JP2000114658A - 発光素子及び光検出器のモノリシック集積化構造及びその製造方法 - Google Patents

発光素子及び光検出器のモノリシック集積化構造及びその製造方法

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Publication number
JP2000114658A
JP2000114658A JP11276174A JP27617499A JP2000114658A JP 2000114658 A JP2000114658 A JP 2000114658A JP 11276174 A JP11276174 A JP 11276174A JP 27617499 A JP27617499 A JP 27617499A JP 2000114658 A JP2000114658 A JP 2000114658A
Authority
JP
Japan
Prior art keywords
photodetector
laser
light emitting
junction
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP11276174A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000114658A5 (enExample
Inventor
Dubravko I Babic
ドゥブラフコ・アイ・バビック
Scott W Corzine
スコット・ダブリュ・コルジン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agilent Technologies Inc
Original Assignee
Agilent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agilent Technologies Inc filed Critical Agilent Technologies Inc
Publication of JP2000114658A publication Critical patent/JP2000114658A/ja
Publication of JP2000114658A5 publication Critical patent/JP2000114658A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0427—Electrical excitation ; Circuits therefor for applying modulation to the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/928—Active solid-state devices, e.g. transistors, solid-state diodes with shorted PN or schottky junction other than emitter junction

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP11276174A 1998-10-06 1999-09-29 発光素子及び光検出器のモノリシック集積化構造及びその製造方法 Withdrawn JP2000114658A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US167,961 1998-10-06
US09/167,961 US6222202B1 (en) 1998-10-06 1998-10-06 System and method for the monolithic integration of a light emitting device and a photodetector for low bias voltage operation

Publications (2)

Publication Number Publication Date
JP2000114658A true JP2000114658A (ja) 2000-04-21
JP2000114658A5 JP2000114658A5 (enExample) 2006-11-24

Family

ID=22609536

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11276174A Withdrawn JP2000114658A (ja) 1998-10-06 1999-09-29 発光素子及び光検出器のモノリシック集積化構造及びその製造方法

Country Status (4)

Country Link
US (2) US6222202B1 (enExample)
EP (1) EP0993087B1 (enExample)
JP (1) JP2000114658A (enExample)
DE (1) DE69927764T2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006173328A (ja) * 2004-12-15 2006-06-29 Seiko Epson Corp 光素子、光モジュール、および、光伝送装置
KR101001185B1 (ko) 2008-09-25 2010-12-15 전자부품연구원 수발광 일체형 소자

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US6980575B1 (en) * 2001-03-08 2005-12-27 Cypress Semiconductor Corp. Topology on VCSEL driver
US6847054B1 (en) * 2002-02-07 2005-01-25 Finisar Corporation Optical transistor and method thereof
US7831152B2 (en) * 2002-06-04 2010-11-09 Finisar Corporation Optical transceiver
US7505688B2 (en) * 2002-06-04 2009-03-17 Finisar Corporation Optical transceiver
JP4058633B2 (ja) * 2003-07-10 2008-03-12 セイコーエプソン株式会社 面発光型発光素子、光モジュール、光伝達装置
JP4092570B2 (ja) * 2003-07-23 2008-05-28 セイコーエプソン株式会社 光素子およびその製造方法、光モジュール、ならびに光モジュールの駆動方法
US20050023440A1 (en) * 2003-07-30 2005-02-03 Matthews James Albert Integrated optical detector and diffractive optical element
US7128472B2 (en) * 2003-07-31 2006-10-31 International Business Machines Corporation Method and apparatus for providing optoelectronic communication with an electronic device
US7058247B2 (en) * 2003-12-17 2006-06-06 International Business Machines Corporation Silicon carrier for optical interconnect modules
JP3729270B2 (ja) 2004-01-08 2005-12-21 セイコーエプソン株式会社 光素子およびその製造方法
US7801199B2 (en) * 2004-06-25 2010-09-21 Finisar Corporation Vertical cavity surface emitting laser with photodiode having reduced spontaneous emissions
US7746911B2 (en) * 2004-06-25 2010-06-29 Finisar Corporation Geometric optimizations for reducing spontaneous emissions in photodiodes
KR100810209B1 (ko) * 2005-12-29 2008-03-07 삼성전자주식회사 반이중 통신방식의 광연결 구조 및 이에 적합한 광소자
WO2007084045A1 (en) * 2006-01-17 2007-07-26 Telefonaktiebolaget Lm Ericsson (Publ) Method and arrangement for reducing power consumption in a mobile communication network
US7659776B2 (en) * 2006-10-17 2010-02-09 Cypress Semiconductor Corporation Offset voltage correction for high gain amplifier
KR101542729B1 (ko) 2007-12-11 2015-08-07 코닌클리케 필립스 엔.브이. 광 트랜지스터를 포함하는 반도체 레이저
EP2277245B1 (en) * 2008-05-09 2016-07-13 Philips Intellectual Property & Standards GmbH Vertical cavity surface emitting laser device with monolithically integrated photodiode
KR101623960B1 (ko) * 2009-06-04 2016-05-25 삼성전자주식회사 광전자 셔터, 이의 동작 방법 및 광전자 셔터를 채용한 광학 장치
US20110049468A1 (en) * 2009-08-25 2011-03-03 Panasonic Corporation Led and led display and illumination devices
US8502452B2 (en) 2010-07-28 2013-08-06 Usl Technologies, Llc High-stability light source system and method of manufacturing
US9572218B2 (en) 2013-11-19 2017-02-14 Usl Technologies, Llc High-stability light source system and method
US10276816B2 (en) 2014-12-11 2019-04-30 International Business Machines Corporation Illumination sensitive current control device
EP3514898A1 (en) 2018-01-19 2019-07-24 Koninklijke Philips N.V. Vertical cavity surface emitting laser device with integrated photodiode
WO2021140618A1 (ja) * 2020-01-09 2021-07-15 三菱電機株式会社 半導体レーザ装置の検査方法、および半導体レーザ装置の検査装置

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US5136603A (en) 1991-04-29 1992-08-04 At&T Bell Laboratories Self-monitoring semiconductor laser device
US5212706A (en) 1991-12-03 1993-05-18 University Of Connecticut Laser diode assembly with tunnel junctions and providing multiple beams
WO1993022839A1 (en) 1992-05-05 1993-11-11 American Telephone & Telegraph Company Active optical logic device incorporating a surface-emitting laser
JPH0637300A (ja) 1992-07-15 1994-02-10 Nippon Telegr & Teleph Corp <Ntt> 光集積回路
US5606572A (en) 1994-03-24 1997-02-25 Vixel Corporation Integration of laser with photodiode for feedback control
JP3882210B2 (ja) * 1995-09-13 2007-02-14 ソニー株式会社 光学装置
US5663944A (en) 1995-12-29 1997-09-02 Samsung Electronics Co., Ltd. Vertical cavity laser light beam monitored by reflection of a half mirror, with application in optical pick-up
US5648979A (en) 1995-12-29 1997-07-15 Samsung Electronics Co. Ltd. Assembly of VCSEL light source and VCSEL optical detector
US5757837A (en) 1996-10-16 1998-05-26 The Regents Of The University Of California Intracavity quantum well photodetector integrated within a vertical-cavity surface-emitting laser and method of operating same
KR100234340B1 (ko) 1996-10-29 1999-12-15 윤종용 광출력장치
US5892786A (en) 1997-03-26 1999-04-06 The United States Of America As Represented By The Secretary Of The Air Force Output control of vertical microcavity light emitting device
US6097748A (en) * 1998-05-18 2000-08-01 Motorola, Inc. Vertical cavity surface emitting laser semiconductor chip with integrated drivers and photodetectors and method of fabrication

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006173328A (ja) * 2004-12-15 2006-06-29 Seiko Epson Corp 光素子、光モジュール、および、光伝送装置
US7197203B2 (en) 2004-12-15 2007-03-27 Seiko Epson Corporation Optical element, optical module, and optical transmission device
KR101001185B1 (ko) 2008-09-25 2010-12-15 전자부품연구원 수발광 일체형 소자

Also Published As

Publication number Publication date
US6236671B1 (en) 2001-05-22
DE69927764T2 (de) 2006-07-20
DE69927764D1 (de) 2006-03-02
EP0993087A1 (en) 2000-04-12
EP0993087B1 (en) 2005-10-19
US6222202B1 (en) 2001-04-24

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