heating / pressurizing tool is 30 kg / chip (19.4 g / bump), heating / pressurization time is 5.0 seconds (chip transport, position 7.0 seconds including the total).
- the working time per flexible film substrate was 504 seconds of 72 ⁇ (5 + 2) seconds.
- Table 1 summarizes the working time of Example 1 and Comparative Example 2 described above. Since Examples 1 to 4 pressurize a plurality of IC chips at a time, the working time per one flexible film substrate is shortened compared to Comparative Examples 1 and 2. Further, since Comparative Examples 1 and 2 are bonded by one press, the positional deviation between the bumps of the electronic component and the inner lead was observed, whereas the example bonded by two steps of pressurization was No misalignment was observed. It has been demonstrated that the bonding method of the present invention can perform bonding positioning with high accuracy.
- Comparative Example 3 is the same as Example 1 as the joining procedure, and the total work time does not change.
- the heating temperature of the first step is different from that of the thermosetting resin.
- the heating temperature in the first step must be heated at a temperature lower than the curing temperature of the thermosetting resin used for bonding.
- Example 5 A flexible film substrate was prepared in the same manner as in Example 1. Further, in the same manner as in Example 1, an IC was temporarily bonded to the flexible film substrate in the first step. Subsequently, the thermosetting resin was cured with the bonding apparatus shown in FIG. Between the stage 9 made of glass on which the flexible film substrate with the reinforcing plate is placed and the near infrared heater, a heat blocking mask for selectively heating the mounting region of the flexible film substrate is installed.
- a quartz glass of 1.1 mm thickness is used as a mask material, chromium is sputtered on the glass surface for the purpose of reflecting a near-infrared heater, and 20.3 ⁇ 3 of the same size as the mounting area at the lower part of the mounting area. .5 mm was opened.
- the sputter surface was installed so as to face the near infrared heater.
- a near infrared heater was used as a heating means.
- the contact area with the IC chip was set to 360 mm ⁇ 4 mm so that the pressing tool could simultaneously press eight IC chips in a row.
- the output was set so that the NCP portion was 200 ° C. from the reinforcing plate side by the near infrared irradiation mechanism.
- the pressing tool was pressed for 5 seconds with a load of 15 kg / chip (9.7 g / bump).
- Example 6 A flexible film substrate was prepared in the same manner as in Example 1. Further, in the same manner as in Example 1, an IC was temporarily bonded to the flexible film substrate in the first step. Subsequently, NCP, which is a thermosetting resin, was cured in the same manner as in Example 5 except that a semiconductor laser was used as a means for selectively heating the mounting region of the flexible film substrate.
- NCP which is a thermosetting resin
- L9277 manufactured by Hamamatsu Photonics was used as the semiconductor laser.
- a flexible film substrate is placed on a stage using 2 mm thick glass, the distance between the lower surface of the stage and the semiconductor laser is 10 mm, and the mounting area is 20.3 ⁇ 3.5 mm by moving in the XY direction on the XY stage. Heated.
- Example 7 A flexible film substrate was prepared in the same manner as in Example 1. Further, in the same manner as in Example 1, an IC was temporarily bonded to the flexible film substrate in the first step. Subsequently, NCP, which is a thermosetting resin, was cured in the same manner as in Example 5 except that a halogen lamp was used as a means for selectively heating the mounting region of the flexible film substrate. As the halogen lamp, Moritex MHAB-150W-100V was used, and a heat-resistant light guide using a glass optical fiber as the light guide was used.
- Example 8 A flexible film substrate was prepared in the same manner as in Example 1. Further, in the same manner as in Example 1, an IC was temporarily bonded to the flexible film substrate in the first step. Subsequently, as a means for selectively heating the mounting area of the flexible film substrate, the thermosetting resin is the same as in Example 5 except that the stage immediately below the mounting area is protruded and the protrusion is heated. NCP was cured. As a heat source for heating, a cartridge heater made by Yoko was embedded in the stage protrusion.
- Example 1 to 4 the electronic components were aligned with high accuracy and then joined, and the working time could be shortened. However, a blackish discoloration occurred in the solder resist portion, and the appearance inspection was poor. This is because the entire flexible film substrate was heated by the near infrared irradiation mechanism from the reinforcing plate side during the heating for curing.
- Examples 5 to 8 are examples in which a method of selectively heating only a portion where a thermosetting resin for bonding exists is present from below the stage. Although the heating means is different, since only the portion where the thermosetting resin exists is heated, the appearance defect of the solder resist portion has been eliminated. That is, by selectively heating, the bonding method of the present invention was able to obtain a more preferable bonding result.
- the present invention can be widely used in a technique for joining and fixing an electronic component such as an IC to a flexible film substrate on which a flexible film circuit substrate is formed.
- the present invention can be used for electronic devices using lightweight and thin circuit boards such as small phones, liquid crystal televisions, and small televisions.
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Abstract
Description
補強板と剥離可能な有機物層を介して可撓性フィルムが貼り合わされた可撓性フィルム基板に電子部品を接合する接合方法であって、可撓性フィルム基板上に熱硬化型樹脂層を形成した後に、
(1)電子部品を可撓性フィルム基板上に形成された熱硬化型樹脂に押し当て、その状態で熱硬化型樹脂を硬化温度未満に加熱し、電子部品を可撓性フィルム基板上の接合位置に配置する第一のステップ、および
(2)電子部品に荷重をかけながら前記熱硬化型樹脂の接合位置を硬化温度以上に加熱して電子部品を接合する第二のステップ、
を有することを特徴とする電子部品と可撓性フィルム基板の接合方法である。 That is, the present invention
A joining method for joining an electronic component to a flexible film substrate on which a flexible film is bonded via a reinforcing plate and a peelable organic material layer, and forming a thermosetting resin layer on the flexible film substrate After
(1) The electronic component is pressed against the thermosetting resin formed on the flexible film substrate, and in this state, the thermosetting resin is heated to a temperature lower than the curing temperature to bond the electronic component on the flexible film substrate. A first step of disposing the electronic component, and (2) a second step of joining the electronic component by heating the bonding position of the thermosetting resin above the curing temperature while applying a load to the electronic component.
A method for joining an electronic component and a flexible film substrate, comprising:
2 剥離可能な有機物層
3 補強板
4 回路パターン
5 ソルダーレジスト
6 熱硬化型樹脂
7、24 電子部品
8 加熱・加圧ツール
9、20 ステージ
10 アライメントマーク認識用カメラ
11 位置制御用コントローラー
12 電磁波照射部
13 反射板
14 バックアップブロック
15 コントロールユニット
16 熱交換器
17 電磁波
21 加圧ツール
22 断熱・クッション材
23 支柱
26 フレーム
27、30 熱源
28 加熱遮断マスク
29(a) ステージ上面
29(b) ステージ下面
31 半導体レーザー
32 ランプ
33 導光路
34 ステージの突起
35 ヒーター
36 ヒーター加熱用電源
37 クッション袋体
38 液体
100 可撓性フィルム基板 DESCRIPTION OF
可撓性フィルム基板を実施例1と同様に準備し、さらに、実施例1と同様にして第1のステップで可撓性フィルム基板にICを仮圧着した。続けて、図4に示す接合装置で熱硬化型樹脂を硬化させた。補強板付き可撓性フィルム基板を載置するガラスで作製されたステージ9と近赤外線ヒーターの間に可撓性フィルム基板の実装領域が選択的に加熱される加熱遮断マスクを設置した。 (Example 5)
A flexible film substrate was prepared in the same manner as in Example 1. Further, in the same manner as in Example 1, an IC was temporarily bonded to the flexible film substrate in the first step. Subsequently, the thermosetting resin was cured with the bonding apparatus shown in FIG. Between the
可撓性フィルム基板を実施例1と同様に準備し、さらに、実施例1と同様にして第1のステップで可撓性フィルム基板にICを仮圧着した。続けて、可撓性フィルム基板の実装領域を選択的に加熱する手段として、半導体レーザーを用いたこと以外は実施例5と同様に熱硬化型樹脂であるNCPを硬化させた。 (Example 6)
A flexible film substrate was prepared in the same manner as in Example 1. Further, in the same manner as in Example 1, an IC was temporarily bonded to the flexible film substrate in the first step. Subsequently, NCP, which is a thermosetting resin, was cured in the same manner as in Example 5 except that a semiconductor laser was used as a means for selectively heating the mounting region of the flexible film substrate.
可撓性フィルム基板を実施例1と同様に準備し、さらに、実施例1と同様にして第1のステップで可撓性フィルム基板にICを仮圧着した。続けて、可撓性フィルム基板の実装領域を選択的に加熱する手段として、ハロゲンランプを用いたこと以外は実施例5と同様に熱硬化型樹脂であるNCPを硬化させた。ハロゲンランプとしてはモリテックス製MHAB-150W-100Vを用い、導光路としてガラス製光ファイバを用いた耐熱仕様のライトガイドを使用した。 (Example 7)
A flexible film substrate was prepared in the same manner as in Example 1. Further, in the same manner as in Example 1, an IC was temporarily bonded to the flexible film substrate in the first step. Subsequently, NCP, which is a thermosetting resin, was cured in the same manner as in Example 5 except that a halogen lamp was used as a means for selectively heating the mounting region of the flexible film substrate. As the halogen lamp, Moritex MHAB-150W-100V was used, and a heat-resistant light guide using a glass optical fiber as the light guide was used.
可撓性フィルム基板を実施例1と同様に準備し、さらに、実施例1と同様にして第1のステップで可撓性フィルム基板にICを仮圧着した。続けて、可撓性フィルム基板の実装領域を選択的に加熱する手段として、実装領域直下のステージを突起させ、その突起部を加熱すること以外は実施例5と同様に熱硬化型樹脂であるNCPを硬化させた。加熱するための熱源としては八光製カートリッジヒーターをステージ突起部に埋め込んだ。 (Example 8)
A flexible film substrate was prepared in the same manner as in Example 1. Further, in the same manner as in Example 1, an IC was temporarily bonded to the flexible film substrate in the first step. Subsequently, as a means for selectively heating the mounting area of the flexible film substrate, the thermosetting resin is the same as in Example 5 except that the stage immediately below the mounting area is protruded and the protrusion is heated. NCP was cured. As a heat source for heating, a cartridge heater made by Yoko was embedded in the stage protrusion.
Claims (17)
- 補強板と剥離可能な有機物層を介して可撓性フィルムが貼り合わされた可撓性フィルム基板に電子部品を接合する接合方法であって、可撓性フィルム基板上に熱硬化型樹脂層を形成した後に、
(1)電子部品を可撓性フィルム基板上に形成された熱硬化型樹脂に押し当て、その状態で熱硬化型樹脂を硬化温度未満に加熱し、電子部品を可撓性フィルム基板上の接合位置に配置する第一のステップ、および
(2)電子部品に荷重をかけながら前記熱硬化型樹脂の接合位置を硬化温度以上に加熱して電子部品を接合する第二のステップ、
を有することを特徴とする電子部品と可撓性フィルム基板の接合方法。 A joining method for joining an electronic component to a flexible film substrate on which a flexible film is bonded via a reinforcing plate and a peelable organic material layer, and forming a thermosetting resin layer on the flexible film substrate After
(1) The electronic component is pressed against the thermosetting resin formed on the flexible film substrate, and in this state, the thermosetting resin is heated to a temperature lower than the curing temperature to bond the electronic component on the flexible film substrate. A first step of disposing the electronic component, and (2) a second step of joining the electronic component by heating the bonding position of the thermosetting resin above the curing temperature while applying a load to the electronic component.
A method for joining an electronic component and a flexible film substrate, comprising: - 第二のステップで複数の電子部品の接合を同時に実施する請求項1記載の接合方法。 The joining method according to claim 1, wherein the joining of a plurality of electronic components is simultaneously performed in the second step.
- 第一のステップで複数の電子部品を列状に配置し、第二のステップで該配置された列状の複数の電子部品の接合を同時に実施する請求項2記載の接合方法。 The joining method according to claim 2, wherein a plurality of electronic components are arranged in a row in the first step, and the joining of the arranged electronic components in the second step is simultaneously performed.
- 第二のステップで複数の電子部品を同時に接合する際に、個別に電子部品の加圧量および/または平行度を調整する請求項2記載の接合方法。 The joining method according to claim 2, wherein when the plurality of electronic components are joined simultaneously in the second step, the pressure amount and / or parallelism of the electronic components are individually adjusted.
- 第二のステップの熱源が補強板に対して電子部品とは反対側に存在する請求項1から4のいずれか記載の接合方法。 The joining method according to any one of claims 1 to 4, wherein the heat source of the second step exists on the side opposite to the electronic component with respect to the reinforcing plate.
- 補強板が電磁波透過性材料である請求項1から5のいずれか記載の接合方法。 The joining method according to claim 1, wherein the reinforcing plate is an electromagnetic wave transmissive material.
- 補強板が無機ガラスである請求項1から6のいずれか記載の接合方法。 The joining method according to claim 1, wherein the reinforcing plate is inorganic glass.
- 第二のステップの熱源が電磁波発生源である請求項1から7のいずれか記載の接合方法。 The joining method according to claim 1, wherein the heat source of the second step is an electromagnetic wave generation source.
- 電磁波発生源が生じる電磁波が近赤外線である請求項8記載の接合方法。 The joining method according to claim 8, wherein the electromagnetic wave generated by the electromagnetic wave generation source is near infrared rays.
- 第二のステップで、前記可撓性フィルム基板の下方から電子部品接合位置の前記熱硬化性樹脂層を選択的に硬化温度以上に加熱する工程を有する請求項1記載の接合方法。 The bonding method according to claim 1, further comprising a step of selectively heating the thermosetting resin layer at an electronic component bonding position to a curing temperature or higher from below the flexible film substrate in the second step.
- ソルダーレジストが形成された領域と熱硬化型樹脂が形成された領域を複数有する可撓性フィルム基板に電子部品を接合する接合装置であって、
前記可撓性フィルム基板を保持するステージと、
前記ステージで前記可撓性フィルム基板が保持される位置の上方に配置され、前記電子部品を前記可撓性フィルム基板に押しつける加圧手段と、
前記ステージで前記可撓性フィルム基板が保持される位置の下方に配置され、前記熱硬化型樹脂が塗布された領域を選択的に加熱する加熱手段
を有する接合装置。 A joining apparatus for joining an electronic component to a flexible film substrate having a plurality of regions in which a solder resist is formed and a region in which a thermosetting resin is formed,
A stage for holding the flexible film substrate;
A pressure unit that is disposed above a position where the flexible film substrate is held on the stage, and presses the electronic component against the flexible film substrate;
A bonding apparatus including a heating unit that is disposed below a position where the flexible film substrate is held on the stage and selectively heats a region to which the thermosetting resin is applied. - 前記加圧手段は、複数の電子部品を同時に加圧する請求項11に記載された接合装置。 The joining apparatus according to claim 11, wherein the pressurizing unit pressurizes a plurality of electronic components simultaneously.
- 前記加熱手段は、前記ステージで前記可撓性フィルム基板が保持される位置の下方に配置され、
前記熱硬化型樹脂が塗布された領域以外への加熱を遮断する加熱遮断マスクと、
前記加熱遮断マスクの下方に配置された熱源
からなる請求項11記載の接合装置。 The heating means is disposed below a position where the flexible film substrate is held on the stage,
A heat shut-off mask that shuts off heat to areas other than the area where the thermosetting resin is applied;
The bonding apparatus according to claim 11, further comprising a heat source disposed below the heat blocking mask. - 前記加熱手段は、前記ステージの下方に配置され、
前記熱硬化型樹脂が塗布された領域に射出面を有するレーザー光源
からなる請求項11記載の接合装置。 The heating means is disposed below the stage,
The bonding apparatus according to claim 11, comprising a laser light source having an emission surface in a region where the thermosetting resin is applied. - 前記加熱手段は、前記ステージの下方に配置され、
前記熱硬化型樹脂が塗布された領域に射出面を有する導光路と、
前記導光路に光を入射する光源
からなる請求項11記載の接合装置。 The heating means is disposed below the stage,
A light guide having an exit surface in a region where the thermosetting resin is applied;
The joining apparatus according to claim 11, comprising a light source that makes light incident on the light guide path. - 前記複数の電子部品を前記可撓性フィルム基板に押しつける加圧手段は、前記複数の電子部品のそれぞれに対して電子部品の加圧量および/または平行度を調整する加圧手段が複数配置された請求項12に記載された接合装置。 The pressurizing unit that presses the plurality of electronic components against the flexible film substrate includes a plurality of pressurizing units that adjust the pressurization amount and / or parallelism of the electronic components with respect to each of the plurality of electronic components. The joining apparatus according to claim 12.
- ソルダーレジストを塗布された領域と熱硬化型樹脂を塗布された領域を複数有する可撓性フィルム基板に電子部品を接合する接合装置であって、
前記可撓性フィルム基板を保持し、前記熱硬化型樹脂が塗布された領域に対応する場所に突起部を有するステージと、
前記ステージの上方に配置され、前記熱硬化型樹脂を塗布した全ての領域を含む面積を有するクッション材を有する加圧ツールと、
前記突起部を加熱する熱源
を有する請求項11記載の接合装置。
A bonding apparatus for bonding an electronic component to a flexible film substrate having a plurality of regions coated with a solder resist and a region coated with a thermosetting resin,
A stage that holds the flexible film substrate and has a protrusion at a location corresponding to a region where the thermosetting resin is applied;
A pressurizing tool having a cushioning material disposed over the stage and having an area including all areas to which the thermosetting resin is applied;
The bonding apparatus according to claim 11, further comprising a heat source that heats the protrusion.
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Also Published As
Publication number | Publication date |
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CN102204419A (en) | 2011-09-28 |
TW201031297A (en) | 2010-08-16 |
JPWO2010050209A1 (en) | 2012-03-29 |
KR20110076876A (en) | 2011-07-06 |
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