JP2000114479A - 導電性膜の形成方法およびそれを用いたキャパシタの形成方法 - Google Patents

導電性膜の形成方法およびそれを用いたキャパシタの形成方法

Info

Publication number
JP2000114479A
JP2000114479A JP10280134A JP28013498A JP2000114479A JP 2000114479 A JP2000114479 A JP 2000114479A JP 10280134 A JP10280134 A JP 10280134A JP 28013498 A JP28013498 A JP 28013498A JP 2000114479 A JP2000114479 A JP 2000114479A
Authority
JP
Japan
Prior art keywords
film
thd
capacitor
raw material
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP10280134A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000114479A5 (enExample
Inventor
Kazuhiro Eguchi
和弘 江口
Tomonori Aoyama
知憲 青山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP10280134A priority Critical patent/JP2000114479A/ja
Priority to US09/408,837 priority patent/US6297122B1/en
Publication of JP2000114479A publication Critical patent/JP2000114479A/ja
Publication of JP2000114479A5 publication Critical patent/JP2000114479A5/ja
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/696—Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
JP10280134A 1998-10-01 1998-10-01 導電性膜の形成方法およびそれを用いたキャパシタの形成方法 Abandoned JP2000114479A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP10280134A JP2000114479A (ja) 1998-10-01 1998-10-01 導電性膜の形成方法およびそれを用いたキャパシタの形成方法
US09/408,837 US6297122B1 (en) 1998-10-01 1999-09-30 Method of forming conductive film and capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10280134A JP2000114479A (ja) 1998-10-01 1998-10-01 導電性膜の形成方法およびそれを用いたキャパシタの形成方法

Publications (2)

Publication Number Publication Date
JP2000114479A true JP2000114479A (ja) 2000-04-21
JP2000114479A5 JP2000114479A5 (enExample) 2004-10-07

Family

ID=17620822

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10280134A Abandoned JP2000114479A (ja) 1998-10-01 1998-10-01 導電性膜の形成方法およびそれを用いたキャパシタの形成方法

Country Status (2)

Country Link
US (1) US6297122B1 (enExample)
JP (1) JP2000114479A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100443350B1 (ko) * 2001-12-29 2004-08-09 주식회사 하이닉스반도체 스트론튬루테늄산화물의 단원자층 증착 방법
JP2005026455A (ja) * 2003-07-02 2005-01-27 Tokyo Electron Ltd 処理方法及び処理装置

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6700145B1 (en) * 1998-04-30 2004-03-02 International Business Machines Corporation Capacitor with high charge storage capacity
JP2002231656A (ja) * 2001-01-31 2002-08-16 Hitachi Ltd 半導体集積回路装置の製造方法
KR100414872B1 (ko) * 2001-08-29 2004-01-13 주식회사 하이닉스반도체 반도체소자 및 그 제조 방법
CN1610117A (zh) * 2003-10-17 2005-04-27 松下电器产业株式会社 半导体装置及其制造方法
WO2011002046A1 (en) 2009-06-30 2011-01-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101805335B1 (ko) 2009-06-30 2017-12-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 표시 장치, 및 전자 장비
KR101995704B1 (ko) 2009-11-20 2019-07-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
KR102732713B1 (ko) * 2020-04-17 2024-11-21 에스케이온 주식회사 이차전지 전극 극판 과건조 불량 개선을 위한 플렉시블 급기 댐퍼링 시스템

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5392189A (en) * 1993-04-02 1995-02-21 Micron Semiconductor, Inc. Capacitor compatible with high dielectric constant materials having two independent insulative layers and the method for forming same
JP3152859B2 (ja) 1994-09-16 2001-04-03 株式会社東芝 半導体装置の製造方法
US5629229A (en) 1995-07-12 1997-05-13 Sharp Kabushiki Kaisha Metalorganic chemical vapor deposition of (Ba1-x Srx)RuO3 /(Ba1-x Srx)TIO3 /(Ba1-x Srx)TiO3 /(Ba1- Srx)RuO3 capacitors for high dielectric materials
JP3466851B2 (ja) * 1997-01-20 2003-11-17 株式会社東芝 半導体装置及びその製造方法
US6075264A (en) * 1999-01-25 2000-06-13 Samsung Electronics Co., Ltd. Structure of a ferroelectric memory cell and method of fabricating it

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100443350B1 (ko) * 2001-12-29 2004-08-09 주식회사 하이닉스반도체 스트론튬루테늄산화물의 단원자층 증착 방법
JP2005026455A (ja) * 2003-07-02 2005-01-27 Tokyo Electron Ltd 処理方法及び処理装置

Also Published As

Publication number Publication date
US6297122B1 (en) 2001-10-02

Similar Documents

Publication Publication Date Title
JP3152859B2 (ja) 半導体装置の製造方法
US5989635A (en) High dielectric constant thin film structure, method for forming high dielectric constant thin film and apparatus for forming high dielectric constant thin film
US6300212B1 (en) Method of fabricating semiconductor device having memory capacitor including ferroelectric layer made of composite metal oxide
US5686151A (en) Method of forming a metal oxide film
US20050019960A1 (en) Method and apparatus for forming a ferroelectric layer
US7605007B2 (en) Semiconductor device and method of manufacturing the same
JP2002231656A (ja) 半導体集積回路装置の製造方法
US5343353A (en) Semiconductor device and process of producing the same
JP3109485B2 (ja) 金属酸化物誘電体膜の気相成長方法
US7291530B2 (en) Semiconductor storage device and method of manufacturing the same
JP2000114479A (ja) 導電性膜の形成方法およびそれを用いたキャパシタの形成方法
US20040195653A1 (en) Capacitor structure and film forming method and apparatus
KR100433465B1 (ko) 금속산화물유전체막의 기상성장방법 및 금속산화물유전체재료의 기상성장을 위한 장치
JP2001127258A (ja) 半導体装置およびその製造方法
US20040058492A1 (en) Vapor growth method for metal oxide dielectric film and pzt film
US5882410A (en) High dielectric constant thin film structure, method for forming high dielectric constant thin film, and apparatus for forming high dielectric constant thin film
JP3598068B2 (ja) 半導体装置の製造方法
JP3130757B2 (ja) キャパシタ電極用薄膜の形成方法、半導体装置及びその製造方法
JP2002334875A (ja) 金属酸化物誘電体膜の気相成長方法
JP3171246B2 (ja) 金属酸化物誘電体膜の気相成長方法
JPH0786270A (ja) 金属酸化膜の形成方法
JPH09241849A (ja) 酸化物薄膜の製造装置及びその製造方法
JP3353835B2 (ja) 金属酸化物誘電体膜の気相成長方法
JP2000091333A (ja) 高誘電体膜の形成方法及び半導体装置の製造方法
JPH07273216A (ja) 金属酸化膜の形成方法

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20040513

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20040608

A762 Written abandonment of application

Free format text: JAPANESE INTERMEDIATE CODE: A762

Effective date: 20040816