JP2000091846A5 - - Google Patents

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Publication number
JP2000091846A5
JP2000091846A5 JP1998259005A JP25900598A JP2000091846A5 JP 2000091846 A5 JP2000091846 A5 JP 2000091846A5 JP 1998259005 A JP1998259005 A JP 1998259005A JP 25900598 A JP25900598 A JP 25900598A JP 2000091846 A5 JP2000091846 A5 JP 2000091846A5
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JP
Japan
Prior art keywords
atoms
gallium arsenide
line
ground electrode
signal line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP1998259005A
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English (en)
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JP2000091846A (ja
JP3899193B2 (ja
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Publication date
Application filed filed Critical
Priority claimed from JP25900598A external-priority patent/JP3899193B2/ja
Priority to JP25900598A priority Critical patent/JP3899193B2/ja
Priority to US09/299,017 priority patent/US6344658B1/en
Priority to EP99108231A priority patent/EP0954039B1/en
Priority to KR10-1999-0014953A priority patent/KR100523131B1/ko
Priority to EP03025203.5A priority patent/EP1388901B1/en
Priority to DE69934933T priority patent/DE69934933T2/de
Priority to EP03025204.3A priority patent/EP1388931B1/en
Priority to EP03025205.0A priority patent/EP1388902B1/en
Priority to CNB2004100016222A priority patent/CN1278398C/zh
Priority to CNB991053869A priority patent/CN100364111C/zh
Priority to US09/540,040 priority patent/US6369663B1/en
Priority to US09/541,097 priority patent/US6514832B1/en
Priority to US09/540,041 priority patent/US6426511B1/en
Publication of JP2000091846A publication Critical patent/JP2000091846A/ja
Publication of JP2000091846A5 publication Critical patent/JP2000091846A5/ja
Priority to KR10-2005-0045357A priority patent/KR100503694B1/ko
Priority to KR1020050045356A priority patent/KR20050061415A/ko
Publication of JP3899193B2 publication Critical patent/JP3899193B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【００１７】
線路基板１０は、図２の(a),(b)に示すように、半絶縁性又は絶縁性（例えば、比抵抗が106Ωcm程度以上で、熱伝導率が140W/mK程度以上のＡｌＮ、ＳｉＣ、ダイアモンド等）の平板基板１１の上面に、信号線路１２、その信号線路１２に直流バイアスを印加するチョーク部１３、その信号線路１２の端部に連続させた信号電極１４、その信号電極１４を挟むように配置した一対の表面接地電極１５が形成され、裏面には接地電極１６が形成され、表面接地電極１５は接地電極１６に対してヴィアホール１７により接続されている。この線路基板１０は、その信号線路１２の裏面に接地電極がなく、サスペンディド線路を形成している。
【００１９】
一例として、半導体基板２１は不純物濃度が１〜２×1018atom/cm 3 のｎ型ガリウム砒素からなり、第１のコンタクト層２２は不純物濃度が２×1018atom/cm 3 で厚さ1.5μmのｎ型ガリウム砒素からなり、活性層２３は不純物濃度が1.2×1016atom/cm 3 で厚さ1.6μmのｎ型ガリウム砒素からなり、第２のコンタクト層２４は不純物濃度が１×1018atom/cm 3 で厚さ0.3μmのｎ型ガリウム砒素からなる。ガリウム砒素に代えてインジウムリン等の他の化合物半導体を使用することもできる。
JP25900598A 1998-04-28 1998-09-11 Ｎｒｄガイドガン発振器 Expired - Lifetime JP3899193B2 (ja)

Priority Applications (15)

Application Number Priority Date Filing Date Title
JP25900598A JP3899193B2 (ja) 1998-09-11 1998-09-11 Ｎｒｄガイドガン発振器
US09/299,017 US6344658B1 (en) 1998-04-28 1999-04-26 Gunn diode, NRD guide gunn oscillator, fabricating method of gunn diode and structure for assembly of the same
EP99108231A EP0954039B1 (en) 1998-04-28 1999-04-27 Gunn diode, NRD guide gunn oscillator and fabricating method
KR10-1999-0014953A KR100523131B1 (ko) 1998-04-28 1999-04-27 건 다이오드, 엔알디 가이드 건 발진기와 그 제조방법 및 실장구조
EP03025203.5A EP1388901B1 (en) 1998-04-28 1999-04-27 Structure for assembly of a Gunn diode
DE69934933T DE69934933T2 (de) 1998-04-28 1999-04-27 Gunndiode, NRD Leitungsschaltung und Verfahren zur Herstellung
EP03025204.3A EP1388931B1 (en) 1998-04-28 1999-04-27 NRD guide Gunn oscillator
EP03025205.0A EP1388902B1 (en) 1998-04-28 1999-04-27 Fabricating method of Gunn diode
CNB2004100016222A CN1278398C (zh) 1998-04-28 1999-04-28 耿氏二极管制造方法以及耿氏振荡器
CNB991053869A CN100364111C (zh) 1998-04-28 1999-04-28 耿氏二极管及其安装结构
US09/540,040 US6369663B1 (en) 1998-04-28 2000-03-31 NRD guide Gunn oscillator
US09/541,097 US6514832B1 (en) 1998-04-28 2000-03-31 Gunn diode, NRD guide Gunn oscillator, fabricating method of Gunn diode and structure for assembly of the same
US09/540,041 US6426511B1 (en) 1998-04-28 2000-03-31 Gunn diode, NRD guide gunn oscillator, fabricating method of gunn diode and structure for assembly of the same
KR10-2005-0045357A KR100503694B1 (ko) 1998-04-28 2005-05-30 건 다이오드, 엔알디 가이드 건 발진기와 그 제조방법 및실장구조
KR1020050045356A KR20050061415A (ko) 1998-04-28 2005-05-30 건 다이오드, 엔알디 가이드 건 발진기와 그 제조방법 및실장구조

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25900598A JP3899193B2 (ja) 1998-09-11 1998-09-11 Ｎｒｄガイドガン発振器

Publications (3)

Publication Number Publication Date
JP2000091846A JP2000091846A (ja) 2000-03-31
JP2000091846A5 true JP2000091846A5 (ja) 2004-10-14
JP3899193B2 JP3899193B2 (ja) 2007-03-28

Family

ID=17328039

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25900598A Expired - Lifetime JP3899193B2 (ja) 1998-04-28 1998-09-11 Ｎｒｄガイドガン発振器

Country Status (1)

Country Link
JP (1) JP3899193B2 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4493773B2 (ja) * 1999-12-27 2010-06-30 新日本無線株式会社 ガンダイオード及びその製造方法

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