DE69927764T2 - System und Verfahren zur monolithischen Integration einer lichtaussendenden Vorrichtung und eines Photodetektors für einen Betrieb mit einer niedrigen Vorspannung - Google Patents
System und Verfahren zur monolithischen Integration einer lichtaussendenden Vorrichtung und eines Photodetektors für einen Betrieb mit einer niedrigen Vorspannung Download PDFInfo
- Publication number
- DE69927764T2 DE69927764T2 DE69927764T DE69927764T DE69927764T2 DE 69927764 T2 DE69927764 T2 DE 69927764T2 DE 69927764 T DE69927764 T DE 69927764T DE 69927764 T DE69927764 T DE 69927764T DE 69927764 T2 DE69927764 T2 DE 69927764T2
- Authority
- DE
- Germany
- Prior art keywords
- photodetector
- laser
- type
- junction
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 29
- 230000007704 transition Effects 0.000 claims description 8
- 239000010410 layer Substances 0.000 description 81
- 239000000463 material Substances 0.000 description 37
- 230000003071 parasitic effect Effects 0.000 description 20
- 230000010354 integration Effects 0.000 description 11
- 239000000758 substrate Substances 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000002745 absorbent Effects 0.000 description 4
- 239000002250 absorbent Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000002269 spontaneous effect Effects 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000002730 additional effect Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
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- 238000012545 processing Methods 0.000 description 1
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- 230000029305 taxis Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
- H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0427—Electrical excitation ; Circuits therefor for applying modulation to the laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/928—Active solid-state devices, e.g. transistors, solid-state diodes with shorted PN or schottky junction other than emitter junction
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US167961 | 1998-10-06 | ||
| US09/167,961 US6222202B1 (en) | 1998-10-06 | 1998-10-06 | System and method for the monolithic integration of a light emitting device and a photodetector for low bias voltage operation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69927764D1 DE69927764D1 (de) | 2006-03-02 |
| DE69927764T2 true DE69927764T2 (de) | 2006-07-20 |
Family
ID=22609536
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69927764T Expired - Fee Related DE69927764T2 (de) | 1998-10-06 | 1999-07-14 | System und Verfahren zur monolithischen Integration einer lichtaussendenden Vorrichtung und eines Photodetektors für einen Betrieb mit einer niedrigen Vorspannung |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US6222202B1 (enExample) |
| EP (1) | EP0993087B1 (enExample) |
| JP (1) | JP2000114658A (enExample) |
| DE (1) | DE69927764T2 (enExample) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6980575B1 (en) * | 2001-03-08 | 2005-12-27 | Cypress Semiconductor Corp. | Topology on VCSEL driver |
| US6847054B1 (en) * | 2002-02-07 | 2005-01-25 | Finisar Corporation | Optical transistor and method thereof |
| US7831152B2 (en) * | 2002-06-04 | 2010-11-09 | Finisar Corporation | Optical transceiver |
| US7505688B2 (en) * | 2002-06-04 | 2009-03-17 | Finisar Corporation | Optical transceiver |
| JP4058633B2 (ja) * | 2003-07-10 | 2008-03-12 | セイコーエプソン株式会社 | 面発光型発光素子、光モジュール、光伝達装置 |
| JP4092570B2 (ja) * | 2003-07-23 | 2008-05-28 | セイコーエプソン株式会社 | 光素子およびその製造方法、光モジュール、ならびに光モジュールの駆動方法 |
| US20050023440A1 (en) * | 2003-07-30 | 2005-02-03 | Matthews James Albert | Integrated optical detector and diffractive optical element |
| US7128472B2 (en) * | 2003-07-31 | 2006-10-31 | International Business Machines Corporation | Method and apparatus for providing optoelectronic communication with an electronic device |
| US7058247B2 (en) * | 2003-12-17 | 2006-06-06 | International Business Machines Corporation | Silicon carrier for optical interconnect modules |
| JP3729270B2 (ja) | 2004-01-08 | 2005-12-21 | セイコーエプソン株式会社 | 光素子およびその製造方法 |
| US7801199B2 (en) * | 2004-06-25 | 2010-09-21 | Finisar Corporation | Vertical cavity surface emitting laser with photodiode having reduced spontaneous emissions |
| US7746911B2 (en) * | 2004-06-25 | 2010-06-29 | Finisar Corporation | Geometric optimizations for reducing spontaneous emissions in photodiodes |
| JP4386191B2 (ja) * | 2004-12-15 | 2009-12-16 | セイコーエプソン株式会社 | 光素子 |
| KR100810209B1 (ko) * | 2005-12-29 | 2008-03-07 | 삼성전자주식회사 | 반이중 통신방식의 광연결 구조 및 이에 적합한 광소자 |
| WO2007084045A1 (en) * | 2006-01-17 | 2007-07-26 | Telefonaktiebolaget Lm Ericsson (Publ) | Method and arrangement for reducing power consumption in a mobile communication network |
| US7659776B2 (en) * | 2006-10-17 | 2010-02-09 | Cypress Semiconductor Corporation | Offset voltage correction for high gain amplifier |
| KR101542729B1 (ko) | 2007-12-11 | 2015-08-07 | 코닌클리케 필립스 엔.브이. | 광 트랜지스터를 포함하는 반도체 레이저 |
| EP2277245B1 (en) * | 2008-05-09 | 2016-07-13 | Philips Intellectual Property & Standards GmbH | Vertical cavity surface emitting laser device with monolithically integrated photodiode |
| KR101001185B1 (ko) | 2008-09-25 | 2010-12-15 | 전자부품연구원 | 수발광 일체형 소자 |
| KR101623960B1 (ko) * | 2009-06-04 | 2016-05-25 | 삼성전자주식회사 | 광전자 셔터, 이의 동작 방법 및 광전자 셔터를 채용한 광학 장치 |
| US20110049468A1 (en) * | 2009-08-25 | 2011-03-03 | Panasonic Corporation | Led and led display and illumination devices |
| US8502452B2 (en) | 2010-07-28 | 2013-08-06 | Usl Technologies, Llc | High-stability light source system and method of manufacturing |
| US9572218B2 (en) | 2013-11-19 | 2017-02-14 | Usl Technologies, Llc | High-stability light source system and method |
| US10276816B2 (en) | 2014-12-11 | 2019-04-30 | International Business Machines Corporation | Illumination sensitive current control device |
| EP3514898A1 (en) | 2018-01-19 | 2019-07-24 | Koninklijke Philips N.V. | Vertical cavity surface emitting laser device with integrated photodiode |
| WO2021140618A1 (ja) * | 2020-01-09 | 2021-07-15 | 三菱電機株式会社 | 半導体レーザ装置の検査方法、および半導体レーザ装置の検査装置 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5136603A (en) | 1991-04-29 | 1992-08-04 | At&T Bell Laboratories | Self-monitoring semiconductor laser device |
| US5212706A (en) | 1991-12-03 | 1993-05-18 | University Of Connecticut | Laser diode assembly with tunnel junctions and providing multiple beams |
| WO1993022839A1 (en) | 1992-05-05 | 1993-11-11 | American Telephone & Telegraph Company | Active optical logic device incorporating a surface-emitting laser |
| JPH0637300A (ja) | 1992-07-15 | 1994-02-10 | Nippon Telegr & Teleph Corp <Ntt> | 光集積回路 |
| US5606572A (en) | 1994-03-24 | 1997-02-25 | Vixel Corporation | Integration of laser with photodiode for feedback control |
| JP3882210B2 (ja) * | 1995-09-13 | 2007-02-14 | ソニー株式会社 | 光学装置 |
| US5663944A (en) | 1995-12-29 | 1997-09-02 | Samsung Electronics Co., Ltd. | Vertical cavity laser light beam monitored by reflection of a half mirror, with application in optical pick-up |
| US5648979A (en) | 1995-12-29 | 1997-07-15 | Samsung Electronics Co. Ltd. | Assembly of VCSEL light source and VCSEL optical detector |
| US5757837A (en) | 1996-10-16 | 1998-05-26 | The Regents Of The University Of California | Intracavity quantum well photodetector integrated within a vertical-cavity surface-emitting laser and method of operating same |
| KR100234340B1 (ko) | 1996-10-29 | 1999-12-15 | 윤종용 | 광출력장치 |
| US5892786A (en) | 1997-03-26 | 1999-04-06 | The United States Of America As Represented By The Secretary Of The Air Force | Output control of vertical microcavity light emitting device |
| US6097748A (en) * | 1998-05-18 | 2000-08-01 | Motorola, Inc. | Vertical cavity surface emitting laser semiconductor chip with integrated drivers and photodetectors and method of fabrication |
-
1998
- 1998-10-06 US US09/167,961 patent/US6222202B1/en not_active Expired - Lifetime
- 1998-10-29 US US09/183,030 patent/US6236671B1/en not_active Expired - Fee Related
-
1999
- 1999-07-14 DE DE69927764T patent/DE69927764T2/de not_active Expired - Fee Related
- 1999-07-14 EP EP99113806A patent/EP0993087B1/en not_active Expired - Lifetime
- 1999-09-29 JP JP11276174A patent/JP2000114658A/ja not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| US6236671B1 (en) | 2001-05-22 |
| DE69927764D1 (de) | 2006-03-02 |
| EP0993087A1 (en) | 2000-04-12 |
| JP2000114658A (ja) | 2000-04-21 |
| EP0993087B1 (en) | 2005-10-19 |
| US6222202B1 (en) | 2001-04-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8327 | Change in the person/name/address of the patent owner |
Owner name: AVAGO TECHNOLOGIES FIBER IP (SINGAPORE) PTE. LTD., |
|
| 8364 | No opposition during term of opposition | ||
| 8328 | Change in the person/name/address of the agent |
Representative=s name: SCHOPPE, ZIMMERMANN, STOECKELER & ZINKLER, 82049 PU |
|
| 8328 | Change in the person/name/address of the agent |
Representative=s name: DILG HAEUSLER SCHINDELMANN PATENTANWALTSGESELLSCHA |
|
| 8339 | Ceased/non-payment of the annual fee |