JP2000081512A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2000081512A5 JP2000081512A5 JP1998252269A JP25226998A JP2000081512A5 JP 2000081512 A5 JP2000081512 A5 JP 2000081512A5 JP 1998252269 A JP1998252269 A JP 1998252269A JP 25226998 A JP25226998 A JP 25226998A JP 2000081512 A5 JP2000081512 A5 JP 2000081512A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- main surface
- optical element
- etching
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 description 43
- 230000003287 optical Effects 0.000 description 13
- 229910052904 quartz Inorganic materials 0.000 description 13
- 239000010453 quartz Substances 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 238000005530 etching Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000010408 film Substances 0.000 description 5
- BJQHLKABXJIVAM-UHFFFAOYSA-N Bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000005498 polishing Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25226998A JP4244410B2 (ja) | 1998-09-07 | 1998-09-07 | エタロンフィルタおよびその製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25226998A JP4244410B2 (ja) | 1998-09-07 | 1998-09-07 | エタロンフィルタおよびその製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2000081512A JP2000081512A (ja) | 2000-03-21 |
JP2000081512A5 true JP2000081512A5 (de) | 2007-11-15 |
JP4244410B2 JP4244410B2 (ja) | 2009-03-25 |
Family
ID=17234897
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP25226998A Expired - Fee Related JP4244410B2 (ja) | 1998-09-07 | 1998-09-07 | エタロンフィルタおよびその製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4244410B2 (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102006032047A1 (de) * | 2006-07-10 | 2008-01-24 | Schott Ag | Verfahren zur Herstellung optoelektronischer Bauelemente und damit hergestellte Erzeugnisse |
JP5707107B2 (ja) | 2010-11-22 | 2015-04-22 | 浜松ホトニクス株式会社 | 分光センサ |
JP5634836B2 (ja) * | 2010-11-22 | 2014-12-03 | 浜松ホトニクス株式会社 | 分光センサの製造方法 |
JP5757835B2 (ja) | 2011-10-04 | 2015-08-05 | 浜松ホトニクス株式会社 | 分光センサの製造方法 |
-
1998
- 1998-09-07 JP JP25226998A patent/JP4244410B2/ja not_active Expired - Fee Related
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP1815509A2 (de) | Halbleiter-wafer-verdünnung | |
EP0094716A1 (de) | Verfahren zur Verbindung eines Halbleiters mit Elementen eines Trägers, insbesondere einer tragbaren Karte | |
CA2192630A1 (en) | Fabrication process and fabrication apparatus of soi substrate | |
KR970067609A (ko) | 결합 웨이퍼 제조 방법 및 이 방법에 의해 제조된 결합 웨이퍼 | |
CA2500309A1 (en) | High precision mirror, and a method of making it | |
EP0867919A3 (de) | Halbleitersubstrat und Verfahren dessen Herstellung | |
JP4416108B2 (ja) | 半導体ウェーハの製造方法 | |
EP0955670A3 (de) | Verfahren zur Herstellung eines Oxidfilms auf einer SOI-Schicht und Verfahren zur Herstellung eines gebondeten Wafers | |
JP2000081512A5 (de) | ||
JPH0273390A (ja) | 柔軟性薄膜ホログラムおよびその製造方法 | |
TWI274645B (en) | Method for cutting thin film filter work pieces | |
JP3520839B2 (ja) | 圧電振動片の製造方法 | |
EP0305267B1 (de) | Herstellungsverfahren der Gesamtheit von elektrisch leitenden Mustern auf einer Fläche aus isolierendem Material von komplexer Form | |
JPS6354740A (ja) | 集積回路基板の製造方法 | |
US6972049B2 (en) | Method for fabricating a diamond film having low surface roughness | |
JPS61158145A (ja) | 半導体基板の加工方法 | |
FR2762115A1 (fr) | Procede d'insertion d'un module electronique dans un corps de carte a memoire electronique | |
EP3497711A1 (de) | Verfahren zur herstellung einer epitaktischen schicht auf einer anzuchtplatte | |
JPH08274286A (ja) | Soi基板の製造方法 | |
EP1133684A1 (de) | Mikromechanische struktur mit einer deformierbaren membran und verfahren zu ihrer herstellung | |
JP4244410B2 (ja) | エタロンフィルタおよびその製造方法 | |
JP2863980B2 (ja) | ウエハの製作方法 | |
WO1987003684A1 (fr) | Procede pour fabriquer et appliquer des jauges de contrainte, et jauges de contrainte obtenues notamment au cours de ce procede | |
JPS6314449A (ja) | 誘電体分離基板の製造方法 | |
EP0919328A3 (de) | Verfahren zum Erzeugen von präzisionspolierten nicht ebenen aspherischen Oberflächen |