JP2000114566A5 - - Google Patents
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- Publication number
- JP2000114566A5 JP2000114566A5 JP1998286457A JP28645798A JP2000114566A5 JP 2000114566 A5 JP2000114566 A5 JP 2000114566A5 JP 1998286457 A JP1998286457 A JP 1998286457A JP 28645798 A JP28645798 A JP 28645798A JP 2000114566 A5 JP2000114566 A5 JP 2000114566A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor film
- photoelectric conversion
- close contact
- conversion device
- unit cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 description 38
- 238000006243 chemical reaction Methods 0.000 description 26
- 239000000758 substrate Substances 0.000 description 10
- 239000002184 metal Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000004760 aramid Substances 0.000 description 1
- 229920003235 aromatic polyamide Polymers 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- LQJIDIOGYJAQMF-UHFFFAOYSA-N lambda2-silanylidenetin Chemical compound [Si].[Sn] LQJIDIOGYJAQMF-UHFFFAOYSA-N 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28645798A JP4282797B2 (ja) | 1998-10-08 | 1998-10-08 | 光電変換装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28645798A JP4282797B2 (ja) | 1998-10-08 | 1998-10-08 | 光電変換装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000114566A JP2000114566A (ja) | 2000-04-21 |
| JP2000114566A5 true JP2000114566A5 (enExample) | 2005-11-24 |
| JP4282797B2 JP4282797B2 (ja) | 2009-06-24 |
Family
ID=17704646
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28645798A Expired - Fee Related JP4282797B2 (ja) | 1998-10-08 | 1998-10-08 | 光電変換装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4282797B2 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002176162A (ja) * | 2000-08-10 | 2002-06-21 | Semiconductor Energy Lab Co Ltd | エリアセンサ及びエリアセンサを備えた表示装置 |
| US7030551B2 (en) | 2000-08-10 | 2006-04-18 | Semiconductor Energy Laboratory Co., Ltd. | Area sensor and display apparatus provided with an area sensor |
| JP5377061B2 (ja) * | 2008-05-09 | 2013-12-25 | 株式会社半導体エネルギー研究所 | 光電変換装置 |
| JP2012077321A (ja) | 2010-09-30 | 2012-04-19 | Sumitomo Heavy Ind Ltd | 成膜基板の製造方法、成膜基板、および成膜装置 |
-
1998
- 1998-10-08 JP JP28645798A patent/JP4282797B2/ja not_active Expired - Fee Related
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