JP2000150472A - プラズマ処理装置 - Google Patents

プラズマ処理装置

Info

Publication number
JP2000150472A
JP2000150472A JP10318675A JP31867598A JP2000150472A JP 2000150472 A JP2000150472 A JP 2000150472A JP 10318675 A JP10318675 A JP 10318675A JP 31867598 A JP31867598 A JP 31867598A JP 2000150472 A JP2000150472 A JP 2000150472A
Authority
JP
Japan
Prior art keywords
plate
substrate
plasma
radicals
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10318675A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000150472A5 (enExample
Inventor
Masato Ikegawa
正人 池川
Ichiro Sasaki
一郎 佐々木
Tsutomu Tetsuka
勉 手束
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10318675A priority Critical patent/JP2000150472A/ja
Publication of JP2000150472A publication Critical patent/JP2000150472A/ja
Publication of JP2000150472A5 publication Critical patent/JP2000150472A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
JP10318675A 1998-11-10 1998-11-10 プラズマ処理装置 Pending JP2000150472A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10318675A JP2000150472A (ja) 1998-11-10 1998-11-10 プラズマ処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10318675A JP2000150472A (ja) 1998-11-10 1998-11-10 プラズマ処理装置

Publications (2)

Publication Number Publication Date
JP2000150472A true JP2000150472A (ja) 2000-05-30
JP2000150472A5 JP2000150472A5 (enExample) 2005-11-10

Family

ID=18101782

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10318675A Pending JP2000150472A (ja) 1998-11-10 1998-11-10 プラズマ処理装置

Country Status (1)

Country Link
JP (1) JP2000150472A (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6427621B1 (en) * 1999-04-14 2002-08-06 Hitachi, Ltd. Plasma processing device and plasma processing method
JP2007208208A (ja) * 2006-02-06 2007-08-16 Tokyo Electron Ltd プラズマ処理装置およびプラズマ処理方法
JP2008166853A (ja) * 2008-03-28 2008-07-17 Hitachi Ltd プラズマエッチング装置
JP2011071497A (ja) * 2009-08-25 2011-04-07 Semiconductor Energy Lab Co Ltd プラズマｃｖｄ装置、微結晶半導体膜の作製方法、及び半導体装置の作製方法
WO2011155408A1 (ja) * 2010-06-07 2011-12-15 三洋電機株式会社 プラズマ処理装置
JP2018022899A (ja) * 2017-09-01 2018-02-08 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US10074545B2 (en) 2014-04-09 2018-09-11 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
CN108885996A (zh) * 2016-04-01 2018-11-23 Tes股份有限公司 氧化硅膜的选择性蚀刻方法

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6427621B1 (en) * 1999-04-14 2002-08-06 Hitachi, Ltd. Plasma processing device and plasma processing method
JP2007208208A (ja) * 2006-02-06 2007-08-16 Tokyo Electron Ltd プラズマ処理装置およびプラズマ処理方法
JP2008166853A (ja) * 2008-03-28 2008-07-17 Hitachi Ltd プラズマエッチング装置
JP2011071497A (ja) * 2009-08-25 2011-04-07 Semiconductor Energy Lab Co Ltd プラズマｃｖｄ装置、微結晶半導体膜の作製方法、及び半導体装置の作製方法
US9177761B2 (en) 2009-08-25 2015-11-03 Semiconductor Energy Laboratory Co., Ltd. Plasma CVD apparatus, method for forming microcrystalline semiconductor film and method for manufacturing semiconductor device
WO2011155408A1 (ja) * 2010-06-07 2011-12-15 三洋電機株式会社 プラズマ処理装置
US10074545B2 (en) 2014-04-09 2018-09-11 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
CN108885996A (zh) * 2016-04-01 2018-11-23 Tes股份有限公司 氧化硅膜的选择性蚀刻方法
CN108885996B (zh) * 2016-04-01 2023-08-08 Tes股份有限公司 氧化硅膜的选择性蚀刻方法
JP2018022899A (ja) * 2017-09-01 2018-02-08 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法

Similar Documents

Publication Publication Date Title
US20040097090A1 (en) Silicon etching method
KR100702723B1 (ko) 드라이 에칭 방법
KR20000006368A (ko) 플라즈마처리장치및플라즈마처리방법
US6893971B2 (en) Dry etching method and apparatus
JP5367689B2 (ja) プラズマ処理方法
US20010051438A1 (en) Process and apparatus for dry-etching a semiconductor layer
US6573190B1 (en) Dry etching device and dry etching method
JP2000150472A (ja) プラズマ処理装置
US20040048487A1 (en) Method and apparatus for etching Si
JP3408994B2 (ja) プラズマ処理装置及びプラズマ処理装置の制御方法
KR20030024386A (ko) 플라즈마 발생장치 및 이를 이용한 ＳｉＯ₂박막 식각방법
TWI812575B (zh) 電漿處理方法
JP5774356B2 (ja) プラズマ処理方法
JPH1167725A (ja) プラズマエッチング装置
EP0512677A2 (en) Plasma treatment method and apparatus
JP4104926B2 (ja) ドライエッチング方法
JP3940467B2 (ja) 反応性イオンエッチング装置及び方法
JP3854019B2 (ja) 半導体装置の製造方法
JP2000077393A (ja) プラズマ処理装置
US20250095981A1 (en) Plasma processing method
JP5171091B2 (ja) プラズマ処理方法
JP4332230B2 (ja) 反応性イオンエッチング方法及び装置
JPH0964017A (ja) 半導体製造装置および半導体装置の製造方法
JP2811880B2 (ja) ドライエッチング方法
JPH0653170A (ja) Ｅｃｒプラズマエッチング装置

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050927

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050927

RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20050927

RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20060417

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20070814

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070821

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20071005

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080129

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20080527