JP2000133563A - 露光方法及び露光装置 - Google Patents

露光方法及び露光装置

Info

Publication number
JP2000133563A
JP2000133563A JP10300523A JP30052398A JP2000133563A JP 2000133563 A JP2000133563 A JP 2000133563A JP 10300523 A JP10300523 A JP 10300523A JP 30052398 A JP30052398 A JP 30052398A JP 2000133563 A JP2000133563 A JP 2000133563A
Authority
JP
Japan
Prior art keywords
exposure
pattern
mask
photosensitive substrate
scanning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP10300523A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000133563A5 (enExample
Inventor
Gen Uchida
玄 内田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to JP10300523A priority Critical patent/JP2000133563A/ja
Publication of JP2000133563A publication Critical patent/JP2000133563A/ja
Publication of JP2000133563A5 publication Critical patent/JP2000133563A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP10300523A 1998-10-22 1998-10-22 露光方法及び露光装置 Withdrawn JP2000133563A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10300523A JP2000133563A (ja) 1998-10-22 1998-10-22 露光方法及び露光装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10300523A JP2000133563A (ja) 1998-10-22 1998-10-22 露光方法及び露光装置

Publications (2)

Publication Number Publication Date
JP2000133563A true JP2000133563A (ja) 2000-05-12
JP2000133563A5 JP2000133563A5 (enExample) 2005-10-27

Family

ID=17885851

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10300523A Withdrawn JP2000133563A (ja) 1998-10-22 1998-10-22 露光方法及び露光装置

Country Status (1)

Country Link
JP (1) JP2000133563A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6600166B2 (en) 2000-07-26 2003-07-29 Kabushiki Kaisha Toshiba Scanning exposure method
JP2007514185A (ja) * 2003-11-12 2007-05-31 イーストマン コダック カンパニー レジスト内でのパーツのサイズ変動
WO2009090928A1 (ja) * 2008-01-17 2009-07-23 Nikon Corporation 露光方法及び装置、並びにデバイス製造方法
JP2012059875A (ja) * 2010-09-08 2012-03-22 Toppan Printing Co Ltd パターン形成方法
CN114820430A (zh) * 2022-02-18 2022-07-29 成都飞机工业（集团）有限责任公司 一种多光源协同曝光的3d打印无损检测方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6600166B2 (en) 2000-07-26 2003-07-29 Kabushiki Kaisha Toshiba Scanning exposure method
JP2007514185A (ja) * 2003-11-12 2007-05-31 イーストマン コダック カンパニー レジスト内でのパーツのサイズ変動
WO2009090928A1 (ja) * 2008-01-17 2009-07-23 Nikon Corporation 露光方法及び装置、並びにデバイス製造方法
TWI463267B (zh) * 2008-01-17 2014-12-01 尼康股份有限公司 曝光方法與裝置以及元件製造方法
JP2012059875A (ja) * 2010-09-08 2012-03-22 Toppan Printing Co Ltd パターン形成方法
CN114820430A (zh) * 2022-02-18 2022-07-29 成都飞机工业（集团）有限责任公司 一种多光源协同曝光的3d打印无损检测方法
CN114820430B (zh) * 2022-02-18 2023-10-03 成都飞机工业（集团）有限责任公司 一种多光源协同曝光的3d打印无损检测方法

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