JP2000068265A - 酸化絶縁膜のアニ−ル方法 - Google Patents

酸化絶縁膜のアニ−ル方法

Info

Publication number
JP2000068265A
JP2000068265A JP10255956A JP25595698A JP2000068265A JP 2000068265 A JP2000068265 A JP 2000068265A JP 10255956 A JP10255956 A JP 10255956A JP 25595698 A JP25595698 A JP 25595698A JP 2000068265 A JP2000068265 A JP 2000068265A
Authority
JP
Japan
Prior art keywords
annealing
insulating film
ozone
film
room
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10255956A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000068265A5 (https=
Inventor
Koji Hosoya
細谷　　浩二
Hiroaki Mibu
博昭 壬生
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Storage Battery Co Ltd
Original Assignee
Japan Storage Battery Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Storage Battery Co Ltd filed Critical Japan Storage Battery Co Ltd
Priority to JP10255956A priority Critical patent/JP2000068265A/ja
Publication of JP2000068265A publication Critical patent/JP2000068265A/ja
Publication of JP2000068265A5 publication Critical patent/JP2000068265A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
JP10255956A 1998-08-25 1998-08-25 酸化絶縁膜のアニ−ル方法 Pending JP2000068265A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10255956A JP2000068265A (ja) 1998-08-25 1998-08-25 酸化絶縁膜のアニ−ル方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10255956A JP2000068265A (ja) 1998-08-25 1998-08-25 酸化絶縁膜のアニ−ル方法

Publications (2)

Publication Number Publication Date
JP2000068265A true JP2000068265A (ja) 2000-03-03
JP2000068265A5 JP2000068265A5 (https=) 2005-11-04

Family

ID=17285925

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10255956A Pending JP2000068265A (ja) 1998-08-25 1998-08-25 酸化絶縁膜のアニ−ル方法

Country Status (1)

Country Link
JP (1) JP2000068265A (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6649218B2 (en) 2000-05-22 2003-11-18 Tokyo Electron Limited Single substrate processing film forming method
JP2004153258A (ja) * 2002-10-29 2004-05-27 Hewlett-Packard Development Co Lp トンネル接合素子のトンネル障壁層を処理する方法
JP2006319077A (ja) * 2005-05-12 2006-11-24 Elpida Memory Inc 金属酸化物誘電体膜の形成方法及び半導体記憶装置の製造方法
JP2010212391A (ja) * 2009-03-10 2010-09-24 Hitachi Kokusai Electric Inc 半導体装置の製造方法及び基板処理装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6649218B2 (en) 2000-05-22 2003-11-18 Tokyo Electron Limited Single substrate processing film forming method
JP2004153258A (ja) * 2002-10-29 2004-05-27 Hewlett-Packard Development Co Lp トンネル接合素子のトンネル障壁層を処理する方法
JP2006319077A (ja) * 2005-05-12 2006-11-24 Elpida Memory Inc 金属酸化物誘電体膜の形成方法及び半導体記憶装置の製造方法
JP2010212391A (ja) * 2009-03-10 2010-09-24 Hitachi Kokusai Electric Inc 半導体装置の製造方法及び基板処理装置

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